GSIB2080N-M3/45 [VISHAY]

DIODE BRIDGE RECTIFIER DIODE, Bridge Rectifier Diode;


型号：	GSIB2080N-M3/45
厂家：	VISHAY
描述：	DIODE BRIDGE RECTIFIER DIODE, Bridge Rectifier Diode 局域网二极管
文件：	总4页 (文件大小：86K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

GSIB2020N, GSIB2040N, GSIB2060N, GSIB2080N

www.vishay.com

Vishay General Semiconductor

Single-Phase Single In-Line Bridge Rectifiers

FEATURES

• UL recognition file number E54214

• Thin single in-Iine package

• Glass passivated chip junction

• High surge current capability

• High case dielectric strength of 2500 V_RMS

• Solder dip 275 °C max. 10 s, per JESD 22-B106

• Material categorization: For definitions of compliance

please see www.vishay.com/doc?99912

Case Style GSIB-5S

TYPICAL APPLICATIONS

General purpose use in AC/DC bridge full wave rectification

for switching power supply, home appliances, office

equipment, industrial automation applications.

PRIMARY CHARACTERISTICS

MECHANICAL DATA

Case: GSIB-5S

Package

GSIB-5S

20 A

I_F(AV)

Molding compound meets UL 94 V-0 flammability rating

V_RRM

I_FSM

200 V, 400 V, 600 V, 800 V

Base P/N-M3

- halogen-free, RoHS-compliant, and

240 A

10 μA

1.0 V

commercial grade

I_R

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

M3 suffix meets JESD 201 class 1A whisker test

V_Fat I_F= 7.5 A

T_Jmax.

150 °C

In-Line

Diode variations

Polarity: As marked on body

Mounting Torque: 10 cm-kg (8.8 in-lbs) maximum

Recommended Torque: 5.7 cm-kg (5 in-lbs)

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL GSIB2020N GSIB2040N GSIB2060N GSIB2080N

UNIT

Maximum repetitive peak reverse voltage

Maximum RMS voltage

V_RRM

V_RMS

V_DC

200

140

200

400

280

400

600

420

600

800

560

800

Maximum DC blocking voltage

(1)

_C= 87 °C

I_F(AV)

Maximum average forward rectified

output current at

(2)

T_A= 25 °C

I_F(AV)

3.5

Peak forward surge current single sine-wave

I_FSM

240

superimposed on rated load

Rating for fusing (t < 8.3 ms)

I²t

A²s

°C

Operating junction and storage temperature range

T_J, T_STG

- 55 to + 150

Notes

(1)

Unit case mounted on aluminum plate heatsink

Units mounted on PCB without heatsink

(2)

Revision: 26-Jun-13

Document Number: 89388

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

GSIB2020N, GSIB2040N, GSIB2060N, GSIB2080N

www.vishay.com

Vishay General Semiconductor

ELECTRICAL CHARACTERISTICS (T_A= 25 °C unless otherwise noted)

PARAMETER

TEST CONDITIONS SYMBOL GSIB2020N GSIB2040N GSIB2060N GSIB2080N

UNIT

Maximum instantaneous

I_F= 7.5 A

V_F

I_R

1.0

forward voltage drop per diode

_A= 25 °C

Maximum DC reverse current at

rated DC blocking voltage per diode

μA

T_A= 125 °C

250

THERMAL CHARACTERISTICS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL GSIB2020N GSIB2040N GSIB2060N GSIB2080N

UNIT

(2)

R_JA

R_JC

Maximum thermal resistance

°C/W

(1)

1.5

Notes

(1)

(2)

(3)

Unit case mounted on aluminum plate heatsink

Units mounted on PCB without heatsink

Recommended mounting position is to bolt down on heatsink with silicone thermal compound for maximum heat transfer with #6 screw

ORDERING INFORMATION (Example)

PREFERRED P/N

UNIT WEIGHT (g)

PREFERRED PACKAGE CODE

BASE QUANTITY

DELIVERY MODE

GSIB2060N-M3/45

7.0

Tube

RATINGS AND CHARACTERISTICS CURVES (T_A= 25 °C unless otherwise noted)

400

350

300

200

150

100

Heatsink Mounting, T_C

PCB Mounting, T_A

1.0 Cycle

100

125

150

Number of Cycles at 60 Hz

100

Temperature (°C)

Fig. 1 - Derating Curve Output Rectified Current

Fig. 2 - Maximum Non-Repetitive Peak Forward Surge

Current Per Diode

Revision: 26-Jun-13

Document Number: 89388

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

GSIB2020N, GSIB2040N, GSIB2060N, GSIB2080N

www.vishay.com

Vishay General Semiconductor

100

1000

100

0.1

0.01

100

0.6

0.8

1.0

1.2

1.4

Reverse Voltage (V)

Instantaneous Forward Voltage (V)

Fig. 3 - Typical Forward Characteristics Per Diode

Fig. 5 - Typical Junction Capacitance Per Diode

1000

T_A= 125 °C

100

T_A= 25 °C

0.1

0.01

0.1

100

t - Heating Time (s)

Percent of Rated Peak Reverse Voltage (%)

Fig. 4 - Typical Reverse Characteristics Per Diode

Fig. 6 - Typical Transient Thermal Impedance

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)

Case Style GSIB-5S

4.6 0.2

3.6 0.2

30 0.3

2.5 0.2

2.7 0.2

2.2 0.2

0.1

0.7 0.1

7.5

0.2

7.5

0.2

10 0.2

Revision: 26-Jun-13

Document Number: 89388

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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

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Revision: 08-Feb-17

Document Number: 91000

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