IRFI520GPBF [IRF]

HEXFET Power MOSFET; HEXFET功率MOSFET
IRFI520GPBF
型号: IRFI520GPBF
厂家: INTERNATIONAL RECTIFIER    INTERNATIONAL RECTIFIER
描述:

HEXFET Power MOSFET
HEXFET功率MOSFET

文件: 总8页 (文件大小:1098K)
下载:  下载PDF数据表文档文件

IRFI520N

Power MOSFET(Vdss=100V, Rds(on)=0.20ohm, Id=7.6A)

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48 IRF

IRFI520N

Power Field-Effect Transistor, 7.6A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, FULL PACK-3

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1 IRF

IRFI520N-005PBF

暂无描述

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0 INFINEON

IRFI520N-006

Power Field-Effect Transistor, 7.2A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 INFINEON

IRFI520N-009PBF

Power Field-Effect Transistor, 7.2A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 INFINEON

IRFI520N-010PBF

Power Field-Effect Transistor, 7.2A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 INFINEON

IRFI520N-012PBF

Power Field-Effect Transistor, 7.2A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 INFINEON

IRFI520N-013

Power Field-Effect Transistor, 7.2A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 INFINEON

IRFI520N-013PBF

Power Field-Effect Transistor, 7.2A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 INFINEON

IRFI520N-015PBF

Power Field-Effect Transistor, 7.2A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 INFINEON

IRFI520NPBF

HEXFET㈢ Power MOSFET

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12 IRF

IRFI5210

HEXFET Power MOSFET

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41 IRF

IRFI5210

HEXFET Power MOSFET

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28 IRF

IRFI530

TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 9.7A I(D) | TO-220AB

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77 ETC

IRFI530-013

Power Field-Effect Transistor, 9.7A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,

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0 INFINEON