IRKU105/16S90P [VISHAY]
Silicon Controlled Rectifier, 165A I(T)RMS, 105000mA I(T), 1600V V(DRM), 1600V V(RRM), 2 Element, ADD-A-PAK-7;
| 型号： | IRKU105/16S90P |
| 厂家： | 
VISHAY |
| 描述： | Silicon Controlled Rectifier, 165A I(T)RMS, 105000mA I(T), 1600V V(DRM), 1600V V(RRM), 2 Element, ADD-A-PAK-7 局域网 栅 栅极 |
| 文件： | 总9页 (文件大小：200K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Bulletin I27298 01/07
IRKU/V105..PbF SERIES
ADD-A-pakTM GEN V Power Modules
THYRISTOR/ THYRISTOR
Features
Benefits
High Voltage
Up to 1600V
Industrial Standard Package
Thick Al metal die and double stick bonding
Thick copper baseplate
UL E78996 approved
Full compatible TO-240AA
High Surge capability
105 A
Easy Mounting on heatsink
Al203 DBC insulator
3500VRMS isolatingvoltage
TOTALLYLEAD-FREE
Heatsink grounded
Mechanical Description
The electrical terminals are secured against axial pull-
out: they are fixed to the module housing via a click-stop
feature already tested and proved as reliable on other IR
modules.
The Generation V of Add-A-pak module combine the
excellent thermal performance obtained by the usage
of Direct Bonded Copper substrate with superior me-
chanical ruggedness, thanks to the insertion of a solid
Copper baseplate at the bottom side of the device.
The Cu baseplate allow an easier mounting on the
majority of heatsink with increased tolerance of sur-
face roughness and improve thermal spread.
The Generation V of AAP module is manufactured
without hard mold, eliminating in this way any possible
direct stress on the leads.
Electrical Description
These modules are intended for general purpose high
voltage applications such as high voltage regulated
power supplies, lighting circuits, temperature and motor
speed control circuits, UPS and battery charger.
Major Ratings and Characteristics
Parameters
IT(AV) @85°C
Values
105
Units
A
IT(RMS)
165
1785
A
A
A
ITSM @50Hz
@60Hz
1870
2
2
I t @50Hz
15.91
KA s
2
@60Hz
14.52
KA s
2
2
I √t
159.1
KA √s
VRRM range
TSTG
400to1600
- 40 to 125
-40to130
V
oC
oC
TJ
Document Number: 94481
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1
IRKU/V105..P Series
Bulletin I27298 01/07
ELECTRICAL SPECIFICATIONS
Voltage Ratings
VRRM , maximum
repetitive
peak reverse voltage peak reverse voltage
VRSM , maximum
non-repetitive
VDRM , max. repetitive
peak off-state voltage,
gate open circuit
IRRM
IDRM
130°C
Voltage
Type number
Code
-
V
V
V
mA
20
04
400
500
400
IRKU/V105
08
12
16
800
900
800
1200
1600
1300
1700
1200
1600
On-state Conduction
Parameters
IRKU/V105
105
Units
Conditions
IT(AV) Max. average on-state
current
180o conduction, half sine wave,
TC =85oC
A
IT(RMS Max. RMS on-state
DC
165
77
)
current.
@TC
°C
ITSM Max. peak, one cycle
non-repetitive on-state
current
1785
1870
1500
1570
2000
2100
t=10ms No voltage
Sinusoidal
half wave,
InitialTJ =TJ max.
t=8.3ms reapplied
t=10ms 100%VRRM
t=8.3ms reapplied
t=10ms TJ =25oC,
A
t=8.3ms no voltage reapplied
I2t
Max. I2t for fusing
15.91
14.52
11.25
10.27
20.00
18.30
t=10ms No voltage
t=8.3ms reapplied
InitialTJ =TJ max.
t=10ms 100%VRRM
t=8.3ms reapplied
t=10ms TJ =25oC,
KA2s
t=8.3ms no voltage reapplied
I2√t
Max. I2√t for fusing (1)
159.1
0.80
0.85
2.37
2.25
KA2√s
t=0.1to10ms,no voltage reappl.,TJ=TJ max.
Low level (3)
VT(TO) Max. value of threshold
voltage (2)
V
TJ = TJ max
High level (4)
r
Max. value of on-state
slope resistance (2)
Low level (3)
TJ = TJ max
High level (4)
t
mΩ
VTM Max. peak on-state
voltage
ITM=πxIT(AV)
TJ = 25°C
1.64
V
IFM=πxIF(AV)
di/dt Max. non-repetitive rate
of rise of turned on
current
TJ = 25oC, from 0.67 VDRM
,
150
200
400
A/μs
ITM =π x IT(AV), I = 500mA,
g
t < 0.5 μs, t > 6 μs
p
r
IH
Max. holding current
TJ =25oC,anodesupply=6V,
resistive load, gate open circuit
mA
IL
Max. latching current
TJ =25oC, anodesupply=6V,resistiveload
2
(1) I2t for time t = I2√t x √t .
