概述
数据手册GSOT03C_10 概述
Two-Line ESD-Protection in SOT-23 两线ESD保护的SOT- 23
GSOT03C_10 数据手册
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PDF下载GSOT03C to GSOT36C
Vishay Semiconductors
Two-Line ESD-Protection in SOT-23
FEATURES
• Two-line ESD-protection device
1
2
• ESD-protection acc. IEC 61000-4-2
ꢀ0 kV contact discharge
ꢀ0 kV air discharge
3
• Space saving SOT-2ꢀ package
• AEC-Q101 qualified
• eꢀ - Sn
20456
20512
1
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
MARKING (example only)
YYY
20357
YYY = type code (see table below)
XX = date code
ORDERING INFORMATION
ENVIRONMENTAL
STATUS
TAPED UNITS PER REEL
(8 mm TAPE ON 7" REEL)
MINIMUM ORDER
QUANTITY
DEVICE NAME
GSOT0ꢀC
GSOT04C
GSOT05C
GSOT08C
GSOT12C
GSOT15C
GSOT24C
GSOTꢀ6C
ORDERING CODE
Standard
Green
GSOT0ꢀC-GS08
GSOT0ꢀC-V-G-08
GSOT04C-GS08
GSOT04C-V-G-08
GSOT05C-GS08
GSOT05C-V-G-08
GSOT08C-GS08
GSOT08C-V-G-08
GSOT12C-GS08
GSOT12C-V-G-08
GSOT15C-GS08
GSOT15C-V-G-08
GSOT24C-GS08
GSOT24C-V-G-08
GSOTꢀ6C-GS08
GSOTꢀ6C-V-G-08
ꢀ000
ꢀ000
ꢀ000
ꢀ000
ꢀ000
ꢀ000
ꢀ000
ꢀ000
15 000
15 000
15 000
15 000
15 000
15 000
15 000
15 000
Standard
Green
Standard
Green
Standard
Green
Standard
Green
Standard
Green
Standard
Green
Standard
Green
** Please see document “Vishay Material Category Policy”: www.vishay.com/doc?99902
Document Number: 85824
Rev. 2.0, 22-Jul-10
For technical questions, contact: ESDprotection@vishay.com
www.vishay.com
1
GSOT03C to GSOT36C
Two-Line ESD-Protection in SOT-2ꢀ
Vishay Semiconductors
PACKAGE DATA
MOLDING
DEVICE
NAME
PACKAGE
NAME
TYPE
CODE
ENVIRONMENTAL
STATUS
COMPOUND
FLAMMABILITY SENSITIVITY LEVEL
RATING
MOISTURE
SOLDERING
CONDITIONS
WEIGHT
0ꢀC
C1G
04C
C8G
05C
C2C
08C
CꢀG
12C
C4G
15C
C5G
24C
C6G
ꢀ6C
C7G
Standard
Green
8.8 mg
8.1 mg
8.8 mg
8.1 mg
8.8 mg
8.1 mg
8.8 mg
8.1 mg
8.8 mg
8.1 mg
8.8 mg
8.1 mg
8.8 mg
8.1 mg
8.8 mg
8.1 mg
MSL level 1
UL 94 V-0
GSOT0ꢀC
GSOT04C
GSOT05C
GSOT08C
GSOT12C
GSOT15C
GSOT24C
GSOTꢀ6C
SOT-2ꢀ
SOT-2ꢀ
SOT-2ꢀ
SOT-2ꢀ
SOT-2ꢀ
SOT-2ꢀ
SOT-2ꢀ
SOT-2ꢀ
260 °C/10 s at terminals
260 °C/10 s at terminals
260 °C/10 s at terminals
260 °C/10 s at terminals
260 °C/10 s at terminals
260 °C/10 s at terminals
260 °C/10 s at terminals
260 °C/10 s at terminals
(according J-STD-020)
Standard
Green
MSL level 1
UL 94 V-0
(according J-STD-020)
Standard
Green
MSL level 1
UL 94 V-0
(according J-STD-020)
Standard
Green
MSL level 1
UL 94 V-0
(according J-STD-020)
Standard
Green
MSL level 1
UL 94 V-0
(according J-STD-020)
Standard
Green
MSL level 1
UL 94 V-0
(according J-STD-020)
Standard
Green
MSL level 1
UL 94 V-0
(according J-STD-020)
Standard
Green
MSL level 1
UL 94 V-0
(according J-STD-020)
ABSOLUTE MAXIMUM RATINGS GSOT03C
PARAMETER
TEST CONDITIONS
SYMBOL
VALUE
UNIT
Pin 1 to ꢀ or pin 2 to ꢀ
acc. IEC 61000-4-5, tp = 8/20 μs; single shot
ꢀ0
ꢀ0
A
Peak pulse current
IPPM
Pin 1 to 2 or pin 2 to 1; pin ꢀ not connected
acc. IEC 61000-4-5, tp = 8/20 μs; single shot
A
Pin 1 to ꢀ or pin 2 to ꢀ
acc. IEC 61000-4-5, tp = 8/20 μs; single shot
ꢀ69
504
W
W
Peak pulse power
ESD immunity
PPP
Pin 1 to 2 or pin 2 to 1; pin ꢀ not connected
