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元器件品牌
IRF-33.9UH+-5%ESE2
[VISHAY]
General Purpose Inductor, 3.9uH, 5%, Ferrite-Core,;
元器件型号:
IRF-33.9UH+-5%ESE2
生产厂家:
VISHAY TELEFUNKEN
描述和应用:
General Purpose Inductor, 3.9uH, 5%, Ferrite-Core,
电感器
PDF文件:
总4页 (文件大小:68K)
下载文档:
下载PDF数据表文档文件
型号参数:IRF-33.9UH+-5%ESE2参数
查看货源
IRF330
N-CHANNEL POWER MOSFETS
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on line
156
-
161
SAMSUNG
IRF330
5.5A, 400V, 1.000 Ohm, N-Channel Power MOSFET
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
49
INTERSIL
IRF330
TRANSISTORS N-CHANNEL(Vdss=400V, Rds(on)=1.00ohm, Id=5.5A)
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
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69
IRF
IRF330
N-Channel Power MOSFETs, 5.5A, 350 V/400V
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
59
FAIRCHILD
IRF330
N-CHANNEL POWER MOSFET
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
72
SEME-LAB
IRF330
Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
4
VISHAY
IRF330-333
N-Channel Power MOSFETs, 5.5A, 350 V/400V
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
51
FAIRCHILD
IRF3305
AUTOMOTIVE MOSFET
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
144
IRF
IRF3305PBF
HEXFET㈢ Power MOSFET
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
62
IRF
IRF330R
TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 5.5A I(D) | TO-204AA
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
62
ETC
IRF331
N-Channel Power MOSFETs, 5.5A, 350 V/400V
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
55
FAIRCHILD
IRF331
N-CHANNEL POWER MOSFETS
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
46
SAMSUNG
IRF331
Power Field-Effect Transistor, 5.5A I(D), 350V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
2
VISHAY
IRF3315
Power MOSFET(Vdss=150V, Rds(on)=0.07ohm, Id=27A)
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
260
IRF
IRF3315L
150V Single N-Channel HEXFET Power MOSFET in a TO-262 package
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
36
ETC
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