IRFI520G [VISHAY]

Power MOSFET; 功率MOSFET
IRFI520G
元器件型号: IRFI520G
生产厂家: VISHAY TELEFUNKEN    VISHAY TELEFUNKEN
描述和应用:

Power MOSFET
功率MOSFET

PDF文件: 总8页 (文件大小:1628K)
下载文档:  下载PDF数据表文档文件
型号参数:IRFI520G参数

IRFI520G-002PBF

Power Field-Effect Transistor, 7.2A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 IRF

IRFI520G-004PBF

Power Field-Effect Transistor, 7.2A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 IRF

IRFI520G-009PBF

Power Field-Effect Transistor, 7.2A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 IRF

IRFI520G-011

Power Field-Effect Transistor, 7.2A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 IRF

IRFI520G-011PBF

Power Field-Effect Transistor, 7.2A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 IRF

IRFI520G-012PBF

Power Field-Effect Transistor, 7.2A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 IRF

IRFI520G-013PBF

Power Field-Effect Transistor, 7.2A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 IRF

IRFI520G-015PBF

Power Field-Effect Transistor, 7.2A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 IRF

IRFI520G-017PBF

Power Field-Effect Transistor, 7.2A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 IRF

IRFI520G-019PBF

Power Field-Effect Transistor, 7.2A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 IRF

IRFI520G-024PBF

Power Field-Effect Transistor, 7.2A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 IRF

IRFI520G-029PBF

Power Field-Effect Transistor, 7.2A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 IRF

IRFI520GPBF

Power MOSFET

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12 VISHAY

IRFI520GPBF

HEXFET Power MOSFET

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15 IRF

IRFI520N

Power MOSFET(Vdss=100V, Rds(on)=0.20ohm, Id=7.6A)

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48 IRF