GS8050CU-E6 [VISHAY]

TRANSISTOR 800 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-226AA, PLASTIC, TO-92, 3 PIN, BIP General Purpose Small Signal;
GS8050CU-E6
型号: GS8050CU-E6
厂家: VISHAY    VISHAY
描述:

TRANSISTOR 800 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-226AA, PLASTIC, TO-92, 3 PIN, BIP General Purpose Small Signal

文件: 总3页 (文件大小:27K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
GS8050xU  
New Product  
Vishay Semiconductors  
formerly General Semiconductor  
Small Signal Transistors (NPN)  
TO-226AA (TO-92)  
0.142 (3.6)  
0.181 (4.6)  
Features  
NPN Silicon Epitaxial Planar Transistors for amplifier  
applications. Especially suitable for low power output  
stages such as portable radios in class-B push-pull  
operation.  
• Complementary to GS8550xU  
• The “x” in the part number can be B, C or D, depending  
on the current gain.  
Mechanical Data  
Case: TO-92 Plastic Package  
Weight: approx. 0.18g  
max.  
0.022 (0.55)  
Packaging Codes/Options:  
E6/Bulk - 5K per container, 20K per box  
E7/4K per Ammo mag., 20K per box  
0.098 (2.5)  
Bottom  
View  
Dimensions in inches and (millimeters)  
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified  
Parameter  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Value  
Unit  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
40  
V
25  
V
6
V
Collector Current  
800  
mA  
mW  
°C/W  
°C  
Power Dissipation at Tamb = 25°C  
Thermal Resistance Junction to Ambient Air  
Junction Temperature  
Ptot  
625(1)  
200(1)  
150  
RθJA  
Tj  
Storage Temperature Range  
TS  
55 to +150  
°C  
Notes:  
(1) Valid provided that leads are kept at ambient temperature at a distance of 2mm from case  
Document Number 88193  
09-May-02  
www.vishay.com  
1
GS8050xU  
Vishay Semiconductors  
formerly General Semiconductor  
Electrical Characteristics(TJ = 25°C unless otherwise noted)  
Parameter  
Symbol  
Test Condition  
VCE = 1V, IC = 5mA  
VCE = 1V, IC = 100mA  
Min  
Typ  
Max  
Unit  
45  
135  
Current Gain Group B  
85  
120  
160  
160  
200  
300  
DC Current Gain  
C
D
hFE  
VCE = 1V, IC = 800mA  
IC = 2mA, IB = 0  
25  
40  
6
50  
Collector-Emitter Breakdown Voltage  
Collector-Base Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cut-off Current  
V(BR)CEO  
V(BR)CBO  
V(BR)EBO  
ICBO  
V
V
IC = 100µA, IE = 0  
IE = 100µA, IC = 0  
V
VCB = 35V, IE = 0  
100  
100  
nA  
nA  
V
Emitter Cut-off Current  
IEBO  
VEB = 6V, IC = 0  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
Base-Emitter ON Voltage  
VCE(sat)  
VBE(sat)  
VBE(on)  
COB  
IC = 800mA, IB = 80mA  
IC = 800mA, IB = 80mA  
VCE = 1V, IC = 10mA  
VCB = 10V, IE = 0, ƒ = 1MHz  
VCE = 10V, IC = 50mA  
0.51  
1.2  
0.66  
9
V
1.0  
V
Output Capacitance  
pF  
MHz  
Gain-Bandwidth Product  
ƒT  
100  
www.vishay.com  
2
Document Number 88193  
09-May-02  
Legal Disclaimer Notice  
Vishay  
Disclaimer  
All product specifications and data are subject to change without notice.  
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf  
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein  
or in any other disclosure relating to any product.  
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any  
information provided herein to the maximum extent permitted by law. The product specifications do not expand or  
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed  
therein, which apply to these products.  
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this  
document or by any conduct of Vishay.  
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless  
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such  
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting  
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding  
products designed for such applications.  
Product names and markings noted herein may be trademarks of their respective owners.  
Document Number: 91000  
Revision: 18-Jul-08  
www.vishay.com  
1

相关型号:

GS8050CU-E7

TRANSISTOR 800 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-226AA, PLASTIC, TO-92, 3 PIN, BIP General Purpose Small Signal
VISHAY

GS8050CU/E6

TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 800MA I(C) | TO-92
ETC

GS8050CU/E7

TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 800MA I(C) | TO-92
ETC

GS8050DU

TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 800MA I(C) | TO-92
ETC

GS8050DU-E6

TRANSISTOR 800 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-226AA, PLASTIC, TO-92, 3 PIN, BIP General Purpose Small Signal
VISHAY

GS8050DU/E6

TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 800MA I(C) | TO-92
ETC

GS8050DU/E7

TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 800MA I(C) | TO-92
ETC

GS8050M-B

Small Signal Bipolar Transistor,
GOOD-ARK

GS8050M-C

Small Signal Bipolar Transistor,
GOOD-ARK

GS8050M-D

Small Signal Bipolar Transistor,
GOOD-ARK

GS8050T-E7

TRANSISTOR 800 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-226AA, PLASTIC, TO-92, 3 PIN, BIP General Purpose Small Signal
VISHAY

GS8050T/E6

Small Signal Bipolar Transistor, 0.8A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-226AA, PLASTIC, TO-92, 3 PIN
VISHAY