J202-TA [VISHAY]
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| 型号： | J202-TA |
| 厂家： | 
VISHAY |
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J/SST201 Series
Vishay Siliconix
N-Channel JFETs
J201
J202
J204
SST201
SST202
SST204
PRODUCT SUMMARY
Part Number
VGS(off) (V)
V(BR)GSS Min (V)
gfs Min (mS) IDSS Min (mA)
J/SST201
J/SST202
J/SST204
−0.3 to −1.5
−0.8 to −4
−0.3 to −2
−40
−40
−25
0.5
1
0.2
0.9
0.2
0.5
FEATURES
BENEFITS
APPLICATIONS
D Low Cutoff Voltage: J201 <1.5 V
D High Input Impedance
D Full Performance from Low Voltage
D High-Gain, Low-Noise Amplifiers
Power Supply: Down to 1.5 V
D Low-Current, Low-Voltage
D Low Signal Loss/System Error
Battery-Powered Amplifiers
D Very Low Noise
D High System Sensitivity
D Infrared Detector Amplifiers
D High Gain: AV = 80 @ 20 mA
D High Quality Low-Level Signal
D Ultra High Input Impedance
Amplification
Pre-Amplifiers
DESCRIPTION
The J/SST201 series features low leakage, very low noise,
and low cutoff voltage for use with low-level power supplies.
The J/SST201 is excellent for battery powered equipment and
low current amplifiers.
are available in tape-and-reel for automated assembly (see
Packaging Information).
For similar products in TO-206AA (TO-18) packaging, see the
2N4338/4339/4340/4341 data sheet.
The J series, TO-226 (TO-92) plastic package, provides low
cost, while the SST series, TO-236 (SOT-23) package,
provides surface-mount capability. Both the J and SST series
For applications information see AN102 and AN106.
TO-226AA
(TO-92)
TO-236
(SOT-23)
1
2
D
S
D
S
1
2
3
G
G
3
Top View
SST201 (P1)*
SST202 (P2)*
SST204 (P4)*
Top View
J201
J202
J204
*Marking Code for TO-236
Document Number: 70233
S-40393—Rev. G, 15-Mar-04
www.vishay.com
1
J/SST201 Series
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . −55 to 150_C
Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40 V
a
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350 mW
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
1
Lead Temperature ( / ” from case for 10 sec.) . . . . . . . . . . . . . . . . . . . 300_C
16
Notes
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to 150_C
a. Derate 2.8 mW/_C above 25_C
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)
A
Limits
c
J/SST201
J/SST202
J/SST204
Parameter
Symbol
Test Conditions
Typa Min Max Min Max
Min
Max Unit
Static
Gate-Source
Breakdown Voltage
V
I
G
= −1 mA , V = 0 V
−40
−40
−25
(BR)GSS
DS
V
Gate-Source Cutoff Voltage
V
V
= 15 V, I = 10 nA
−0.3
−1.5
1
−0.8
−4
4.5
−0.3
−2
GS(off)
DS
D
b
Saturation Drain Current
I
V
= 15 V, V = 0 V
0.2
0.9
0.2
3
mA
pA
nA
DSS
DS
GS
V
= −20 V, V = 0 V
−2
−1
−2
2
−100
−100
−100
GS
DG
DS
Gate Reverse Current
I
GSS
T
= 125_C
A
Gate Operating Current
Drain Cutoff Current
I
G
V
= 10 V, I = 0.1 mA
D
pA
V
I
V
= 15 V, V = −5 V
DS GS
D(off)
Gate-Source Forward Voltage
V
I
= 1 mA , V = 0 V
0.7
GS(F)
G
DS
Dynamic
Common-Source
V
= 15 V, V = 0 V
GS
DS
g
0.5
1
0.5
mS
pF
fs
Forward Transconductance
f = 1 kHz
Common-Source
Input Capacitance
C
iss
4.5
1.3
6
V
V
= 15 V, V = 0 V
GS
f = 1 MHz
DS
DS
Common-Source
Reverse Transfer Capacitance
C
rss
= 10 V, V = 0 V
GS
f = 1 kHz
nV⁄
√Hz
Equivalent Input Noise Voltage
e
n
Notes
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
b. Pulse test: PW v300 ms duty cycle v3%.
NPA, NH
c. See 2N/SST5484 Series for J204 and SST204 typical characteristic curves.
