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J108L-E3 [VISHAY]

TRANSISTOR N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-226AA, PLASTIC, TO-92, 3 PIN, FET General Purpose Small Signal;
J108L-E3
型号： J108L-E3
厂家： VISHAY    VISHAY
描述：

TRANSISTOR N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-226AA, PLASTIC, TO-92, 3 PIN, FET General Purpose Small Signal

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J/SST108 Series  
Vishay Siliconix  
N–Channel JFETs  
J108  
SST108  
SST109  
SST110  
J109  
J110  
PRODUCT SUMMARY  
Part Number  
VGS(off) (V)  
rDS(on) Max (W)  
ID(off) Typ (pA)  
tON Typ (ns)  
J/SST108  
J/SST109  
J/SST110  
–3 to –10  
–2 to –6  
8
20  
20  
20  
4
4
4
12  
18  
–0.5 to –4  
FEATURES  
BENEFITS  
APPLICATIONS  
D Low On-Resistance: J108 <8 W  
D Fast Switching—tON: 4 ns  
D Low Leakage: 20 pA  
D Low Error Voltage  
D Analog Switches  
D Choppers  
D High-Speed Analog Circuit Performance  
D Negligible “Off-Error” Excellent Accuracy  
D Good Frequency Response  
D Sample-and-Hold  
D Normally “On” Switches  
D Current Limiters  
D Low Capacitance: 11 pF  
D Low Insertion Loss  
D Eliminates Additional Buffering  
DESCRIPTION  
The J/SST108 series is designed with high-performance  
analog switching applications in mind. It features low  
on-resistance, good off-isolation, and fast switching.  
The TO-226AA (TO-92) plastic package provides a  
low-cost option. Both the J and SST series are available  
in tape-and-reel for automated assembly (see Packaging  
Information).  
For similar products packaged in  
TO-206AC (TO-52), see the 2N5432/5433/5434 data  
sheet.  
The SST108 series is comprised of surface-mount  
devices featuring the lowest rDS(on) of any TO-236  
(SOT-23) JFET device.  
TO-226AA  
(TO-92)  
TO-236  
(SOT-23)  
D
S
1
2
1
2
3
D
S
3
G
G
Top View  
SST108 (I8)*  
SST109 (I9)*  
SST110 (I0)*  
Top View  
*Marking Code for TO-236  
J108, J109, J110  
Document Number: 70231  
S-04028—Rev. E, 04-Jun-01  
www.vishay.com  
7-1  
J/SST108 Series  
Vishay Siliconix  
ABSOLUTE MAXIMUM RATINGS  
Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –25 V  
Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150_C  
a
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350 mW  
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA  
1
Lead Temperature ( / ” from case for 10 sec.) . . . . . . . . . . . . . . . . . . . 300_C  
16  
Notes  
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150_C  
a. Derate 2.8 mW/_C above 25_C  
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)  
A
Limits  
J/SST108  
J/SST109  
J/SST110  
Parameter  
Symbol  
Test Conditions  
Typa  
Min Max Min Max Min Max Unit  
Static  
Gate-Source  
Breakdown Voltage  
