GT100NA120UX [VISHAY]
'High Side Chopper' IGBT SOT-227 (Trench IGBT), 100 A; “高端砍刀” IGBT SOT- 227 （沟道IGBT ） ， 100 A
| 型号： | GT100NA120UX |
| 厂家： | 
VISHAY |
| 描述： | 'High Side Chopper' IGBT SOT-227 (Trench IGBT), 100 A |
| 文件： | 总10页 (文件大小：176K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
GT100NA120UX
Vishay Semiconductors
"High Side Chopper" IGBT SOT-227
(Trench IGBT), 100 A
FEATURES
• Trench IGBT technology
• Very low VCE(on)
• Square RBSOA
• HEXFRED® clamping diode
• 10 μs short circuit capability
• Fully isolated package
SOT-227
• Speed 4 kHz to 30 kHz
• Very low internal inductance ( 5 nH typical)
• Industry standard outline
• UL approved file E78996
• Compliant to RoHS directive 2002/95/EC
PRODUCT SUMMARY
BENEFITS
VCES
1200 V
100 A at 71 °C
2.36 V
• Designed for increased operating efficiency in power
conversion: UPS, SMPS, welding, induction heating
IC DC
VCE(on) typical at 100 A, 25 °C
• Easy to assemble and parallel
• Direct mounting on heatsink
• Plug-in compatible with other SOT-227 packages
• Low EMI, requires less snubbing
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
MAX.
1200
134
92
UNITS
Collector to emitter voltage
VCES
V
TC = 25 °C
Continuous collector current
IC
TC = 80 °C
Pulsed collector current
ICM
ILM
270
270
87
A
Clamped inductive load current
TC = 25 °C
TC = 80 °C
Diode continuous forward current
Gate to emitter voltage
IF
59
VGE
PD
20
V
W
V
TC = 25 °C
463
260
338
190
2500
Power dissipation, IGBT
TC = 80 °C
TC = 25 °C
Power dissipation, diode
RMS isolation voltage
PD
TC = 80 °C
VISOL
Any terminal to case, t = 1 min
Document Number: 93100
Revision: 22-Jul-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
GT100NA120UX
Vishay Semiconductors
"High Side Chopper" IGBT SOT-227
(Trench IGBT), 100 A
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Collector to emitter breakdown
voltage
VBR(CES)
VGE = 0 V, IC = 1 mA
1200
-
-
VGE = 15 V, IC = 50 A
-
-
1.79
2.36
2.05
2.8
2.33
2.85
2.62
3.42
7
VGE = 15 V, IC = 100 A
V
Collector to emitter voltage
VCE(on)
VGE = 15 V, IC = 50 A, TJ = 125 °C
VGE = 15 V, IC = 100 A, TJ = 125 °C
VCE = VGE, IC = 500 μA
-
-
Gate threshold voltage
VGE(th)
5
5.8
Temperature coefficient of
threshold voltage
V
GE(th)/TJ VCE = VGE, IC = 1 mA (25 °C to 125 °C)
-
- 15.6
-
mV/°C
VGE = 0 V, VCE = 1200 V
VGE = 0 V, VCE = 1200 V, TJ = 125 °C
IR = 1 mA
-
0.5
0.052
-
100
2
μA
mA
V
Collector to emitter leakage current
Diode reverse breakdown voltage
ICES
VBR
-
1200
-
IC = 50 A, VGE = 0 V
-
-
-
-
-
-
-
2.53
3.32
2.66
3.7
4
3.55
4.35
3.70
4.50
50
IC = 100 A, VGE = 0 V
Diode forward voltage drop
VFM
V
IC = 50 A, VGE = 0 V, TJ = 125 °C
IC = 100 A, VGE = 0 V, TJ = 125 °C
VR = VR rated
μA
mA
nA
Diode reverse leakage current
Gate to emitter leakage current
IRM
TJ = 125 °C, VR = VR rated
0.6
-
3
IGES
VGE
=
20 V
200
SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
400
MAX.
