GT100DA60U [VISHAY]
Insulated Gate Bipolar Transistor (Trench IGBT), 100 A; 绝缘栅双极晶体管（ IGBT沟槽） ， 100 A
| 型号： | GT100DA60U |
| 厂家： | 
VISHAY |
| 描述： | Insulated Gate Bipolar Transistor (Trench IGBT), 100 A |
| 文件： | 总10页 (文件大小：175K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
GT100DA60U
Vishay Semiconductors
Insulated Gate Bipolar Transistor
(Trench IGBT), 100 A
FEATURES
• Trench IGBT technology with positive
temperature coefficient
• Square RBSOA
• 3 μs short circuit capability
• FRED Pt® antiparallel diodes with ultrasoft reverse
recovery
SOT-227
• TJ maximum = 175 °C
• Fully isolated package
• Very low internal inductance ( 5 nH typical)
• Industry standard outline
• UL approved file E78996
• Compliant to RoHS directive 2002/95/EC
PRODUCT SUMMARY
VCES
600 V
BENEFITS
I
C DC
CE(on) typical at 100 A, 25 °C
IF DC
100 A at 117 °C
1.72 V
• Designed for increased operating efficiency in power
conversion: UPS, SMPS, welding, induction heating
V
100 A at 25 °C
• Easy to assemble and parallel
• Direct mounting to heatsink
• Plug-in compatible with other SOT-227 packages
• Speed 4 kHz to 30 kHz
• Lower conduction losses and switching losses
• Low EMI, requires less snubbing
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
MAX.
600
184
137
350
350
100
71
UNITS
Collector to emitter voltage
VCES
V
TC = 25 °C
C = 80 °C
(1)
Continuous collector current
IC
T
Pulsed collector current
ICM
ILM
Clamped inductive load current
A
TC = 25 °C
TC = 80 °C
Diode continuous forward current
IF
Peak diode forward current
Gate to emitter voltage
IFSM
VGE
200
20
V
W
V
TC = 25 °C
TC = 117 °C
TC = 25 °C
577
223
205
79
Power dissipation, IGBT
PD
Power dissipation, diode
Isolation voltage
PD
TC = 117 °C
VISOL
Any terminal to case, t = 1 min
2500
Note
(1)
Maximum continuous collector current must be limited to 100 A to do not exceed the maximum temperature of terminals
Document Number: 93185
Revision: 22-Jul-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
GT100DA60U
Vishay Semiconductors
Insulated Gate Bipolar Transistor
(Trench IGBT), 100 A
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
600
-
TYP.
-
MAX.
-
UNITS
Collector to emitter breakdown voltage
VBR(CES)
VGE = 0 V, IC = 250 μA
VGE = 15 V, IC = 100 A
1.72
2.0
4.6
2.0
2.2
6.5
Collector to emitter voltage
VCE(on)
VGE(th)
V
VGE = 15 V, IC = 100 A, TJ = 125 °C
VCE = VGE, IC = 250 μA
-
Gate threshold voltage
3.5
Temperature coefficient of
threshold voltage
VGE(th)/TJ VCE = VGE, IC = 1 mA (25 °C to 125 °C)
-
- 16.8
-
mV/°C
VGE = 0 V, VCE = 600 V
ICES
-
-
-
-
-
0.6
0.15
1.78
1.39
-
100
3
μA
Collector to emitter leakage current
VGE = 0 V, VCE = 600 V, TJ = 125 °C
mA
IF = 40 A, VGE = 0 V
VFM
2.21
1.74
200
Forward voltage drop
V
IF = 40 A, VGE = 0 V, TJ = 125 °C
Gate to emitter leakage current
IGES
VGE
=
20 V
nA
SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
0.35
2.08
2.43
0.41
2.83
3.24
162
55
MAX.
