J202-TR5 [VISHAY]

Transistor;
J202-TR5
型号: J202-TR5
厂家: VISHAY    VISHAY
描述:

Transistor

文件: 总6页 (文件大小:96K)
中文:  中文翻译
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J/SST201 Series  
Vishay Siliconix  
N-Channel JFETs  
J201  
J202  
J204  
SST201  
SST202  
SST204  
PRODUCT SUMMARY  
Part Number  
VGS(off) (V)  
V(BR)GSS Min (V)  
gfs Min (mS) IDSS Min (mA)  
J/SST201  
J/SST202  
J/SST204  
0.3 to 1.5  
0.8 to 4  
0.3 to 2  
40  
40  
25  
0.5  
1
0.2  
0.9  
0.2  
0.5  
FEATURES  
BENEFITS  
APPLICATIONS  
D Low Cutoff Voltage: J201 <1.5 V  
D High Input Impedance  
D Full Performance from Low Voltage  
D High-Gain, Low-Noise Amplifiers  
Power Supply: Down to 1.5 V  
D Low-Current, Low-Voltage  
D Low Signal Loss/System Error  
Battery-Powered Amplifiers  
D Very Low Noise  
D High System Sensitivity  
D Infrared Detector Amplifiers  
D High Gain: AV = 80 @ 20 mA  
D High Quality Low-Level Signal  
D Ultra High Input Impedance  
Amplification  
Pre-Amplifiers  
DESCRIPTION  
The J/SST201 series features low leakage, very low noise,  
and low cutoff voltage for use with low-level power supplies.  
The J/SST201 is excellent for battery powered equipment and  
low current amplifiers.  
are available in tape-and-reel for automated assembly (see  
Packaging Information).  
For similar products in TO-206AA (TO-18) packaging, see the  
2N4338/4339/4340/4341 data sheet.  
The J series, TO-226 (TO-92) plastic package, provides low  
cost, while the SST series, TO-236 (SOT-23) package,  
provides surface-mount capability. Both the J and SST series  
For applications information see AN102 and AN106.  
TO-226AA  
(TO-92)  
TO-236  
(SOT-23)  
1
2
D
S
D
S
1
2
3
G
G
3
Top View  
SST201 (P1)*  
SST202 (P2)*  
SST204 (P4)*  
Top View  
J201  
J202  
J204  
*Marking Code for TO-236  
Document Number: 70233  
S-40393—Rev. G, 15-Mar-04  
www.vishay.com  
1
J/SST201 Series  
Vishay Siliconix  
ABSOLUTE MAXIMUM RATINGS  
Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . 55 to 150_C  
Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 V  
a
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350 mW  
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA  
1
Lead Temperature ( / ” from case for 10 sec.) . . . . . . . . . . . . . . . . . . . 300_C  
16  
Notes  
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to 150_C  
a. Derate 2.8 mW/_C above 25_C  
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)  
A
Limits  
c
J/SST201  
J/SST202  
J/SST204  
Parameter  
Symbol  
Test Conditions  
Typa Min Max Min Max  
Min  
Max Unit  
Static  
Gate-Source  
Breakdown Voltage  
V
I
G
= 1 mA , V = 0 V  
40  
40  
25  
(BR)GSS  
DS  
V
Gate-Source Cutoff Voltage  
V
V
= 15 V, I = 10 nA  
0.3  
1.5  
1
0.8  
4  
4.5  
0.3  
2  
GS(off)  
DS  
D
b
Saturation Drain Current  
I
V
= 15 V, V = 0 V  
0.2  
0.9  
0.2  
3
mA  
pA  
nA  
DSS  
DS  
GS  
V
= 20 V, V = 0 V  
2  
1  
2  
2
100  
100  
100  
GS  
DG  
DS  
Gate Reverse Current  
I
GSS  
T
= 125_C  
A
Gate Operating Current  
Drain Cutoff Current  
I
G
V
= 10 V, I = 0.1 mA  
D
pA  
V
I
V
= 15 V, V = 5 V  
DS GS  
D(off)  
Gate-Source Forward Voltage  
V
I
= 1 mA , V = 0 V  
0.7  
GS(F)  
G
DS  
Dynamic  
Common-Source  
V
= 15 V, V = 0 V  
GS  
DS  
g
0.5  
1
0.5  
mS  
pF  
fs  
Forward Transconductance  
f = 1 kHz  
Common-Source  
Input Capacitance  
C
iss  
4.5  
1.3  
6
V
V
= 15 V, V = 0 V  
GS  
f = 1 MHz  
DS  
DS  
Common-Source  
Reverse Transfer Capacitance  
C
rss  
= 10 V, V = 0 V  
GS  
f = 1 kHz  
nV⁄  
Hz  
Equivalent Input Noise Voltage  
e
n
Notes  
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.  
