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元器件品牌
IRF620PBF
[VISHAY]
Power MOSFET; 功率MOSFET
元器件型号：
IRF620PBF
生产厂家：
VISHAY TELEFUNKEN
描述和应用：
Power MOSFET
功率MOSFET
晶体 晶体管 功率场效应晶体管 开关 脉冲 局域网
PDF文件：
总8页 (文件大小：1592K)
下载文档：
下载PDF数据表文档文件
型号参数：IRF620PBF参数
查看货源
IRF620R
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 5A I(D) | TO-220AB
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30
ETC
IRF620S
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 5.2A I(D) | TO-263AB
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54
ETC
IRF620S
HEXFET Power MOSFET
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52
IRF
IRF620S
Power MOSFET
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28
TRSYS
IRF620S
5A, 200V, 0.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
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2
MOTOROLA
IRF620S
Power Field-Effect Transistor, 5.2A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, SMD-220, 3 PIN
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9
VISHAY
IRF620SPBF
HEXFET POWER MOSFET (VDSS=200V , RDS(on)=0.80ヘ , ID=5.2A )
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40
IRF
IRF620SPBF
Power Field-Effect Transistor, 5.2A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, TO-263, 3 PIN
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0
VISHAY
IRF620STRL
暂无描述
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156
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0
IRF
IRF620STRL
Power Field-Effect Transistor, 5.2A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN
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0
VISHAY
IRF620STRLPBF
Power Field-Effect Transistor, 5.2A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN
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0
VISHAY
IRF620STRR
Power Field-Effect Transistor, 5.2A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN
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0
VISHAY
IRF620STRR
Power Field-Effect Transistor, 5.2A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN
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1
VISHAY
IRF620STRRPBF
暂无描述
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0
IRF
IRF620STRRPBF
Power Field-Effect Transistor, 5.2A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN
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0
VISHAY
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