IRKL500-12 [VISHAY]
Silicon Controlled Rectifier, 785A I(T)RMS, 500000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element, SUPER MAGN-A-PAK-4;
| 型号： | IRKL500-12 |
| 厂家： | 
VISHAY |
| 描述： | Silicon Controlled Rectifier, 785A I(T)RMS, 500000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element, SUPER MAGN-A-PAK-4 局域网 栅 栅极 |
| 文件： | 总9页 (文件大小：119K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Bulletin I27401 rev. A 09/97
IRK.500.. SERIES
SUPER MAGN-A-pakTM Power Modules
THYRISTOR / DIODE and
THYRISTOR / THYRISTOR
Features
500 A
High current capability
3000 VRMS isolating voltage with non-toxic substrate
High surge capability
Industrial standard package
UL E78996 approved
Typical Applications
Motor starters
DC motor controls - AC motor controls
Uninterruptable power supplies
Major Ratings and Characteristics
Parameters
IT(AV) or IF(AV)
IRK.500..
500
Units
A
@ TC
82
°C
IT(RMS)
785
82
A
@ TC
°C
KA
KA
ITSMor IFSM @50Hz
17.8
18.7
1591
1452
@60Hz
2
2
I t
@50Hz
@60Hz
KA s
2
KA s
2
2
I √t
15910
KA √s
VDRM/VRRM range
800 to 1600
V
TSTG
TJ
range
range
-40to150
-40to130
°C
°C
Document Number: 93749
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1
IRK.500.. Series
Bulletin I27401 rev. A 09/97
ELECTRICALSPECIFICATIONS
Voltage Ratings
Voltage
Code
VRRM/VDRM, maximum repetitive
VRSM , maximum non-
IRRM/IDRM max.
Type number
IRK.500..
peak reverse voltage
V
repetitive peak rev. voltage
V
@ TJ = TJ max.
mA
08
12
14
16
800
900
1200
1400
1600
1300
1500
1700
100
On-state Conduction
Parameter
IT(AV)
IRK.500..
Units Conditions
Maximum average on-state current
500
82
A
°C
A
180° conduction, half sine wave
IF(AV)
@ Case temperature
IT(RMS) Maximum RMS on-state current
785
180° conduction, half sine wave @ TC = 82°C
t = 10ms No voltage
ITSM
IFSM
Maximum peak, one-cycle,
non-repetitive surge current
17.8
18.7
KA
t = 8.3ms reapplied
15.0
t = 10ms 100% VRRM
15.7
t = 8.3ms reapplied
Sinusoidal half wave,
I2t
Maximum I2t for fusing
1591
1452
1125
1027
15910
KA2s t = 10ms No voltage Initial TJ = TJ max.
t = 8.3ms reapplied
t = 10ms 100% VRRM
t = 8.3ms reapplied
I2√t
Maximum I2√t for fusing
KA2√s t = 0.1 to 10ms, no voltage reapplied
VT(TO)1 Low level value of threshold voltage
VT(TO)2 High level value of threshold voltage
0.85
V
(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
(I > π x IT(AV)), TJ = TJ max.
0.93
0.36
r
t1
Low level value of on-state slope resistance
mΩ (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
(I > π x IT(AV)), TJ = TJ max.
r
High level value of on-state slope resistance
Maximum on-state or forward
voltage drop
0.32
1.50
t2
VTM
VFM
V
Ipk = 1500A, TJ = 25°C, tp = 10ms sine pulse
IH
IL
Maximum holding current
Typical latching current
500
mA TJ = 25°C, anode supply 12V resistive load
1000
Switching
Parameter
IRK.500..
1000
Units Conditions
di/dt
Maximum rate of rise of turned-on
current
A/µs TJ = TJ max., ITM = 400A, VDRM applied
t
Typical delay time
2.0
µs
µs
Gate current 1A, di /dt = 1A/µs
g
d
V
= 0.67% VDRM , TJ = 25°C
d
t
Typical turn-off time
200
ITM = 750A, TJ = TJ max, di/dt = -60A/µs,
q
VR = 50V, dv/dt = 20V/µs, Gate 0 V 100Ω
Document Number: 93749
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2
IRK.500.. Series
Bulletin I27401 rev. A 09/97
Blocking
Parameter
IRK.500..
1000
Units Conditions
V/µs TJ = 130°C., linear to VD = 80% VDRM
dv/dt
Maximum critical rate of rise of off-state
voltage
VINS
IRRM
IDRM
RMS isolation voltage
3000
100
V
t = 1 s
Maximum peak reverse and off-state
leakage current
mA TJ = TJ max., rated VDRM/VRRM applied
Triggering
Parameter
Maximum peak gate power
IRK.500..
