ILQ32 [VISHAY]

Optocoupler, Photodarlington Output, High Gain (Dual, Quad Channel); 光电耦合器,光电复合输出,高增益(双通道,四通道)
ILQ32
型号: ILQ32
厂家: VISHAY    VISHAY
描述:

Optocoupler, Photodarlington Output, High Gain (Dual, Quad Channel)
光电耦合器,光电复合输出,高增益(双通道,四通道)

光电
文件: 总8页 (文件大小:181K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
ILD32/ ILQ32  
Vishay Semiconductors  
Optocoupler, Photodarlington Output, High Gain (Dual, Quad  
Channel)  
Features  
• Isolation Test Voltage, 5300 V  
• High Isolation Resistance, 10 Typical  
• Low Coupling Capacitance  
A
1
2
8
7
E
C
C
E
C
RMS  
11  
C
A
6
5
3
4
• Standard Plastic DIP Package  
• Lead-free component  
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
A
16  
E
1
C
C
C
C
2
3
15  
14  
Agency Approvals  
• UL1577, File No. E52744 System Code H or J,  
Double Protection  
• DIN EN 60747-5-2 (VDE0884)  
DIN EN 60747-5-5 pending  
Available with Option 1  
A
A
C
C
A
4
5
13  
12  
E
E
6
7
11  
10  
C
C
8
9
E
i179017  
Pb  
e3  
Pb-free  
Description  
Order Information  
The ILD32/ ILQ32 are optically coupled isolators with  
a gallium arsenide infrared LED and a silicon photo-  
darlington sensor. Switching can be achieved while  
maintaining a high degree of isolation between driving  
and load circuits.  
These optocouplers can be used to replace reed and  
mercury relays with advantages of long life, high  
speed switching and elimination of magnetic fields.  
Part  
Remarks  
ILD32  
CTR > 500 %, DIP-8  
CTR > 500 %, DIP-16  
ILQ32  
ILD32-X006  
ILD32-X007  
ILD32-X009  
ILQ32-X007  
ILQ32-X009  
CTR > 500 %, DIP-8 400 mil (option 6)  
CTR > 500 %, SMD-8 (option 7)  
CTR > 500 %, SMD-8 (option 9)  
CTR > 500 %, SMD-8 (option 7)  
CTR > 500 %, SMD-8 (option 9)  
For additional information on the available options refer to  
Option Information.  
Absolute Maximum Ratings  
Tamb = 25 °C, unless otherwise specified  
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is  
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute  
Maximum Rating for extended periods of the time can adversely affect reliability.  
Input  
Parameter  
Test condition  
Symbol  
VR  
Value  
3.0  
Unit  
V
Peak reverse voltage  
Forward continuous current  
Power dissipation  
IF  
60  
mA  
mW  
Pdiss  
100  
1.33  
Derate linearly from 25°C  
mW/°C  
Document Number 83650  
Rev. 1.5, 26-Oct-04  
www.vishay.com  
1
ILD32/ ILQ32  
Vishay Semiconductors  
Output  
Parameter  
Test condition  
Symbol  
BVCEO  
Value  
30  
Unit  
V
Collector-emitter breakdown  
voltage  
Collector (load) current  
Power dissipation  
IC  
125  
150  
2.0  
mA  
mW  
Pdiss  
Derate linearly from 25°C  
mW/°C  
Coupler  
Parameter  
Test condition  
Part  
Symbol  
VISO  
Value  
5300  
Unit  
Isolation test voltage 1)  
Creepage  
t = 1.0 sec.  
VRMS  
7  
7  
mm  
mm  
Clearance  
Comparative tracking index per  
DIN IEC 112/VDE303, part 1  
175  
1012  
1011  
400  
Isolation resistance  
VIO = 500 V, Tamb = 25 °C  
RIO  
RIO  
Ptot  
Ptot  
V
IO = 500 V, Tamb = 100 °C  
Total dissipation  
ILD32  
ILQ32  
mW  
mW  
500  
Derate linearly from 25 °C  
ILD32  
ILQ32  
5.33  
6.67  
mW/°C  
mW/°C  
°C  
Storage temperature  
Tstg  
- 55 to + 150  
- 55 to + 100  
10  
Operating temperature  
Lead soldering time at 260 °C  
Tamb  
°C  
sec.  
