IRLZ24SPBF [VISHAY]
TRANSISTOR 17 A, 60 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, SMD-220, 3 PIN, FET General Purpose Power;
| 型号： | IRLZ24SPBF |
| 厂家： | 
VISHAY |
| 描述： | TRANSISTOR 17 A, 60 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, SMD-220, 3 PIN, FET General Purpose Power 开关 晶体管 |
| 文件： | 总11页 (文件大小：356K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IRLZ24S, IRLZ24L, SiHLZ24S, SiHLZ24L
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
• Halogen-free According to IEC 61249-2-21
Definition
• Surface Mount
• Available in Tape and Reel
60
RDS(on) ()
VGS = 5 V
0.10
• Dynamic dV/dt Rating
Qg (Max.) (nC)
18
4.5
• Logic-Level Gate Drive
Q
Q
gs (nC)
gd (nC)
• RDS (on) Specified at VGS = 4 V and 5 V
• 175°C Operating Temperature
• Fast Switching
12
Configuration
Single
• Compliant to RoHS Directive 2002/95/EC
D
DESCRIPTION
D2PAK (TO-263)
I2PAK (TO-262)
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
G
G
The D2PAK is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible
on-resistance in any existing surface mount package. The
D
S
D
S
G
S
D2PAK is suitable for high current applications because of
its low internal connection resistance and can dissipate up
to 2.0 W in a typical surface mount application.
The through-hole version (IRLZ24L, SiHLZ24L) is available
for low-profile application.
N-Channel MOSFET
ORDERING INFORMATION
Package
D2PAK (TO-263)
I2PAK (TO-262)
SiHLZ24L-GE3
IRLZ24LPbF
Lead (Pb)-free and Halogen-free
SiHLZ24S-GE3
-
-
Lead (Pb)-free
SiHLZ24L-E3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
60
10
V
TC = 25 °C
17
Continuous Drain Current
VGS at 5 V
ID
TC = 100 °C
12
A
Pulsed Drain Currenta
IDM
68
Linear Derating Factor
0.40
0.025
110
W/°C
mJ
Linear Derating Factor (PCB Mount)e
Single Pulse Avalanche Energyb
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount)e
Peak Diode Recovery dV/dtc
EAS
PD
T
C = 25 °C
60
W
TA = 25 °C
3.7
dV/dt
4.5
V/ns
°C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
TJ, Tstg
- 55 to + 175
300d
for 10 s
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 25 V, starting TJ = 25 °C, L = 444 μH, Rg = 25 , IAS = 17 A (see fig. 12).
c. ISD 17 A, dI/dt 140 A/μs, VDD VDS, TJ 175 °C.
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material)
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 90416
S11-1044-Rev. C, 30-May-11
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRLZ24S, IRLZ24L, SiHLZ24S, SiHLZ24L
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYP.
MAX.
UNIT
Maximum Junction-to-Ambient
RthJA
-
62
Maximum Junction-to-Ambient
(PCB Mount)a
RthJA
RthJC
-
-
40
°C/W
Maximum Junction-to-Case (Drain)
2.5
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX. UNIT
Static
Drain-Source Breakdown Voltage
VDS
VDS/TJ
VGS(th)
IGSS
VGS = 0, ID = 250 μA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 μA
60
-
-
-
V
V/°C
V
VDS Temperature Coefficient
0.060
-
Gate-Source Threshold Voltage
Gate-Source Leakage
1.0
-
-
-
-
-
-
-
-
2.0
100
25
VGS
VDS = 60 V, VGS = 0 V
DS = 48 V, VGS = 0 V, TJ = 150 °C
=
10 V
nA
-
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
IDSS
μA
V
-
250
0.10
0.14
-
VGS = 5 V
VGS = 4 V
ID = 10 Ab
ID = 8.5 Ab
-
RDS(on)
gfs
-
Forward Transconductance
Dynamic
VDS = 25 V, ID = 10 Ab
7.3
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Ciss
Coss
Crss
Qg
-
-
-
-
-
-
-
-
-
-
870
360
53
-
-
-
VGS = 0 V,
DS = 25 V,
f = 1.0 MHz, see fig. 5
V
pF
nC
-
18
4.5
12
-
ID = 17 A, VDS = 48 V,
see fig. 6 and 13b
Qgs
Qgd
td(on)
tr
V
GS = 5 V
-
-
11
110
23
41
-
V
DD = 30 V, ID = 17 A,
ns
Rg = 9 , RD = 1.7 , see fig. 10b
Turn-Off Delay Time
Fall Time
td(off)
tf
-
-
Dynamic
D
Between lead,
Internal Drain Inductance
LD
LS
-
-
4.5
7.5
-
-
6 mm (0.25") from
package and center of
die contact
nH
A
G
Internal Source Inductance
S
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
D
MOSFET symbol
showing the
integral reverse
p - n junction diode
IS
-
-
-
-
17
68
G
Pulsed Diode Forward Currenta
ISM
S
Body Diode Voltage
VSD
trr
TJ = 25 °C, IS = 17 A, VGS = 0 Vb
-
-
-
-
1.5
260
1.5
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
110
0.49
ns
μC
TJ = 25 °C, IF = 17 A, dI/dt = 100 A/μsb
Qrr
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 μs; duty cycle 2 %.