Units Conditions
PGM
10
2.0
3.0
20
W
W
A
T = T max., t < 5ms
p
J J
PG(AV) Maximum peak average gate power
+ IGM Maximum peak positive gate current
+ VGM Maximum peak positive gate voltage
TJ = TJ max., f = 50Hz, d% = 50
T = T max., t < 5ms
p
J
J
V
- VGM Maximum peak negative gate voltage
5.0
V
IGT
Max. DC gate current required to trigger
DC gate voltage required to trigger
DC gate current not to trigger
200
mA TJ = 25°C Vak 12V
TJ = 25°C Vak 12V
VGT
IGD
3.0
10
V
mA TJ = TJ max.
V
VGD
DC gate voltage not to trigger
0.25
Thermal and Mechanical Specifications
Parameter
IRK.500..
- 40 to 130
-40to150
0.065
Units Conditions
°C
TJ
T
Max. junctionoperatingtemperaturerange
Max. storage temperature range
stg
RthJC Max. thermal resistance, junction to
K/W Per junction, DC operation
K/W
case
RthC-hs Max. thermal resistance, case to
heatsink
0.02
A mounting compound is recommended and the
Nm
T
Mountingtorque ± 10%SMAP to heatsink
busbartoSMAP
6-8
12-15
1500
torque should be rechecked after a period of 3 hours
to allow for the spread of the compound
wt
Approximate weight
g
Case style
SUPER MAGN-A-pak See outline table
Document Number: 93749
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3
IRK.500.. Series
Bulletin I27401 rev. A 09/97
∆RthJC Conduction
(The following table shows the increment of thermal resistance R
when devices operate at different conduction angles than DC)
thJC
Conduction angle Sinusoidal conduction Rectangular conduction Units Conditions
180°
120°
90°
0.009
0.011
0.014
0.021
0.037
0.006
0.011
0.015
0.022
0.038
K/W
TJ = TJ max.
60°
30°
Ordering Information Table
DeviceCode
IRK
T
500
-
16
1
2
3
4
1
2
3
4
-
-
-
-
Module type
Circuit configuration (See Circuit Configurations Table)
Current rating
Voltage code: Code x 100 = VRRM (See Voltage Ratings Table)
Circuit Configurations Table
IRKT
IRKH
IRKL
1
~
1
~
1
~
+
2
+
2
+
2
3
-
-
3
3
-
7(K2)
4(K1) 7(K2)
4(K1)
6(G2)
5(G1)
6(G2)
5(G1)
NOTE: To order the Optional Hardware see Bulletin I27900
Document Number: 93749
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4
IRK.500.. Series
Bulletin I27401 rev. A 09/97
Outline Table
All dimensions in millimeters (inches)
130
130
120
110
100
90
IRK.500.. Se rie s
IRK.500.. Se rie s
R
(DC ) = 0.065 K/ W
R
(DC ) = 0.065 K/W
th JC
th JC
120
110
100
90
Conduc tion Ang le
Co nd u ction Perio d
30°
60°
80
80
30°
60°
90°
120°
90°
120°
180°
70
70
180°
DC
60
60
0
100
200
300
400
500
600
0
100 200 300 400 500 600 700 800 900
Ave ra g e O n-sta te C urre nt (A)
Ave ra g e On -sta te C urre nt (A)
Fig. 2 - Current Ratings Characteristics
Fig. 1 - Current Ratings Characteristics
Document Number: 93749
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5
IRK.500.. Series
Bulletin I27401 rev. A 09/97
700
1000
900
800
700
600
500
400
300
200
100
0
DC
180°
120°
90°
60°
30°
180°
120°
90°
60°
30°
600
500
400
300
200
100
0
RMS Limit
RMS Lim it
C o nd uc tio n Perio d
Cond uc tion Angle
IRK.500.. Se rie s
Pe r Junc tio n
IRK.500.. Serie s
Pe r Junc tion
T
= 130°C
T = 130°C
J
J
0
100
200
300
400
500
0
100 200 300 400 500 600 700 800
Ave ra g e O n-sta te C urre nt (A)
Ave ra g e O n-sta te Curre nt (A)
Fig. 3 - On-state Power Loss Characteristics
Fig. 4 - On-state Power Loss Characteristics
18000
16000
14000
12000
10000
8000
16000
15000
14000
13000
12000
11000
10000
9000
Ma xim um No n Re p e titive Surge Curre nt
Ve rsus Pulse Tra in Dura tion. C ontrol
Of Co nd uc tio n Ma y Not Be Ma inta ine d .
At Any Ra te d Lo a d C ond itio n And With
Ra te d V
Ap p lie d Fo llowing Surg e .