b. Pulse test: PW v300 ms duty cycle v3%.  
NPA, NH  
c. See 2N/SST5484 Series for J204 and SST204 typical characteristic curves.  
Document Number: 70233  
S-40393—Rev. G, 15-Mar-04  
www.vishay.com  
2
J/SST201 Series  
Vishay Siliconix  
TYPICAL CHARACTERISTICS (T = 25_C UNLESS OTHERWISE NOTED)  
A
Drain Current and Transconductance  
vs. Gate-Source Cutoff Voltage  
Gate Leakage Current  
10  
5
10 nA  
1 nA  
I
G
@ I = 500 mA  
D
IDSS @ VDS = 10 V, VGS = 0 V  
g
@ VDS = 10 V, VGS = 0 V  
I
D
= 100 mA  
fs  
f = 1 kHz  
8
T
A
= 125_C  
4
I
@ 125_C  
GSS  
100 pA  
10 pA  
1 pA  
6
4
3
2
1
0
g
fs  
I
= 500 mA  
D
I
DSS  
I
D
= 100 mA  
@ 25_C  
T
A
= 25_C  
2
0
I
GSS  
0.1 pA  
0
1  
2  
3  
4  
5  
0
15  
30  
V
GS(off) Gate-Source Cutoff Voltage (V)  
V
Drain-Gate Voltage (V)  
DG  
On-Resistance and Output Conductance  
vs. Gate-Source Cutoff Voltage  
Common-Source Forward Transconductance  
vs. Drain Current  
1500  
10  
2
V
= 1.5 V  
V
= 10 V  
DS  
GS(off)  
f = 1 kHz  
g
os  
1.6  
1.2  
1200  
900  
600  
300  
0
8
6
T
A
= 55_C  
rDS  
25_C  
4
2
0
0.8  
125_C  
0.4  
0
rDS @ ID = 100 mA, VGS = 0 V  
g
os  
@ VDS = 10 V, VGS = 0 V, f = 1 kHz  
0
1  
2  
3  
4  
5  
0.01  
0.1  
1
V
GS(off) Gate-Source Cutoff Voltage (V)  
ID Drain Current (mA)  
Output Characteristics  
Output Characteristics  
400  
2
VGS(off) = 0.7 V  
VGS(off) = 1.5 V  
VGS = 0 V  
360  
240  
1.6  
1.2  
V
= 0 V  
GS  
0.1 V  
0.2 V  
0.3 V  
160  
0.8  
0.4  
0
0.6 V  
0.9 V  
0.3 V  
0.4 V  
80  
0
0.5 V  
1.2 V  
0
4
8
12  
16  
20  
0
4
8
12  
16  
20  
V
DS Drain-Source Voltage (V)  
VDS Drain-Source Voltage (V)  
Document Number: 70233  
S-40393—Rev. G, 15-Mar-04  
www.vishay.com  
3
J/SST201 Series  
Vishay Siliconix  
TYPICAL CHARACTERISTICS (T = 25_C UNLESS OTHERWISE NOTED)  
A
Transfer Characteristics  
Transfer Characteristics  
2
500  
V
= 1.5 V  
V
= 10 V  
DS  
GS(off)  
V
= 0.7 V  
VDS = 10 V  
GS(off)  
1.6  
1.2  
400  
300  
200  
T
A
= 55_C  
25_C  
T
= 55_C  
A
25_C  
0.8  
0.4  
0
125_C  
100  
0
125_C  
0
0.1  
0.2  
0.3  
0.4  
0.5  
0
0.4  
0.8  
1.2  
1.6  
2  
V
GS Gate-Source Voltage (V)  
V
Gate-Source Voltage (V)  
GS  
Transconductance vs. Gate-Source Voltage  
Transconductance vs. Gate-Source Voltage  
4
1.5  
VGS(off) = 1.5 V  
VDS = 10 V  
f = 1 kHz  
VGS(off) = 0.7 V  
VDS = 10 V  
f = 1 kHz  
3.2  
2.4  
1.2  
0.9  
0.6  
T
A
= 55_C  
25_C  
T
A
= 55_C  
25_C  
1.6  
0.8  
0
125_C  
0.3  
0
125_C  
0
0.4  
0.8  
1.2  
1.6  
2  
0
0.1  
0.2  
0.3  
0.4  
0.5  
V
GS Gate-Source Voltage (V)  
V
GS Gate-Source Voltage (V)  
Circuit Voltage Gain vs. Drain Current  
On-Resistance vs. Drain Current  
200  
2000  
g
R
L
fs  
A
+