Document Number: 70233
S-40393—Rev. G, 15-Mar-04
www.vishay.com
2
J/SST201 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (T = 25_C UNLESS OTHERWISE NOTED)
A
Drain Current and Transconductance
vs. Gate-Source Cutoff Voltage
Gate Leakage Current
10
5
10 nA
1 nA
I
G
@ I = 500 mA
D
IDSS @ VDS = 10 V, VGS = 0 V
g
@ VDS = 10 V, VGS = 0 V
I
D
= 100 mA
fs
f = 1 kHz
8
T
A
= 125_C
4
I
@ 125_C
GSS
100 pA
10 pA
1 pA
6
4
3
2
1
0
g
fs
I
= 500 mA
D
I
DSS
I
D
= 100 mA
@ 25_C
T
A
= 25_C
2
0
I
GSS
0.1 pA
0
−1
−2
−3
−4
−5
0
15
30
V
GS(off) − Gate-Source Cutoff Voltage (V)
V
− Drain-Gate Voltage (V)
DG
On-Resistance and Output Conductance
vs. Gate-Source Cutoff Voltage
Common-Source Forward Transconductance
vs. Drain Current
1500
10
2
V
= −1.5 V
V
= 10 V
DS
GS(off)
f = 1 kHz
g
os
1.6
1.2
1200
900
600
300
0
8
6
T
A
= −55_C
rDS
25_C
4
2
0
0.8
125_C
0.4
0
rDS @ ID = 100 mA, VGS = 0 V
g
os
@ VDS = 10 V, VGS = 0 V, f = 1 kHz
0
−1
−2
−3
−4
−5
0.01
0.1
1
V
GS(off) − Gate-Source Cutoff Voltage (V)
ID − Drain Current (mA)
Output Characteristics
Output Characteristics
400
2
VGS(off) = −0.7 V
VGS(off) = −1.5 V
VGS = 0 V
360
240
1.6
1.2
V
= 0 V
GS
−0.1 V
−0.2 V
−0.3 V
160
0.8
0.4
0
−0.6 V
−0.9 V
−0.3 V
−0.4 V
80
0
−0.5 V
−1.2 V
0
4
8
12
16
20
0
4
8
12
16
20
V
DS − Drain-Source Voltage (V)
VDS − Drain-Source Voltage (V)
Document Number: 70233
S-40393—Rev. G, 15-Mar-04
www.vishay.com
3
J/SST201 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (T = 25_C UNLESS OTHERWISE NOTED)
A
Transfer Characteristics
Transfer Characteristics
2
500
V
= −1.5 V
V
= 10 V
DS
GS(off)
V
= −0.7 V
VDS = 10 V
GS(off)
1.6
1.2
400
300
200
T
A
= −55_C
25_C
T
= −55_C
A
25_C
0.8
0.4
0
125_C
100
0
125_C
0
−0.1
−0.2
−0.3
−0.4
−0.5
0
−0.4
−0.8
−1.2
−1.6
−2
V
GS − Gate-Source Voltage (V)
V
− Gate-Source Voltage (V)
GS
Transconductance vs. Gate-Source Voltage
Transconductance vs. Gate-Source Voltage
4
1.5
VGS(off) = −1.5 V
VDS = 10 V
f = 1 kHz
VGS(off) = −0.7 V
VDS = 10 V
f = 1 kHz
3.2
2.4
1.2
0.9
0.6
T
A
= −55_C
25_C
T
A
= −55_C
25_C
1.6
0.8
0
125_C
0.3
0
125_C
0
−0.4
−0.8
−1.2
−1.6
−2
0
−0.1
−0.2
−0.3
−0.4
−0.5
V
GS − Gate-Source Voltage (V)
V
GS − Gate-Source Voltage (V)
Circuit Voltage Gain vs. Drain Current
On-Resistance vs. Drain Current
200
2000
g
R
L
fs
A
+
V
1 ) R g
os
L
160
120
1600
1200
Assume V = 15 V, V = 5 V
DD
DS
10 V
VGS(off) = −0.7 V
R
+
I
L
D
80
800
VGS(off) = −0.7 V
−1.5 V
−1.5 V
40
0
400
0
0.01
0.1
D − Drain Current (mA)
1
0.01
0.1
1
I
ID − Drain Current (mA)
Document Number: 70233
S-40393—Rev. G, 15-Mar-04
www.vishay.com
4
J/SST201 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (T = 25_C UNLESS OTHERWISE NOTED)
A
Common-Source Input Capacitance
vs. Gate-Source Voltage
Common-Source Reverse Feedback Capacitance
vs. Gate-Source Voltage
10
5
f = 1 MHz
f = 1 MHz
8
4
3
2
1
0
6
4
VDS = 0 V
VDS = 0 V
10 V
2
0
10 V
0
−4
−8
−12
−16
−20
0
−4
−8
−12
−16
−20
V
GS − Gate-Source Voltage (V)
VGS − Gate-Source Voltage (V)
Output Conductance vs. Drain Current
Equivalent Input Noise Voltage vs. Frequency
3
20
V
= −1.5 V
V
= 10 V
DS
GS(off)
VDS = 10 V
f = 1 kHz
2.4
16
ID @ 100 mA
1.8
0.8
12
8
T
= −55_C
A
25_C
VGS = 0 V
0.4
0
4
0
125_C
0.01
0.1
− Drain Current (mA)
1
10
100
1 k
10 k
100 k
I
D
f − Frequency (Hz)
Output Characteristics
Output Characteristics
300
240
1.0
0.8
VGS(off) = −0.7 V
VGS(off) = −1.5 V
VGS = 0 V
VGS = 0 V
−0.1
−0.3
−0.6
180
120
60
0.6
0.4
0.2
0
−0.2
−0.3
−0.4
−0.5
−0.9
−1.2
0
0
0.5
0
1.0
0.1
0.2
0.3
0.4
0.2
0.4
0.6
0.8
V
DS − Drain-Source Voltage (V)
VDS − Drain-Source Voltage (V)
Document Number: 70233
S-40393—Rev. G, 15-Mar-04
www.vishay.com
5
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