GZF12C/G2 [VISHAY]
Zener Diode, 12V V(Z), 5.39%, 0.8W, Silicon, Unidirectional, DO-219AB, PLASTIC, SMF, 2 PIN;
| 型号： | GZF12C/G2 |
| 厂家： | 
VISHAY |
| 描述： | Zener Diode, 12V V(Z), 5.39%, 0.8W, Silicon, Unidirectional, DO-219AB, PLASTIC, SMF, 2 PIN |
| 文件： | 总5页 (文件大小：122K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
GZF3V6C to GZF91C
VISHAY
Vishay Semiconductors
Zener Diodes
\
Features
• Silicon Planar Power Zener Diodes.
• Low profile surface-mount package.
• Low leakage current
• High temperature soldering:
260 °C/10 sec. at terminals
Mechanical Data
Case: JEDEC DO-219AB (SMF) Plastic Case
Packaging codes/options:
G1/10 K per 13 " reel, (8 mm tape), 50 K/box
G2/3 K per 7 " reel, (8 mm tape), 30 K/box
Weight: approx. 0.01 g
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Value
Unit
mW
Zener current (see Table "Characteristics")
see
page 2
8001)
Power dissipation
TA = 25 °C
Ptot
1) Mounted on epoxy glass PCB with 3 x 3 mm, Cu pads (≥ 40 µm thick)
Maximum Thermal Resistance
Tamb = 25 °C, unless otherwise specified
Parameter
Symbol
RθJA
Value
180
Unit
Thermal resistance junction to
ambient air1)
K/W
Maximum junction temperature
Tj
150
°C
°C
Storage temperature range
TSTG
- 55 to + 150
1) Mounted on epoxy glass PCB with 3 x 3 mm, Cu pads (≥ 40 µm thick)
Document Number 85769
Rev. 3, 21-Feb-03
www.vishay.com
1
GZF3V6C to GZF91C
Vishay Semiconductors
VISHAY
Electrical Characteristics
Maximum VF = 1.2 V at IF = 200 mA
Partnumber
Marking
Code
Zener Voltage
Range1)
Differential
Resistance
Temperature
Coefficient
Test
Current
Reverse Current at
Reverse Voltage
VZ @ IZT
rdif @ IZ
αZ @ IZ
IZT
IR
VR
V
V
Ω
%/°C
mA
µA
max
100
50
25
10
5
min
3.4
3.7
4
max
3.8
4.1
4.6
5
typ
max
8
min
max
-0.04
-0.04
-0.02
0
GZF3V6C
GZF3V9C
GZF4V3C
GZF4V7C
GZF5V1C
GZF5V6C
GZF6V2C
GZF6V8C
GZF7V5C
GZF8V2C
GZF9V1C
GZF10C
GZF11C
GZF12C
GZF13C
GZF15C
GZF16C
GZF18C
GZF20C
GZF22C
GZF24C
GZF27C
GZF30C
GZF33C
GZF36C
GZF39C
GZF43C
GZF47C
GZF51C
GZF56C
GZF62C
GZF68C
GZF75C
GZF82C
GZF91C
W5
W6
W7
W8
W9
WA
WB
WC
WD
WE
WF
WG
WH
WI
4
4
-0.14
-0.14
-0.12
-0.1
100
100
100
100
100
100
100
100
100
100
50
1
1
8
4
7
1
4.4
4.8
5.2
5.8
6.4
7
3
7
1
5.4
6
3
6
-0.08
-0.04
-0.01
0
-0.2
0.04
0.06
0.07
0.07
0.08
0.08
0.09
0.1
1
2
4
10
5
2
6.6
7.2
7.9
8.7
9.6
10.6
11.6
12.7
14.1
15.6
17.1
19.1
21.2
23.3
25.6
28.9
32
2
3
2
1
3
10
50
10
10
7
3
1
2
0
3
7.7
8.5
9.4
10.4
11.4
12.4
13.8
15.3
16.8
18.8
20.8
22.8
25.1
28
1
2
0.03
0.03
0.05
0.05
0.05
0.05
0.05
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.07
0.07
0.07
0.07
0.08
0.08
0.08
0.08
0.09
3
2
4
5
2
4
50
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
4
7
50
4
4
7
0.1
50
3
WK
WL
WM
WN
WO
WP
WR
WS
WT
WU
WW
WX
WY
WZ
X1
5
10
10
15
15
15
15
15
15
15
15
40
40
45
45
60
60
80
80
100
100
200
0.1
50
2
5
0.1
50
1
6
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.12
0.12
0.12
0.12
0.13
0.13
0.13
0.13
0.13
25
1
6
25
1
6
25
1
6
25
1
7
25
1
7
25
1
8
25
1
31
35
8
25
1
34
38
21
21
24
24
25
25
25
25
30
30
60
10
1
37
41
10
1
40
46
10
1
44
50
10
1
48
54
10
1
X2
52
60
10
1
X3
58
66
10
1
X4
64
72
10
1
X5
70
79
10
1
X6
77
87
10
1
X7
85
96
5
1
1) Pulse test: tp ≤ 5 ms
www.vishay.com
2
Document Number 85769
Rev. 3, 21-Feb-03
GZF3V6C to GZF91C
VISHAY
Vishay Semiconductors
Typical Characteristics (T
= 25 °C unless otherwise specified)
amb
mA
3
10
2
10
10
= 100 °C
T
I
J
F
1
= 25 °C
T
J
-1
10
-2
10
-3
10
-4
10
-5
10
0.8
0.2
1V
0.6
F
0
0.4
17364
V
Figure 1. Forward characteristics
mW
800
600
P
tot
400
200
0
200 °C
100
T
17365
amb
Figure 2. Admissible Power Dissipation vs. Ambient Temperature
pF
1000
= 25 °C
T
J
7
5
4
3
V
= 1V
R
V
= 2V
R
2
C
tot
100
7
V
= 1V
R
5
4
3
V
R
= 2V
2
10
1
5
10
5
4
4
2
3
2
3
100 V
17366
V
Z
Figure 3. Capacitance vs. Zener Voltage
Document Number 85769
Rev. 3, 21-Feb-03
www.vishay.com
3
GZF3V6C to GZF91C
Vishay Semiconductors
VISHAY
Package Dimensions in mm
Cathode Band
T op View
1.8 0.1
1.0 0.2
2.8
0.1
5
0.05 - 0.30
0.98 0.1
5
Z
0.60 0.25
Detail
Z
enlarged
0.00 - 0.10
3.7 0.2
17247
Mounting Pad Layout
1.2
1.6
1.2
17248
www.vishay.com
4
Document Number 85769
Rev. 3, 21-Feb-03
GZF3V6C to GZF91C
VISHAY
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 85769
Rev. 3, 21-Feb-03
www.vishay.com
5
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