acc. IEC 61000-4-5, tp = 8/20 μs; single shot
Contact discharge acc. IEC 61000-4-2; 10 pulses
Air discharge acc. IEC 61000-4-2; 10 pulses
Junction temperature
ꢀ0
ꢀ0
kV
kV
°C
°C
VESD
Operating temperature
Storage temperature
TJ
- 40 to + 125
- 55 to + 150
TSTG
ABSOLUTE MAXIMUM RATINGS GSOT04C
PARAMETER
TEST CONDITIONS
SYMBOL
VALUE
UNIT
Pin 1 to ꢀ or pin 2 to ꢀ
acc. IEC 61000-4-5, tp = 8/20 μs; single shot
ꢀ0
A
Peak pulse current
IPPM
Pin 1 to 2 or pin 2 to 1; pin ꢀ not connected
acc. IEC 61000-4-5, tp = 8/20 μs; single shot
ꢀ0
A
Pin 1 to ꢀ or pin 2 to ꢀ
acc. IEC 61000-4-5, tp = 8/20 μs; single shot
429
564
W
W
Peak pulse power
ESD immunity
PPP
Pin 1 to 2 or pin 2 to 1; pin ꢀ not connected
acc. IEC 61000-4-5, tp = 8/20 μs; single shot
Contact discharge acc. IEC 61000-4-2; 10 pulses
Air discharge acc. IEC 61000-4-2; 10 pulses
Junction temperature
ꢀ0
ꢀ0
kV
kV
°C
°C
VESD
Operating temperature
Storage temperature
TJ
- 40 to + 125
- 55 to + 150
TSTG
www.vishay.com
2
For technical questions, contact: ESDprotection@vishay.com
Document Number: 85824
Rev. 2.0, 22-Jul-10
GSOT03C to GSOT36C
Two-Line ESD-Protection in SOT-2ꢀ
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS GSOT05C
PARAMETER
TEST CONDITIONS
SYMBOL
VALUE
UNIT
Pin 1 to ꢀ or pin 2 to ꢀ
acc. IEC 61000-4-5, tp = 8/20 μs; single shot
ꢀ0
A
Peak pulse current
IPPM
Pin 1 to 2 or pin 2 to 1; pin ꢀ not connected
acc. IEC 61000-4-5, tp = 8/20 μs; single shot
ꢀ0
A
Pin 1 to ꢀ or pin 2 to ꢀ
acc. IEC 61000-4-5, tp = 8/20 μs; single shot
480
612
W
W
Peak pulse power
ESD immunity
PPP
Pin 1 to 2 or pin 2 to 1; pin ꢀ not connected
acc. IEC 61000-4-5, tp = 8/20 μs; single shot
Contact discharge acc. IEC 61000-4-2; 10 pulses
Air discharge acc. IEC 61000-4-2; 10 pulses
Junction temperature
ꢀ0
ꢀ0
kV
kV
°C
°C
VESD
Operating temperature
Storage temperature
TJ
- 40 to + 125
- 55 to + 150
TSTG
ABSOLUTE MAXIMUM RATINGS GSOT08C
PARAMETER
TEST CONDITIONS
SYMBOL
VALUE
UNIT
Pin 1 to ꢀ or pin 2 to ꢀ
acc. IEC 61000-4-5, tp = 8/20 μs; single shot
18
A
Peak pulse current
IPPM
Pin 1 to 2 or pin 2 to 1; pin ꢀ not connected
acc. IEC 61000-4-5, tp = 8/20 μs; single shot
18
A
Pin 1 to ꢀ or pin 2 to ꢀ
acc. IEC 61000-4-5, tp = 8/20 μs; single shot
ꢀ45
400
W
W
Peak pulse power
ESD immunity
PPP
Pin 1 to 2 or pin 2 to 1; pin ꢀ not connected
acc. IEC 61000-4-5, tp = 8/20 μs; single shot
Contact discharge acc. IEC 61000-4-2; 10 pulses
Air discharge acc. IEC 61000-4-2; 10 pulses
Junction temperature
ꢀ0
ꢀ0
kV
kV
°C
°C
VESD
Operating temperature
Storage temperature
TJ
- 40 to + 125
- 55 to + 150
TSTG
ABSOLUTE MAXIMUM RATINGS GSOT12C
PARAMETER
TEST CONDITIONS
SYMBOL
VALUE
UNIT
Pin 1 to ꢀ or pin 2 to ꢀ
acc. IEC 61000-4-5, tp = 8/20 μs; single shot
12
A
Peak pulse current
IPPM
Pin 1 to 2 or pin 2 to 1; pin ꢀ not connected
acc. IEC 61000-4-5, tp = 8/20 μs; single shot
12
A
Pin 1 to ꢀ or pin 2 to ꢀ
acc. IEC 61000-4-5, tp = 8/20 μs; single shot
ꢀ12
ꢀꢀ7
W
W
Peak pulse power
ESD immunity
PPP
Pin 1 to 2 or pin 2 to 1; pin ꢀ not connected
acc. IEC 61000-4-5, tp = 8/20 μs; single shot