V
I
G
= –1 mA , V = 0 V  
–32  
–25  
–25  
–25  
(BR)GSS  
DS  
V
Gate-Source Cutoff Voltage  
V
V
= 5 V, I = 1 mA  
–3  
–10  
–3  
–2  
–6  
–3  
–0.5  
–4  
–3  
GS(off)  
DS  
D
b
Saturation Drain Current  
I
V
= 15 V, V = 0 V  
80  
40  
10  
mA  
DSS  
DS  
GS  
V
= –15 V, V = 0 V  
–0.01  
–5  
GS  
DS  
Gate Reverse Current  
Gate Operating Current  
Drain Cutoff Current  
I
GSS  
T
A
= 125_C  
I
G
–0.01  
0.02  
1.0  
V
V
= 10 V, I = 10 mA  
nA  
DG  
D
= 5 V, V = –10 V  
3
8
3
3
DS  
GS  
I
D(off)  
T
A
= 125_C  
Drain-Source  
On-Resistance  
r
V
= 0 V, V v 0.1 V  
12  
W
18  
DS(on)  
GS  
DS  
Gate-Source  
Forward Voltage  
V
I
G
= 1 mA , V = 0 V  
0.7  
V
GS(F)  
DS  
Dynamic  
Common-Source  
Forward Transconductance  
g
17  
fs  
V
= 5 V, I = 10 mA, f = 1 kHz  
D
mS  
DS  
Common-Source  
Output Conductance  
g
os  
0.6  
Drain-Source  
On-Resistance  
r
V
= 0 V, I = 0 mA , f = 1 kHz  
GS D  
W
8
12  
18  
ds(on)  
V
= 0 V  
= 0 V  
SST  
J Series  
SST  
60  
60  
11  
11  
DS  
Common-Source  
Input Capacitance  
C
V
iss  
GS  
85  
15  
85  
15  
85  
15  
f = 1 MHz  
pF  
V
= 0 V  
= –10 V  
DS  
Common-Source Reverse  
Transfer Capacitance  
C
rss  
V
GS  
J Series  
f = 1 MHz  
Equivalent Input  
Noise Voltage  
nV⁄  
√Hz  
V
= 5 V, I = 10 mA  
f = 1 kHz  
DG  
D
e
n
3.5  
Switching  
t
3
1
d(on)  
Turn-On Time  
t
r
V
= 1.5 V, V  
= 0 V  
DD  
GS(H)  
ns  
See Switching Diagram  
t
4
d(off)  
Turn-Off Time  
Notes  
t
18  
f
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.  
NIP  
b. Pulse test: PW v300 ms duty cycle v3%.  
Document Number: 70231  
S-04028—Rev. E, 04-Jun-01  
www.vishay.com  
7-2  
J/SST108 Series  
Vishay Siliconix  
TYPICAL CHARACTERISTICS (T = 25_C UNLESS OTHERWISE NOTED)  
A
On-Resistance and Drain Current  
vs. Gate-Source Cutoff Voltage  
On-Resistance vs. Drain Current  
20  
16  
12  
8
50  
40  
30  
20  
1000  
r
DS @ ID = 10 mA, VGS = 0 V  
DSS @ VDS = 15 V, VGS = 0 V  
T
A
= 25_C  
I
800  
600  
400  
200  
0
VGS(off) = –2 V  
rDS  
IDSS  
–4 V  
–8 V  
4
10  
0
0
0
–2  
–4  
–6  
–8  
–10  
1
10  
100  
VGS(off) – Gate-Source Cutoff Voltage (V)  
ID – Drain Current (mA)  
On-Resistance vs. Temperature  
Output Characteristics  
40  
100  
80  
I
r
= 10 mA  
changes X 0.7%/_C  
D
VGS(off) = –2 V  
DS  
32  
24  
16  
V
= –2 V  
GS(off)  
60  
VGS = 0 V  
–0.2 V  
40  
–4 V  
–8 V  
–0.4 V  
–0.6 V  
–0.8 V  
8
0
20  
0
–55 –35 –15  
5
25  
45  
65  
85 105 125  
0
2
4
6
8
10  
T
A
– Temperature (_C)  
VDS – Drain-Source Voltage (V)  
Turn-On Switching  
Turn-Off Switching  
5
4
30  
t
independent  
d(off)  
t approximately independent of ID  
r
VDD = 1.5 V, RG = 50 Ω  
of device V  
GS(off)  
VDD = 1.5 V, VGS(L) = –10 V  
V
= –10 V  
