H11D2-X007 [VISHAY]
Optocoupler, Phototransistor Output, With Base Connection, High BVCER Voltage; 光电耦合器，光电晶体管输出，带底座的连接，高电压BVCER
| 型号： | H11D2-X007 |
| 厂家： | 
VISHAY |
| 描述： | Optocoupler, Phototransistor Output, With Base Connection, High BVCER Voltage |
| 文件： | 总8页 (文件大小：120K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
H11D1/H11D2/H11D3/H11D4
Vishay Semiconductors
Optocoupler, Phototransistor Output,
With Base Connection, High BVCER Voltage
FEATURES
• CTR at IF = 10 mA, BVCER = 10 V: ≥ 20 %
• Good CTR linearly with forward current
• Low CTR degradation
• Very high collector emitter breakdown voltage
- H11D1/H11D2, BVCER = 300 V
- H11D3/H11D4, BVCER = 200 V
1
6
A
C
B
C
E
5
4
2
3
• Isolation test voltage: 5300 VRMS
• Low coupling capacitance
NC
• High common mode transient immunity
• Package with base connection
• Lead (Pb)-free component
i179004
i179004
• Component in accordance to RoHS 2002/95/EC and
WEEE 2002/96/EC
DESCRIPTION
AGENCY APPROVALS
The H11D1/H11D2/H11D3/H11D4 are optocouplers with
very high BVCER. They are intended for telecommunications
applications or any DC application requiring a high blocking
voltage.
The H11D1/H11D2 are identical and the H11D3/H11D4 are
identical.
• UL1577, file no. E52744 system code H or J, double
protection
• DIN EN 60747-5-2 (VDE0884)
DIN EN 60747-5-5 pending
available with option 1
• BSI IEC60950 IEC60065
• FIMKO
APPLICATIONS
• Telecommunications
• Replace relays
ORDER INFORMATION
PART
REMARKS
H11D1
CTR > 20 %, DIP-6
H11D2
CTR > 20 %, DIP-6
H11D3
CTR > 20 %, DIP-6
H11D4
CTR > 20 %, DIP-6
H11D1-X007
H11D1-X009
H11D2-X007
H11D3-X007
CTR > 20 %, SMD-6 (option 7)
CTR > 20 %, SMD-6 (option 9)
CTR > 20 %, SMD-6 (option 7)
CTR > 20 %, SMD-6 (option 7)
Note
For additional information on the available options refer to option information.
Document Number: 83611
Rev. 1.5, 19-Nov-07
For technical questions, contact: optocouplers.answers@vishay.com
www.vishay.com
1
H11D1/H11D2/H11D3/H11D4
Optocoupler, Phototransistor Output,
With Base Connection, High BVCER Voltage
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
TEST CONDITION
PART
SYMBOL
VALUE
UNIT
INPUT
Reverse voltage
VR
IF
6
V
mA
A
DC forward current
Surge forward current
Power dissipation
OUTPUT
60
t ≤ 10 µs
IFSM
Pdiss
2.5
100
mW
H11D1
H11D2
H11D3
H11D4
H11D1
H11D2
H11D3
H11D4
VCE
VCE
300
300
200
200
300
300
200
200
7
V
V
Collector emitter voltage
Collector base voltage
VCE
V
VCE
V
VCBO
VCBO
VCBO
VCBO
VBEO
IC
V
V
V
V
Emitter base voltage
Collector current
Power dissipation
COUPLER
V
100
300
mA
mW
Pdiss
between emitter and detector,
refer to climate DIN 50014, part 2,
Nov. 74
Isolation test voltage
VISO
5300
VRMS
mm
Insulation thickness between emitter
and detector
≥ 0.4
Creepage distance
≥ 7
≥ 7
mm
mm
Clearance distance
Comparative tracking index
per DIN IEC 112/VDE 0303, part 1
175
V
IO = 500 V, Tamb = 25 °C
RIO
RIO
Tstg
Tamb
Tj
≥ 1012
≥ 1011
Ω
Ω
Isolation resistance
V
IO = 500 V, Tamb = 100 °C
Storage temperature range
Operating temperature range
Junction temperature
- 55 to + 150
- 55 to + 100
100
°C
°C
°C
max. 10 s, dip soldering: distance
Soldering temperature
Tsld
260
°C
to seating plane ≥ 1.5 mm
Note
Tamb = 25 °C, unless otherwise specified.
