ILD252-X009 [VISHAY]
Optocoupler, Phototransistor Output, AC Input, With Base Connection; 光电耦合器，光电晶体管输出， AC输入，具有基本连接
| 型号： | ILD252-X009 |
| 厂家： | 
VISHAY |
| 描述： | Optocoupler, Phototransistor Output, AC Input, With Base Connection |
| 文件： | 总8页 (文件大小：216K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IL250/ 251/ 252/ ILD250/ 251/ 252
VISHAY
Vishay Semiconductors
Optocoupler, Phototransistor Output, AC Input, With Base
Connection
Single Channel
Features
A/C
C/A
NC
B
C
E
6
5
4
1
2
3
• AC or Polarity Insensitive Input
• Built-in Reverse Polarity Input Protection
• Improved CTR Symmetry
• Industry Standard DIP Package
Dual Channel
1
8
7
6
5
E
A
C
A
C
Agency Approvals
• UL File #E52744 System Code H or J
• CSA 93751
2
3
4
C
C
E
• BSI IEC60950 IEC60965
i179024
• DIN EN 60747-5-2(VDE0884)
DIN EN 60747-5-5 pending
Available with Option 1
Order Information
Part
Remarks
IL250
CTR > 50 %, Single Channel DIP-6
IL251
CTR > 20 %, Single Channel DIP-6
Applications
Ideal for AC signal detection and monitoring.
IL252
CTR > 100 %, Single Channel DIP-6
ILD250
CTR > 50 %, Dual Channel DIP-8
ILD251
CTR > 20 %, Dual Channel DIP-8
Description
ILD252
CTR > 100 %, Dual Channel DIP-8
The IL250/ 251/ 252/ ILD250/ 251/ 252 are bidirec-
tional input optically coupled isolators consisting of
two Gallium Arsenide infrared LEDs coupled to a sili-
con NPN phototransistor per channel.
IL250-X007
IL250-X009
IL251-X009
IL252-X007
IL252-X009
CTR > 50 %, Single Channel SMD-6 (option 7)
CTR > 50 %, Single Channel SMD-6 (option 9)
CTR > 20 %, Single Channel SMD-6 (option 9)
CTR > 100 %, Single Channel SMD-6 (option 7)
CTR > 100 %, Single Channel SMD-6 (option 9)
The IL250/ ILD/250 has a minimum CTR of 50 %,
the IL251/ ILD251 has a minimum CTR of 20 %,
and the IL252/ ILD252 has a minimum CTR of 100 %.
ILD250-X009 CTR > 50 %, Dual Channel SMD-6 (option 9)
The IL250/ IL251/ IL252 are single channel optocou-
plers. The ILD250/ ILD251/ ILD252 has two isolated
channels in a single DIP package.
ILD251-X006 CTR > 20 %, Dual Channel DIP-8 400 mil (option
6)
ILD251-X007 CTR > 20 %, Dual Channel SMD-6 (option 7)
ILD251-X009 CTR > 20 %, Dual Channel SMD-6 (option 9)
ILD252-X009 CTR > 100 %, Dual Channel SMD-6 (option 9)
For additional information on the available options refer to
Option Information.
Document Number 83618
Rev. 1.3, 20-Apr-04
www.vishay.com
1
IL250/ 251/ 252/ ILD250/ 251/ 252
Vishay Semiconductors
VISHAY
Absolute Maximum Ratings
T
= 25 °C, unless otherwise specified
amb
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Parameter
Test condition
Symbol
Value
60
Unit
mA
Forward continuous current
I
F
Power dissipation
P
100
mW
diss
Derate linearly from 25 °C
1.33
mw/°C
Output
Parameter
Test condition
Symbol
Value
30
Unit
V
Collector-emitter breakdown voltage
BV
BV
BV
CEO
EBO
CBO
diss
Emitter-base breakdown voltage
Collector-base breakdown voltage
Power dissipation single channel
Power dissipation dual channel
5.0
70
V
V
P
P
200
150
mW
mW
diss
Derate linearly from 25 °C single channel
Derate linearly from 25 °C dual channel
2.6
2.0
mW/°C
mW/°C
Coupler
Parameter
Test condition
Symbol
Value
5300
Unit
Isolation test voltage (between
emitter and detector referred to
standard climate
V
V
RMS
ISO
23 °C/50 %RH, DIN 50014)
Creepage
Clearance
≥ 7.0
≥ 7.0
mm
mm
Ω
12
Isolation resistance
V
V
= 500 V, T
= 25 °C
R
IO
IO
amb
IO
IO
tot
tot
10
11
= 500 V, T
= 100 °C
R
Ω
mW
amb
10
Total dissipation single channel
Total dissipation dual channel
P
P
250
400
3.3
mW
Derate linearly from 25 °C single
channel
mW/°C
Derate linearly from 25 °C dual
channel
5.3
mW/°C
Storage temperature
T
- 55 to + 150
- 55 to + 100
10
°C
°C
stg
Operating temperature
Lead soldering time at 260 °C
T
amb
sec.
www.vishay.com
2
Document Number 83618
Rev. 1.3, 20-Apr-04
IL250/ 251/ 252/ ILD250/ 251/ 252
VISHAY
Vishay Semiconductors
Electrical Characteristics
T
= 25 °C, unless otherwise specified
amb
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Parameter
Test condition
I = 10 mA
Symbol
Min
Typ.
