IRFC11N50AB [VISHAY]
Power Field-Effect Transistor, 500V, 0.52ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 0.165 X 0.248 INCH, DIE-3;
| 型号： | IRFC11N50AB |
| 厂家： | 
VISHAY |
| 描述： | Power Field-Effect Transistor, 500V, 0.52ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 0.165 X 0.248 INCH, DIE-3 |
| 文件： | 总3页 (文件大小：69K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 94737
IRFC11N50AB
HEXFET® Power MOSFET Die in Wafer Form
l 100% Tested at Probe
l Available in Chip Pack, Unsawn Wafer
Sawn on Film
D
500V
RDS(on) = 0.52Ω
(max.)
G
5" Wafer
l Ultra Low On-Resistance
S
Key Electrical Characteristics (Packaged Part)
Parameter
V(BR)DSS
RDS(on)
VGS(th)
IDSS
Description
Drain-to-Source Breakdown Voltage
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Min.
500V
–––
2.0V
–––
Typ.
–––
–––
–––
–––
Max. Test Conditions
VGS = 0V, ID = 250µA
VGS = 10V, ID = 6.6A
–––
0.52Ω
4.0V
VDS = VGS, ID = 250µA
VDS= 500V, VGS=0V, TJ=25°C
VGS = ±30V
Drain-to-Source Leakage Current
Gate-to-Source Leakage Current
Operating Junction and
25µA
IGSS
±100nA
TJ
-55°C to 150°C Max.
TSTG
Storage Temperature Range
Mechanical Data
Nominal Backmetal Composition, (Thickness)
Nominal Front Metal Composition, (Thickness)
Dimensions
Cr- Ni - Ag, (1kA°-2kA°-2.5kA°)
Al with 1% Si (3.0µm)
0.165" x 0.248"
Wafer Diameter
125 mm, with 100 flat
425 µm
Wafer Thickness, Tolerance
Relevant Die Mechanical Dwg. Number
Minimum Street Width
01-5342
0.084 mm
Reject Ink Dot Size
0.51 mm diameter minimum
Recommended Storage Environment
Store in original container, in dessicated
nitrogen, with no contamination
For optimum electrical results, die attach
temperature should not exceed 300°C
IRFB11N50A
Recommended Die Attach Conditions
Referenced Package Part:
Die Outline
Note:
The above data sheet is based on IR sample testing under certain predetermined and assumed conditions, and is
provided for illustration purposes only. Customers are encouraged to perform testing in actual proposed packaged
and use conditions. IR die products are tested using IR-based quality assurance procedures and are manufac-
tured using IR’s established processes. Programs for customer-specified testing are available upon request. IR
has experienced assembly yields of generally 95% or greater for individual die; however, customer’s results may
vary. Estimates such as those described and set forth in this data sheet for semiconductor die will vary depending
on a number of packaging, handling, use and other factors. Sold die may not perform on an equivalent basis to
standard package products and are therefore offered with a limited warranty as described in IR’s applicable
standard terms and conditions of sale. All IR die sales are subject to IR’s applicable standard terms and conditions
of sale, which are available upon request.
Part number shown is for die in waferform. Contact factory for these other options.
07/18/03
Document Number: 90422
www.vishay.com
1
IRFC11N50AB
Additional Testing and Screening
For Customers requiring product supplied as Known Good Die (KGD) or requiring specific die level
testing, please contact your local IR Sales.
Shipping
Three shipping options are offered as standard.
•
•
•
Un-sawn wafer
Die in waffle pack
Die on film
Tape and Reel is also available for some products. Please consult your local IR sales office or email
http://die.irf.com for additional information.
Please specify your required shipping option when requesting prices and ordering Die product. If not
specified, Un-sawn wafer will be assumed.
Handling
•
•
•
Product must be handled only at ESD safe workstations. Standard ESD precautions and
safe work environments are as defined in MIL-HDBK-263.
Product must be handled only in a class 10,000 or better-designated clean room
environment.
Singulated die are not to be handled with tweezers. A vacuum wand with a non-metallic ESD
protected tip should be used.
Wafer/Die Storage
•
•
•
Proper storage conditions are necessary to prevent product contamination and/or
degradation after shipment.
Un-sawn wafers and singulated die can be stored for up to 12 months when in the original
sealed packaging at room temperature (45% +/- 15% RH controlled environment).
Un-sawn wafers and singulated die that have been opened can be stored when returned to
their containers and placed in a Nitrogen purged cabinet, at room temperature (45% +/- 15%
RH controlled environment).
•
Note: To reduce the risk of contamination or degradation, it is recommended that product not
being used in the assembly process be returned to their original containers and resealed
with a vacuum seal process.
•
•
Sawn wafers on a film frame are intended for immediate use and have a limited shelf life.
Die in Surf Tape type carrier tape are intended for immediate use and have a limited shelf
life. This is primarily due to the nature of the adhesive tape used to hold the product in the
carrier tape cavity. This product can be stored for up to 30 days. This applies whether or not
the material has remained in its original sealed container.
Further Information
For further information please contact your local IR Sales office or email your enquiry to
DieSales@irf.com
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
07/03
Document Number: 90422
www.vishay.com
2
Legal Disclaimer Notice
Vishay
Notice
The products described herein were acquired by Vishay Intertechnology, Inc., as part of its acquisition of
International Rectifier’s Power Control Systems (PCS) business, which closed in April 2007. Specifications of the
products displayed herein are pending review by Vishay and are subject to the terms and conditions shown below.
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or
anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
International Rectifier®, IR®, the IR logo, HEXFET®, HEXSense®, HEXDIP®, DOL®, INTERO®, and POWIRTRAIN®
are registered trademarks of International Rectifier Corporation in the U.S. and other countries. All other product
names noted herein may be trademarks of their respective owners.
Document Number: 99901
Revision: 12-Mar-07
www.vishay.com
1
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