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Document Number: 90416
S11-1044-Rev. C, 30-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRLZ24S, IRLZ24L, SiHLZ24S, SiHLZ24L
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Fig. 1 - Typical Output Characteristics, TC = 25 °C
Fig. 3 - Typical Transfer Characteristics
Fig. 2 - Typical Output Characteristics, TC = 175 °C
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 90416
S11-1044-Rev. C, 30-May-11
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3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRLZ24S, IRLZ24L, SiHLZ24S, SiHLZ24L
Vishay Siliconix
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 8 - Maximum Safe Operating Area
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Document Number: 90416
S11-1044-Rev. C, 30-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRLZ24S, IRLZ24L, SiHLZ24S, SiHLZ24L
Vishay Siliconix
RD
VDS
VGS
D.U.T.
Rg
+
V
-
DD
5 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
Fig. 10a - Switching Time Test Circuit
VDS
90 %
10 %
VGS
Fig. 9 - Maximum Drain Current vs. Case Temperature
td(on) tr
td(off) tf
Fig. 10b - Switching Time Waveforms
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
Document Number: 90416
S11-1044-Rev. C, 30-May-11
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5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRLZ24S, IRLZ24L, SiHLZ24S, SiHLZ24L
Vishay Siliconix
L
VDS
VDS
Vary tp to obtain
required IAS
tp
VDD
Rg
D.U.T
IAS
+
-
VDD
VDS
5 V
0.01 W
tp
IAS
Fig. 12a - Unclamped Inductive Test Circuit
Fig. 12b - Unclamped Inductive Waveforms
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Current regulator
Same type as D.U.T.
50 kΩ
QG
5 V
12 V
0.2 µF
0.3 µF
QGS
QGD
+
-
VDS
D.U.T.
VG
VGS
3 mA
Charge
IG
ID
Current sampling resistors
Fig. 13a - Basic Gate Charge Waveform
Fig. 13b - Gate Charge Test Circuit
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Document Number: 90416
S11-1044-Rev. C, 30-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRLZ24S, IRLZ24L, SiHLZ24S, SiHLZ24L
Vishay Siliconix
Peak Diode Recovery dV/dt Test Circuit
+
Circuit layout considerations
• Low stray inductance
• Ground plane
D.U.T.
• Low leakage inductance
current transformer
-
+
-
-
+
Rg
• dV/dt controlled by Rg
• Driver same type as D.U.T.
• ISD controlled by duty factor “D”
• D.U.T. - device under test
+
-
VDD
Driver gate drive
P.W.
P.W.
D =
Period
Period
VGS = 10 Va
D.U.T. lSD waveform
D.U.T. VDS waveform
Reverse
recovery
current
Body diode forward
current
dI/dt
Diode recovery
dV/dt
VDD
Re-applied
voltage
Body diode forward drop
Inductor current
ISD
Ripple ≤ 5 %
Note
a. VGS = 5 V for logic level devices
Fig. 14 - For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?90416.
Document Number: 90416
S11-1044-Rev. C, 30-May-11
www.vishay.com
7
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
Vishay Siliconix
TO-252AA (HIGH VOLTAGE)
E
b3
E1
L3
D1
D
H
L4
b2
b
A
c2
e
A1
L
L1
c
θ
L2
MILLIMETERS
INCHES
DIM.
E
MIN.
MAX.
6.73
1.77
MIN.
0.252
0.055
MAX.
0.265
0.070
6.40
1.40
L
L1
L2
L3
L4
D
2.743 REF
0.508 BSC
0.108 REF
0.020 BSC
0.89
0.64
6.00
9.40
0.64
0.77
5.21
1.27
1.01
6.22
10.40
0.88
1.14
5.46
0.035
0.025
0.236
0.370
0.025
0.030
0.205
0.050
0.040
0.245
0.409
0.035
0.045
0.215
H
b
b2
b3
e
2.286 BSC
0.090 BSC
A
2.20
0.00
0.45
0.45
5.30
4.40
0'
2.38
0.13
0.60
0.58
-
0.087
0.000
0.018
0.018
0.209
0.173
0'
0.094
0.005
0.024
0.023
-
A1
c
c2
D1
E1
θ
-
-
10'
10'
ECN: S-81965-Rev. A, 15-Sep-08
DWG: 5973
Notes
1. Package body sizes exclude mold flash, protrusion or gate burrs. Mold flash, protrusion or gate burrs shall not exceed 0.10 mm per side.
