IRF9520STRLPBF [VISHAY]

Power Field-Effect Transistor, 6.8A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN;
IRF9520STRLPBF
型号: IRF9520STRLPBF
厂家: VISHAY TELEFUNKEN    VISHAY TELEFUNKEN
描述:

Power Field-Effect Transistor, 6.8A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN

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文件: 总9页 (文件大小:183K)
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IRF9520STRRPBF

Power Field-Effect Transistor, 6.8A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN

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1 VISHAY

IRF9521

P-Channel Enhancement-Mode Vertical DMOS Power FETs

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116 SUPERTEX

IRF9521

Power Field-Effect Transistor, 6A I(D), 60V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 SAMSUNG

IRF9521

TRANSISTOR,MOSFET,P-CHANNEL,60V V(BR)DSS,6A I(D),TO-220AB

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0 MICROCHIP

IRF9522

P-Channel Enhancement-Mode Vertical DMOS Power FETs

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105 SUPERTEX

IRF9522

Transistor

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0 VISHAY

IRF9522

Power Field-Effect Transistor, 5A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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2 SAMSUNG

IRF9523

P-Channel Enhancement-Mode Vertical DMOS Power FETs

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82 SUPERTEX

IRF9523-006

Power Field-Effect Transistor, 5.9A I(D), 80V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET,

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0 INFINEON

IRF9530

P-CHANNEL POWER MOSFETS

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3728 SAMSUNG

IRF9530

12A, 100V, 0.300 Ohm, P-Channel Power MOSFETs

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764 INTERSIL

IRF9530

TRANSISTORS

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1679 IRF

IRF9530

P-CHANNEL POWER MOSFETS

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1001 SAMSUNG

IRF9530

Power MOSFET

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1063 VISHAY

IRF9530

12A, 100V, 0.3ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB

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30 ROCHESTER