IR207DM12C [VISHAY]

Rectifier Diode, 1 Phase, 1 Element, 1200V V(RRM), Silicon, WAFER;


型号：	IR207DM12C
厂家：	VISHAY
描述：	Rectifier Diode, 1 Phase, 1 Element, 1200V V(RRM), Silicon, WAFER 二极管
文件：	总4页 (文件大小：81K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Bulletin I0139J 01/00

IR207DM..CCB Series

STANDARD RECOVERY DIODES

Junction Size:

Wafer Size:

Rectangular 207 x 157 mils

V_RRMClass:

800 and 1200 V

Glassivated MOAT

Passivation Process:

Reference IR Packaged Part: 20ETS Series

Major Ratings and Characteristics

Parameters

Units

Test Conditions

V_FM

MaximumForwardVoltage

1100mV

T_J= Amb., I_F= 2 0 A

V_RRMReverse Breakdown Voltage Range

800 and 1200 V T_J= Amb., I_RRM= 100 µA

(1)

(1)Nitrogen flow on die edge.

Mechanical Characteristics

NominalBackMetalComposition,Thickness

Cr - Ni - Ag (1 KA - 4 KA - 6 KA)

100% Al, (20 µm)

NominalFrontMetalComposition,Thickness

ChipDimensions

207x157mils(seedrawing)

100mm,withstd.<110>flat

300 µm

Wafer Diameter

Wafer Thickness

MaximumWidthofSawingLine

45 µm

Reject Ink Dot Size

0.25mmdiameterminimum

Seedrawing

InkDotLocation

RecommendedStorageEnvironment

Storageinoriginalcontainer,indessicated

nitrogen,withnocontamination

Document Number: 93888

www.vishay.com

IR207DM..CCB Series

Bulletin I0139J 01/00

Ordering Information Table

Device Code

IR 207

BCC

International Rectifier Device

Chip Dimension in Mils

Type of Device: D = Wire Bondable Standard Recovery Diode

Passivation Process: M = Glassivated MOAT

Voltage code: Code x 100 = V_RRM

Available Class

08= 800 V

12= 1200 V

Metallization: C = Aluminium (Anode) - Silver (Cathode)

CB = Probed Uncut Die (wafer in box)

None = Probed Die in chip carrier

Outline Table

All dimensions are in millimeters

Document Number: 93888

www.vishay.com

IR207DM..CCB Series

Bulletin I0139J 01/00

Wafer Layout

TOP VIEW

N° 304 Basic Cells

All dimensions are in millimeters

www.vishay.com

Document Number: 93888

Legal Disclaimer Notice

Vishay

Notice

The products described herein were acquired by Vishay Intertechnology, Inc., as part of its acquisition of

International Rectifier’s Power Control Systems (PCS) business, which closed in April 2007. Specifications of the

products displayed herein are pending review by Vishay and are subject to the terms and conditions shown below.

Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or

anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.

Information contained herein is intended to provide a product description only. No license, express or implied, by

estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's

terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express

or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness

for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.

Customers using or selling these products for use in such applications do so at their own risk and agree to fully

indemnify Vishay for any damages resulting from such improper use or sale.

International Rectifier^®, IR^®, the IR logo, HEXFET^®, HEXSense^®, HEXDIP^®, DOL^®, INTERO^®, and POWIRTRAIN^®

are registered trademarks of International Rectifier Corporation in the U.S. and other countries. All other product

names noted herein may be trademarks of their respective owners.

Document Number: 99901

Revision: 12-Mar-07

www.vishay.com

相关型号：