GSIB2080-E3/45 [VISHAY]

RECTFR BRIDGE SGL 800V 3.5A 4PIN CASE GSIB-5S - Rail/Tube;


型号：	GSIB2080-E3/45
厂家：	VISHAY
描述：	RECTFR BRIDGE SGL 800V 3.5A 4PIN CASE GSIB-5S - Rail/Tube 局域网二极管
文件：	总4页 (文件大小：88K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

GSIB2020, GSIB2040, GSIB2060, GSIB2080

www.vishay.com

Vishay General Semiconductor

Single-Phase Single In-Line Bridge Rectifiers

FEATURES

• UL recognition file number E54214

• Thin single in-line package

• Glass passivated chip junction

• High surge current capability

• High case dielectric strength of 2500 V_RMS

• Solder dip 275 °C max. 10 s, per JESD 22-B106

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

Case Style GSIB-5S

TYPICAL APPLICATIONS

General purpose use in AC/DC bridge full wave rectification

for switching power supply, home appliances, office

equipment, industrial automation applications.

PRIMARY CHARACTERISTICS

Package

GSIB-5S

20 A

MECHANICAL DATA

I_F(AV)

Case: GSIB-5S

Molding compound meets UL 94 V-0 flammability rating

Base P/N-E3 - RoHS-compliant, commercial grade

V_RRM

I_FSM

200 V, 400 V, 600 V, 800 V

240 A

10 μA

1.0 V

I_R

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

E3 suffix meets JESD 201 class 1A whisker test

V_Fat I_F= 10 V

T_Jmax.

150 °C

In-Line

Polarity: As marked on body

Diode variations

Mounting Torque: 10 cm-kg (8.8 inches-lbs) max.

Recommended Torque: 5.7 cm-kg (5 inches-lbs)

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL GSIB2020

GSIB2040

400

GSIB2060

600

GSIB2080

800

UNIT

Maximum repetitive peak reverse voltage

Maximum RMS voltage

V_RRM

V_RMS

V_DC

200

140

200

280

420

560

Maximum DC blocking voltage

400

600

800

T_C= 87 °C ⁽¹⁾

T_A= 25 °C ⁽²⁾

Maximum average forward rectified

output current at

I_F(AV)

3.5

Peak forward surge current single sine-wave

superimposed on rated load

I_FSM

240

Rating for fusing (t < 8.3 ms)

I²t

A²s

°C

Operating junction and storage temperature range

T_J, T_STG

-55 to +150

Notes

(1)

Unit case mounted on aluminum plate heatsink

Units mounted on PCB without heatsink

(2)

ELECTRICAL CHARACTERISTICS (T_A= 25 °C unless otherwise noted)

PARAMETER

TEST CONDITIONS SYMBOL

GSIB2020

GSIB2040

GSIB2060

GSIB2080

UNIT

Maximum instantaneous forward

voltage drop per diode

10 A

V_F

I_R

1.00

T_A= 25 °C

Maximum DC reverse current at

rated DC blocking voltage per diode

μA

T_A= 125 °C

250

Revision: 13-Jun-14

Document Number: 88645

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

GSIB2020, GSIB2040, GSIB2060, GSIB2080

www.vishay.com

Vishay General Semiconductor

THERMAL CHARACTERISTICS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

GSIB2020

GSIB2040

GSIB2060

GSIB2080

UNIT

(2)

R_JA

Typical thermal resistance

°C/W

(1)

R_JC

1.5

Notes

(1)

(2)

(3)

Unit case mounted on aluminum plate heatsink

Units mounted on PCB without heatsink

Recommended mounting position is to bolt down on heatsink with silicone thermal compound for maximum heat transfer with #6 screw

ORDERING INFORMATION (Example)

PREFERRED P/N

UNIT WEIGHT (g)

PREFERRED PACKAGE CODE

BASE QUANTITY

DELIVERY MODE

GSIB2060-E3/45

7.0

Tube

RATINGS AND CHARACTERISTICS CURVES (T_A= 25 °C unless otherwise noted)

100

Heatsink Mounting, T_C

0.1

0.01

P.C.B. Mounting, T_A

100

125

150

0.6

0.8

1.0

1.2

1.4

Temperature (°C)

Instantaneous Forward Voltage (V)

Fig. 1 - Derating Curve Output Rectified Current

Fig. 3 - Typical Forward Characteristics Per Diode

400

350

300

200

150

100

1000

T_A= 125 °C

100

1.0 Cycle

T_A= 25 °C

0.1

100

Number of Cycles at 60 Hz

Percent of Rated Peak Reverse Voltage (%)

Fig. 2 - Maximum Non-Repetitive Peak Forward Surge

Fig. 4 - Typical Reverse Characteristics Per Diode

Current Per Diode

Revision: 13-Jun-14

Document Number: 88645

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

GSIB2020, GSIB2040, GSIB2060, GSIB2080

www.vishay.com

Vishay General Semiconductor

1000

100

0.1

100

0.01

0.1

Reverse Voltage (V)

t - Heating Time (s)

Fig. 5 - Typical Junction Capacitance Per Diode

Fig. 6 - Typical Transient Thermal Impedance



PACKAGE OUTLINE DIMENSIONS in millimeters

Case Style GSIB-5S

4.6 0.2

3.6 0.2

30 0.3

2.5 0.2

2.7 0.2

2.2 0.2

0.1

0.7 0.1

7.5

0.2

7.5

0.2

10 0.2

Revision: 13-Jun-14

Document Number: 88645

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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www.vishay.com

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

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Revision: 08-Feb-17

Document Number: 91000

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