Contact discharge acc. IEC 61000-4-2; 10 pulses
Air discharge acc. IEC 61000-4-2; 10 pulses
Junction temperature
ꢀ0
ꢀ0
kV
kV
°C
°C
VESD
Operating temperature
Storage temperature
TJ
- 40 to + 125
- 55 to + 150
TSTG
Document Number: 85824
Rev. 2.0, 22-Jul-10
For technical questions, contact: ESDprotection@vishay.com
www.vishay.com
ꢀ
GSOT03C to GSOT36C
Two-Line ESD-Protection in SOT-2ꢀ
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS GSOT15C
PARAMETER
TEST CONDITIONS
SYMBOL
VALUE
UNIT
Pin 1 to ꢀ or pin 2 to ꢀ
8
A
acc. IEC 61000-4-5, tp = 8/20 μs; single shot
Peak pulse current
IPPM
Pin 1 to 2 or pin 2 to 1; pin ꢀ not connected
acc. IEC 61000-4-5, tp = 8/20 μs; single shot
8
A
Pin 1 to ꢀ or pin 2 to ꢀ
ꢀ45
400
W
W
acc. IEC 61000-4-5, tp = 8/20 μs; single shot
Peak pulse power
ESD immunity
PPP
Pin 1 to 2 or pin 2 to 1; pin ꢀ not connected
acc. IEC 61000-4-5, tp = 8/20 μs; single shot
Contact discharge acc. IEC 61000-4-2; 10 pulses
Air discharge acc. IEC 61000-4-2; 10 pulses
Junction temperature
ꢀ0
ꢀ0
kV
kV
°C
°C
VESD
Operating temperature
Storage temperature
TJ
- 40 to + 125
- 55 to + 150
TSTG
ABSOLUTE MAXIMUM RATINGS GSOT24C
PARAMETER
TEST CONDITIONS
SYMBOL
VALUE
UNIT
Pin 1 to ꢀ or pin 2 to ꢀ
5
A
acc. IEC 61000-4-5, tp = 8/20 μs; single shot
Peak pulse current
IPPM
Pin 1 to 2 or pin 2 to 1; pin ꢀ not connected
acc. IEC 61000-4-5, tp = 8/20 μs; single shot
5
A
Pin 1 to ꢀ or pin 2 to ꢀ
2ꢀ5
240
W
W
acc. IEC 61000-4-5, tp = 8/20 μs; single shot
Peak pulse power
ESD immunity
PPP
Pin 1 to 2 or pin 2 to 1; pin ꢀ not connected
acc. IEC 61000-4-5, tp = 8/20 μs; single shot
Contact discharge acc. IEC 61000-4-2; 10 pulses
Air discharge acc. IEC 61000-4-2; 10 pulses
Junction temperature
ꢀ0
ꢀ0
kV
kV
°C
°C
VESD
Operating temperature
Storage temperature
TJ
- 40 to + 125
- 55 to + 150
TSTG
ABSOLUTE MAXIMUM RATINGS GSOT36C
PARAMETER
TEST CONDITIONS
SYMBOL
VALUE
UNIT
Pin 1 to ꢀ or pin 2 to ꢀ
ꢀ.5
A
acc. IEC 61000-4-5, tp = 8/20 μs; single shot
Peak pulse current
IPPM
Pin 1 to 2 or pin 2 to 1; pin ꢀ not connected
acc. IEC 61000-4-5, tp = 8/20 μs; single shot
ꢀ.5
248
252
A
Pin 1 to ꢀ or pin 2 to ꢀ
acc. IEC 61000-4-5, tp = 8/20 μs; single shot
W
W
Peak pulse power
ESD immunity
PPP
Pin 1 to 2 or pin 2 to 1; pin ꢀ not connected
acc. IEC 61000-4-5, tp = 8/20 μs; single shot
Contact discharge acc. IEC 61000-4-2; 10 pulses
Air discharge acc. IEC 61000-4-2; 10 pulses
Junction temperature
ꢀ0
ꢀ0
kV
kV
°C
°C
VESD
Operating temperature
Storage temperature
TJ
- 40 to + 125
- 55 to + 150
TSTG
BiAs-MODE (2-line bidirectional asymmetrical protection mode)
With the GSOTxx one signal- or data-lines (L1) can be protected against voltage transients. With pin 1 connected to ground
and pin ꢀ connected to a signal- or data-line which has to be protected. As long as the voltage level on the data- or signal-line
is between 0 V (ground level) and the specified maximum reverse working voltage (VRWM) the protection diode between pin 1
and pin ꢀ offer a high isolation to the ground line. The protection device behaves like an open switch.