(3) 16.7% x π x IAV < I < π x IAV
(2)Averagepower=VT(TO) x IT(AV) +rt x(IT(RMS))
(4) I > π x IAV
x
x
Document Number: 94481
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2
IRKU/V105..P Series
Bulletin I27298 01/07
Triggering
Parameters
IRK.U/V105
Units
Conditions
PGM Max.peakgatepower
12
3
W
A
PG(AV) Max.averagegatepower
IGM
Max.peakgatecurrent
3
-VGM Max. peaknegativegatevoltage
10
VGT Max.gatevoltage
required to trigger
4.0
2.5
V
TJ =-40°C
TJ =25°C
Anodesupply=6V
resistive load
1.7
270
150
80
TJ =125°C
TJ =-40°C
TJ =25°C
IGT
Max.gatecurrent
required to trigger
Anodesupply=6V
resistive load
mA
TJ =125°C
TJ=125oC,
ratedVDRM applied
TJ=125oC,
ratedVDRM applied
VGD Max.gatevoltage
thatwillnottrigger
0.25
6
V
IGD
Max.gatecurrent
that will not trigger
mA
Blocking
Parameters
IRKU/V105
20
Units
mA
Conditions
IRRM Max. peak reverse and
IDRM off-state leakage current
at VRRM, VDRM
TJ = 130oC, gate open circuit
VINS RMS isolation voltage
2500 (1 min)
3500 (1 sec)
50 Hz, circuit to base, all terminals
shorted
V
dv/dt Max. critical rate of rise
of off-state voltage (5)
TJ = 130oC, linear to 0.67 VDRM
gate open circuit
,
500
V/μs
(5) Available with dv/dt = 1000V/μs, to complete code add S90 i.e. IRKU105/16AS90.
Thermal and Mechanical Specifications
Parameters
IRKU/V105
Units
°C
Conditions
TJ
T
Junction operating temperature
range
- 40 to 130
Storage temperature range
-40to125
0.135
stg
RthJC Max. internalthermalresistance,
junctiontocase
Per module, DC operation
K/W
RthCS Typical thermal resistance
case to heatsink
Mounting surface flat, smooth and greased
0.1
A mounting compound is recommended
and the torque should be rechecked after
a period of 3 hours to allow for the
spread of the compound
T
Mounting torque ± 10%
to heatsink
busbar
Approximateweight
Casestyle
5
3
Nm
wt
110(4)
g(oz)
TO-240AA
JEDEC
ΔR Conduction (per Junction)
(The following table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC)
Sine half wave conduction
Rect. wave conduction
Devices
Units
°C/W
180o
0.04
120o
90o
60o
30o
180o
0.03
120o
90o
60o
30o
IRKU/V105
0.05
0.06
0.08
0.12
0.05
0.06
0.08
0.12
Document Number: 94481
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3
IRKU/V105..P Series
Bulletin I27298 01/07
Ordering Information Table
Device Code
IRK.106 types
With no auxiliary cathode
IRK
U
105
/
16 S90
P
1
5
6
2
3
4
1
2
3
4
5
-
-
-
-
-
Module type
Circuit configuration (See Circuit Configuration table below)
Current code * *
* * Available with no auxiliary cathode.
To specify change:
105 to 106
Voltage code (See Voltage Ratings table)
dv/dtcode:
S90 = dv/dt 1000 V/μs
e.g. : IRKU106/16P etc.
No letter = dv/dt 500 Vμs
6
-
P = Lead-Free
OutlineTable
Dimensions are in millimeters and [inches]
IRKU
IRKV
(1)
-
(1)
+
+
(2)
-
(2)
-
(3)
+
(3)
G1
(4) (5)
K2 G2
(7)
K1
G1 K1
(4) (5)
K2 G2
(7)
(6)
(6)
NOTE: To order the Optional Hardware see Bulletin I27900
Document Number: 94481
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4
IRKU/V105..P Series
Bulletin I27298 01/07
130
120
110
100
90
130
120
110
100
90
IRK.105.. Series
(DC) = 0.27 K/W
IRK.105.. Series
R
R
(DC) = 0.27 K/ W
thJC
thJC
Conduction Angle
Conduction Period
30°
40
30°
60°
60
60°
90°
90°
80
80
120°
180°
120°
DC
180°
70
70
0
20
80
100 120
0
20 40 60 80 100 120 140 160 180
Average On-state Current (A)
Average On-state Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
200
180
160
140
120
100
80
160
140
120
100
80
180°
120°
90°
60°
30°
DC
180°
120°
90°
60°
30°
RM S Li m it
RM S Lim i t
Conduction Period
60
Conduction Angle
60
40
IRK.105.. Series
Per Junction
IRK.105.. Series
Per Junction
T = 130°C
40
20
T = 130°C
20
J
J
0
0
0
20 40 60 80 100 120 140 160 180
Average On-state Current (A)
0
20
40
60
80
100 120
Average On-state Current (A)
Fig. 3 - On-state Power Loss Characteristics
Fig. 4 - On-state Power Loss Characteristics
1600
1500
1400
1300
1200
1100
1000
900
1800
1600
1400
1200
1000
800
Maximum Non Repetitive Surge Current
VersusPulse Train Duration. Control
Of Conduction May Not Be Maintained.