V
1 ) R g  
os  
L
160  
120  
1600  
1200  
Assume V = 15 V, V = 5 V  
DD  
DS  
10 V  
VGS(off) = 0.7 V  
R
+
I
L
D
80  
800  
VGS(off) = 0.7 V  
1.5 V  
1.5 V  
40  
0
400  
0
0.01  
0.1  
D Drain Current (mA)  
1
0.01  
0.1  
1
I
ID Drain Current (mA)  
Document Number: 70233  
S-40393—Rev. G, 15-Mar-04  
www.vishay.com  
4
J/SST201 Series  
Vishay Siliconix  
TYPICAL CHARACTERISTICS (T = 25_C UNLESS OTHERWISE NOTED)  
A
Common-Source Input Capacitance  
vs. Gate-Source Voltage  
Common-Source Reverse Feedback Capacitance  
vs. Gate-Source Voltage  
10  
5
f = 1 MHz  
f = 1 MHz  
8
4
3
2
1
0
6
4
VDS = 0 V  
VDS = 0 V  
10 V  
2
0
10 V  
0
4  
8  
12  
16  
20  
0
4  
8  
12  
16  
20  
V
GS Gate-Source Voltage (V)  
VGS Gate-Source Voltage (V)  
Output Conductance vs. Drain Current  
Equivalent Input Noise Voltage vs. Frequency  
3
20  
V
= 1.5 V  
V
= 10 V  
DS  
GS(off)  
VDS = 10 V  
f = 1 kHz  
2.4  
16  
ID @ 100 mA  
1.8  
0.8  
12  
8
T
= 55_C  
A
25_C  
VGS = 0 V  
0.4  
0
4
0
125_C  
0.01  
0.1  
Drain Current (mA)  
1
10  
100  
1 k  
10 k  
100 k  
I
D
f Frequency (Hz)  
Output Characteristics  
Output Characteristics  
300  
240  
1.0  
0.8  
VGS(off) = 0.7 V  
VGS(off) = 1.5 V  
VGS = 0 V  
VGS = 0 V  
0.1  
0.3  
0.6  
180  
120  
60  
0.6  
0.4  
0.2  
0
0.2  
0.3  
0.4  
0.5  
0.9  
1.2  
0
0
0.5  
0
1.0  
0.1  
0.2  
0.3  
0.4  
0.2  
0.4  
0.6  
0.8  
V
DS Drain-Source Voltage (V)  
VDS Drain-Source Voltage (V)  
Document Number: 70233  
S-40393—Rev. G, 15-Mar-04  
www.vishay.com  
5
Legal Disclaimer Notice  
Vishay  
Disclaimer  
All product specifications and data are subject to change without notice.  
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf  
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein  
or in any other disclosure relating to any product.  
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any  
information provided herein to the maximum extent permitted by law. The product specifications do not expand or  
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed  
therein, which apply to these products.  
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this  
document or by any conduct of Vishay.  
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless  
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such  
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting  
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding  
products designed for such applications.  
Product names and markings noted herein may be trademarks of their respective owners.  
Document Number: 91000  
Revision: 18-Jul-08  
www.vishay.com  
1

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