JAN1N6810UEG2 [VISHAY]

Rectifier Diode, 1 Element, 1A, 1000V V(RRM), Silicon, DO-214BA, PLASTIC, DO-214BA, 2 PIN;
JAN1N6810UEG2
型号: JAN1N6810UEG2
厂家: VISHAY    VISHAY
描述:

Rectifier Diode, 1 Element, 1A, 1000V V(RRM), Silicon, DO-214BA, PLASTIC, DO-214BA, 2 PIN

光电二极管
文件: 总3页 (文件大小:84K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
JAN1N6804UEG2 thru JAN1N6810UEG2  
Patented*  
Vishay Semiconductors  
formerly  
Glass Passivated Rectifiers  
Reverse Voltage 50 to 1000V  
Forward Current 1.0A  
DO-214BA (UEG2)  
1.7  
1.0  
Mounting Pad Layout  
4.8  
3.95  
0.066 MIN.  
(1.68 MIN.)  
0.094 MAX.  
(2.38 MAX.)  
.41  
.15  
3.3  
2.3  
3.5  
2.35  
0.052 MIN.  
(1.32 MIN.)  
0.220  
(5.58) REF  
3.3  
2.0  
0.005 (0.2 max)  
1.60  
0.75  
5.85  
4.95  
Dimensions in millimeters  
Features  
Glass-plastic encapsulation technique is covered by  
Patent No. 3,996,602, brazen-lead assembly by Patent No. 3,930,306  
and lead forming by Patent No. 5,151,846  
Qualified to MIL-PRF-19500/669  
Class 1 high temperature metallurgically bonded  
construction brazed > 600°C  
Cavity-free, glass passivated junction. In epoxy over  
hermetic glass.  
Mechanical Data  
Case: DO-214BA, molded epoxy over glass body (UEG2)  
Terminals: Solder plated, solderable per MIL-STD-750,  
High temperature soldering guaranteed:  
450°C/5 seconds at teminals  
Method 2026  
Polarity: Color band denotes cathode end  
Ideal for surface mount applications Typical IR < 0.1µA  
Built-in strain relief Easy pick and place  
Mounting Position: Any  
Weight: 0.0048oz, 0.120g  
Complete device submersible temperature of 265°C for  
10 seconds in solder bath  
Flammability: Epoxy is rated UL 94V-0.  
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.  
Prefix J = JAN Quality Level; Prefix JX = JANTX Quality Level  
Parameter  
Symb.  
J
J
J
J
J
J
J
Unit  
1N6804 1N6805 1N6806 1N6807 1N6808 1N6809 1N6810  
Device marking code  
JA  
JB  
100  
70  
JC  
JD  
400  
280  
400  
1.0  
JE  
JF  
800 1000  
560 700  
800 1000  
JG  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRRM 50  
VRMS 35  
200  
140  
200  
600  
420  
600  
V
V
V
A
Maximum DC blocking voltage  
VDC  
50  
100  
Maximum average forward rectified current at TL = 125°C  
IF(AV)  
Peak forward surge current 10 surges of 8.3ms each at  
1 min. intervals (per MIL-STD-750 m 4066) super-imposed  
on IO = 750mA DC; VR = rated VRRM, TA = 100°C  
IFSM  
25  
A
RθJL  
RθJA  
25  
80  
Typical thermal resistance(1)  
°C/W  
°C  
Operating junction and storage temperature range  
Barometric Pressure  
TJ,TSTG  
55 to +175  
Hg  
8
33  
Note: (1) Thermal resistance measured with devices P.C.B. mounted on 0.2 x 0.2(5.0 x 5.0mm) copper pad areas.  
Document Number 88654  
26-Mar-02  
www.vishay.com  
1
JAN1N6804UEG2 thru JAN1N6810UEG2  
Vishay Semiconductors  
formerly  
Electrical Characteristics (TJ = 25°C unless otherwise noted)  
Minimum reverse breakdown voltage at 50µA  
VBR  
55  
110  
220  
440  
660  
880 1100  
V
V
Maximum instantaneous forward voltage  
TP = 300µs  
at 1.0A  
at 3.0A  
1.1  
1.3  
VF  
Maximum DC reverse current  
at rated DC blocking voltage  
TA = 25°C  
TA = 125°C  
0.5  
50  
IR  
µA  
Typical reverse recovery time at  
IF = 0.5A, IR = 1.0A, Irr = 0.25 A  
trr  
2.0  
15  
µs  
Typical junction capacitance at 4.0V, 1MHz  
CJ  
pF  
Ratings and  
Characteristic Curves (TA = 25°C unless otherwise noted)  
Fig. 2 – Typical Instantaneous  
Forward Characteristics  
Fig. 1 – Forward Current Derating Curve  
10  
60 HZ Resistive or Inductive Load  
1.0  
1
0.5  
0.1  
P.C.B. Mounted on  
0.2 x 0.2" (5.0 x 5.0mm)  
Copper Pad Areas  
0
Pulse Width = 300µs  
1% Duty Cycle  
TJ = 25°C  
0.01  
110  
120  
130  
100  
140  
150  
160  
175  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
Instantaneous Forward Voltage (V)  
Lead Temperature (°C)  
www.vishay.com  
2
Document Number 88654  
26-Mar-02  
JAN1N6804UEG2 thru JAN1N6810UEG2  
Vishay Semiconductors  
formerly  
Ratings and  
Characteristic Curves (TA = 25°C unless otherwise noted)  
Fig. 3 Typical Reverse Characteristics  
Fig. 4 Typical Junction Capacitance  
10  
30  
10  
TJ = 25°C  
f = 1.0 MHZ  
Vsig = 50mVp-p  
1
TJ = 100°C  
0.1  
TJ = 25°C  
1
0.01  
0
20  
40  
60  
80  
100  
1
10  
100  
Percent of Rated Peak Reverse Voltage (%)  
Reverse Voltage (V)  
Fig. 5 Typical Transient  
Thermal Impedance  
100  
10  
Mounted on  
0.2 x 0.27" (5.0 x 7.0mm)  
Copper Pad Areas  
1
0.1  
0.1  
1
10  
0.01  
100  
t Pulse Duration (sec.)  
Document Number 88654  
26-Mar-02  
www.vishay.com  
3

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