J212-TR1 [VISHAY]
Transistor;型号: | J212-TR1 |
厂家: | VISHAY |
描述: | Transistor |
文件: | 总7页 (文件大小:55K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
J/SSTJ210 Series
Vishay Siliconix
N-Channel JFETs
J210
J211
J212
SSTJ211
SSTJ212
PRODUCT SUMMARY
Part Number
VGS(off) (V)
V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA)
J210
–1 to –3
–2.5 to –4.5
–4 to –6
–25
–25
–25
4
6
7
2
7
J/SSTJ211
J/SSTJ212
15
FEATURES
BENEFITS
APPLICATIONS
D Excellent High Frequency Gain:
D Wideband High Gain
D High-Frequency Amplifier/Mixer
D Oscillator
J211/212, Gps 12 dB (typ) @ 400 MHz
D Very High System Sensitivity
D High Quality of Amplification
D High-Speed Switching Capability
D Very Low Noise: 3 dB (typ) @
D Sample-and-Hold
400 MHz
D Very Low Capacitance Switches
D Very Low Distortion
D High-Quality Low-Level Signal
D High ac/dc Switch Off-Isolation
D High Gain: AV = 35 @ 100 mA
Amplification
DESCRIPTION
The J/SSTJ210 Series n-channel JFETs are general-purpose
and high-frequency amplifiers for a wide range of applications.
These devices feature low leakage (IGSS < 100 pA).
capability. The J/SSTJ210 Series is available in tape-and-reel
for automated assembly (see Packaging Information).
The TO-226AA (TO-92) plastic package, provides low cost
while the TO-236 (SOT-23) package provides surface-mount
For similar dual products, see the 2N5911/5912 and U440/441
data sheets.
TO-226AA
(TO-92)
TO-236
(SOT-23)
1
2
3
D
S
D
1
2
3
G
SSTJ211 (Z1)*
SSTJ212 (Z2)*
S
G
J210
J211
J212
*Marking Code for TO-236
Top View
Top View
For applications information see AN104.
Document Number: 70234
S-04028—Rev. E, 04-Jun-01
www.vishay.com
7-1
J/SSTJ210 Series
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –25 V
Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150_C
a
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350 mW
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 mA
1
Lead Temperature ( / ” from case for 10 sec.) . . . . . . . . . . . . . . . . . . . 300_C
16
Notes
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150_C
a. Derate 2.8 mW/_C above 25_C
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)
A
Limits
J210
J/SSTJ211
J/SSTJ212
Parameter
Symbol
Test Conditions
Typa Min Max Min Max Min Max Unit
Static
Gate-Source
Breakdown Voltage
V
I
G
= –1 mA , V = 0 V
–35
–25
–25
–25
(BR)GSS
DS
V
Gate-Source Cutoff Voltage
V
V
= 15 V, I = 1 nA
–1
–3
15
–2.5
–4.5
20
–4
–6
40
GS(off)
DS
D
b
Saturation Drain Current
I
V
= 15 V, V = 0 V
DS GS
mA
pA
nA
2
7
15
DSS
V
= –15 V, V = 0 V
–1
–0.5
–1
–100
–100
–100
GS
DS
Gate Reverse Current
I
GSS
T
= 125_C
A
a
Gate Operating Current
I
G
V
= 10 V, I = 1 mA
DG
D
pA
V
Drain Cutoff Current
I
V
= 10 V, V = –8 V
1
D(off)
DS
GS
Gate-Source Forward Voltage
V
I
= 1 mA , V = 0 V
0.7
GS(F)
G
DS
Dynamic
Common-Source
Forward Transconductance
g
fs
12
12
12
mS
4
6
7
b
V
= 15 V, V = 0 V
GS
DS
f = 1 kHz
Common-Source
Output Conductance
g
os
150
200
200
mS
Common-Source
Input Capacitance
C
4
1.5
5
iss
rss
V
V
= 15 V, V = 0 V
GS
f = 1 MHz
DS
DS
pF
Common-Source
Reverse Transfer Capacitance
C
= 15 V, V = 0 V
GS
f = 1 kHz
nV⁄
√Hz
Equivalent Input Noise Voltage
e
n
Notes
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
NZF
b. Pulse test: PW v300 ms duty cycle v3%.