UNITS
Turn-on switching loss
Turn-off switching loss
Total switching loss
Turn-on switching loss
Turn-off switching loss
Total switching loss
Turn-on delay time
Rise time
Eon
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IC = 100 A, VCC = 360 V,
VGE = 15 V, Rg = 5
L = 500 μH, TJ = 25 °C
Eoff
Etot
mJ
Eon
Energy losses
include tail and
diode recovery
(see fig. 18)
Eoff
Etot
IC = 100 A, VCC = 360 V,
VGE = 15 V, Rg = 5
L = 500 μH, TJ = 125 °C
td(on)
tr
td(off)
tf
ns
Turn-off delay time
Fall time
150
129
TJ = 175 °C, IC = 350 A, Rg = 22
VGE = 15 V to 0 V, VCC = 400 V,
VP = 600 V, L = 500 μH
Reverse bias safe operating area
RBSOA
Fullsquare
Diode reverse recovery time
Diode peak reverse current
Diode recovery charge
trr
Irr
-
-
-
-
-
-
61
4
85
7
ns
A
IF = 50 A, dIF/dt = 200 A/μs, VR = 200 V
Qrr
trr
120
133
12
297
154
15
nC
ns
A
Diode reverse recovery time
Diode peak reverse current
Diode recovery charge
IF = 50 A, dIF/dt = 200 A/μs,
Irr
V
R = 200 V, TJ = 125 °C
Qrr
750
1150
nC
TJ = 175 °C, Rg = 22 ,
VGE = 15 V to 0 V, VCC = 400 V,
Vp = 600 V
Short circuit safe operating area
SCSOA
3
μs
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For technical questions within your region, please contact one of the following:
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Document Number: 93185
Revision: 22-Jul-10
GT100DA60U
Vishay Semiconductors
Insulated Gate Bipolar Transistor
(Trench IGBT), 100 A
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
175
0.26
0.73
-
UNITS
Maximum junction and storage temperature range
TJ, TStg
- 40
-
-
°C
IGBT
-
-
-
-
-
Junction to case
Diode
RthJC
RthCS
-
°C/W
Case to sink per module
Mounting torque, 6-32 or M3 screw
Weight
0.05
-
1.3
-
Nm
g
30
180
160
140
120
100
80
300
275
250
225
200
175
150
125
100
75
TJ = 125 °C
TJ = 25 °C
TJ = 175 °C
60
40
50
20
25
0
0
0
20 40 60 80 100 120 140 160 180 200
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
93185_01
IC - Continuous Collector Current (A)
93185_02
VCE (V)
Fig. 1 - Maximum DC IGBT Collector Current vs.
Case Temperature
Fig. 3 - Typical IGBT Collector Current Characteristics
VGE = 15 V
1000
180
160
140
120
100
80
100
10
1
60
40
0.1
20
0.01
0
0
20
40
60
80
100
120
1
10
100
1000
IF - Continuous Forward Current (A)
93185_02
VCE (V)
93185_04
Fig. 2 - IGBT Reverse Bias SOA
TJ = 175 °C, VGE = 15 V
Fig. 4 - Maximum DC Forward Current vs.
Case Temperature
Document Number: 93185
Revision: 22-Jul-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
3
GT100DA60U
Vishay Semiconductors
Insulated Gate Bipolar Transistor
(Trench IGBT), 100 A
200
175
2.5
2.0
1.5
150
TJ = 175 °C
100 A
50 A
125
100
TJ = 125 °C
75
50
25
0
TJ = 25 °C
27 A
1.0
0
0.5
1.0
1.5
2.0
2.5
3.0
20
60
100
140
180
93185_05
VFM (V)
93185_08
TJ (°C)
Fig. 5 - Typical Diode Forward Characteristics
Fig. 8 - Typical IGBT Collector to Emitter Voltage vs.
Junction Temperature, VGE = 15 V
10
3.0
2.5
2.0
1.5
1.0
0.5
0
1
TJ = 175 °C
0.1
Eoff
TJ = 125 °C
0.01
0.001
TJ = 25 °C
0.0001
Eon
0.00001
100
200
300
400
500
600
10
30
50
70
90
110
93185_06
VCES (V)
93185_09
IC (A)
Fig. 6 - Typical IGBT Zero Gate Voltage Collector Current
Fig. 9 - Typical IGBT Energy Loss vs. IC
TJ = 125 °C, L = 500 μH, VCC = 360 V,
Rg = 5 , VGE = 15 V
5.0
1000
100
10
tf
TJ = 25 °C
4.5
td(off)
4.0
3.5
td(on)
3.0
tr
TJ = 125 °C
2.5
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
0
20
40
60
80
100
120
93185_07
IC (mA)
93185_10
IC (A)
Fig. 7 - Typical IGBT Threshold Voltage
Fig. 10 - Typical IGBT Switching Time vs. IC
TJ = 125 °C, L = 500 μH, VCC = 360 V,
Rg = 5 , VGE = 15 V
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For technical questions within your region, please contact one of the following:
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Document Number: 93185
Revision: 22-Jul-10
GT100DA60U
Vishay Semiconductors
Insulated Gate Bipolar Transistor
(Trench IGBT), 100 A
