IRFI530GPBF [VISHAY]

Power MOSFET; 功率MOSFET


型号：	IRFI530GPBF
厂家：	VISHAY
描述：	Power MOSFET 功率MOSFET
文件：	总8页 (文件大小：937K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

IRFI530G, SiHFI530G

Vishay Siliconix

Power MOSFET

FEATURES

PRODUCT SUMMARY

V_DS(V)

• Isolated Package

100

Available

• High Voltage Isolation = 2.5 kV_RMS(t = 60 s;

f = 60 Hz)

R_DS(on)(Ω)

V_GS= 10 V

0.16

RoHS*

COMPLIANT

• Sink to Lead Creepage Distance = 4.8 mm

• 175 °C Operating Temperature

• Dynamic dV/dt Rating

Q_g(Max.) (nC)

5.4

_gs(nC)

_gd(nC)

• Low Thermal Resistance

Configuration

Single

• Lead (Pb)-free Available

DESCRIPTION

TO-220 FULLPAK

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

The TO-220 FULLPAK eliminates the need for additional

insulating hardware in commercial-industrial applications.

The molding compound used provides a high isolation

capability and a low thermal resistance between the tab and

external heatsink. This isolation is equivalent to using a 100

micron mica barrier with standard TO-220 product. The

FULLPAK is mounted to a heatsink using a single clip or by

a single screw fixing.

N-Channel MOSFET

ORDERING INFORMATION

Package

TO-220 FULLPAK

IRFI530GPbF

SiHFI530G-E3

IRFI530G

Lead (Pb)-free

SnPb

SiHFI530G

ABSOLUTE MAXIMUM RATINGS T_C= 25 °C, unless otherwise noted

PARAMETER

SYMBOL

LIMIT

100

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

T_C= 25 °C

T_C=100°C

9.7

Continuous Drain Current

_GSat 10 V

I_D

6.9

Pulsed Drain Current^a

I_DM

Linear Derating Factor

0.28

100

W/°C

Single Pulse Avalanche Energy^b

Repetitive Avalanche Current^a

Repetitive Avalanche Energy^a

E_AS

I_AR

9.7

E_AR

4.2

Maximum Power Dissipation

_C= 25 °C

P_D

Peak Diode Recovery dV/dt^c

dV/dt

T_J, T_stg

5.5

V/ns

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

- 55 to + 175

300^d

°C

for 10 s

6-32 or M3 screw

lbf · in

N · m

Mounting Torque

1.1

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. V_DD= 25 V, starting T_J= 25 °C, L = 1.6 mH, R_G= 25 Ω, I_AS= 9.7 A (see fig. 12).

c. I_SD≤ 9.7 A, dI/dt ≤ 140 A/µs, V_DD≤ V_DS, T_J≤ 175 °C.

d. 1.6 mm from case.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 90180

S-82995-Rev. A, 12-Jan-09

www.vishay.com

IRFI530G, SiHFI530G

Vishay Siliconix

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

TYP.

MAX.

UNIT

Maximum Junction-to-Ambient

Maximum Junction-to-Case (Drain)

R_thJA

R_thJC

°C/W

3.6

SPECIFICATIONS T_J= 25 °C, unless otherwise noted

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Static

Drain-Source Breakdown Voltage

V_DSTemperature Coefficient

Gate-Source Threshold Voltage

Gate-Source Leakage

V_DS

ΔV_DS/T_J

V_GS(th)

I_GSS

V_GS= 0 V, I_D= 250 µA

Reference to 25 °C, I_D= 1 mA

V_DS= V_GS, I_D= 250 µA

100

V/°C

0.12

2.0

4.0

100

250

0.16

V_GS

V_DS= 100 V, V_GS= 0 V

_DS= 80 V, V_GS= 0 V, T_J= 150 °C

V_GS= 10 V

I_D= 5.8 A^b

V_DS= 50 V, I_D= 5.8 A^b

20 V

Zero Gate Voltage Drain Current

I_DSS

µA

Drain-Source On-State Resistance

Forward Transconductance

Dynamic

R_DS(on)

g_fs

4.0

Input Capacitance

C_iss

C_oss

C_rss

670

250

V_GS= 0 V,

V_DS= 25 V,

f = 1.0 MHz, see fig. 5

Output Capacitance

Reverse Transfer Capacitance

Drain to Sink Capacitance

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Turn-On Delay Time

Rise Time

f = 1.0 MHz

Q_g

5.4

I_D= 9.7 A, V_DS= 80 V,

see fig. 6 and 13^b

Q_gs

Q_gd

t_d(on)

t_r

V_GS= 10 V

8.6

_DD= 50 V, I_D= 9.7 A,

_G= 12 Ω_,R_D= 5.1 Ω,

see fig. 10^b

Turn-Off Delay Time

Fall Time

t_d(off)

