JAN1N6810UEG2 [VISHAY]
Rectifier Diode, 1 Element, 1A, 1000V V(RRM), Silicon, DO-214BA, PLASTIC, DO-214BA, 2 PIN;型号: | JAN1N6810UEG2 |
厂家: | VISHAY |
描述: | Rectifier Diode, 1 Element, 1A, 1000V V(RRM), Silicon, DO-214BA, PLASTIC, DO-214BA, 2 PIN 光电二极管 |
文件: | 总3页 (文件大小:84K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
JAN1N6804UEG2 thru JAN1N6810UEG2
Patented*
Vishay Semiconductors
formerly
Glass Passivated Rectifiers
Reverse Voltage 50 to 1000V
Forward Current 1.0A
DO-214BA (UEG2)
1.7
1.0
Mounting Pad Layout
4.8
3.95
0.066 MIN.
(1.68 MIN.)
0.094 MAX.
(2.38 MAX.)
.41
.15
3.3
2.3
3.5
2.35
0.052 MIN.
(1.32 MIN.)
0.220
(5.58) REF
3.3
2.0
0.005 (0.2 max)
1.60
0.75
5.85
4.95
Dimensions in millimeters
Features
Glass-plastic encapsulation technique is covered by
Patent No. 3,996,602, brazen-lead assembly by Patent No. 3,930,306
and lead forming by Patent No. 5,151,846
• Qualified to MIL-PRF-19500/669
• Class 1 high temperature metallurgically bonded
construction brazed > 600°C
• Cavity-free, glass passivated junction. In epoxy over
hermetic glass.
Mechanical Data
Case: DO-214BA, molded epoxy over glass body (UEG2)
Terminals: Solder plated, solderable per MIL-STD-750,
• High temperature soldering guaranteed:
450°C/5 seconds at teminals
Method 2026
Polarity: Color band denotes cathode end
• Ideal for surface mount applications • Typical IR < 0.1µA
• Built-in strain relief • Easy pick and place
Mounting Position: Any
Weight: 0.0048oz, 0.120g
• Complete device submersible temperature of 265°C for
10 seconds in solder bath
Flammability: Epoxy is rated UL 94V-0.
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
Prefix J = JAN Quality Level; Prefix JX = JANTX Quality Level
Parameter
Symb.
J
J
J
J
J
J
J
Unit
1N6804 1N6805 1N6806 1N6807 1N6808 1N6809 1N6810
Device marking code
JA
JB
100
70
JC
JD
400
280
400
1.0
JE
JF
800 1000
560 700
800 1000
JG
Maximum repetitive peak reverse voltage
Maximum RMS voltage
VRRM 50
VRMS 35
200
140
200
600
420
600
V
V
V
A
Maximum DC blocking voltage
VDC
50
100
Maximum average forward rectified current at TL = 125°C
IF(AV)
Peak forward surge current 10 surges of 8.3ms each at
1 min. intervals (per MIL-STD-750 m 4066) super-imposed
on IO = 750mA DC; VR = rated VRRM, TA = 100°C
IFSM
25
A
RθJL
RθJA
25
80
Typical thermal resistance(1)
°C/W
°C
Operating junction and storage temperature range
Barometric Pressure
TJ,TSTG
–55 to +175
Hg
8
33
Note: (1) Thermal resistance measured with devices P.C.B. mounted on 0.2 x 0.2” (5.0 x 5.0mm) copper pad areas.
Document Number 88654
26-Mar-02
www.vishay.com
1
JAN1N6804UEG2 thru JAN1N6810UEG2
Vishay Semiconductors
formerly
Electrical Characteristics (TJ = 25°C unless otherwise noted)
Minimum reverse breakdown voltage at 50µA
VBR
55
110
220
440
660
880 1100
V
V
Maximum instantaneous forward voltage
TP = 300µs
at 1.0A
at 3.0A
1.1
1.3
VF
Maximum DC reverse current
at rated DC blocking voltage
TA = 25°C
TA = 125°C
0.5
50
IR
µA
Typical reverse recovery time at
IF = 0.5A, IR = 1.0A, Irr = 0.25 A
trr
2.0
15
µs
Typical junction capacitance at 4.0V, 1MHz
CJ
pF
Ratings and
Characteristic Curves (TA = 25°C unless otherwise noted)
Fig. 2 – Typical Instantaneous
Forward Characteristics
Fig. 1 – Forward Current Derating Curve
10
60 HZ Resistive or Inductive Load
1.0
1
0.5
0.1
P.C.B. Mounted on
0.2 x 0.2" (5.0 x 5.0mm)
Copper Pad Areas
0
Pulse Width = 300µs
1% Duty Cycle
TJ = 25°C
0.01
110
120
130
100
140
150
160
175
0.4
0.6
0.8
1.0
1.2
1.4
1.6
Instantaneous Forward Voltage (V)
Lead Temperature (°C)
www.vishay.com
2
Document Number 88654
26-Mar-02
JAN1N6804UEG2 thru JAN1N6810UEG2
Vishay Semiconductors
formerly
Ratings and
Characteristic Curves (TA = 25°C unless otherwise noted)
Fig. 3 –Typical Reverse Characteristics
Fig. 4 – Typical Junction Capacitance
10
30
10
TJ = 25°C
f = 1.0 MHZ
Vsig = 50mVp-p
1
TJ = 100°C
0.1
TJ = 25°C
1
0.01
0
20
40
60
80
100
1
10
100
Percent of Rated Peak Reverse Voltage (%)
Reverse Voltage (V)
Fig. 5 – Typical Transient
Thermal Impedance
100
10
Mounted on
0.2 x 0.27" (5.0 x 7.0mm)
Copper Pad Areas
1
0.1
0.1
1
10
0.01
100
t — Pulse Duration (sec.)
Document Number 88654
26-Mar-02
www.vishay.com
3
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