6
5
4
3
2
1
0
190
170
150
130
110
90
TJ = 125 °C
Eoff
Eon
TJ = 25 °C
70
50
30
100
0
10
20
30
40
50
1000
93185_11
Rg (Ω)
93185_13
dIF/dt (A/μs)
Fig. 11 - Typical IGBT Energy Loss vs. Rg
TJ = 125 °C, IC = 100 A, L = 500 μH,
Fig. 13 - Typical trr Diode vs. dIF/dt
Vrr = 200 V, IF = 50 A
VCC = 360 V, VGE = 15 V
1000
100
10
30
td(on)
25
20
15
10
5
td(off)
TJ = 125 °C
tf
tr
TJ = 25 °C
0
100
0
10
20
30
40
50
1000
93185_12
Rg (Ω)
93185_14
dIF/dt (A/μs)
Fig. 12 - Typical IGBT Switching Time vs. Rg
TJ = 125 °C, L = 500 μH, VCC = 360 V,
Fig. 14 - Typical Irr Diode vs. dIF/dt
rr = 200 V, IF = 50 A
V
IC = 100 A, VGE = 15 V
1400
1200
1000
800
600
400
200
0
TJ = 125 °C
TJ = 25 °C
100
1000
93185_15
dIF/dt (A/μs)
Fig. 15 - Typical Qrr Diode vs. dIF/dt
V
rr = 200 V, IF = 50 A
Document Number: 93185
Revision: 22-Jul-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
5
GT100DA60U
Vishay Semiconductors
Insulated Gate Bipolar Transistor
(Trench IGBT), 100 A
1
0.1
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
DC
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
93185_16
t1 - Rectangular Pulse Duration (s)
Fig. 16 - Maximum Thermal Impedance ZthJC Characteristics (IGBT)
1
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
DC
0.1
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
93185_17
t1 - Rectangular Pulse Duration (s)
Fig. 17 - Maximum Thermal Impedance ZthJC Characteristics (Diode)
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For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 93185
Revision: 22-Jul-10
GT100DA60U
Vishay Semiconductors
Insulated Gate Bipolar Transistor
(Trench IGBT), 100 A
VCC
R =
ICM
L
D.U.T.
VC
*
50 V
1000 V
+
- VCC
D.U.T.
1
2
Rg
* Driver same type as D.U.T.; VC = 80 % of Vce(max)
* Note: Due to the 50 V power supply, pulse width and inductor
will increase to obtain Id
Fig. 18a - Clamped Inductive Load Test Circuit
Fig. 18b - Pulsed Collector Current Test Circuit
Diode clamp/
D.U.T.
L
-
+
- 5 V
+
-
D.U.T./
driver
VCC
Rg
Fig. 19a - Switching Loss Test Circuit
1
2
90 %
10 %
3
VC
90 %
10 %
td(off)
5 %
IC
tf
tr
td(on)
t = 5 µs
Eoff
Eon
Ets = (Eon + Eoff
)
Fig. 19b - Switching Loss Waveforms Test Circuit
Document Number: 93185
Revision: 22-Jul-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
7
GT100DA60U
Vishay Semiconductors
Insulated Gate Bipolar Transistor
(Trench IGBT), 100 A
ORDERING INFORMATION TABLE
Device code
G
T
100
D
A
60
U
1
2
3
4
5
6
7
1
2
3
4
5
6
7
-
Insulated Gate Bipolar Transistor (IGBT)
T = Trench IGBT technology
-
-
-
-
-
-
Current rating (100 = 100 A)
Circuit configuration (D = Single switch with antiparallel diode)
Package indicator (A = SOT-227)
Voltage rating (60 = 600 V)
Speed/type (U = Ultrafast)
CIRCUIT CONFIGURATION
3 (C)
2 (G)
1, 4 (E)
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95036
www.vishay.com/doc?95037
Packaging information
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For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 93185
Revision: 22-Jul-10
Outline Dimensions
Vishay Semiconductors
SOT-227
DIMENSIONS in millimeters (inches)
38.30 (1.508)
37.80 (1.488)
Chamfer
2.00 (0.079) x 45°
4 x M4 nuts
Ø 4.40 (0.173)
Ø 4.20 (0.165)
-A-
4
1
3
2
25.70 (1.012)
25.20 (0.992)
6.25 (0.246)
12.50 (0.492)
7.50 (0.295)
-B-
R full
15.00 (0.590)
30.20 (1.189)
29.80 (1.173)
M
M
M
B
0.25 (0.010)
C A
8.10 (0.319)
4 x
7.70 (0.303)
2.10 (0.082)
1.90 (0.075)
2.10 (0.082)
1.90 (0.075)
12.30 (0.484)
11.80 (0.464)
-C-
0.12 (0.005)
Notes
•
•
Dimensioning and tolerancing per ANSI Y14.5M-1982
Controlling dimension: millimeter
Document Number: 95036
Revision: 28-Aug-07
For technical questions, contact: indmodules@vishay.com
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Disclaimer
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Document Number: 91000
Revision: 11-Mar-11
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