IRLZ34SPBF [VISHAY]
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| 型号： | IRLZ34SPBF |
| 厂家： | 
VISHAY |
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IRLZ34, SiHLZ34
Vishay Siliconix
Power MOSFET
FEATURES
• Dynamic dV/dt Rating
PRODUCT SUMMARY
VDS (V)
60
Available
• Logic-Level Gate Drive
RDS(on) (Ω)
VGS = 5.0 V
0.050
RoHS*
• RDS(on) Specified at VGS = 4 V and 5 V
• 175 °C Operating Temperature
• Fast Switching
COMPLIANT
Qg (Max.) (nC)
35
7.1
Q
Q
gs (nC)
gd (nC)
25
• Ease of Paralleling
Configuration
Single
• Simple Drive Requirements
• Compliant to RoHS Directive 2002/95/EC
D
TO-220AB
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-220AB package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220AB contribute to its
wide acceptance throughout the industry.
G
S
D
S
N-Channel MOSFET
G
ORDERING INFORMATION
Package
TO-220AB
IRLZ34PbF
SiHLZ34-E3
IRLZ34
Lead (Pb)-free
SnPb
SiHLZ34
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
Gate-Source Voltage
VDS
60
V
VGS
10
T
C = 25 °C
30
21
Continuous Drain Current
VGS at 5 V
ID
T
C = 100 °C
A
Pulsed Drain Currenta
IDM
110
Linear Derating Factor
Single Pulse Avalanche Energyb
0.59
128
W/°C
mJ
EAS
PD
Maximum Power Dissipation
Peak Diode Recovery dV/dtc
T
C = 25 °C
for 10 s
88
W
dV/dt
TJ, Tstg
4.5
V/ns
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
- 55 to + 175
300d
10
°C
lbf · in
N · m
Mounting Torque
6-32 or M3 screw
1.1
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 25 V, Starting TJ = 25 °C, L = 285 μH, Rg = 25 Ω, IAS = 30 A (see fig. 12).
c. ISD ≤ 30 A, dI/dt ≤ 200 A/μs, VDD ≤ VDS, TJ ≤ 175 °C.
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91327
S11-0520-Rev. C, 21-Mar-11
www.vishay.com
1
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRLZ34, SiHLZ34
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYP.
MAX.
62
UNIT
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
RthJA
RthCS
RthJC
-
0.50
-
-
°C/W
1.7
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
VDS
ΔVDS/TJ
VGS(th)
IGSS
VGS = 0 V, ID = 250 μA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 μA
60
-
-
-
-
V
V/°C
V
0.070
1.0
-
-
-
-
-
-
-
-
2.0
100
25
VGS
VDS = 60 V, VGS = 0 V
VDS = 48 V, VGS = 0 V, TJ = 150 °C
=
10 V
nA
-
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
IDSS
μA
-
250
0.050
VGS = 5.0 V
VGS = 4.0 V
ID = 18 Ab
ID = 15 Ab
-
RDS(on)
gfs
Ω
-
0.070
-
Forward Transconductance
Dynamic
VDS = 25 V, ID = 18 Ab
12
S
VGS = 0 V,
VDS = 25 V,
Input Capacitance
Ciss
Coss
Crss
-
-
-
1600
660
-
-
-
Output Capacitance
Reverse Transfer Capacitance
pF
170
f = 1.0 MHz, see fig. 5
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
Qgd
-
-
-
-
-
-
35
7.1
25
ID = 30 A, VDS = 48 V
see fig. 6 and 13b
VGS = 5.0 V
nC
Turn-On Delay Time
Rise Time
td(on)
tr
td(off)
tf
-
-
-
-
14
170
30
-
-
-
-
V
DD = 30 V, ID = 30 A
ns
Turn-Off Delay Time
Fall Time
Rg = 6.0 Ω, RD = 1.0 Ω, see fig. 10b
56
D
Between lead,
Internal Drain Inductance
Internal Source Inductance
LD
LS
-
-
4.5
7.5
-
-
6 mm (0.25") from
package and center of
die contact
nH
G
S
Drain-Source Body Diode Characteristics
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
Continuous Source-Drain Diode Current
IS
-
-
-
30
A
G
Pulsed Diode Forward Currenta
ISM
-
-
110
S
TJ = 25 °C, IS = 30 A, VGS = 0 Vb
1.6
180
1.3
V
Body Diode Voltage
VSD
trr
-
-
-
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
120
ns
μC
TJ = 25 °C, IF = 30 A, dI/dt = 100 A/μsb
Qrr
ton
0.70
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %.