1.2
Max
1.5
Unit
V
Forward voltage
V
F
F
Output
Parameter
Test condition
= 1.0 mA
Symbol
Min
30
Typ.
50
Max
50
Unit
V
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector-base breakdown voltage
Collector-emitter leakage current
I
I
I
BV
BV
BV
C
E
C
CEO
EBO
CBO
= 100 µA
= 10 µA
7.0
70
10
90
V
V
V
= 10 V
I
5.0
nA
CE
CEO
Coupler
Parameter
Test condition
Symbol
Min
Typ.
Max
0.4
Unit
V
Collector-emitter saturation
voltage
I = 16 mA, I = 2.0 mA
V
CEsat
F
C
Current Transfer Ratio
Parameter
Test condition
Part
Symbol
Min
50
Typ.
1.0
Max
Unit
%
DC Current Transfer Ratio
I = 10 mA, V = 10 V
ILD250
CTR
CTR
CTR
F
CE
DC
DC
DC
ILD251
ILD252
20
%
%
100
0.50
Symmetry (CTR @ + 10 mA)/
(CTR @ -10 mA)
2.0
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
60
40
20
1.5
Normalized to:
= 10 V, I = 10 mA
V
CE
F
-55°C
T = 25°C
A
1.0
CTRce(sat) V
= 0.4 V
CE
25°C
0
-20
-40
-60
85°C
0.5
0.0
NCTR(SAT)
NCTR
-1.5
-1.0
-0.5
0.0
0.5
1.0
1.5
.1
1
10
100
V
- LED Forward Voltage - V
F
I
- LED Current - mA
F
iil250_01
iil250_02
Fig. 1 LED Forward Current vs.Forward Voltage
Fig. 2 Normalized Non-Saturated and Saturated CTR vs. LED
Current
Document Number 83618
Rev. 1.3, 20-Apr-04
www.vishay.com
3
IL250/ 251/ 252/ ILD250/ 251/ 252
Vishay Semiconductors
VISHAY
1.5
1.0
0.5
0.0
35
30
25
Normalized to:
V
= 10 V, I = 10 mA, T = 25°C
ˇ
CE
CTRce(sat) V
F
A
= 0.4 V
CE
50°C
T = 50°C
A
20
15
70°C
25°C
85°C
10
NCTR(SAT)
NCTR
5
0
.1
1
10
100
0
10
20
30
40
50
60
I
- LED Current - mA
F
I
- LED Current - mA
F
iil250_03
iil250_06
Fig. 3 Normalized Non-saturated and Saturated CTR vs. LED
Current
Fig. 6 Collector-Emitter Current vs. Temperature and LED
Current
1.5
5
10
Normalized to:
4
V
= 10 V, I = 10 mA
10
CE
F
T = 25°C
A
3
10
1.0
0.5
0.0
CTRce(sat) V
= 0.4 V
CE
2
10
T = 70°C
A
V
= 10 V
CE
1
10
10
10
10
TYPICAL
0
NCTR(SAT)
NCTR
-1
-2
.1
1
10
100
-20
0
20
40
60
80
100
I
- LED Current - mA
F
T
- Ambient Temperature - °C
iil250_04
iil250_07
A
Fig. 4 Normalized Non-saturated and saturated CTR vs. LED
Current
Fig. 7 Collector-Emitter Leakage Current vs.Temp.