GS(L)  
24  
18  
12  
6
t
f
VGS off) = –2 V  
(
t
@ ID = 25 mA  
d(on)  
3
2
1
0
t
@ I = 10 mA  
D
d(on)  
VGS(off) = –8 V  
t
d(off)  
t
r
0
0
–2  
–4  
–6  
–8  
–10  
0
5
10  
15  
20  
25  
VGS(off) – Gate-Source Cutoff Voltage (V)  
ID – Drain Current (mA)  
Document Number: 70231  
www.vishay.com  
S-04028—Rev. E, 04-Jun-01  
7-3  
J/SST108 Series  
Vishay Siliconix  
TYPICAL CHARACTERISTICS (T = 25_C UNLESS OTHERWISE NOTED)  
A
Capacitance vs. Gate-Source Voltage  
Transconductance vs. Drain Current  
100  
100  
V
= –4 V  
GS(off)  
VDS = 0 V  
f = 1 MHz  
80  
T
A
= –55_C  
25_C  
60  
10  
125_C  
40  
20  
0
C
iss  
C
VDS = 5 V  
f = 1 kHz  
rss  
1
0
–4  
–8  
–12  
–16  
–20  
1
10  
100  
100 k  
100  
VGS – Gate-Source Voltage (V)  
I
– Drain Current (mA)  
D
Forward Transconductance and Output Conductance  
vs. Gate-Source Cutoff Voltage  
Noise Voltage vs. Frequency  
200  
100  
50  
40  
30  
20  
10  
0
g
V
and g @ VDS = 5 V  
os  
GS = 0 V, f = 1 kHz  
VDS = 5 V  
fs  
160  
120  
g
fs  
10  
80  
40  
0
g
os  
ID = 10 mA  
40 mA  
1
0
–2  
–4  
–6  
–8  
–10  
10  
100  
1 k  
10 k  
V
GS(off) – Gate-Source Cutoff Voltage (V)  
f – Frequency (Hz)  
Gate Leakage Current  
Common Gate Input Admittance  
100 nA  
10 nA  
1 nA  
100  
10  
T
= 125_C  
A
g
ig  
5 mA  
I =10 mA  
D
1 mA  
IGSS @ 125_C  
= 25_C  
100 pA  
10 pA  
1 pA  
5 mA  
1
T
b
ig  
A
1 mA  
10 mA  
T
V
I
= 25_C  
A
DG = 20 V  
D = 20 mA  
I
@ 25_C  
GSS  
0.1  
0
4
8
12  
16  
20  
10  
20  
50  
f – Frequency (MHz)  
V
DG – Drain-Gate Voltage (V)  
Document Number: 70231  
S-04028—Rev. E, 04-Jun-01  
www.vishay.com  
7-4  
J/SST108 Series  
Vishay Siliconix  
TYPICAL CHARACTERISTICS (T = 25_C UNLESS OTHERWISE NOTED)  
A
Common Gate Forward Admittance  
Common Gate Reverse Admittance  
100  
10  
10  
–g  
fg  
T
V
I
= 25_C  
A
DG = 20 V  
D = 20 mA  
1.0  
–g  
–b  
rg  
rg  
b
fg  
1
0.1  
T
V
= 25_C  
A
DG = 20 V  
ID = 20 mA  
0.1  
0.01  
10  
50  
100  
10  
20  
50  
100  
20  
f – Frequency (MHz)  
f – Frequency (MHz)  
Common Gate Output Admittance  
100  
T
V
= 25_C  
A
DG = 20 V  
ID = 20 mA  
10  
b
og  
g
og  
1
0.1  
10  
20  
f – Frequency (MHz)  
50  
100  
VDD  
SWITCHING TIME TEST CIRCUIT  
J/SST108  
J/SST109  
J/SST110  
RL  
VGS(L)  
–12 V  
150 W  
10 mA  
–7 V  
–5 V  
OUT  
R *  
L
150 W  
10 mA  
150 W  
10 mA  
VGS(H)  
I
D(on)  
*Non-inductive  
VGS(L)  
1 kΩ  
51 Ω  
51 Ω  
INPUT PULSE  
SAMPLING SCOPE  
VIN  
Scope  
Rise Time < 1 ns  
Fall Time < 1 ns  
Pulse Width 100 ns  
PRF 1 MHz  
Rise Time 0.4 ns  
Input Resistance 10 MW  
Input Capacitance 1.5 pF  
Document Number: 70231  
www.vishay.com  
S-04028—Rev. E, 04-Jun-01  
7-5  

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