As soon as any positive transient voltage signal exceeds the break through voltage level of the protection diode, the diode
becomes conductive and shorts the transient current to ground. Now the protection device behaves like a closed switch. The
clamping voltage (VC) is defined by the breakthrough voltage (VBR) level plus the voltage drop at the series impedance
(resistance and inductance) of the protection device.
Any negative transient signal will be clamped accordingly. The negative transient current is flowing in the forward direction of
the protection diode. The low forward voltage (VF) clamps the negative transient close to the ground level.
Due to the different clamping levels in forward and reverse direction the GSOTxx clamping behaviour is bidirectional and
asymmetrical (BiAs).
www.vishay.com
4
For technical questions, contact: ESDprotection@vishay.com
Document Number: 85824
Rev. 2.0, 22-Jul-10
GSOT03C to GSOT36C
Two-Line ESD-Protection in SOT-2ꢀ
Vishay Semiconductors
L1
L2
2
1
BiAs
ꢀ
Ground
20358
If a higher surge current or peak pulse current (IPP) is needed, both protection diodes in the GSOTxxC can also be used in
parallel in order to “double” the performance.
This offers:
• double surge power = double peak pulse current (2 x IPPM
• half of the line inductance = reduced clamping voltage
• half of the line resistance = reduced clamping voltage
• double line capacitance (2 x CD)
)
• double reverse leakage current (2 x IR)
L1
2
1
ꢀ
Ground
20ꢀ59
ELECTRICAL CHARACTERISTICS GSOT03C
PARAMETER
TEST CONDITIONS/REMARKS
SYMBOL
Nchannel
VRWM
IR
MIN.
TYP.
-
MAX.
2
UNIT
lines
V
Protection paths
Number of lines which can be protected
at IR = 100 μA
-
ꢀ.ꢀ
-
Reverse working voltage
Reverse current
-
-
at VR = ꢀ.ꢀ V
-
100
-
μA
V
Reverse breakdown voltage
at IR = 1 mA
VBR
4
-
4.6
5.7
10
1
at IPP = 1 A
7.5
12.ꢀ
1.2
-
V
Reverse clamping voltage
Forward clamping voltage
Capacitance
VC
VF
at IPP = IPPM = ꢀ0 A
at IPP = 1 A
-
V
-
V
at IPP = IPPM = ꢀ0 A
at VR = 0 V; f = 1 MHz
at VR = 1.6 V; f = 1 MHz
-
4.5
420
260
V
-
600
-
pF
pF
CD
-
Note
•
Ratings at 25 °C, ambient temperature unless otherwise specified. BiAs mode (between pin 1 to ꢀ or pin 2 to ꢀ)
ELECTRICAL CHARACTERISTICS GSOT04C
PARAMETER
TEST CONDITIONS/REMARKS
Number of lines which can be protected
at IR = 20 μA
SYMBOL
Nchannel
VRWM
IR
MIN.
TYP.
-
MAX.
UNIT
lines
V
Protection paths
-
4
-
2
-
Reverse working voltage
Reverse current
-
at VR = 4 V
-
20
-
μA
V
Reverse breakdown voltage
at IR = 1 mA
VBR
5
-
6.1
7.5
11.2
1
at IPP = 1 A
9
V
Reverse clamping voltage
Forward clamping voltage
Capacitance
VC
VF
at IPP = IPPM = ꢀ0 A
at IPP = 1 A
-
14.ꢀ
1.2
-
V
-
V
at IPP = IPPM = ꢀ0 A
at VR = 0 V; f = 1 MHz
at VR = 2 V; f = 1 MHz
-
4.5
ꢀ10
200
V
-
450
-
pF
pF
CD
-
Note
Ratings at 25 °C, ambient temperature unless otherwise specified. BiAs mode (between pin 1 to ꢀ or pin 2 to ꢀ)
•
Document Number: 85824
Rev. 2.0, 22-Jul-10
For technical questions, contact: ESDprotection@vishay.com
www.vishay.com
5
GSOT03C to GSOT36C
Two-Line ESD-Protection in SOT-2ꢀ
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS GSOT05C
PARAMETER
TEST CONDITIONS/REMARKS
SYMBOL
Nchannel
VRWM
IR
MIN.
