IRF9Z24S [VISHAY]

Power MOSFET; 功率MOSFET
IRF9Z24S
型号: IRF9Z24S
厂家: VISHAY TELEFUNKEN    VISHAY TELEFUNKEN
描述:

Power MOSFET
功率MOSFET

晶体 晶体管 功率场效应晶体管 开关 脉冲 局域网
文件: 总8页 (文件大小:2304K)
下载:  下载PDF数据表文档文件

IRF9Z24SPBF

Power MOSFET

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33 VISHAY

IRF9Z24SPBF

Power Field-Effect Transistor, 11A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3

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0 IRF

IRF9Z24STRL

Power MOSFET

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20 VISHAY

IRF9Z24STRL

Power Field-Effect Transistor, 11A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, DPAK-3

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0 VISHAY

IRF9Z24STRL

Power Field-Effect Transistor, 11A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3

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0 IRF

IRF9Z24STRLPBF

Power MOSFET

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21 VISHAY

IRF9Z24STRLPBF

Power Field-Effect Transistor, 11A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3

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0 IRF

IRF9Z24STRR

Power MOSFET

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19 VISHAY

IRF9Z24STRR

Power Field-Effect Transistor, 11A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, DPAK-3

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0 VISHAY

IRF9Z24STRR

Power Field-Effect Transistor, 11A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3

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0 IRF

IRF9Z24STRRPBF

Power MOSFET

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17 VISHAY

IRF9Z24STRRPBF

Power Field-Effect Transistor, 11A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3

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0 IRF

IRF9Z25

TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 8.9A I(D) | TO-220AB

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29 ETC

IRF9Z25

Transistor,

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0 IRF

IRF9Z25

Power Field-Effect Transistor, 8.9A I(D), 60V, 0.33ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 SAMSUNG