J212-TR5-E3 [VISHAY]

Transistor;


型号：	J212-TR5-E3
厂家：	VISHAY
描述：	Transistor
文件：	总7页 (文件大小：73K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

J/SSTJ210 Series

Vishay Siliconix

N-Channel JFETs

J210

J211

J212

SSTJ211

SSTJ212

PRODUCT SUMMARY

Part Number

V_GS(off)(V)

V_(BR)GSSMin (V) g_fsMin (mS) I_DSSMin (mA)

J210

–1 to –3

–2.5 to –4.5

–4 to –6

–25

J/SSTJ211

J/SSTJ212

FEATURES

BENEFITS

APPLICATIONS

D Excellent High Frequency Gain:

D Wideband High Gain

D High-Frequency Amplifier/Mixer

D Oscillator

J211/212, Gps 12 dB (typ) @ 400 MHz

D Very High System Sensitivity

D High Quality of Amplification

D High-Speed Switching Capability

D Very Low Noise: 3 dB (typ) @

D Sample-and-Hold

400 MHz

D Very Low Capacitance Switches

D Very Low Distortion

D High-Quality Low-Level Signal

D High ac/dc Switch Off-Isolation

D High Gain: A_V= 35 @ 100 mA

Amplification

DESCRIPTION

The J/SSTJ210 Series n-channel JFETs are general-purpose

and high-frequency amplifiers for a wide range of applications.

These devices feature low leakage (I_GSS< 100 pA).

capability. The J/SSTJ210 Series is available in tape-and-reel

for automated assembly (see Packaging Information).

The TO-226AA (TO-92) plastic package, provides low cost

while the TO-236 (SOT-23) package provides surface-mount

For similar dual products, see the 2N5911/5912 and U440/441

data sheets.

TO-226AA

(TO-92)

TO-236

(SOT-23)

SSTJ211 (Z1)*

SSTJ212 (Z2)*

J210

J211

J212

*Marking Code for TO-236

Top View

For applications information see AN104.

Document Number: 70234

S-04028—Rev. E, 04-Jun-01

www.vishay.com

7-1

J/SSTJ210 Series

Vishay Siliconix

ABSOLUTE MAXIMUM RATINGS

Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –25 V

Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150_C

Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350 mW

Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 mA

Lead Temperature ( / ” from case for 10 sec.) . . . . . . . . . . . . . . . . . . . 300_C

Notes

Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150_C

a. Derate 2.8 mW/_C above 25_C

SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)

Limits

J210

J/SSTJ211

J/SSTJ212

Parameter

Symbol

Test Conditions

Typ^aMin Max Min Max Min Max Unit

Static

Gate-Source

Breakdown Voltage

= –1 mA , V = 0 V

–35

–25

(BR)GSS

Gate-Source Cutoff Voltage

= 15 V, I = 1 nA

–1

–3

–2.5

–4.5

–4

–6

GS(off)

Saturation Drain Current

= 15 V, V = 0 V

DS GS

DSS

= –15 V, V = 0 V

–1

–0.5

–1

–100

Gate Reverse Current

GSS

= 125_C

Gate Operating Current

= 10 V, I = 1 mA

Drain Cutoff Current

= 10 V, V = –8 V

D(off)

Gate-Source Forward Voltage

= 1 mA , V = 0 V

0.7

GS(F)

Dynamic

Common-Source

Forward Transconductance

= 15 V, V = 0 V

f = 1 kHz

Common-Source

Output Conductance

150

200

Common-Source

Input Capacitance

1.5

iss

rss

= 15 V, V = 0 V

f = 1 MHz

Common-Source

Reverse Transfer Capacitance

= 15 V, V = 0 V

f = 1 kHz

nV⁄

√Hz

Equivalent Input Noise Voltage

Notes

a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.

NZF

b. Pulse test: PW v300 ms duty cycle v3%.

Document Number: 70234

S-04028—Rev. E, 04-Jun-01

www.vishay.com

7-2

J/SSTJ210 Series

Vishay Siliconix

TYPICAL CHARACTERISTICS (T = 25_C UNLESS OTHERWISE NOTED)

Drain Current and Transconductance

vs. Gate-Source Cutoff Voltage

Gate Leakage Current

100 nA

10 nA

I_G(on)@ I

I_DSS@ V_DS= 10 V, V_GS= 0 V

@ V_DS= 10 V, V_GS= 0 V

f = 1 kHz

= 125_C

10 mA

1 nA

I_GSS@ 125_C

100 pA

1 mA

10 mA

10 pA

1 pA

= 25_C

DSS

I_GSS@ 25_C

0.1 pA

–2

–4

–6

–8

–10

V_GS(off)– Gate-Source Cutoff Voltage (V)

V_DG– Drain-Gate Voltage (V)