TYP.
-
MAX.
2
UNIT
lines
V
Protection paths
Number of lines which can be protected
at IR = 10 μA
-
5
-
Reverse working voltage
Reverse current
-
-
at VR = 5 V
-
10
-
μA
V
Reverse breakdown voltage
at IR = 1 mA
VBR
6
-
6.8
7
at IPP = 1 A
8.7
16
1.2
-
V
Reverse clamping voltage
Forward clamping voltage
Capacitance
VC
VF
at IPP = IPPM = ꢀ0 A
at IPP = 1 A
-
12
1
V
-
V
at IPP = IPPM = ꢀ0 A
at VR = 0 V; f = 1 MHz
at VR = 2.5 V; f = 1 MHz
-
4.5
260
150
V
-
ꢀ50
-
pF
pF
CD
-
Note
•
Ratings at 25 °C, ambient temperature unless otherwise specified. BiAs mode (between pin 1 to ꢀ or pin 2 to ꢀ)
ELECTRICAL CHARACTERISTICS GSOT08C
PARAMETER
TEST CONDITIONS/REMARKS
Number of lines which can be protected
at IR = 5 μA
SYMBOL
Nchannel
VRWM
IR
MIN.
TYP.
-
MAX.
UNIT
lines
V
Protection paths
-
8
-
2
-
Reverse working voltage
Reverse current
-
at VR = 8 V
-
5
μA
V
Reverse breakdown voltage
at IR = 1 mA
VBR
9
-
10
10.7
15.2
1
-
at IPP = 1 A
1ꢀ
19.2
1.2
-
V
Reverse clamping voltage
Forward clamping voltage
Capacitance
VC
VF
at IPP = IPPM = 18 A
at IPP = 1 A
-
V
-
V
at IPP = IPPM = 18 A
at VR = 0 V; f = 1 MHz
at VR = 4 V; f = 1 MHz
-
ꢀ
V
-
160
80
250
-
pF
pF
CD
-
Note
•
Ratings at 25 °C, ambient temperature unless otherwise specified. BiAs mode (between pin 1 to ꢀ or pin 2 to ꢀ)
ELECTRICAL CHARACTERISTICS GSOT12C
PARAMETER
TEST CONDITIONS/REMARKS
Number of lines which can be protected
at IR = 1 μA
SYMBOL
Nchannel
VRWM
IR
MIN.
TYP.
-
MAX.
UNIT
lines
V
Protection paths
-
2
-
Reverse working voltage
Reverse current
12
-
at VR = 12 V
-
-
1
μA
V
Reverse breakdown voltage
at IR = 1 mA
VBR
1ꢀ.5
15
15.4
21.2
1
-
at IPP = 1 A
-
-
-
-
-
-
18.7
26
1.2
-
V
Reverse clamping voltage
Forward clamping voltage
Capacitance
VC
VF
at IPP = IPPM = 12 A
at IPP = 1 A
V
V
at IPP = IPPM = 12 A
at VR = 0 V; f = 1 MHz
at VR = 6 V; f = 1 MHz
2.2
115
50
V
150
-
pF
pF
CD
Note
Ratings at 25 °C, ambient temperature unless otherwise specified. BiAs mode (between pin 1 to ꢀ or pin 2 to ꢀ)
•
www.vishay.com
6
For technical questions, contact: ESDprotection@vishay.com
Document Number: 85824
Rev. 2.0, 22-Jul-10
GSOT03C to GSOT36C
Two-Line ESD-Protection in SOT-2ꢀ
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS GSOT15C
PARAMETER
TEST CONDITIONS/REMARKS
SYMBOL
Nchannel
VRWM
IR
MIN.
TYP.
-
MAX.
UNIT
lines
V
Protection paths
Number of lines which can be protected
at IR = 1 μA
-
2
-
Reverse working voltage
Reverse current
15
-
at VR = 15 V
-
-
1
μA
V
Reverse breakdown voltage
at IR = 1 mA
VBR
16.5
18
19.4
24.8
1
-
at IPP = 1 A
-
-
-
-
-
-
2ꢀ.5
28.8
1.2
-
V
Reverse clamping voltage
Forward clamping voltage
Capacitance
VC
VF
at IPP = IPPM = 8 A
at IPP = 1 A
V
V
at IPP = IPPM = 8 A
at VR = 0 V; f = 1 MHz
at VR = 7.5 V; f = 1 MHz
1.8
90
ꢀ5
V
120
-
pF
pF
CD
Note
•
Ratings at 25 °C, ambient temperature unless otherwise specified. BiAs mode (between pin 1 to ꢀ or pin 2 to ꢀ)
ELECTRICAL CHARACTERISTICS GSOT24C
PARAMETER
TEST CONDITIONS/REMARKS
Number of lines which can be protected
at IR = 1 μA
SYMBOL
Nchannel
VRWM
IR
MIN.
