GSIB660-E3 [VISHAY]
DIODE 2.8 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE, LEAD FREE, PLASTIC, CASE GSIB-5S, 4 PIN, Bridge Rectifier Diode;
| 型号： | GSIB660-E3 |
| 厂家： | 
VISHAY |
| 描述： | DIODE 2.8 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE, LEAD FREE, PLASTIC, CASE GSIB-5S, 4 PIN, Bridge Rectifier Diode 局域网 二极管 |
| 文件： | 总4页 (文件大小：201K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
GSIB620 thru GSIB680
Vishay General Semiconductor
Single-Phase Single In-Line Bridge Rectifiers
Major Ratings and Characteristics
Case Style GSIB-5S
IF(AV)
VRRM
IFSM
IR
6 A
200 V to 800 V
180 A
10 µA
VF
0.95 V
Tj max.
150 °C
~
~
~
~
Features
Mechanical Data
• UL Recognition file number E54214
Case: GSIB-5S
• Thin Single In-Line package
Epoxy meets UL-94V-0 Flammability rating
• Glass passivated chip junction
• High surge current capability
Terminals: Matte tin plated (E3 Suffix) leads, solder-
able per J-STD-002B and JESD22-B102D
Polarity: As marked on body
Mounting Torque: 10 cm-kg (8.8 inches-lbs) max.
Recommended Torque: 5.7cm-kg (5 inches-lbs)
• High case dielectric strength of 1500 V
• Solder Dip 260 °C, 40 seconds
RMS
Typical Applications
General purpose use in ac-to-dc bridge full wave rec-
tification for Switching Power Supply, Home Appli-
ances, Office Equipment, Industrial Automation
applications
Maximum Ratings
Ratings at 25 °C ambient temperature unless otherwise specified.
Parameter
Symbol
VRRM
GSIB620
200
GSIB640
400
GSIB660
600
GSIB680
800
Unit
V
Maximum repetitive peak reverse voltage
Maximum RMS voltage
VRMS
VDC
140
200
280
400
420
600
560
800
V
V
A
Maximum DC blocking voltage
6.0(1)
2.8(2)
180
Maximum average forward rectified
output current at
T
C = 100 °C
IF(AV)
TA = 25 °C
Peak forward surge current single sine-wave
IFSM
A
superimposed on rated load (JEDEC Method)
I2t
A2sec
°C
Rating for fusing (t < 8.3 ms)
120
Operating junction and storage temperature range
TJ, TSTG
- 55 to + 150
Electrical Characteristics
Ratings at 25 °C ambient temperature unless otherwise specified.
Parameter
Test condition
at 3.0 A
Symbol
VF
GSIB620
GSIB640
GSIB660
GSIB680
Unit
V
Maximum instantaneous forward
voltage drop per leg
0.95
Maximum DC reverse current at
rated DC blocking voltage per leg
TA = 25 °C
IR
10
250
µA
TA = 125 °C
Document Number 88648
20-Jul-05
www.vishay.com
1
GSIB620 thru GSIB680
Vishay General Semiconductor
Thermal Characteristics
Ratings at 25 °C ambient temperature unless otherwise specified.
Parameter
Symbol
RθJA
GSIB620
GSIB640
GSIB660
GSIB680
Unit
22(2)
Typical thermal resistance per leg
°C/W
3.4(1)
RθJC
Notes:
(1) Unit case mounted on Al plate heatsink
(2) Units mounted on P.C.B. with 0.5 x 0.5" (12 x 12 mm) copper pads and 0.375" (9.5 mm) lead length
(3) Recommended mounting position is to bolt down on heatsink with silicone thermal compound for maximum heat transfer with #6 screw
Ratings and Characteristics Curves
(TA = 25 °C unless otherwise noted)
100
10
10.0
8.0
Heatsink Mounting, T
C
Tj = 150 °C
6.0
Tj = 25 °C
1
P.C.B. Mounting, T
A
4.0
2.0
0
Tj = 125 °C
0.1
0.01
0.3
0.5
0.7
0.9
1.1
0
50
100
150
Instantaneous Forward Voltage (V)
Temperature ( °C)
Figure 1. Derating Curve Output Rectified Current
Figure 3. Typical Forward Characteristics Per Leg
1000.0
210
Tj = 150 °C
T
= T max.
J
J
125C
single sine-wave
180
150
100.0
Tj = 125 °C
10.0
120
90
1.0
60
30
0
0.1
Tj = 25 °C
1.0 Cycle
0.0
20
40
60
80
100
1
10
Number of Cycles at 60 Hz
100
Percent of Rated Peak Reverse Voltage (%)
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
Per Leg
Figure 4. Typical Reverse Characteristics Per Leg
www.vishay.com
2
Document Number 88648
20-Jul-05
GSIB620 thru GSIB680
Vishay General Semiconductor
100
10
1
1,000
100
10
1
0.1
100
0.1
t, Heating Time (sec.)
0.01
1
10
0.1
1
10
100
Reverse Voltage (V)
Figure 5. Typical Junction Capacitance Per Leg
Figure 6. Typical Transient Thermal Impedance
Package outline dimensions in millimeters
Case Style GSIB-5S
4.6 0.2
3.6 0.2
30 0.3
+
2.5 0.2
2.2 0.2
1
0.1
0.7 0.1
7.5
0.2
7.5
0.2
2.7 0.2
10 0.2
Document Number 88648
20-Jul-05
www.vishay.com
3
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
www.vishay.com
1
相关型号：
GSIB660-E3/51
DIODE 2.8 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE, PLASTIC, CASE GSIB-5S, 4 PIN, Bridge Rectifier Diode
VISHAY
GSIB660-E3/72
DIODE 2.8 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE, PLASTIC, CASE GSIB-5S, 4 PIN, Bridge Rectifier Diode
VISHAY
GSIB660/51
Bridge Rectifier Diode, 1 Phase, 2.8A, 600V V(RRM), Silicon, PLASTIC, CASE GSIB-5S, 4 PIN
VISHAY
GSIB660/72
Bridge Rectifier Diode, 1 Phase, 2.8A, 600V V(RRM), Silicon, PLASTIC, CASE GSIB-5S, 4 PIN
VISHAY
GSIB660/72-E3
DIODE 2.8 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE, PLASTIC, CASE GSIB-5S, 4 PIN, Bridge Rectifier Diode
VISHAY
GSIB660E3
DIODE 2.8 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE, LEAD FREE, PLASTIC, CASE GSIB-5S, 4 PIN, Bridge Rectifier Diode
VISHAY
GSIB680-E3
DIODE 2.8 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE, LEAD FREE, PLASTIC, CASE GSIB-5S, 4 PIN, Bridge Rectifier Diode
VISHAY
©2020 ICPDF网 联系我们和版权申明