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IRC540-031PBF [VISHAY]

Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220, 5 PIN;

IRC540-031PBF


元器件型号：	IRC540-031PBF
生产厂家：	VISHAY TELEFUNKEN
描述和应用：	Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220, 5 PIN 局域网开关晶体管
PDF文件：	总1页 (文件大小：41K)
下载文档：	下载PDF数据表文档文件
型号参数：IRC540-031PBF参数

IRC540PBF

HEXFET POWER MOSFET ( VDSS=100V , RDS(on)=0.077ヘ , ID=28A )

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56 IRF

IRC540PBF

Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220, 5 PIN

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7 VISHAY

IRC540PBF

Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220, 5 PIN

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0 IRF

IRC5D

Analog IC

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15 ETC

IRC5S

Analog IC

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6 ETC

IRC630

Power MOSFET(Vdss=200V, Rds(on)=0.40ohm, Id=9.0A)

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60 IRF

IRC630-002PBF

Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220, 5 PIN

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0 VISHAY

IRC630-003PBF

Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220, 5 PIN

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0 VISHAY

IRC630-007

TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 9.3A I(D) | TO-220VAR

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12 ETC

IRC630-007

Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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0 IRF

IRC630-008

TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 9.3A I(D) | TO-220VAR

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13 ETC

IRC630-008

Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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0 IRF

IRC630-008PBF

Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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0 IRF

IRC630-018PBF

Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220, 5 PIN

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0 VISHAY

IRC630-019PBF

Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220, 5 PIN

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0 VISHAY

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