TYP.
-
MAX.
UNIT
lines
V
Protection paths
-
24
-
2
-
Reverse working voltage
Reverse current
-
at VR = 24 V
-
1
μA
V
Reverse breakdown voltage
at IR = 1 mA
VBR
27
-
ꢀ0
ꢀ4
41
1
-
at IPP = 1 A
41
47
1.2
-
V
Reverse clamping voltage
Forward clamping voltage
Capacitance
VC
VF
at IPP = IPPM = 5 A
at IPP = 1 A
-
V
-
V
at IPP = IPPM = 5 A
at VR = 0 V; f = 1 MHz
at VR = 12 V; f = 1 MHz
-
1.4
65
20
V
-
80
-
pF
pF
CD
-
Note
•
Ratings at 25 °C, ambient temperature unless otherwise specified. BiAs mode (between pin 1 to ꢀ or pin 2 to ꢀ)
ELECTRICAL CHARACTERISTICS GSOT36C
PARAMETER
TEST CONDITIONS/REMARKS
Number of lines which can be protected
at IR = 1 μA
SYMBOL
Nchannel
VRWM
IR
MIN.
TYP.
-
MAX.
UNIT
lines
V
Protection paths
-
ꢀ6
-
2
-
Reverse working voltage
Reverse current
-
at VR = ꢀ6 V
-
1
μA
V
Reverse breakdown voltage
at IR = 1 mA
VBR
ꢀ9
-
4ꢀ
49
59
1
-
at IPP = 1 A
60
71
1.2
-
V
Reverse clamping voltage
Forward clamping voltage
Capacitance
VC
VF
at IPP = IPPM = ꢀ.5 A
at IPP = 1 A
-
V
-
V
at IPP = IPPM = ꢀ.5 A
at VR = 0 V; f = 1 MHz
at VR = 18 V; f = 1 MHz
-
1.ꢀ
52
12
V
-
65
-
pF
pF
CD
-
Note
Ratings at 25 °C, ambient temperature unless otherwise specified. BiAs mode (between pin 1 to ꢀ or pin 2 to ꢀ)
•
BiSy-MODE (1-line bidirectional symmetrical protection mode)
If a bipolar symmetrical protection device is needed the GSOTxxC can also be used as a single line protection device. Therefore
pin 1 has to be connected to the signal- or data-line (L1) and pin 2 to ground (or vice versa). Pin ꢀ must not be connected.
Positive and negative voltage transients will be clamped in the same way. The clamping current through the GSOTxxC passes
one diode in forward direction and the other one in reverse direction. The clamping voltage (VC) is defined by the breakthrough
voltage (VBR) level of one diode plus the forward voltage of the other diode plus the voltage drop at the series impedances
(resistances and inductances) of the protection device.
Due to the same clamping levels in positive and negative direction the GSOTxxC voltage clamping behaviour is bidirectional
and symmetrical (BiSy).
Document Number: 85824
Rev. 2.0, 22-Jul-10
For technical questions, contact: ESDprotection@vishay.com
www.vishay.com
7
GSOT03C to GSOT36C
Two-Line ESD-Protection in SOT-2ꢀ
Vishay Semiconductors
L1
BiSy
Ground
20361
ELECTRICAL CHARACTERISTICS GSOT03C
PARAMETER
TEST CONDITIONS/REMARKS
SYMBOL
Nchannel
VRWM
IR
MIN.
TYP.
-
MAX.
1
UNIT
lines
V
Protection paths
Number of lines which can be protected
at IR = 100 μA
-
ꢀ.8
-
Reverse working voltage
Reverse current
-
-
at VR = ꢀ.8 V
-
100
-
μA
V
Reverse breakdown voltage
at IR = 1 mA
VBR
4.5
-
5.ꢀ
7
at IPP = 1 A
8.4
16.8
ꢀ00
-
V
Reverse clamping voltage
Capacitance
VC
CD
at IPP = IPPM = ꢀ0 A
at VR = 0 V; f = 1 MHz
at VR = 1.6 V; f = 1 MHz
-
14
210
190
V
-
pF
pF
-
Note
•
Ratings at 25 °C, ambient temperature unless otherwise specified. BiAs mode (between pin 1 to 2 or pin 2 to 1; pin ꢀ not connected)
ELECTRICAL CHARACTERISTICS GSOT04C
PARAMETER
TEST CONDITIONS/REMARKS
Number of lines which can be protected
at IR = 20 μA
SYMBOL
Nchannel
VRWM
IR
MIN.