1) between emitter and detector refer to standard climate 23 °C/50 %RH; DIN 50014  
Electrical Characteristics  
Tamb = 25 °C, unless otherwise specified  
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering  
evaluation. Typical values are for information only and are not part of the testing requirements.  
Input  
Parameter  
Test condition  
IF = 10 mA  
VR = 3.0 V  
R = 0 V  
Symbol  
VF  
Min  
Typ.  
1.25  
Max  
1.5  
Unit  
V
Forward voltage  
Reverse current  
Capacitance  
IR  
0.1  
25  
100  
pF  
pF  
V
CO  
Output  
Parameter  
Test condition  
IC = 100 µA, IF = 0  
Symbol  
BVCEO  
Min  
30  
Typ.  
Max  
100  
Unit  
V
Collector-emitter breakdown  
voltage  
Breakdown voltage emitter-  
collector  
I
E = 100 µA  
BCECO  
ICEO  
5.0  
10  
nA  
nA  
Collector-emitter leakage  
current  
VCE = 10 V, IF = 0  
1.0  
www.vishay.com  
2
Document Number 83650  
Rev. 1.5, 26-Oct-04  
ILD32/ ILQ32  
Vishay Semiconductors  
Coupler  
Parameter  
Test condition  
Symbol  
VCEsat  
Min  
Typ.  
0.5  
Max  
1.0  
Unit  
V
Collector emitter  
IC = 2.0 mA, IF = 8.0 mA  
Capacitance (input-output)  
CIO  
pF  
Current Transfer Ratio  
Parameter  
Test condition  
Symbol  
CTR  
Min  
500  
Typ.  
Max  
Max  
Unit  
%
Current Transfer Ratio  
IF = 10 mA, VCE = 10 V  
Switching Characteristics  
Parameter  
Test condition  
Symbol  
ton  
Min  
Typ.  
15  
Unit  
Turn-on time  
VCC = 10 V, IF = 5.0 mA,  
µs  
RL = 100 Ω  
Turn-off time  
V
CC = 10 V, IF = 5.0 mA,  
toff  
30  
µs  
RL = 100 Ω  
Typical Characteristics (Tamb = 25 °C unless otherwise specified)  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
Normalized to:  
Vce = 10 V  
IF = 10 mA  
Ta = 25°C  
1. 3  
Ta = –55°C  
Ta = 25°C  
1.2  
1.1  
Vce = 10 V  
Vce =1V  
1.0  
0.9  
Ta = 85°C  
0.8  
0.7  
.1  
1
10  
100  
1000  
IF - LED Current - mA  
.1  
1
10  
100  
IF - Forward Current - mA  
iild32_01  
iild32_02  
Figure 1. Forward Voltage vs. Forward Current  
Figure 2. Normalized Non-saturated and Saturated CTRCE vs.  
LED Current  
Document Number 83650  
Rev. 1.5, 26-Oct-04  
www.vishay.com  
3
ILD32/ ILQ32  
Vishay Semiconductors  
10  
Normalized to:  
Ta = 25°C  
Vce = 10 V  
Vce = 1V  
I
F
IF = 10 mA  
1
Vce = 10 V  
.1  
t
R
D
t
V
O
t
PLH  
.01  
V
=1.5 V  
TH  
t
F
t
t
S
.001  
PHL  
100  
.1  
1
10  
iild32_06  
IF - LED Current - mA  
iild32_03  
Figure 3. Normalized Non-Saturated and Saturated Collector-  
Emitter Current vs. LED Current  
Figure 6. Switching Timing  
80  
T
= 25°C, V = 10 V  
CC  
A
1 k  
Vth = 1.5 V  
V
=10 V  
CC  
60  
F=10 KHz,  
DF=50%  
R
220 ıˇ  
470 Ω  
L
40  
20  
V
O
I
=5 mA  
F
100 Ω  
0
0
5
I
10  
- LED Current - mA  
15  
20  
iild32_07  
F
iild32_04  
Figure 4. Low to High Propagation Delay vs. Collector Load  
Resistance and LED Current  
Figure 7. Switching Schematic  
20  
1k  
T = 25°C  
A
15  
10  
V
= 10 V  
CC  
Vth = 1.5 V  
100Ω  
5
0
0
5
10  
15  
20  
I
- LED Current - mA  
F
iild32_05  
Figure 5. High to low Propagation Delay vs. Collector Load  
Resistance and LED Current  
www.vishay.com  
4
Document Number 83650  
Rev. 1.5, 26-Oct-04  
ILD32/ ILQ32  
Vishay Semiconductors  
Package Dimensions in Inches (mm)  
pin one ID  
4
5
3
6
1
8
2
7
.255 (6.48)  
.268 (6.81)  
ISO Method A  
.379 (9.63)  
.390 (9.91)  
.030 (0.76)  
.045 (1.14)  
.300 (7.62)  
.031 (0.79)  
typ.  
