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IRF9610-017PBF [VISHAY]

Power Field-Effect Transistor, 1.8A I(D), 200V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,;

IRF9610-017PBF


元器件型号：	IRF9610-017PBF
生产厂家：	VISHAY TELEFUNKEN
描述和应用：	Power Field-Effect Transistor, 1.8A I(D), 200V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, 局域网开关脉冲晶体管
PDF文件：	总2页 (文件大小：68K)
下载文档：	下载PDF数据表文档文件
型号参数：IRF9610-017PBF参数

IRF9610-018PBF

Power Field-Effect Transistor, 1.8A I(D), 200V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,

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0 VISHAY

IRF9610FPBF

Power Field-Effect Transistor, 200V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,

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12 VISHAY

IRF9610FPBF

Power Field-Effect Transistor, 200V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,

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0 IRF

IRF9610PBF

Power MOSFET

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56 VISHAY

IRF9610PBF

HEXFET POWER MOSFET ( VDSS=-200V , RDS(on)=3.0ヘ , ID=-1.8A )

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135 IRF

IRF9610S

Power MOSFET(Vdss=-200V, Rds(on)=3.0ohm, Id=-1.8A)

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195 IRF

IRF9610S

Power Field-Effect Transistor, 1.8A I(D), 200V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN

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9 IRF

IRF9610SPBF

Power Field-Effect Transistor, 1.8A I(D), 200V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, SMD-220, D2PAK-3

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6 IRF

IRF9610SPBF

Power Field-Effect Transistor, 1.8A I(D), 200V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, SMD-220, D2PAK-3

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5 IRF

IRF9610STRL

暂无描述

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5 IRF

IRF9610STRLPBF

Power Field-Effect Transistor, 1.8A I(D), 200V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, SMD-220, D2PAK-3

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1 IRF

IRF9610STRR

Power Field-Effect Transistor, 1.8A I(D), 200V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN

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6 IRF

IRF9610STRRPBF

Power Field-Effect Transistor, 1.8A I(D), 200V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, SMD-220, D2PAK-3

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6 IRF

IRF9611

TRANSISTOR | MOSFET | P-CHANNEL | 150V V(BR)DSS | 1A I(D) | TO-220AB

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75 ETC

IRF9611

Power Field-Effect Transistor, 1.75A I(D), 150V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 SAMSUNG

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