HFA04SD60TRPBF [VISHAY]

Rectifier Diode, 1 Phase, 1 Element, 4A, 600V V(RRM), Silicon, ROHS COMPLIANT, DPAK-3;


型号：	HFA04SD60TRPBF
厂家：	VISHAY
描述：	Rectifier Diode, 1 Phase, 1 Element, 4A, 600V V(RRM), Silicon, ROHS COMPLIANT, DPAK-3 超软恢复二极管高功率电源
文件：	总7页 (文件大小：120K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

HFA04SD60SPbF

Vishay High Power Products

HEXFRED^®

Ultrafast Soft Recovery Diode, 4 A

FEATURES

• Ultrafast recovery time

• Ultrasoft recovery

• Very low I_RRM

Available

RoHS*

COMPLIANT

• Very low Q_rr

• Guaranteed avalanche

• Specified at operating temperature

• Lead (Pb)-free

N/C

• Designed and qualified for Q101 level

D-PAK

Anode

BENEFITS

• Reduced RFI and EMI

• Reduced power loss in diode and switching transistor

• Higher frequency operation

• Reduced snubbing

PRODUCT SUMMARY

• Reduced parts count

V_R

V_Fat 4 A at 25 °C

I_F(AV)

600 V

1.8 V

4 A

DESCRIPTION/APPLICATIONS

These diodes are optimized to reduce losses and EMI/RFI

in high frequency power conditioning systems. The softness

of the recovery eliminates the need for a snubber in

most applications. These devices are ideally suited for

freewheeling, flyback, power converters, motor drives, and

other applications where high speed and reduced switching

losses are design requirements.

_rr(typical)

17 ns

150 °C

T_J(maximum)

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

V_RRM

I_F(AV)

I_FSM

TEST CONDITIONS

VALUES

UNITS

Cathode to anode voltage

600

Maximum continuous forward current

Single pulse forward current

T_C= 100 °C

Repetitive peak forward current

Maximum power dissipation

I_FRM

T_C= 116 °C

T_C= 100 °C

P_D

Operating junction and storage temperatures

T_J, T_Stg

- 55 to 150

°C

ELECTRICAL SPECIFICATIONS (T_J= 25 °C unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNITS

Breakdown voltage,

blocking voltage

V_BR

V_R

I_R= 100 µA

600

I_F= 4 A

I_F= 8 A

1.5

1.8

1.4

0.17

1.8

2.2

1.7

3.0

300

Forward voltage

See fig. 1

V_F

I_F= 4 A, T_J= 125 °C

V_R= V_Rrated

Maximum reverse

leakage current

I_R

µA

T_J= 125 °C, V_R= 0.8 x V_Rrated

V_R= 200 V

Junction capacitance

Series inductance

C_T

L_S

Measured lead to lead 5 mm from package body

8.0

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 94034

Revision: 29-Jul-08

For technical questions, contact: diodes-tech@vishay.com

www.vishay.com

HFA04SD60SPbF

Vishay High Power Products

HEXFRED^®

Ultrafast Soft Recovery Diode, 4 A

DYNAMIC RECOVERY CHARACTERISTICS (T_C= 25 °C unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

I_F= 1.0 A, dI_F/dt = 200 A/µA, V_R= 30 V

T_J= 25 °C

MIN.

TYP.

MAX.

UNITS

Reverse recovery time

t_rr

5.2

6.7

105

T_J= 125 °C

T_J= 25 °C

2.9

3.7

Peak recovery current

I_RRM

I_F= 4 A

T_J= 125 °C

dI_F/dt = 200 A/µs

T_J= 25 °C

_R= 200 V

Reverse recovery charge

Q_rr

T_J= 125 °C

T_J= 25 °C

T_J= 125 °C

280

235

Rate of fall of recovery current dI_(rec)M/dt

A/µs

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER

SYMBOL

T_J, T_Stg

T_S

TEST CONDITIONS

MIN.

TYP.

MAX.

150

240

5.0

UNITS

Maximum junction and

storage temperature range

- 55

°C

Soldering temperature

10 s

Thermal resistance,

junction to case

R_thJC

°C/W

Thermal resistance,

junction to ambient

R_thJA

Typical socket mount

2.0

Weight

0.07

oz.

6.0

(5.0)

(10)

kgf · cm

(lbf ⋅ in)

Mounting torque

Marking device

Case style D-PAK

HFA04SD60S

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For technical questions, contact: diodes-tech@vishay.com

Document Number: 94034

Revision: 29-Jul-08

HFA04SD60SPbF

Vishay High Power Products

HEXFRED^®

Ultrafast Soft Recovery Diode, 4 A

100

1000

100

T_J= 150 °C

T_J= 125 °C

T_J= 175 °C

T_J= 125 °C

T_J= 25 °C

0.1

0.01

0.1

0.001

100

200

300

400

500

V_R- Reverse Voltage (V)

V_F- Forward Voltage Drop (V)

Fig. 1 - Typical Forward Voltage Drop Characteristics

Fig. 2 - Typical Values of Reverse Current vs.