TYP.
-
MAX.
UNIT
lines
V
Protection paths
-
4.5
-
1
-
Reverse working voltage
Reverse current
-
at VR = 4:5 V
-
20
-
μA
V
Reverse breakdown voltage
at IR = 1 mA
VBR
5.5
-
6.8
7.5
15.7
155
1ꢀ5
at IPP = 1 A
9
V
Reverse clamping voltage
Capacitance
VC
CD
at IPP = IPPM = ꢀ0 A
at VR = 0 V; f = 1 MHz
at VR = 2 V; f = 1 MHz
-
18.8
225
-
V
-
pF
pF
-
Note
•
Ratings at 25 °C, ambient temperature unless otherwise specified. BiAs mode (between pin 1 to 2 or pin 2 to 1; pin ꢀ not connected)
ELECTRICAL CHARACTERISTICS GSOT05C
PARAMETER
TEST CONDITIONS/REMARKS
Number of lines which can be protected
at IR = 10 μA
SYMBOL
Nchannel
VRWM
IR
MIN.
TYP.
-
MAX.
1
UNIT
lines
V
Protection paths
-
5.5
-
Reverse working voltage
Reverse current
-
-
at VR = 5.5 V
-
10
-
μA
V
Reverse breakdown voltage
at IR = 1 mA
VBR
6.5
-
7.5
8.1
17
1ꢀ0
100
at IPP = 1 A
9.7
20.4
175
-
V
Reverse clamping voltage
Capacitance
VC
CD
at IPP = IPPM = 18 A
at VR = 0 V; f = 1 MHz
at VR = 4 V; f = 1 MHz
-
V
-
pF
pF
-
Note
Ratings at 25 °C, ambient temperature unless otherwise specified. BiAs mode (between pin 1 to 2 or pin 2 to 1; pin ꢀ not connected)
•
www.vishay.com
8
For technical questions, contact: ESDprotection@vishay.com
Document Number: 85824
Rev. 2.0, 22-Jul-10
GSOT03C to GSOT36C
Two-Line ESD-Protection in SOT-2ꢀ
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS GSOT08C
PARAMETER
TEST CONDITIONS/REMARKS
SYMBOL
Nchannel
VRWM
IR
MIN.
TYP.
-
MAX.
UNIT
lines
V
Protection paths
Number of lines which can be protected
at IR = 5 μA
-
8.5
-
1
-
Reverse working voltage
Reverse current
-
at VR = 8.5 V
-
5
μA
V
Reverse breakdown voltage
at IR = 1 mA
VBR
9.5
-
10.7
11.7
18.5
80
-
at IPP = 1 A
14
22.2
125
-
V
Reverse clamping voltage
Capacitance
VC
CD
at IPP = IPPM = 18 A
at VR = 0 V; f = 1 MHz
at VR = 4 V; f = 1 MHz
-
V
-
pF
pF
-
60
Note
•
Ratings at 25 °C, ambient temperature unless otherwise specified. BiAs mode (between pin 1 to 2 or pin 2 to 1; pin ꢀ not connected)
ELECTRICAL CHARACTERISTICS GSOT12C
PARAMETER
TEST CONDITIONS/REMARKS
Number of lines which can be protected
at IR = 1 μA
SYMBOL
Nchannel
VRWM
IR
MIN.
TYP.
-
MAX.
UNIT
lines
V
Protection paths
-
1
-
Reverse working voltage
Reverse current
12.5
-
at VR = 12.5 V
-
-
1
μA
V
Reverse breakdown voltage
at IR = 1 mA
VBR
1ꢀ.5
15.7
16.4
2ꢀ.4
58
-
at IPP = 1 A
-
-
-
-
19.7
28.1
75
-
V
Reverse clamping voltage
Capacitance
VC
CD
at IPP = IPPM = 12 A
at VR = 0 V; f = 1 MHz
at VR = 7.5 V; f = 1 MHz
V
pF
pF
ꢀ6
Note
•
Ratings at 25 °C, ambient temperature unless otherwise specified. BiAs mode (between pin 1 to 2 or pin 2 to 1; pin ꢀ not connected)
ELECTRICAL CHARACTERISTICS GSOT15C
PARAMETER
TEST CONDITIONS/REMARKS
Number of lines which can be protected
at IR = 1 μA
SYMBOL
Nchannel
VRWM
IR
MIN.
TYP.
-
MAX.