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum
Rating for extended periods of the time can adversely affect reliability.
www.vishay.com
2
For technical questions, contact: optocouplers.answers@vishay.com
Document Number: 83611
Rev. 1.5, 19-Nov-07
H11D1/H11D2/H11D3/H11D4
Optocoupler, Phototransistor Output,
With Base Connection, High BVCER Voltage
Vishay Semiconductors
ELECTRICAL CHARACTERISTCS
PARAMETER
INPUT
TEST CONDITION
PART
SYMBOL
MIN.
TYP.
MAX.
1.5
UNIT
Forward voltage
Reverse voltage
Reverse current
Capacitance
IF = 10 mA
VF
VR
1.1
V
V
I
R = 10 µA
R = 6 V
R = 0 V, f = 1 MHz
6
V
IR
0.01
25
10
µA
pF
K/W
V
CO
Thermal resistance
OUTPUT
RthJA
750
H11D1
H11D2
H11D3
H11D4
BVCER
BVCER
BVCER
BVCER
BVEBO
CCE
300
300
200
200
7
V
V
Collector emitter breakdown voltage
ICE = 1 mA, RBE = 1 MΩ
V
V
Emitter base breakdown voltage
Collector emitter capacitance
Collector base capacitance
Emitter base capacitance
Thermal resistance
I
EB = 100 µA
V
V
CE = 10 V, f = 1 MHz
CB = 10 V, f = 1 MHz
7
8
pF
pF
pF
K/W
V
CCB
VEB = 5 V, f = 1 MHz
CEB
38
250
Rth
COUPLER
Coupling capacitance
CC
0.6
pF
%
IF = 10 mA, VCE = 10 V,
BE = 1 MΩ
Current transfer ratio
IC/IF
20
R
Collector emitter,
saturation voltage
IF = 10 mA, IC = 0.5 mA,
BE = 1 MΩ
VCEsat
0.25
0.4
V
R
H11D1
H11D2
H11D1
H11D2
ICER
ICER
ICER
ICER
100
100
250
250
nA
nA
µA
µA
VCE = 200 V, RBE = 1 MΩ
Collector emitter, leakage current
VCE = 300 V, RBE = 1 MΩ,
T
amb = 100 °C
Note
Tamb = 25 °C, unless otherwise specified.
Minimum and maximum values were tested requierements. Typical values are characteristics of the device and are the result of engineering
evaluations. Typical values are for information only and are not part of the testing requirements.
CURRENT TRANSFER RATIO
PARAMETER
TEST CONDITION
PART
SYMBOL
MIN.
TYP.
MAX.
UNIT
IF = 10 mA, VCE = 10 V,
Current transfer ratio
CTR
20
%
R
BE = 1 MΩ
SWITCHING CHARACTERISTICS
PARAMETER
TEST CONDITION
SYMBOL
ton
MIN.
TYP.
MAX.
UNIT
IC = 2 mA (to be adjusted by varying IF),
Turn-on time
5
µs
RL = 100 Ω, VCC = 10 V
IC = 2 mA (to be adjusted by varying IF),
Rise time
Turn-off time
Fall time
tr
toff
tf
2.5
6
µs
µs
µs
RL = 100 Ω, VCC = 10 V
IC = 2 mA (to be adjusted by varying IF),
RL = 100 Ω, VCC = 10 V
IC = 2 mA (to be adjusted by varying IF),
5.5
RL = 100 Ω, VCC = 10 V
Note
Switching times measurement-test circuit and waveforms
Document Number: 83611
Rev. 1.5, 19-Nov-07
For technical questions, contact: optocouplers.answers@vishay.com
www.vishay.com
3
H11D1/H11D2/H11D3/H11D4
Optocoupler, Phototransistor Output,
With Base Connection, High BVCER Voltage
Vishay Semiconductors
TYPICAL CHARACTERISTICS
Tamb = 25 °C, unless otherwise specified
1.2
1.0
0.8
0.6
30
25
20
15
10
5
ICE = f (VCE, IF)
IF =100 µA
IF = 80 µA
IF = 60 µA
IF = 40 µA
0.4
VCE = 10 V,
normalized to IF = 10 mA,
NCTR = f (IF)
0.2
0
IF = 20 µA
0
10-4
10-3
10-2
10-1
10-2
10-1
100
101
102
VCE (V)
IF (A)
ih11d1_05
ih11d1_02
Fig. 1 - Current Transfer Ratio (typ.)