2. Package body sizes determined at the outermost extremes of the plastic body exclusive of mold flash, gate burrs and interlead flash, but
including any mismatch between the top and bottom of the plastic body.
3. The package top may be smaller than the package bottom.
4. Dimension "b" does not include dambar protrusion. Allowable dambar protrusion shall be 0.10 mm total in excess of "b" dimension at maximum
material condition. The dambar cannot be located on the lower radius of the foot.
Document Number: 91344
Revision: 15-Sep-08
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1
Package Information
Vishay Siliconix
TO-251AA (HIGH VOLTAGE)
4
3
A
E1
E
Thermal PAD
A
4
0.010
M
A B
C
0.25
c2
b4
L2
4
A
θ1
θ2
D1
4
B
C
3
Seating
plane
5
C
B
C
L3
L1
(Datum A)
L
B
A
A1
3 x b2
3 x b
c
View A - A
M
0.010
C A B
0.25
2 x e
Base
metal
5
Plating
(c)
b1, b3
Lead tip
5
c1
(b, b2)
Section B - B and C - C
MILLIMETERS
INCHES
MILLIMETERS
INCHES
MAX.
DIM.
A
MIN.
2.18
0.89
0.64
0.65
0.76
0.76
4.95
0.46
0.41
0.46
5.97
MAX.
2.39
1.14
0.89
0.79
1.14
1.04
5.46
0.61
0.56
0.86
6.22
MIN.
0.086
0.035
0.025
0.026
0.030
0.030
0.195
0.018
0.016
0.018
0.235
MAX.
0.094
0.045
0.035
0.031
0.045
0.041
0.215
0.024
0.022
0.034
0.245
DIM.
D1
E
MIN.
5.21
6.35
4.32
MAX.
MIN.
0.205
0.250
0.170
-
6.73
-
-
0.265
-
A1
b
E1
e
b1
b2
b3
b4
c
2.29 BSC
2.29 BSC
L
8.89
1.91
0.89
1.14
0'
9.65
2.29
1.27
1.52
15'
0.350
0.075
0.035
0.045
0'
0.380
0.090
0.050
0.060
15'
L1
L2
L3
θ1
θ2
c1
c2
D
25'
35'
25'
35'
ECN: S-82111-Rev. A, 15-Sep-08
DWG: 5968
Notes
1. Dimensioning and tolerancing per ASME Y14.5M-1994.
2. Dimension are shown in inches and millimeters.
3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.13 mm (0.005") per side. These dimensions are measured at the
outermost extremes of the plastic body.
4. Thermal pad contour optional with dimensions b4, L2, E1 and D1.
5. Lead dimension uncontrolled in L3.
6. Dimension b1, b3 and c1 apply to base metal only.
7. Outline conforms to JEDEC outline TO-251AA.
Document Number: 91362
Revision: 15-Sep-08
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Package Information
Vishay Siliconix
I2PAK (TO-262) (HIGH VOLTAGE)
A
B
A
(Datum A)
E
c2
A
E
L1
D
Seating
plane
D1
C
C
L2
B
B
L
A
c
E1
3 x b2
3 x b
A1
Section A - A
Base
metal
2 x e
b1, b3
Plating
M
M
B
0.010
A
c1
c
(b, b2)
Lead tip
Section B - B and C - C
Scale: None
MILLIMETERS
INCHES
MAX.
MILLIMETERS
INCHES
MAX.
DIM.
A
MIN.
MAX.
4.83
3.02
0.99
0.89
1.78
1.73
0.74
0.58
1.65
MIN.
0.160
0.080
0.020
0.020
0.045
0.045
0.015
0.015
0.045
DIM.
MIN.
MAX.
MIN.
0.330
0.270
0.380
0.245
4.06
2.03
0.51
0.51
1.14
1.14
0.38
0.38
1.14
0.190
0.119
0.039
0.035
0.070
0.068
0.029
0.023
0.065
D
D1
E
8.38
6.86
9.65
6.22
9.65
0.380
A1
b
-
10.67
-
-
0.420
-
b1
b2
b3
c
E1
e
2.54 BSC
0.100 BSC
L
13.46
-
14.10
1.65
3.71
0.530
-
0.555
0.065
0.146
L1
L2
c1
c2
3.56
0.140
ECN: S-82442-Rev. A, 27-Oct-08
DWG: 5977
Notes
1. Dimensioning and tolerancing per ASME Y14.5M-1994.
2. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm per side. These dimensions are measured at the outmost
extremes of the plastic body.
3. Thermal pad contour optional within dimension E, L1, D1, and E1.
4. Dimension b1 and c1 apply to base metal only.
Document Number: 91367
Revision: 27-Oct-08
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Legal Disclaimer Notice
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Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding
statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.
Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document
or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
Document Number: 91000
1
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