UNIT
lines
V
Protection paths
-
1
-
Reverse working voltage
Reverse current
15.5
-
at VR = 15.5 V
-
17
-
-
1
μA
V
Reverse breakdown voltage
at IR = 1 mA
VBR
18.7
20.4
26.6
45
-
at IPP = 1 A
24.5
ꢀ0.6
60
-
V
Reverse clamping voltage
Capacitance
VC
CD
at IPP = IPPM = 8 A
-
V
at VR = 0 V; f = 1 MHz
at VR = 7.5 V; f = 1 MHz
-
pF
pF
-
25
Note
•
Ratings at 25 °C, ambient temperature unless otherwise specified. BiAs mode (between pin 1 to 2 or pin 2 to 1; pin ꢀ not connected)
ELECTRICAL CHARACTERISTICS GSOT24C
PARAMETER
TEST CONDITIONS/REMARKS
Number of lines which can be protected
at IR = 1 μA
SYMBOL
Nchannel
VRWM
IR
MIN.
TYP.
-
MAX.
UNIT
lines
V
Protection paths
-
1
-
Reverse working voltage
Reverse current
24.5
-
at VR = 24.5 V
-
-
1
μA
V
Reverse breakdown voltage
at IR = 1 mA
VBR
27.5
ꢀ0.7
ꢀ4
40
ꢀꢀ
18
-
at IPP = 1 A
-
-
-
-
41
48
40
-
V
Reverse clamping voltage
Capacitance
VC
CD
at IPP = IPPM = 5 A
V
at VR = 0 V; f = 1 MHz
at VR = 12 V; f = 1 MHz
pF
pF
Note
Ratings at 25 °C, ambient temperature unless otherwise specified. BiAs mode (between pin 1 to 2 or pin 2 to 1; pin ꢀ not connected)
•
Document Number: 85824
Rev. 2.0, 22-Jul-10
For technical questions, contact: ESDprotection@vishay.com
www.vishay.com
9
GSOT03C to GSOT36C
Two-Line ESD-Protection in SOT-2ꢀ
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS GSOT36C
PARAMETER
TEST CONDITIONS/REMARKS
SYMBOL
Nchannel
VRWM
IR
MIN.
TYP.
-
MAX.
UNIT
lines
V
Protection paths
Number of lines which can be protected
at IR = 1 μA
-
1
-
Reverse working voltage
Reverse current
ꢀ6.5
-
at VR = ꢀ6.5 V
-
-
1
μA
V
Reverse breakdown voltage
at IR = 1 mA
VBR
ꢀ9.5
4ꢀ.7
50
60
26
10
-
at IPP = 1 A
-
-
-
-
60
72
ꢀꢀ
-
V
Reverse clamping voltage
Capacitance
VC
CD
at IPP = IPPM = ꢀ.5 A
at VR = 0 V; f = 1 MHz
at VR = 18 V; f = 1 MHz
V
pF
pF
Note
Ratings at 25 °C, ambient temperature unless otherwise specified. BiAs mode (between pin 1 to 2 or pin 2 to 1; pin ꢀ not connected)
•
PACKAGE DIMENSIONS in millimeters (inches): SOT-23
ꢀ.1 (0.122)
2.8 (0.110)
0.550 ref. (0.022 ref.)
0.5 (0.020)
0.ꢀ (0.012)
0.45 (0.018)
0.ꢀ5 (0.014)
0.45 (0.018)
0.ꢀ5 (0.014)
2.6 (0.102)
2.ꢀ5 (0.09ꢀ)
0.45 (0.018)
0.ꢀ5 (0.014)
Foot print recommendation:
0.7 (0.028)
1 (0.0ꢀ9)
0.9 (0.0ꢀ5)
1 (0.0ꢀ9)
0.9 (0.0ꢀ5)
0.95 (0.0ꢀ7)
0.95 (0.0ꢀ7)
Document no.: 6.541-5014.01-4
Rev. 8 - Date: 2ꢀ.Sept.2009
17418
www.vishay.com
10
For technical questions, contact: ESDprotection@vishay.com
Document Number: 85824
Rev. 2.0, 22-Jul-10
SOT-23
Vishay Semiconductors
SOT-23
PACKAGE DIMENSIONS in millimeters (inches)
3.1 (0.122)
2.8 (0.110)
0.550 ref. (0.022 ref.)
0.5 (0.020)
0.3 (0.012)
0.45 (0.018)
0.35 (0.014)
0.45 (0.018)
0.35 (0.014)
2.6 (0.102)
2.35 (0.093)
0.45 (0.018)
0.35 (0.014)
Foot print recommendation:
0.7 (0.028)
1 (0.039)
0.9 (0.035)
1 (0.039)
0.9 (0.035)
0.95 (0.037)
0.95 (0.037)
Document no.: 6.541-5014.01-4
Rev. 8 - Date: 23.Sept.2009
17418
Document Number: 84004
Rev. 1.3, 01-Jul-10
For technical questions within your region, please contact one of the following:
Diodes Americas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
28
Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree
to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and
damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay
or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to
obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 11-Mar-11
www.vishay.com
1
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