RRM
Initia l T = 130°C
J
Initia l T = 130°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
J
No Vo lta g e Re a p plie d
Ra te d V
Re a p plie d
RRM
IRK.500.. Se rie s
Pe r Junc tion
IRK.500.. Se rie s
Pe r Junc tion
8000
6000
7000
1
10
100
0.01
0.1
1
Numb e r O f Equa l Amp litude Ha lf C yc le Curre nt Pulse s (N)
Pulse Tra in Dura tio n (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
Fig. 5 - Maximum Non-Repetitive Surge Current
750
700
650
600
550
500
450
400
350
300
250
200
150
100
50
180°
120°
90°
60°
30°
0
.
1
t
2
h
S
K
0
/
.
A
1
W
6
K
/
W
C o nd uc tio n Ang le
0
.
3
K
/
W
0
.
4
K
/
W
IRK.500.. Se rie s
Pe r Mo dule
T
= 130°C
J
0
0
100 200 300 400 500 600 700 800
20
40
60
80
100
120
Ma ximum Allow a b le Amb ie n t Te m p e ra ture (°C )
To ta l RMS O utp ut C urre n t (A)
Fig. 7 - On-state Power Loss Characteristics
Document Number: 93749
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6
IRK.500.. Series
Bulletin I27401 rev. A 09/97
3000
2500
2000
1500
1000
500
180°
(Sine )
180°
0
3
t
.
0
h
S
2
A
K
/
W
0
.
0
(Re c t)
K
/
W
W
0
.
.
0
0
5
K
/
0
8
K
/
W
0
.
1
2
K
/
W
2 x IRK.500.. Se rie s
Sing le Pha se Brid ge
C onne c te d
0
.
2
K
/
W
T
= 130°C
J
0
0
200
400
600
800
10
00
20
40
60
80
100
120
To ta l Outp ut C urre n t (A)
Ma ximum Allow a b le Am b ie nt Te mp e ra ture (°C)
Fig. 8 - On-state Power Loss Characteristics
4500
4000
3500
3000
2500
2000
1500
1000
500
R
t
h
120°
(Re c t)
S
A
=
0
.
0
1
K
/
W
-
D
0
.
e
0
3
l
t
K
a
/
W
R
0
.
0
5
K
/
W
0
.
0
8
K
/
3 x IRK.500.. Se rie s
Three Pha se Bridg e
C onne c te d
W
W
0
.
2
K
/
T = 130°C
J
0
0
250
500
750 1000 1250 15
00
20
40
60
80
100
120
To ta lO utp ut C urre n t (A)
Ma ximum Allo wa b le Am b ie nt Te mp e ra ture (°C )
Fig. 9 - On-state Power Loss Characteristics
0.1
10000
1000
100
IRK.500.. Se rie s
Pe r Junction
T = 25°C
0.01
J
T = 130°C
J
Ste a d y Sta te Va lue :
= 0.065 K/W
IRK.500.. Se rie s
Pe r Junc tio n
R
thJC
(DC Op e ra tion )
0.001
0.5
1
1.5
2
2.5
3
3.5
4
4.5
0.001
0.01
0.1
1
10
100
Insta nta ne ous On -sta te Volta g e (V)
Fig. 10 - On-state Voltage Drop Characteristics
Sq ua re Wa ve Pulse Dura tion (s)
Fig. 11 - Thermal Impedance ZthJC Characteristics
Document Number: 93749
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7
IRK.500.. Series
Bulletin I27401 rev. A 09/97
100
Rec ta ngula r ga te pulse
(1) PGM = 10W, tp = 4ms
(2) PGM = 20W, tp = 2ms
(3) PGM = 40W, tp = 1ms
(4) PGM = 60W, tp = 0.66ms
a ) Re c o m m e nd e d loa d line fo r
ra te d di/ dt : 20V, 10o hm s; tr<=1 µs
b ) Re c o m m e nd e d loa d line for
<=30% ra te d d i/ dt : 10V, 10ohm s
tr<=1 µs
10
1
(a )
(b )
(1) (2) (3) (4)
VG D
IGD
IRK.500.. Se rie s Fre q ue nc y Lim ite d b y PG(AV)
10 100
0.1
0.001
0.01
0.1
1
Insta nta ne ous G a te Curre nt (A)
Fig. 12 - Gate Characteristics
Document Number: 93749
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8
Legal Disclaimer Notice
Vishay
Notice
The products described herein were acquired by Vishay Intertechnology, Inc., as part of its acquisition of
International Rectifier’s Power Control Systems (PCS) business, which closed in April 2007. Specifications of the
products displayed herein are pending review by Vishay and are subject to the terms and conditions shown below.
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or
anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
International Rectifier®, IR®, the IR logo, HEXFET®, HEXSense®, HEXDIP®, DOL®, INTERO®, and POWIRTRAIN®
are registered trademarks of International Rectifier Corporation in the U.S. and other countries. All other product
names noted herein may be trademarks of their respective owners.
Document Number: 99901
Revision: 12-Mar-07
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1
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