Fig. 4 - Output Characteristics
1.2
1.1
1.0
100
90
80
70
60
50
40
30
20
10
0
f = 1 MHz,
CCE = f (VCE
CCB = f (VCB), CEB = f (VEB
VF = f (IF, TA)
25 °C
)
)
50 °C
75 °C
CEB
CCB
CCE
0.9
10-1
100
101
102
10-2
10-1
100
101
102
IF (mA)
VXX (V)
ih11d1_03
ih11d1_06
Fig. 2 - Diode Forward Voltage (typ.)
Fig. 5 - Transistor Capacitances (typ.)
10-6
20
17.5
15
ICE = f (VCE, IB)
IF = 0, RBE = 1 MΩ
ICER = f (VCE
)
10-7
10-8
IB =100 µA
IB = 80 µA
IB = 60 µA
12.5
10
10-9
7.5
5
10-10
10-11
10-12
IB = 40 µA
IB = 20 µA
2.5
0
10-2
10-1
100
101
102
0
25 50 75 100 125 150 175 200
VCE (V)
VCE (V)
ih11d1_07
ih11d1_04
Fig. 3 - Output Characteristics
Fig. 6 - Collector Emitter Leakage Current (typ.)
www.vishay.com
4
For technical questions, contact: optocouplers.answers@vishay.com
Document Number: 83611
Rev. 1.5, 19-Nov-07
H11D1/H11D2/H11D3/H11D4
Optocoupler, Phototransistor Output,
With Base Connection, High BVCER Voltage
Vishay Semiconductors
100
90
80
70
60
50
40
30
20
10
0
400
IF = f (TA)
Ptot = f (TA)
350
300
250
200
150
100
50
transistor
diode
0
0
10 20 30 40 50 60 70 80 90 100
0
10 20 30 40 50 60 70 80 90 100
TA (°C)
TA (°C)
ih11d1_08
ih11d1_09
Fig. 7 - Permissible Loss Diode
Fig. 8 - Permissible Power Dissipation
Input
0
toff
ton
IF
tpdon
tpdoff
RL
VCC
tr
tr
td
IC
Output
ts
0
VO
10 %
50 %
90 %
10 %
50 %
90 %
47 Ω
GND
ih11d1_01
Fig. 9 Switching Times Measurement-Test Circuit and Waveform
Document Number: 83611
Rev. 1.5, 19-Nov-07
For technical questions, contact: optocouplers.answers@vishay.com
www.vishay.com
5
H11D1/H11D2/H11D3/H11D4
Optocoupler, Phototransistor Output,
With Base Connection, High BVCER Voltage
Vishay Semiconductors
PACKAGE DIMENSIONS in inches (millimeters)
Pin oneID
2
1
3
0.248 (6.30)
0.256 (6.50)
ISO Method A
4
5
6
0.335 (8.50)
0.343 (8.70)
0.300 (7.62)
typ.
(0.45)
0.048
0.022 (0.55)
0.039
(1.00)
min.
0.130 (3.30)
0.150 (3.81)
18°
4°
0.114 (2.90)
0.130 (3.0)
typ.
0.031 (0.80) min.
3°to 9°
0.010 (0.25)
typ.
0.031 (0.80)
0.035 (0.90)
0.018 (0.45)
0.022 (0.55)
0.300 – 0.347
(7.62– 8.81)
0.100 (2.54) typ.
i178004
Option 7
Option 9
0.375 (9.53)
0.395 (10.03)
0.300 (7.62)
typ.
0.300 (7.62)
ref.
0.028 (0.7)
0.180 (4.6)
0.160 (4.1)
min.
0.0040 (0.102)
0.0098 (0.249)
0.012 (0.30) typ.
0.315 (8.0)
min.
0.020 (0.51)
0.040 (1.02)
0.331 (8.4)
15° max.
min.
0.315 (8.00)
min.
0.406 (10.3)
max.
18494
www.vishay.com
6
For technical questions, contact: optocouplers.answers@vishay.com
Document Number: 83611
Rev. 1.5, 19-Nov-07
H11D1/H11D2/H11D3/H11D4
Optocoupler, Phototransistor Output,
With Base Connection, High BVCER Voltage
Vishay Semiconductors
OZONE DEPLETING SUBSTANCES POLICY STATEMENT
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with
respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone
depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use
within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in
the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively.
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency
(EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do
not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application by the
customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall
indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any
claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Document Number: 83611
Rev. 1.5, 19-Nov-07
For technical questions, contact: optocouplers.answers@vishay.com
www.vishay.com
7
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
www.vishay.com
1
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