Document Number: 70234
S-04028—Rev. E, 04-Jun-01
www.vishay.com
7-2
J/SSTJ210 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (T = 25_C UNLESS OTHERWISE NOTED)
A
Drain Current and Transconductance
vs. Gate-Source Cutoff Voltage
Gate Leakage Current
50
20
100 nA
10 nA
IG(on) @ I
D
IDSS @ VDS = 10 V, VGS = 0 V
g
@ VDS = 10 V, VGS = 0 V
fs
f = 1 kHz
40
30
20
10
0
16
12
T
A
= 125_C
10 mA
1 nA
IGSS @ 125_C
100 pA
1 mA
8
4
0
1 mA
g
fs
10 mA
10 pA
1 pA
T
A
= 25_C
I
DSS
IGSS @ 25_C
0.1 pA
0
–2
–4
–6
–8
–10
0
4
8
12
16
20
VGS(off) – Gate-Source Cutoff Voltage (V)
VDG – Drain-Gate Voltage (V)
On-Resistance and Output Conductance
vs. Gate-Source Cutoff Voltage
Common-Source Forward Transconductance
vs. Drain Current
200
200
10
VGS(off) = –5 V
VDS = 10 V
f = 1 kHz
g
os
160
120
80
40
0
160
120
80
8
6
4
T
A
= –55_C
25_C
rDS
125_C
40
rDS @ ID = 1 mA, VGS = 0 V
os @ VDS = 10 V, VGS = 0 V
2
0
g
f = 1 kHz
0
1
10
0
–2
–4
–6
–8
–10
0.1
ID – Drain Current (mA)
V
– Gate-Source Cutoff Voltage (V)
GS(off)
Output Characteristics
Output Characteristics
15
5
VGS(off) = –2 V
V
= 0 V
VGS(off) = –5 V
GS
V
= 0 V
GS
–0.2 V
–0.4 V
12
9
4
3
2
–0.5 V
–1.0 V
–1.5 V
–0.6 V
–0.8 V
–2.0 V
6
–2.5 V
–3.0 V
–3.5 V
–1.0 V
–1.2 V
3
1
0
0
0
0.2
0.4
0.6
0.8
1
0
0.2
0.4
0.6
0.8
1
VDS – Drain-Source Voltage (V)
VDS – Drain-Source Voltage (V)
Document Number: 70234
S-04028—Rev. E, 04-Jun-01
www.vishay.com
7-3
J/SSTJ210 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (T = 25_C UNLESS OTHERWISE NOTED)
A
Output Characteristics
Output Characteristics
10
30
VGS(off) = –2 V
V
= 0 V
GS
–0.5 V
8
6
4
2
0
24
18
12
6
V
= 0 V
GS
–1.0 V
–1.5 V
–0.2 V
–2.0 V
–2.5 V
–0.4 V
–0.6 V
–3.0 V
–3.5 V
–0.8 V
–1.0 V
–1.2 V
VGS(off) = –5 V
0
0
2
4
6
8
10
0
2
4
6
8
10
VDS – Drain-Source Voltage (V)
VDS – Drain-Source Voltage (V)
Transfer Characteristics
Transfer Characteristics
10
30
VGS(off) = –2 V
VDS = 10 V
VGS(off) = –5 V
VDS = 10 V
8
6
4
2
0
24
18
12
6
T
= –55_C
T
A
= –55_C
A
25_C
25_C
125_C
125_C
0
0
–0.4
–0.8
–1.2
–1.6
–2
0
–1
–2
–3
–4
–5
VGS – Gate-Source Voltage (V)
V
– Gate-Source Voltage (V)
GS
Transconductance vs. Gate-Source Voltage
Transconductance vs. Gate-Source Voltage
10
10
VGS(off) = –2 V
VDS = 10 V
f = 1 kHz
VGS(off) = –5 V
8
6
4
2
0
8
6
4
2
0
T
= –55_C
A
T
A
= –55_C
25_C
25_C
125_C
125_C
VDS = 10 V
f = 1 kHz
0
–0.4
–0.8
–1.2
–1.6
–2
0
–1
–2
–3
–4
–5
VGS – Gate-Source Voltage (V)
VGS – Gate-Source Voltage (V)
Document Number: 70234
S-04028—Rev. E, 04-Jun-01
www.vishay.com
7-4
J/SSTJ210 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (T = 25_C UNLESS OTHERWISE NOTED)
A
On-Resistance vs. Drain Current
Circuit Voltage Gain vs. Drain Current
200
50
g
R
L
fs
A
+
V
1 ) R g
os
L
160
120
80
40
30
Assume VDD = 15 V, VDS = 5 V
10 V
VGS(off) = –2 V
R
+
L
I
D
VGS(off) = –2 V
VGS(off) = –5 V
20
VGS(off) = –5 V
40
0
10
0
T
A
= 25_C
1
10
ID – Drain Current (mA)
100
0.1
1
10
ID – Drain Current (mA)
Common-Source Reverse Feedback Capacitance
vs. Gate-Source Voltage
Common-Source Input Capacitance
vs. Gate-Source Voltage
10
5
f = 1 MHz
f = 1 MHz
8
6
4
3
2
1
0
VDS = 5 V
VDS = 5 V
4
2
0
VDS = 0 V
VDS = 0 V
VDS = 10 V
V
= 10 V
DS
0
–4
–8
–12
–16
–20
0
–4
–8
–12
–16
–20
V
GS – Gate-Source Voltage (V)
V
GS – Gate-Source Voltage (V)
Input Admittance
Forward Admittance
100
10
100
10
T
V
= 25_C
T
V
= 25_C
A
A
DS = 10 V
DS = 10 V
ID = 10 mA
ID = 10 mA
g
ig
b
is
–b
fs
–g
fg
g
fs
b
fg
1
1
b
ig
g
is
0.1
0.1
100
1000
200
500
f – Frequency (MHz)
100
200
500
1000
f – Frequency (MHz)
Document Number: 70234
S-04028—Rev. E, 04-Jun-01
www.vishay.com
7-5
J/SSTJ210 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (T = 25_C UNLESS OTHERWISE NOTED)
A
Reverse Admittance
Output Admittance
100
10
T
V
= 25_C
A
TA = 25_C
DS = 10 V
V
DS = 10 V
ID = 10 mA
ID = 10 mA
–b
rs
10
1
–b
rg
b
b
og, os
–g
rs
1
0.1
g
rg
–g
rg
g
g
og, os
0.1
0.01
100
200
500
1000
100
200
500
1000
f – Frequency (MHz)
f – Frequency (MHz)
Equivalent Input Noise Voltage vs. Frequency
Output Conductance vs. Drain Current
50
150
120
90
60
30
0
VDS = 10 V
VGS(off) = –5 V
VDS = 10 V
f = 1 kHz
40
30
20
T
A
= –55_C
ID = 1 mA
25_C
ID = 10 mA
10
0
125_C
10
100
1 k
10 k
100 k
0.1
1
10
f – Frequency (Hz)
ID – Drain Current (mA)
Document Number: 70234
S-04028—Rev. E, 04-Jun-01
www.vishay.com
7-6
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
1
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