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Document Number: 91327
S11-0520-Rev. C, 21-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRLZ34, SiHLZ34
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Fig. 1 - Typical Output Characteristics, TC = 25 °C
Fig. 3 - Typical Transfer Characteristics
Fig. 2 - Typical Output Characteristics, TC = 150 °C
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91327
S11-0520-Rev. C, 21-Mar-11
www.vishay.com
3
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRLZ34, SiHLZ34
Vishay Siliconix
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 6 - Typical Gate Charge vs. Drain-to-Source Voltage
Fig. 8 - Maximum Safe Operating Area
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Document Number: 91327
S11-0520-Rev. C, 21-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRLZ34, SiHLZ34
Vishay Siliconix
RD
VDS
VGS
D.U.T.
RG
+
V
-
DD
5 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
Fig. 10a - Switching Time Test Circuit
VDS
90 %
10 %
VGS
td(on) tr
td(off) tf
Fig. 9 - Maximum Drain Current vs. Case Temperature
Fig. 10b - Switching Time Waveforms
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
Document Number: 91327
S11-0520-Rev. C, 21-Mar-11
www.vishay.com
5
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRLZ34, SiHLZ34
Vishay Siliconix
L
VDS
VDS
Vary tp to obtain
required IAS
tp
VDD
D.U.T.
RG
+
-
VDD
VDS
IAS
5 V
0.01 Ω
tp
IAS
Fig. 12b - Unclamped Inductive Waveforms
Fig. 12a - Unclamped Inductive Test Circuit
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Current regulator
Same type as D.U.T.
50 kΩ
QG
5 V
12 V
0.2 µF
0.3 µF
QGS
QGD
+
-
VDS
D.U.T.
VG
VGS
3 mA
Charge
IG
ID
Current sampling resistors
Fig. 13a - Basic Gate Charge Waveform
Fig. 13b - Gate Charge Test Circuit
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Document Number: 91327
S11-0520-Rev. C, 21-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRLZ34, SiHLZ34
Vishay Siliconix
Peak Diode Recovery dV/dt Test Circuit
+
Circuit layout considerations
• Low stray inductance
• Ground plane
D.U.T.
• Low leakage inductance
current transformer
-
+
-
-
+
Rg
• dV/dt controlled by Rg
• Driver same type as D.U.T.
• ISD controlled by duty factor “D”
• D.U.T. - device under test
+
-
VDD
Driver gate drive
P.W.
P.W.
D =
Period
Period
V
GS = 10 Va
D.U.T. lSD waveform
D.U.T. VDS waveform
Reverse
recovery
current
Body diode forward
current
dI/dt
Diode recovery
dV/dt
VDD
Re-applied
voltage
Body diode forward drop
Inductor current
ISD
Ripple ≤ 5 %
Note
a. VGS = 5 V for logic level devices
Fig. 14 - For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91327.
Document Number: 91327
S11-0520-Rev. C, 21-Mar-11
www.vishay.com
7
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
Vishay Siliconix
TO-220AB
A
MILLIMETERS
MIN.
INCHES
MAX.
E
DIM.
A
MAX.
4.65
1.01
1.73
0.61
15.49
10.51
2.67
5.28
1.40
6.48
2.92
14.02
3.82
3.94
3.00
MIN.
0.167
0.027
0.047
0.014
0.585
0.395
0.095
0.192
0.045
0.240
0.095
0.526
0.131
0.139
0.102
F
4.25
0.69
1.20
0.36
14.85
10.04
2.41
4.88
1.14
6.09
2.41
13.35
3.32
3.54
2.60
0.183
0.040
0.068
0.024
0.610
0.414
0.105
0.208
0.055
0.255
0.115
0.552
0.150
0.155
0.118
Ø P
b
b(1)
c
D
E
e
e(1)
F
H(1)
J(1)
L
1
3
2
L(1)
Ø P
Q
* M
ECN: X10-0416-Rev. M, 01-Nov-10
DWG: 5471
b(1)
Note
* M = 1.32 mm to 1.62 mm (dimension including protrusion)
Heatsink hole for HVM
C
b
e
J(1)
e(1)
Document Number: 71195
Revison: 01-Nov-10
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1
Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree
to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and
damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay
or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to
obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 11-Mar-11
www.vishay.com
1
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