Reverse Voltage

100

T_J= 25 °C

100

1000

V_R- Reverse Voltage (V)

Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage

P_DM

t₁

D = 0.50

D = 0.20

D = 0.10

0.1

t₂

Single pulse

D = 0.05

D = 0.02

D = 0.01

(thermal resistance)

Notes:

1. Duty factor D = t₁/t₂

2. Peak T_J= P_DMx Z_thJC+ T_C

0.01

0.00001

0.0001

0.001

0.01

0.1

t₁- Rectangular Pulse Duration (s)

Fig. 4 - Maximum Thermal Impedance Z_thJCCharacteristics

Document Number: 94034

Revision: 29-Jul-08

For technical questions, contact: diodes-tech@vishay.com

www.vishay.com

HFA04SD60SPbF

Vishay High Power Products

HEXFRED^®

Ultrafast Soft Recovery Diode, 4 A

200

V_R= 200 V

180

160

140

120

100

T_J= 125 °C

T_J= 25 °C

I_F= 8 A

I_F= 4 A

I_F= 8 A

I_F= 4 A

V_R= 200 V

T_J= 125 °C

T_J= 25 °C

100

1000

dI_F/dt (A/µs)

Fig. 5 - Typical Reverse Recovery Time vs. dI_F/dt

dI_F/dt (A/µs)

Fig. 7 - Typical Stored Charge vs. dI_F/dt

1000

I_F= 8 A

I_F= 4 A

I_F= 8 A

I_F= 4 A

V_R= 200 V

T_J= 125 °C

T_J= 25 °C

V_R= 200 V

T_J= 125 °C

T_J= 25 °C

100

1000

dI_F/dt (A/µs)

Fig. 6 - Typical Recovery Current vs. dI_F/dt

dI_F/dt (A/µs)

Fig. 8 - Typical dI_(rec)M/dt vs. dI_F/dt

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For technical questions, contact: diodes-tech@vishay.com

Document Number: 94034

Revision: 29-Jul-08

HFA04SD60SPbF

Vishay High Power Products

HEXFRED^®

Ultrafast Soft Recovery Diode, 4 A

_R= 200 V

0.01 Ω

L = 70 µH

D.U.T.

dI_F/dt

adjust

IRFP250

Fig. 9 - Reverse Recovery Parameter Test Circuit

(3)

t_rr

I_F

t_a

t_b

(4)

Q_rr

(2)

I_RRM

0.5 I_RRM

(5)

dI_(rec)M/dt

0.75 I_RRM

dI_F/dt

(1)

(4) Q_rr- area under curve defined by t_rr

(1) dI_F/dt - rate of change of current

through zero crossing

and I_RRM

t_rrx I_RRM

(2) I_RRM- peak reverse recovery current

Q_rr

(3) t_rr- reverse recovery time measured

from zero crossing point of negative

going I_Fto point where a line passing

through 0.75 I_RRMand 0.50 I_RRM

extrapolated to zero current.

(5) dI_(rec)M/dt - peak rate of change of

current during t_bportion of t_rr

Fig. 10 - Reverse Recovery Waveform and Definitions

Document Number: 94034

Revision: 29-Jul-08

For technical questions, contact: diodes-tech@vishay.com

www.vishay.com

HFA04SD60SPbF

Vishay High Power Products

HEXFRED^®

Ultrafast Soft Recovery Diode, 4 A

ORDERING INFORMATION TABLE

Device code

HFA

PbF

- HEXFRED^®family

- Electron irradiated

- Current rating (04 = 4 A)

- D-PAK

S = D²PAK/D-PAK

TR = Tape and reel

TRL = Tape and reel left

TRR = Tape and reel right

- Voltage rating (60 = 600 V)

- Suffix

None = Standard production

PbF = Lead (Pb)-free

LINKS TO RELATED DOCUMENTS

Dimensions

http://www.vishay.com/doc?95016

http://www.vishay.com/doc?95059

http://www.vishay.com/doc?95033

Part marking information

Packaging information

www.vishay.com

For technical questions, contact: diodes-tech@vishay.com

Document Number: 94034

Revision: 29-Jul-08

Legal Disclaimer Notice

Vishay

Disclaimer

All product specifications and data are subject to change without notice.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf

(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein

or in any other disclosure relating to any product.

Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any

information provided herein to the maximum extent permitted by law. The product specifications do not expand or

otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed

therein, which apply to these products.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this

document or by any conduct of Vishay.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless

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applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting

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Product names and markings noted herein may be trademarks of their respective owners.

Document Number: 91000

Revision: 18-Jul-08

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