On-Resistance and Output Conductance

vs. Gate-Source Cutoff Voltage

Common-Source Forward Transconductance

vs. Drain Current

200

V_GS(off)= –5 V

V_DS= 10 V

f = 1 kHz

160

120

160

120

= –55_C

25_C

r_DS

125_C

r_DS@ I_D= 1 mA, V_GS= 0 V

_os@ V_DS= 10 V, V_GS= 0 V

f = 1 kHz

–2

–4

–6

–8

–10

0.1

I_D– Drain Current (mA)

– Gate-Source Cutoff Voltage (V)

GS(off)

Output Characteristics

V_GS(off)= –2 V

= 0 V

V_GS(off)= –5 V

= 0 V

–0.2 V

–0.4 V

–0.5 V

–1.0 V

–1.5 V

–0.6 V

–0.8 V

–2.0 V

–2.5 V

–3.0 V

–3.5 V

–1.0 V

–1.2 V

0.2

0.4

0.6

0.8

0.2

0.4

0.6

0.8

V_DS– Drain-Source Voltage (V)

Document Number: 70234

S-04028—Rev. E, 04-Jun-01

www.vishay.com

7-3

J/SSTJ210 Series

Vishay Siliconix

TYPICAL CHARACTERISTICS (T = 25_C UNLESS OTHERWISE NOTED)

Output Characteristics

V_GS(off)= –2 V

= 0 V

–0.5 V

= 0 V

–1.0 V

–1.5 V

–0.2 V

–2.0 V

–2.5 V

–0.4 V

–0.6 V

–3.0 V

–3.5 V

–0.8 V

–1.0 V

–1.2 V

V_GS(off)= –5 V

V_DS– Drain-Source Voltage (V)

Transfer Characteristics

V_GS(off)= –2 V

V_DS= 10 V

V_GS(off)= –5 V

V_DS= 10 V

= –55_C

25_C

125_C

–0.4

–0.8

–1.2

–1.6

–2

–1

–2

–3

–4

–5

V_GS– Gate-Source Voltage (V)

– Gate-Source Voltage (V)

Transconductance vs. Gate-Source Voltage

V_GS(off)= –2 V

V_DS= 10 V

f = 1 kHz

V_GS(off)= –5 V

= –55_C

25_C

125_C

V_DS= 10 V

f = 1 kHz

–0.4

–0.8

–1.2

–1.6

–2

–1

–2

–3

–4

–5

V_GS– Gate-Source Voltage (V)

Document Number: 70234

S-04028—Rev. E, 04-Jun-01

www.vishay.com

7-4

J/SSTJ210 Series

Vishay Siliconix

TYPICAL CHARACTERISTICS (T = 25_C UNLESS OTHERWISE NOTED)

On-Resistance vs. Drain Current

Circuit Voltage Gain vs. Drain Current

200

1 ) R g

160

120

Assume V_DD= 15 V, V_DS= 5 V

10 V

V_GS(off)= –2 V

V_GS(off)= –5 V

= 25_C

I_D– Drain Current (mA)

100

0.1

I_D– Drain Current (mA)

Common-Source Reverse Feedback Capacitance

vs. Gate-Source Voltage

Common-Source Input Capacitance

vs. Gate-Source Voltage

f = 1 MHz

V_DS= 5 V

V_DS= 0 V

V_DS= 10 V

= 10 V

–4

–8

–12

–16

–20

–4

–8

–12

–16

–20

_GS– Gate-Source Voltage (V)

Input Admittance

Forward Admittance

100

= 25_C

_DS= 10 V

I_D= 10 mA

–b

–g

0.1

100

1000

200

500

f – Frequency (MHz)

100

200

500

1000

f – Frequency (MHz)

Document Number: 70234

S-04028—Rev. E, 04-Jun-01

www.vishay.com

7-5

J/SSTJ210 Series

Vishay Siliconix

TYPICAL CHARACTERISTICS (T = 25_C UNLESS OTHERWISE NOTED)

Reverse Admittance

Output Admittance

100

= 25_C

T_A= 25_C

_DS= 10 V

I_D= 10 mA

–b

og, os

–g

0.1

–g

og, os

0.1

0.01

100

200

500

1000

100

200

500

1000

f – Frequency (MHz)

Equivalent Input Noise Voltage vs. Frequency

Output Conductance vs. Drain Current

150

120

V_DS= 10 V

V_GS(off)= –5 V

V_DS= 10 V

f = 1 kHz

= –55_C

I_D= 1 mA

25_C

I_D= 10 mA

125_C

100

1 k

10 k

100 k

0.1

f – Frequency (Hz)

I_D– Drain Current (mA)

Document Number: 70234

S-04028—Rev. E, 04-Jun-01

www.vishay.com

7-6

Legal Disclaimer Notice

Vishay

Disclaimer

All product specifications and data are subject to change without notice.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf

(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein

or in any other disclosure relating to any product.

Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any

information provided herein to the maximum extent permitted by law. The product specifications do not expand or

otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed

therein, which apply to these products.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this

document or by any conduct of Vishay.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless

otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such

applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting

from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding

products designed for such applications.

Product names and markings noted herein may be trademarks of their respective owners.

Document Number: 91000

Revision: 18-Jul-08

www.vishay.com

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