1.5
1.5
Normalized to:
Normalized to:
V
= 10 V I = 10 mA,
T = 25°C
A
,
CE
CTRce(sat) V
F
I
=10 mA
F
= 0.4 V
CE
V
T
= 9.3 V
CB
= 25°C
1.0
0.5
0.0
1.0
T
= 85°C
A
A
0.5
0.0
25°C
50°C
70°C
NCTR(SAT)
NCTR
.1
1
10
100
I
- LED Current - mA
F
.1
1
10
100
I - LED Current - mA
F
iil250_05
iil250_08
Fig. 5 Normalized Non-saturated and saturated CTR vs. LED
Current
Fig. 8 Normalized CTR vs. LED Current and Temperature
cb
www.vishay.com
4
Document Number 83618
Rev. 1.3, 20-Apr-04
IL250/ 251/ 252/ ILD250/ 251/ 252
VISHAY
Vishay Semiconductors
1000
1.5
70°C
50°C
25°C
-20°C
Normalized to:
T
I
= 25°C
A
V
I
= 10 V
CE
100
= 1.0357 *IF ^1.3631
= 20 µA
CB
B
1.0
0.5
0.0
T
= 25°C
A
10
1
.1
V
= 0.4 V
CE
.01
.1
100
1
10
1
10
100
1000
IF - LED Current - mA
I
- Base Current - (µA)
iil250_09
B
iil250_12
Fig. 9 Collector-Base Photocurrent vs. LED Current
Fig. 12Normalized Saturated HFE vs. Base Current and
Temperature
2.5
10
1000
Normalized to:
T
V
= 25°C, I = 10 mA
F
CC
A
= 5 V, Vth = 1.5 V
I
= 10 mA, T = 25°C
F
tpHL
100
2.0
1
.1
NIB-T = -20°C
10
1
1.5
1.0
A
NIb, T = 25°C
A
tpLH
NIb, T = 50°C
A
NIb, T = 70°C
A
.01
.1
1
10
100
.1
1
10
100
R
- Collector Load Resistor - kΩ
L
iil250_10
iil250_13
I
- LED Current - mA
F
Fig. 10Normalized Photocurrent vs. I and Temp.
Fig. 13Propagation Delay vs. Collector Load Resistor
F
1.2
70°C
50°C
25°C
-20°C
Normalized to:
I
= 20 µA
B
I
F
1.0
0.8
V
T
= 10 V
CE
= 25°C
A
t
R
D
t
V
O
t
PLH
0.6
0.4
V
= 1.5 V
TH
t
t
t
S
F
PHL
1000
1
10
100
I
- Base Current - µA
B
iil250_11
iil250_14
Fig. 11Normalized Non-saturated HFE vs. Base Current and
Temperature
Fig. 14Switching Timing
Document Number 83618
Rev. 1.3, 20-Apr-04
www.vishay.com
5
IL250/ 251/ 252/ ILD250/ 251/ 252
Vishay Semiconductors
VISHAY
V
= 5 V
CC
F=10 KHz,
DF=50%
R
L
V
O
I
=10 mA
F
iil250_15
Fig. 15Switching Schematic
Package Dimensions in Inches (mm)
pin one ID
2
1
3
.248 (6.30)
.256 (6.50)
ISO Method A
4
5
6
.335 (8.50)
.343 (8.70)
.300 (7.62)
typ.
.048 (0.45)
.022 (0.55)
.039
(1.00)
Min.
.130 (3.30)
.150 (3.81)
18°
4°
.114 (2.90)
.130 (3.0)
typ.
.031 (0.80) min.
3°–9°
.010 (.25)
typ.
.031 (0.80)
.035 (0.90)
.018 (0.45)
.022 (0.55)
.300–.347
(7.62–8.81)
.100 (2.54) typ.
i178004
www.vishay.com
6
Document Number 83618
Rev. 1.3, 20-Apr-04
IL250/ 251/ 252/ ILD250/ 251/ 252
VISHAY
Vishay Semiconductors
Package Dimensions in Inches (mm)
pin one ID
4
5
3
6
1
8
2
7
.255 (6.48)
.268 (6.81)
ISO Method A
.379 (9.63)
.390 (9.91)
.030 (0.76)
.045 (1.14)
.300 (7.62)
.031 (0.79)
typ.
4° typ.
.130 (3.30)
.150 (3.81)
.230(5.84)
.250(6.35)
.050 (1.27)
10°
.110 (2.79)
.130 (3.30)
.020 (.51 )
.035 (.89 )
3°–9°
.008 (.20)
.012 (.30)
.018 (.46)
.022 (.56)
.100 (2.54) typ.
i178006
Option 7
Option 6
Option 9
.300 (7.62)
TYP.
.407 (10.36)
.391 (9.96)
.375 (9.53)
.395 (10.03)
.307 (7.8)
.291 (7.4)
.300 (7.62)
ref.
.028 (0.7)
MIN.
.180 (4.6)
.160 (4.1)
.0040 (.102)
.0098 (.249)
.012 (.30) typ.
.315 (8.0)
MIN.
.020 (.51)
.040 (1.02)
.014 (0.35)
.010 (0.25)
.400 (10.16)
.430 (10.92)
.331 (8.4)
MIN.
15° max.
.315 (8.00)
min.
.406 (10.3)
MAX.
18450
Document Number 83618
Rev. 1.3, 20-Apr-04
www.vishay.com
7
IL250/ 251/ 252/ ILD250/ 251/ 252
Vishay Semiconductors
VISHAY
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
www.vishay.com
8
Document Number 83618
Rev. 1.3, 20-Apr-04
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