4° typ.  
.130 (3.30)  
.150 (3.81)  
.230(5.84)  
.250(6.35)  
.050 (1.27)  
10°  
.110 (2.79)  
.130 (3.30)  
.020 (.51 )  
.035 (.89 )  
3°–9°  
.008 (.20)  
.012 (.30)  
.018 (.46)  
.022 (.56)  
.100 (2.54) typ.  
i178006  
Package Dimensions in Inches (mm)  
pin one ID  
8
7
6
5
4
3
2
1
.255 (6.48)  
.265 (6.81)  
9
10 11 12 13 14 15 16  
ISO Method A  
.779 (19.77 )  
.790 (20.07)  
.300 (7.62)  
typ.  
.030 (.76)  
.045 (1.14)  
.031(.79)  
.130 (3.30)  
.150 (3.81)  
.110 (2.79)  
.130 (3.30)  
.230 (5.84)  
.250 (6.35)  
10°  
typ.  
3°–9°  
.008 (.20)  
.012 (.30)  
4°  
.020(.51)  
.035 (.89)  
.018 (.46)  
.022 (.56)  
.100 (2.54)typ.  
.050 (1.27)  
i178007  
Document Number 83650  
Rev. 1.5, 26-Oct-04  
www.vishay.com  
5
ILD32/ ILQ32  
Vishay Semiconductors  
Option 7  
Option 6  
Option 9  
.300 (7.62)  
TYP.  
.407 (10.36)  
.391 (9.96)  
.375 (9.53)  
.395 (10.03)  
.307 (7.8)  
.291 (7.4)  
.300 (7.62)  
ref.  
.028 (0.7)  
MIN.  
.180 (4.6)  
.160 (4.1)  
.0040 (.102)  
.0098 (.249)  
.012 (.30) typ.  
.315 (8.0)  
MIN.  
.020 (.51)  
.040 (1.02)  
.014 (0.35)  
.010 (0.25)  
.400 (10.16)  
.331 (8.4)  
MIN.  
15° max.  
18450  
.315 (8.00)  
min.  
.406 (10.3)  
MAX.  
.430 (10.92)  
www.vishay.com  
6
Document Number 83650  
Rev. 1.5, 26-Oct-04  
ILD32/ ILQ32  
Vishay Semiconductors  
Ozone Depleting Substances Policy Statement  
It is the policy of Vishay Semiconductor GmbH to  
1. Meet all present and future national and international statutory requirements.  
2. Regularly and continuously improve the performance of our products, processes, distribution and  
operatingsystems with respect to their impact on the health and safety of our employees and the public, as  
well as their impact on the environment.  
It is particular concern to control or eliminate releases of those substances into the atmosphere which are  
known as ozone depleting substances (ODSs).  
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs  
and forbid their use within the next ten years. Various national and international initiatives are pressing for an  
earlier ban on these substances.  
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use  
of ODSs listed in the following documents.  
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments  
respectively  
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental  
Protection Agency (EPA) in the USA  
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.  
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting  
substances and do not contain such substances.  
We reserve the right to make changes to improve technical design  
and may do so without further notice.  
Parameters can vary in different applications. All operating parameters must be validated for each  
customer application by the customer. Should the buyer use Vishay Semiconductors products for any  
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all  
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal  
damage, injury or death associated with such unintended or unauthorized use.  
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany  
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423  
Document Number 83650  
Rev. 1.5, 26-Oct-04  
www.vishay.com  
7
Legal Disclaimer Notice  
Vishay  
Notice  
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,  
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.  
Information contained herein is intended to provide a product description only. No license, express or implied, by  
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's  
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express  
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness  
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.  
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.  
Customers using or selling these products for use in such applications do so at their own risk and agree to fully  
indemnify Vishay for any damages resulting from such improper use or sale.  
Document Number: 91000  
Revision: 08-Apr-05  
www.vishay.com  
1

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