UNITS
Total gate charge (turn-on)
Gate to emitter charge (turn-on)
Gate to collector charge (turn-on)
Turn-on switching loss
Turn-off switching loss
Total switching loss
Turn-on switching loss
Turn-off switching loss
Total switching loss
Turn-on delay time
Qg
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Qge
Qgc
Eon
IC = 100 A, VCC = 600 V, VGE = 15 V
120
nC
170
21.9
5.48
27.38
23.6
7.65
31.25
195
IC = 100 A, VCC = 600 V,
VGE = 15 V, Rg = 5
L = 500 μH
Eoff
Etot
Eon
mJ
ns
Energy losses
include tail and
diode recovery
(see fig. 18)
Eoff
Etot
td(on)
tr
IC = 100 A, VCC = 600 V,
VGE = 15 V, Rg = 5
L = 500 μH, TJ = 125 °C
Rise time
259
Turn-off delay time
td(off)
tf
188
Fall time
212
TJ = 150 °C, IC = 270 A, Rg = 22
GE = 15 V to 0 V, VCC = 900 V,
VP = 1200 V
Reverse bias safe operating area
Short circuit safe operating area
RBSOA
SCSOA
V
Fullsquare
10
TJ = 150 °C, Rg = 22
VGE = 15 V to 0 V, VCC = 900 V,
μs
VP = 1200 V
Diode reverse recovery time
Diode peak reverse current
Diode recovery charge
trr
Irr
-
-
-
-
-
-
129
11
161
14
ns
A
IF = 50 A, dIF/dt = 200 A/μs, VR = 200 V
Qrr
trr
700
208
17
1046
257
21
nC
ns
A
Diode reverse recovery time
Diode peak reverse current
Diode recovery charge
IF = 50 A, dIF/dt = 200 A/μs,
Irr
VR = 200 V, TJ = 125 °C
Qrr
1768
2698
nC
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For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 93100
Revision: 22-Jul-10
GT100NA120UX
Vishay Semiconductors
"High Side Chopper" IGBT SOT-227
(Trench IGBT), 100 A
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNITS
Maximum junction and storage temperature
range
TJ, TStg
- 40
-
150
°C
IGBT
Diode
-
-
-
-
-
-
-
0.27
0.37
-
Thermal resistance, junction to case
RthJC
RthCS
°C/W
Thermal resistance, case to sink per module
0.05
-
Mounting torque, 6-32 or M3 screw
Weight
1.3
-
Nm
g
30
300
250
200
150
100
50
160
140
120
100
80
TJ = 25 °C
TJ = 125 °C
60
40
20
0
0
0
1
2
3
4
5
6
0
20
40
60
80 100 120 140 160
VCE (V)
IC - Continuous Collector Current (A)
Fig. 1 - Maximum DC IGBT Collector Current vs.
Case Temperature
Fig. 3 - Typical IGBT Collector Current Characteristics
1000
100
10
0.1
TJ = 125 °C
0.01
1
0.001
TJ = 25 °C
0.1
0.01
0.0001
100
300
500
700
900
1100
1
10
100
1000
10 000
VCE (V)
VCES (V)
Fig. 2 - IGBT Reverse Bias SOA
TJ = 150 °C, VGE = 15 V
Fig. 4 - Typical IGBT Zero Gate Voltage Collector Current
Document Number: 93100
Revision: 22-Jul-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
3
GT100NA120UX
Vishay Semiconductors
"High Side Chopper" IGBT SOT-227
(Trench IGBT), 100 A
6.5
300
250
200
150
TJ = 25 °C
6.0
TJ = 25 °C
5.5
5.0
4.5
4.0
3.5
TJ = 125 °C
TJ = 125 °C
100
50
0
0.0002
0.0004
0.0006
0.0008
0.001
0
1
2
3
4
5
6
7
IC (mA)
VFM (V)
Fig. 5 - Typical IGBT Threshold Voltage
Fig. 8 - Typical Diode Forward Characteristics
3.0
2.5
2.0
1.5
1.0
25
20
15
10
5
100 A
50 A
Eon
27 A
Eoff
0
10
30
50
70
90
110 130 150
10 20 30 40 50 60 70 80 90 100
TJ (°C)
IC (A)
Fig. 6 - Typical IGBT Collector to Emitter Voltage vs.
Junction Temperature, VGE = 15 V
Fig. 9 - Typical IGBT Energy Loss vs. IC
TJ = 125 °C, L = 500 μH, VCC = 600 V,
Rg = 5 , VGE = 15 V
160
140
120
100
80
1000
100
10
tf
td(off)
td(on)
60
tr
40
20
0
0
20
40
60
80
100
0
20
40
60
80
100
120
IF - Continuous Forward Current (A)
IC (A)
Fig. 7 - Maximum DC Forward Current vs.