t_f

Between lead,

Internal Drain Inductance

Internal Source Inductance

L_D

L_S

4.5

7.5

6 mm (0.25") from

package and center of

die contact

Drain-Source Body Diode Characteristics

MOSFET symbol

showing the

integral reverse

p - n junction diode

Continuous Source-Drain Diode Current

I_S

9.7

Pulsed Diode Forward Current^a

I_SM

Body Diode Voltage

V_SD

t_rr

T_J= 25 °C, I_S= 9.7 A, V_GS= 0 V^b

2.5

280

1.7

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

Forward Turn-On Time

150

0.85

µC

T_J= 25 °C, I_F= 9.7 A, dI/dt = 100 A/µs^b

Q_rr

t_on

Intrinsic turn-on time is negligible (turn-on is dominated by L_Sand L_D)

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.

www.vishay.com

Document Number: 90180

S-82995-Rev. A, 12-Jan-09

IRFI530G, SiHFI530G

Vishay Siliconix

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Fig. 1 - Typical Output Characteristics, T_C= 25 °C

Fig. 3 - Typical Transfer Characteristics

Fig. 2 - Typical Output Characteristics, T_C= 175 °C

Fig. 4 - Normalized On-Resistance vs. Temperature

Document Number: 90180

S-82995-Rev. A, 12-Jan-09

www.vishay.com

IRFI530G, SiHFI530G

Vishay Siliconix

Fig. 7 - Typical Source-Drain Diode Forward Voltage

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

Fig. 5 - Fig. 8 - Maximum Safe Operating Area

Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage

www.vishay.com

Document Number: 90180

S-82995-Rev. A, 12-Jan-09

IRFI530G, SiHFI530G

Vishay Siliconix

R_D

V_DS

V_GS

D.U.T.

R_G

10 V

Pulse width ≤ 1 µs

Duty factor ≤ 0.1 %

Fig. 10a - Switching Time Test Circuit

V_DS

90 %

10 %

V_GS

t_d(on)t_r

t_d(off)t_f

Fig. 9 - Maximum Drain Current vs. Case Temperature

Fig. 10b - Switching Time Waveforms

Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

V_DS

Vary t_pto obtain

required I_AS

t_p

V_DD

D.U.T

R_G

V_DD

V_DS

I_AS

10 V

0.01 Ω

t_p

I_AS

Fig. 12a - Unclamped Inductive Test Circuit

Fig. 12b - Unclamped Inductive Waveforms

Document Number: 90180

S-82995-Rev. A, 12-Jan-09

www.vishay.com

IRFI530G, SiHFI530G

Vishay Siliconix

Fig. 12c - Maximum Avalanche Energy vs. Drain Current

Current regulator

Same type as D.U.T.

50 kΩ

Q_G

10 V

12 V

0.2 µF

0.3 µF

Q_GS

Q_GD

V_DS

D.U.T.

V_G

V_GS

3 mA

Charge

I_G

I_D

Current sampling resistors

Fig. 13b - Gate Charge Test Circuit

Fig. 13a - Basic Gate Charge Waveform

www.vishay.com

Document Number: 90180

S-82995-Rev. A, 12-Jan-09

IRFI530G, SiHFI530G

Vishay Siliconix

Peak Diode Recovery dV/dt Test Circuit

Circuit layout considerations

• Low stray inductance

• Ground plane

D.U.T.

• Low leakage inductance

current transformer

R_G

• dV/dt controlled by R_G

• Driver same type as D.U.T.

• I_SDcontrolled by duty factor "D"

• D.U.T. - device under test

V_DD

Driver gate drive

P.W.

Period

D =

= 10 V*

D.U.T. I waveform

Reverse

recovery

current

Body diode forward

current

dI/dt

D.U.T. V waveform

Diode recovery

dV/dt

Re-applied

voltage

Body diode forward drop

Ripple ≤ 5 %

Inductor current

* V_GS= 5 V for logic level devices

Fig.14 - For N-Channel

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon

Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and

reliability data, see www.vishay.com/ppg?90180.

Document Number: 90180

S-82995-Rev. A, 12-Jan-09

www.vishay.com

Legal Disclaimer Notice

www.vishay.com

Vishay

Disclaimer

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE

RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,

“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other

disclosure relating to any product.

Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or

the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all

liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,

consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular

purpose, non-infringement and merchantability.

Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical

requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements

about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular

product with the properties described in the product specification is suitable for use in a particular application. Parameters

provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All

operating parameters, including typical parameters, must be validated for each customer application by the customer’s

technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,

including but not limited to the warranty expressed therein.

Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining

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Material Category Policy

Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the

definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council

of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment

(EEE) - recast, unless otherwise specified as non-compliant.

Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that

all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.

Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free

requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference

to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21

conform to JEDEC JS709A standards.

Revision: 02-Oct-12

Document Number: 91000

IRFI530GPBF [VISHAY]

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