KBU8A-E4 [VISHAY]
DIODE 6 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE, PLASTIC, CASE KBU, 4 PIN, Bridge Rectifier Diode;
| 型号： | KBU8A-E4 |
| 厂家： | 
VISHAY |
| 描述： | DIODE 6 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE, PLASTIC, CASE KBU, 4 PIN, Bridge Rectifier Diode |
| 文件： | 总4页 (文件大小：182K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
KBU8A thru KBU8M
Vishay General Semiconductor
Single-Phase Bridge Rectifier
Major Ratings and Characteristics
Case Style KBU
IF(AV)
VRRM
IFSM
IR
8 A
50 V to 1000 V
300 A
10 µA
VF
1.0 V
~
~
Tj max.
150 °C
~
~
Features
Mechanical Data
• UL Recognition file number E54214
• Ideal for printed circuit boards
• High surge current capability
Case: KBU
Epoxy meets UL-94V-0 Flammability rating
Terminals: Silver plated (E4 Suffix) leads, solderable
per J-STD-002B and JESD22-B102D
Polarity: As marked on body
• High case dielectric strength of 1500 V
• Solder Dip 260 °C, 40 seconds
RMS
Mounting Torque: 10 cm-kg (8.8 inches-lbs) max.
Recommended Torque: 5.7 cm-kg (5 inches-lbs)
Typical Applications
General purpose use in ac-to-dc bridge full wave rec-
tification for Monitor, TV, Printer, SMPS, Adapter,
Audio equipment, and Home Appliances applications
Maximum Ratings
Ratings at 25 °C ambient temperature unless otherwise specified.
Parameter
Symbols KBU8A KBU8B KBU8D KBU8G KBU8J KBU8K KBU8M Units
Maximum repetitive peak reverse voltage
VRRM
VRMS
VDC
50
35
50
100
70
200
140
200
400
280
400
600
420
600
800
560
800
1000
700
V
V
V
A
Maximum RMS voltage
Maximum DC blocking voltage
100
1000
Maximum average forward TC = 100 °C (1)(3)
rectified output current at TA = 40 °C (2)
IF(AV)
8.0
6.0
Peak forward surge current single sine-wave
superimposed on rated load
IFSM
300
A
Operating junction and storage temperature
range
TJ, TSTG
- 50 to + 150
°C
Electrical Characteristics
Ratings at 25 °C ambient temperature unless otherwise specified.
Parameter
Test condition Symbols KBU8A KBU8B KBU8D KBU8G KBU8J KBU8K KBU8M Units
Maximum instantaneous
forward drop per leg
at 8.0 A
VF
1.0
V
Maximum DC reverse
current at rated DC blocking
voltage per leg
T
A = 25 °C
IR
10
1.0
µA
mA
TA = 125 °C
Document Number 88658
12-Jul-05
www.vishay.com
1
KBU8A thru KBU8M
Vishay General Semiconductor
Thermal Characteristics
Ratings at 25 °C ambient temperature unless otherwise specified.
Parameter
Symbols KBU8A KBU8B KBU8D KBU8G KBU8J KBU8K KBU8M Units
18(2)
3.0(3)
Typical thermal resistance per leg
RθJA
RθJC
°C/W
Notes:
(1) Recommended mounting position is to bolt down on heatsink with silicone thermal compound for maximum heat transfer with #6 screw
(2) Units mounted in free air, no heatsink, P.C.B. at 0.375" (9.5 mm) lead length with 0.5 x 0.5" (12 x 12 mm) copper pads
(3) Units mounted on a 3.0 x 3.0" x 0.11" thick (7.5 x 7.5 x 0.3 cm) Al. Plate heatsink
Ratings and Characteristics Curves
(TA = 25 °C unless otherwise noted)
8.0
100
Heatsink Mounting,
TC, 3.0 x 3.0 x 12" Thk
Al. Plate (7.5 x 0.3 cm)
6.0
4.0
2.0
0
10
TJ = 25 °C
Pulse Width = 300 µs
1% Duty Cycle
1
P.C.B. Mounting, TA
0.375" x (9.5 mm) Lead Length
0.5 x 0.5" (12 x 12 mm) Copper Pads
60 HZ Resistive or Inductive Load
0.1
0.6
0
50
100
150
0.7
0.8
0.9
1.0
1.1
1.2
1.3
Temperature (°C)
Instantaneous Forward Voltage (V)
Figure 1. Derating Curve Output Rectified Current
Figure 3. Typical Instantaneous Forward Characteristics Per Leg
50
300
TJ = 150°C
Single Sine-Wave
250
10
1
TJ = 100°C
200
150
100
50
0.1
0.01
TJ = 25°C
1.0 Cycle
0
1
10
100
0
20
40
60
80
100
Number of Cycles at 60 HZ
Percent of Rated Peak Reverse Voltage (%)
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
Figure 4. Typical Reverse Leakage Characteristics Per Leg
www.vishay.com
2
Document Number 88658
12-Jul-05
KBU8A thru KBU8M
Vishay General Semiconductor
400
100
T
= 25°C
J
f = 1.0 MHZ
Vsig = 50mVp-p
10
1
10
100
Reverse Voltage (V)
Figure 5. Typical Junction Capacitance Per Leg
Package outline dimensions in inches (millimeters)
Case Style KBU
0.935 (23.7)
0.895 (22.7)
0.160 (4.1)
0.140 (3.6)
0.185 (4.7)
0.165 (4.2)
o
45
0.085 (2.2)
0.065 (1.7)
0.700
(17.8)
0.760
(19.3)
MAX.
0.660
(16.8)
0.075 (1.9) R. TYP.
(2 PLACES)
0.455 (11.3)
0.405 (10.3)
1.0
(25.4)
MIN.
0.052 (1.3)
0.048 (1.2)
DIA.
0.220 (5.6)
0.180 (4.6)
0.240 (6.09)
0.200 (5.08)
0.280 (7.1)
0.260 (6.6)
0.205 (5.2)
0.185 (4.7)
Document Number 88658
12-Jul-05
www.vishay.com
3
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
www.vishay.com
1
相关型号：
KBU8A/72-E4
DIODE 6 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE, PLASTIC, CASE KBU, 4 PIN, Bridge Rectifier Diode
VISHAY
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