Case Temperature
Fig. 10 - Typical IGBT Switching Time vs. IC
TJ = 125 °C, L = 500 μH, VCC = 600 V,
Rg = 5 , VGE = 15 V
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For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 93100
Revision: 22-Jul-10
GT100NA120UX
Vishay Semiconductors
"High Side Chopper" IGBT SOT-227
(Trench IGBT), 100 A
40
35
30
25
20
15
10
0
250
230
210
190
170
150
130
110
90
Eon
TJ = 125 °C
TJ = 25 °C
Eoff
20
70
100
0
10
30
40
50
1000
Rg (Ω)
dIF/dt (A/µs)
Fig. 11 - Typical IGBT Energy Loss vs. Rg
TJ = 125 °C, IC = 100 A, L = 500 μH,
Fig. 13 - Typical trr Diode vs. dIF/dt
VR = 200 V, IF = 50 A
VCC = 600 V, VGE = 15 V
1000
40
35
30
25
20
15
10
5
td(on)
td(off)
TJ = 125 °C
tf
tr
TJ = 25 °C
100
0
100
0
10
20
30
40
50
1000
Rg (Ω)
dIF/dt (A/µs)
Fig. 14 - Typical Irr Diode vs. dIF/dt
Fig. 12 - Typical IGBT Switching Time vs. Rg
TJ = 125 °C, L = 500 μH, VCC = 600 V,
VR = 200 V, IF = 50 A
I
C = 100 A, VGE = 15 V
2650
2400
2150
1900
1650
1400
1150
900
TJ = 125 °C
TJ = 25 °C
650
400
100
1000
dIF/dt (A/µs)
Fig. 15 - Typical Qrr Diode vs. dIF/dt
V
R = 200 V, IF = 50 A
Document Number: 93100
Revision: 22-Jul-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
5
GT100NA120UX
Vishay Semiconductors
"High Side Chopper" IGBT SOT-227
(Trench IGBT), 100 A
1
0.1
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
0.01
DC
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
t1 - Rectangular Pulse Duration (s)
Fig. 16 - Maximum Thermal Impedance ZthJC Characteristics (IGBT)
1
0.1
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
0.01
D = 0.01
DC
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
t1 - Rectangular Pulse Duration (s)
Fig. 17 - Maximum Thermal Impedance ZthJC Characteristics (Diode)
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For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 93100
Revision: 22-Jul-10
GT100NA120UX
Vishay Semiconductors
"High Side Chopper" IGBT SOT-227
(Trench IGBT), 100 A
VCC
R =
ICM
L
D.U.T.
VC
*
50 V
1000 V
+
- VCC
D.U.T.
1
2
Rg
* Driver same type as D.U.T.; VC = 80 % of Vce(max)
* Note: Due to the 50 V power supply, pulse width and inductor
will increase to obtain Id
Fig. 18a - Clamped Inductive Load Test Circuit
Fig. 18b - Pulsed Collector Current Test Circuit
Diode clamp/
D.U.T.
L
-
+
- 5 V
+
-
D.U.T./
driver
VCC
Rg
Fig. 19a - Switching Loss Test Circuit
1
2
90 %
10 %
3
VC
90 %
10 %
td(off)
5 %
IC
tf
tr
td(on)
t = 5 µs
Eoff
Eon
Ets = (Eon + Eoff
)
Fig. 19b - Switching Loss Waveforms Test Circuit
Document Number: 93100
Revision: 22-Jul-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
7
GT100NA120UX
Vishay Semiconductors
"High Side Chopper" IGBT SOT-227
(Trench IGBT), 100 A
ORDERING INFORMATION TABLE
Device code
G
T
100
N
A
120
U
X
1
2
3
4
5
6
7
8
1
2
3
4
5
6
7
8
-
-
-
-
-
-
-
-
Insulated Gate Bipolar Transistor (IGBT)
T = Trench IGBT
Current rating (100 = 100 A)
Circuit configuration (N = High side chopper)
Package indicator (A = SOT-227)
Voltage rating (120 = 1200 V)
Speed/type (U = Ultrafast IGBT)
Diode (X = HEXFRED®)
CIRCUIT CONFIGURATION
3
2
1
4
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95036
www.vishay.com/doc?95037
Packaging information
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For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 93100
Revision: 22-Jul-10
Outline Dimensions
Vishay Semiconductors
SOT-227
DIMENSIONS in millimeters (inches)
38.30 (1.508)
37.80 (1.488)
Chamfer
2.00 (0.079) x 45°
4 x M4 nuts
Ø 4.40 (0.173)
Ø 4.20 (0.165)
-A-
4
1
3
2
25.70 (1.012)
25.20 (0.992)
6.25 (0.246)
12.50 (0.492)
7.50 (0.295)
-B-
R full
15.00 (0.590)
30.20 (1.189)
29.80 (1.173)
M
M
M
B
0.25 (0.010)
C A
8.10 (0.319)
4 x
7.70 (0.303)
2.10 (0.082)
1.90 (0.075)
2.10 (0.082)
1.90 (0.075)
12.30 (0.484)
11.80 (0.464)
-C-
0.12 (0.005)
Notes
•
•
Dimensioning and tolerancing per ANSI Y14.5M-1982
Controlling dimension: millimeter
Document Number: 95036
Revision: 28-Aug-07
For technical questions, contact: indmodules@vishay.com
www.vishay.com
1
Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree
to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and
damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay
or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to
obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 11-Mar-11
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