At Any Rated Load Condition And With
Rated V
Applied Following Surge.
RRM
Initial T = 130°C
J
Initial T = 130°C
@60 Hz 0.0083 s
@50 Hz 0.0100 s
J
No Voltage Reapplied
Rated V
Reapplied
RRM
IRK.105.. Series
Per Junction
IRK.105.. Series
Per Junc tion
800
600
700
1
10
100
0.01
0.1
Pulse Train Duration (s)
1
Number Of Equal Amplitude Half Cycle Current Pulses(N)
Fig. 5 - Maximum Non-Repetitive Surge Current
Document Number: 94481
Fig. 6 - Maximum Non-Repetitive Surge Current
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5
IRKU/V105..P Series
Bulletin I27298 01/07
600
500
400
300
200
100
0
R
180°
(Sine)
180°
=
0
.
1
K
/
W
-
(Rect)
D
e
l
t
a
R
0.
3
K
/
W
2 x IRK.105.. Series
Single Phase Bridge
Connected
T
= 130° C
J
0
40
80
120
160
200 20
40 60 80 100 120 140
Total Output Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 7 - On-state Power Loss Characteristics (Single Phase Bridge IRKU+IRKV)
900
800
700
600
500
400
300
200
100
0
R
60°
(Rect)
=
0
.
1
K
/
W
I
o
-
D
e
l
t
a
R
0
.
5
3 x IRK.105.. Series
6-Pulse Midpoint
Connection Bridge
K
/
W
1
K
/
W
T
= 130°C
J
0
50 100 150 200 250 300 350 400 450 20 40 60
80 100 120 140
Total Output Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 8 - On-state Power Loss Characteristics
1000
100
10
T = 25°C
J
T = 130°C
J
IRK.105.. Series
Per Junction
1
0
0.5
InstantaneousOn-state Voltage (V)
Fig. 9 - On-state Voltage Drop Characteristics
1
1.5
2
2.5
3
3.5
Document Number: 94481
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6
IRKU/V105..P Series
Bulletin I27298 01/07
140
120
100
80
700
600
500
400
300
200
100
I
= 200 A
100 A
TM
IRK.105.. Series
I
= 200 A
100 A
IRK.105.. Series
TM
T = 125 °C
J
T = 125 °C
J
50 A
20 A
10 A
50 A
20 A
10 A
60
40
20
10 20 30 40 50 60 70 80 90 100
10 20 30 40 50 60 70 80 90 100
Rate Of Fall Of On-state Current - di/dt (A/µs)
Rate Of Fall Of Forward Current - di/ dt (A/ µs)
Fig. 10 - Recovery Charge Characteristics
Fig. 11 - Recovery Current Characteristics
1
Steady State Value:
R
= 0.27 K/W
thJC
(DC Operation)
0.1
IRK.105.. Series
Per Junction
0.01
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 12 - Thermal Impedance ZthJC Characteristics
100
10
1
Rectangular gate pulse
(1) PGM = 200 W, tp = 300 µs
a)Recommended load line for
rated di/dt: 20 V, 20 ohms
tr = 0.5 µs, tp >= 6 µs
b)Recommended load line for
<= 30%rated di/dt: 15 V, 40 ohms
tr = 1µs, tp >= 6µs
(2) PGM = 60 W, tp = 1 ms
(3) PGM = 30 W, tp = 2 ms
(4) PGM = 12 W, tp = 5 ms
(a)
(b)
(3)
(4)
(2)
(1)
VGD
IGD
0.01
IRK.105.. Series
Frequency Limited by PG(AV)
10 100 1000
0.1
0.001
0.1
1
InstantaneousGate Current (A)
Fig. 13- Gate Characteristics
Document Number: 94481
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7
IRKU/V105..P Series
Bulletin I27298 01/07
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial Level and Lead-Free.
Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7309
01/07
Document Number: 94481
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8
Legal Disclaimer Notice
Vishay
Notice
The products described herein were acquired by Vishay Intertechnology, Inc., as part of its acquisition of
International Rectifier’s Power Control Systems (PCS) business, which closed in April 2007. Specifications of the
products displayed herein are pending review by Vishay and are subject to the terms and conditions shown below.
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or
anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
International Rectifier®, IR®, the IR logo, HEXFET®, HEXSense®, HEXDIP®, DOL®, INTERO®, and POWIRTRAIN®
are registered trademarks of International Rectifier Corporation in the U.S. and other countries. All other product
names noted herein may be trademarks of their respective owners.
Document Number: 99901
Revision: 12-Mar-07
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1
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