GS8050CU-E6 [VISHAY]
TRANSISTOR 800 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-226AA, PLASTIC, TO-92, 3 PIN, BIP General Purpose Small Signal;![GS8050CU-E6](http://pdffile.icpdf.com/pdf2/p00292/img/icpdf/GS8050BU-E6_1771726_icpdf.jpg)
型号: | GS8050CU-E6 |
厂家: | ![]() |
描述: | TRANSISTOR 800 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-226AA, PLASTIC, TO-92, 3 PIN, BIP General Purpose Small Signal |
文件: | 总3页 (文件大小:27K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
![](http://public.icpdf.com/style/img/ads.jpg)
GS8050xU
New Product
Vishay Semiconductors
formerly General Semiconductor
Small Signal Transistors (NPN)
TO-226AA (TO-92)
0.142 (3.6)
0.181 (4.6)
Features
• NPN Silicon Epitaxial Planar Transistors for amplifier
applications. Especially suitable for low power output
stages such as portable radios in class-B push-pull
operation.
• Complementary to GS8550xU
• The “x” in the part number can be B, C or D, depending
on the current gain.
Mechanical Data
Case: TO-92 Plastic Package
Weight: approx. 0.18g
max.
0.022 (0.55)
Packaging Codes/Options:
E6/Bulk - 5K per container, 20K per box
E7/4K per Ammo mag., 20K per box
0.098 (2.5)
Bottom
View
Dimensions in inches and (millimeters)
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified
Parameter
Symbol
VCBO
VCEO
VEBO
IC
Value
Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
40
V
25
V
6
V
Collector Current
800
mA
mW
°C/W
°C
Power Dissipation at Tamb = 25°C
Thermal Resistance Junction to Ambient Air
Junction Temperature
Ptot
625(1)
200(1)
150
RθJA
Tj
Storage Temperature Range
TS
–55 to +150
°C
Notes:
(1) Valid provided that leads are kept at ambient temperature at a distance of 2mm from case
Document Number 88193
09-May-02
www.vishay.com
1
GS8050xU
Vishay Semiconductors
formerly General Semiconductor
Electrical Characteristics(TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
VCE = 1V, IC = 5mA
VCE = 1V, IC = 100mA
Min
Typ
Max
Unit
45
135
—
Current Gain Group B
85
120
160
—
—
—
160
200
300
DC Current Gain
C
D
hFE
—
VCE = 1V, IC = 800mA
IC = 2mA, IB = 0
—
25
40
6
50
—
—
—
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
V
V
IC = 100µA, IE = 0
—
—
IE = 100µA, IC = 0
—
—
V
VCB = 35V, IE = 0
—
—
—
—
—
—
—
—
100
100
—
nA
nA
V
Emitter Cut-off Current
IEBO
VEB = 6V, IC = 0
—
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter ON Voltage
VCE(sat)
VBE(sat)
VBE(on)
COB
IC = 800mA, IB = 80mA
IC = 800mA, IB = 80mA
VCE = 1V, IC = 10mA
VCB = 10V, IE = 0, ƒ = 1MHz
VCE = 10V, IC = 50mA
0.51
1.2
0.66
9
—
V
1.0
—
V
Output Capacitance
pF
MHz
Gain-Bandwidth Product
ƒT
100
—
www.vishay.com
2
Document Number 88193
09-May-02
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
1
相关型号:
![](http://pdffile.icpdf.com/pdf2/p00292/img/page/GS8050BU-E6_1771726_files/GS8050BU-E6_1771726_1.jpg)
![](http://pdffile.icpdf.com/pdf2/p00292/img/page/GS8050BU-E6_1771726_files/GS8050BU-E6_1771726_2.jpg)
GS8050CU-E7
TRANSISTOR 800 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-226AA, PLASTIC, TO-92, 3 PIN, BIP General Purpose Small Signal
VISHAY
![](http://pdffile.icpdf.com/pdf2/p00292/img/page/GS8050BU-E6_1771726_files/GS8050BU-E6_1771726_1.jpg)
![](http://pdffile.icpdf.com/pdf2/p00292/img/page/GS8050BU-E6_1771726_files/GS8050BU-E6_1771726_2.jpg)
GS8050DU-E6
TRANSISTOR 800 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-226AA, PLASTIC, TO-92, 3 PIN, BIP General Purpose Small Signal
VISHAY
![](http://pdffile.icpdf.com/pdf2/p00297/img/page/GS8050TD-E6_1794874_files/GS8050TD-E6_1794874_1.jpg)
![](http://pdffile.icpdf.com/pdf2/p00297/img/page/GS8050TD-E6_1794874_files/GS8050TD-E6_1794874_2.jpg)
GS8050T-E7
TRANSISTOR 800 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-226AA, PLASTIC, TO-92, 3 PIN, BIP General Purpose Small Signal
VISHAY
![](http://pdffile.icpdf.com/pdf2/p00219/img/page/GS8050TC-E6_1260456_files/GS8050TC-E6_1260456_1.jpg)
![](http://pdffile.icpdf.com/pdf2/p00219/img/page/GS8050TC-E6_1260456_files/GS8050TC-E6_1260456_2.jpg)
GS8050T/E6
Small Signal Bipolar Transistor, 0.8A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-226AA, PLASTIC, TO-92, 3 PIN
VISHAY
©2020 ICPDF网 联系我们和版权申明