IMBD4448-G3-18 [VISHAY]

Rectifier Diode, 1 Element, 0.15A, 100V V(RRM), Silicon, GREEN PACKAGE-3;


型号：	IMBD4448-G3-18
厂家：	VISHAY
描述：	Rectifier Diode, 1 Element, 0.15A, 100V V(RRM), Silicon, GREEN PACKAGE-3 光电二极管
文件：	总5页 (文件大小：92K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

IMBD4448-G

Vishay Semiconductors

www.vishay.com

Small Signal Switching Diode

FEATURES

• Silicon epitaxial planar diode

• Fast switching diode in case SOT-23, especially

suited for automatic insertion.

• AEC-Q101 qualified

• Base P/N-G3 - green, commercial grade

• Material categorization: 

For definitions of compliance please see

www.vishay.com/doc?99912



MECHANICAL DATA

Case: SOT-23

Weight: approx. 8.1 mg

Packaging codes/options:

18/10K per 13" reel (8 mm tape), 10K/box

08/3K per 7" reel (8 mm tape), 15K/box

PARTS TABLE

PART

ORDERING CODE

INTERNAL CONSTRUCTION

TYPE MARKING

REMARKS

IMBD4448-G

IMBD4448-G3-08 or IMBD4448-G3-18

Single diode

Tape and reel

ABSOLUTE MAXIMUM RATINGS (T_amb= 25 °C, unless otherwise specified)

PARAMETER

TEST CONDITION

SYMBOL

VALUE

UNIT

Reverse voltage

Peak reverse voltage

V_R

V_RM

100

Rectified current (average) half wave

rectification with resistive load ⁽¹⁾

f  50 Hz

I_F(AV)

150

Surge forward current

Power dissipation ⁽¹⁾

t < 1 s and T_j= 25 °C

I_FSM

P_tot

500

350

THERMAL CHARACTERISTICS (T_amb= 25 °C, unless otherwise specified)

PARAMETER

Thermal resistance junction to ambient air ⁽¹⁾

TEST CONDITION

SYMBOL

R_thJA

T_j

VALUE

450

UNIT

K/W

°C

Junction temperature

150

Storage temperature range

Operating temperature range

T_stg

- 65 to + 150

- 55 to + 150

°C

T_op

°C

Note

(1)

Device on fiberglass substrate, see layout on next page.

Rev. 1.1, 15-May-13

Document Number: 85883

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IMBD4448-G

Vishay Semiconductors

www.vishay.com

ELECTRICAL CHARACTERISTICS (T_amb= 25 °C, unless otherwise specified)

PARAMETER

TEST CONDITION

SYMBOL

MIN.

TYP.

MAX.

0.72

UNIT

I_F= 5 mA

V_F

I_R

0.62

Forward voltage

I_F= 100 mA

V_R= 70 V

2500

μA

Leakage current

_R= 70 V, T_j= 150 °C

I_R

V_R= 25 V, T_j= 150 °C

V_F= V_R= 0 V

I_R

Diode capacitance

C_D

I_F= 10 mA, i_R= 1 mA,

Reverse recovery time

t_rr

V_R= 6 V, R_L= 100 



Layout For R_thJAtest

Thickness: 

Fiberglass 1.5 mm (0.059 in.)

Copper leads 0.3 mm (0.012 in.)

7.5 (0.3)

3 (0.12)

1 (0.4)

2 (0.8)

1 (0.4)

12 (0.47)

2 (0.8)

0.8 (0.03)

15 (0.59)

5 (0.2)

1.5 (0.06)

5.1 (0.2)

17451

TYPICAL CHARACTERISTICS (T_amb= 25 °C, unless otherwise specified)

1000

100

10000

1000

100

T = 25 C

f = 1 kHz

T = 100

0.1

0.01

0.2 0.4 0.6 0.8

1 1.2 1.4 1.6 1.8 2

0.01

0.1

100

18689

- Forward Voltage ( V )

- Forward Current (mA)

18662

Fig. 1 - Forward Current vs. Forward Voltage

Fig. 2 - Dynamic Forward Resistance vs. Forward Current

Rev. 1.1, 15-May-13

Document Number: 85883

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IMBD4448-G

Vishay Semiconductors

www.vishay.com

500

400

300

200

100

1.1

1.0

0.9

T = 25 C

f = 1 MHz

0.8

0.7

20 40 60 80 100 120 140 160180 200

- Ambient Temperature ( °C )

- Reverse Voltage (V)

18664

18663

amb

Fig. 3 - Admissible Power Dissipation vs. Ambient Temperature

Fig. 4 - Relative Capacitance vs. Reverse Voltage

100

ν_{= t}

T = 1/f

= 0

I_FRM

0.1

0.2

0.5

-5

-4

-3

-2

-1

18709

- Pulse Length (s)

Fig. 5 - Admissible Repetitive Peak Forward Current vs. Pulse Duration



Rev. 1.1, 15-May-13

Document Number: 85883

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IMBD4448-G

Vishay Semiconductors

www.vishay.com

PACKAGE DIMENSIONS in millimeters (inches): SOT-23

3.1 (0.122)

2.8 (0.110)

0.550 ref. (0.022 ref.)

0.5 (0.020)

0.3 (0.012)

0.45 (0.018)

0.35 (0.014)

0.45 (0.018)

0.35 (0.014)

0° to 8°

2.6 (0.102)

2.35 (0.093)

0.45 (0.018)

0.35 (0.014)

Foot print recommendation:

0.7 (0.028)

1 (0.039)

0.9 (0.035)

1 (0.039)

0.9 (0.035)

0.95 (0.037)

Document no.: 6.541-5014.01-4

Rev. 8 - Date: 23.Sept.2009

17418

Rev. 1.1, 15-May-13

Document Number: 85883

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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www.vishay.com

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Revision: 02-Oct-12

Document Number: 91000

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