LH1511BAB [VISHAY]

1 Form B Solid State Relay; 1表格B固态继电器
LH1511BAB
型号: LH1511BAB
厂家: VISHAY    VISHAY
描述:

1 Form B Solid State Relay
1表格B固态继电器

光电 继电器 固态继电器 输出元件
文件: 总4页 (文件大小:129K)
中文:  中文翻译
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LH1511BAB/ BABTR/ BT  
VISHAY  
Vishay Semiconductors  
1 Form B Solid State Relay  
DIP  
SMD  
Features  
• Isolation Test Voltage 3750 VRMS  
• Typical RON 10  
• Load Voltage 200 V  
• Linear, AC/DC Operation  
• Clean Bounce Free Switching  
• Low Power Consumption  
• SMD Lead Available on Tape and Reel  
DC  
5
S
6
S'  
4
S'  
S'  
1
2
3
i179031  
Agency Approvals  
• UL - File No. E52744  
• CSA - Certification 093751  
• BSI  
structed as a multi-chip hybrid device. Actuation  
control is via an Infrared LED. The output switch is a  
combination of a photodiode array with MOSFET  
switches and control circuity. The relays can be con-  
figured for AC/DC or DC only operation.  
Applications  
General Telecom Switching  
Security Equipment  
Instrumentation  
Order Information  
Part  
LH1511BAB  
LH1511BABTR  
LH1511BT  
Remarks  
Gullwing, Tubes, SMD-6  
Gullwing, Tape and Reel, SMD-6  
Tubes, DIP-6  
Industrial Controls  
Description  
The LH1511 relays are SPST normally closed  
switches (1 Form B) that can replace electromechan-  
ical relays in many applications. The relays are con-  
Absolute Maximum Ratings, T  
= 25 °C  
amb  
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is  
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute  
Maximum Ratings for extended periods of time can adversely affect reliability.  
SSR  
Parameter  
Test condition  
Symbol  
Value  
50  
Unit  
mA  
LED continuous forward current  
I
F
LED reverse voltage  
I
I
10  
50  
A
A
V
8.0  
200  
200  
V
V
R
L
R
DC or peak AC load voltage  
V
L
Continuous DC load current -  
bidirectional operation  
I
mA  
L
Continuous DC load current -  
unidirectional operation  
I
300  
mA  
L
Peak load current (single shot) t = 100 ms  
Ambient temperature range  
I
400  
mA  
°C  
P
T
- 40 to + 85  
- 40 to + 125  
amb  
Storage temperature range  
T
°C  
stg  
Document Number 83811  
Rev. 1.2, 15-Mar-04  
www.vishay.com  
1
LH1511BAB/ BABTR/ BT  
Vishay Semiconductors  
VISHAY  
Parameter  
Test condition  
t = 10 s max  
t = 1.0 s, I  
Symbol  
Value  
260  
Unit  
°C  
Pin soldering temperature  
T
sld  
Input/output isolation voltage  
V
= 10 A max  
V
P
3750  
550  
V
RMS  
RMS  
ISO  
ISO  
diss  
Output power dissipation  
(continuous)  
mW  
Electrical Characteristics, T  
= 25 °C  
amb  
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering  
evaluations. Typical values are for information only and are not part of the testing requirements.  
Input  
Parameter  
Test condition  
I = 200 mA, t = 10 ms  
Symbol  
Min  
0.2  
Typ.  
0.9  
Max  
Unit  
mA  
LED forward current, switch  
turn-on  
I
L
Fon  
LED forward current, switch  
turn-off  
V = 150 V  
I
1.0  
2.0  
mA  
V
L
Foff  
LED forward voltage  
I
= 10 mA  
V
1.15  
Min  
1.26  
1.45  
F
F
Output  
Parameter  
Test condition  
= 0 mA, I = 50 mA  
Symbol  
Typ.  
10  
Max  
15  
Unit  
ON-resistance ac/dc :  
Pin 4, 6 (+) to 5 (-)  
I
I
R
F
F
L
ON  
ON-resistance dc:  
Pin 4, 6 (+) to 5 (-)  
= 0 mA, I = 100 mA  
R
2.5  
3.75  
L
ON  
Off-resistance  
I
I
I
= 5.0 mA, V = 100 V  
R
OFF  
0.1  
1.4  
0.07  
50  
G
F
F
F
L
Off-state leakage current  
Output capacitance  
= 5.0 mA, V = 200 V  
1.0  
nA  
pf  
L
= 5.0 mA, V = 50 V  
L
Transfer  
Parameter  
Test condition  
Symbol  
Min  
Typ.  
3.0  
Max  
Unit  
pF  
Capacitance (input-output)  
V
= 1.0 V  
C
ISO  
IO  
on  
off  
Turn-on time  
Turn-off time  
I
I
= 10 mA, I = 50 mA  
t
t
1.2  
1.0  
3.0  
3.0  
ms  
ms  
F
F
L
= 10 mA, I = 50 mA  
L
Typical Characteristics (Tamb = 25 C unless otherwise specified)  
Fig. 1 Recommended Operating Conditions  
150  
120  
5.0 mA  
90  
60  
30  
0
-40  
-20  
0
20  
40  
60  
80  
AMBIENT TEMPERATURE (°C)  
ilh1511bt_00  
www.vishay.com  
2
Document Number 83811  
Rev. 1.2, 15-Mar-04  
LH1511BAB/ BABTR/ BT  
VISHAY  
Vishay Semiconductors  
Package Dimensions in Inches (mm)  
DIP  
.330 (8.38)  
.100 (2.54)  
.250 (6.35)  
.360 (9.14)  
ISO Method A  
.018 (.46)  
6-.031 (6-.80) Dia.  
.100 (2.54)  
.300 (7.62)  
.130 (3.30)  
.285 (7.24)Typ.  
.250 (6.35)  
.360 (9.14)  
.360 (9.14)  
.200 (5.08)  
i178015  
Package Dimensions in Inches (mm)  
SMD  
.330 (8.38)  
.100 (2.54)  
.100 (2.54)  
.327 (8.31)  
.250 (6.35)  
.375 (9.53)  
.075 (1.90)  
.018 (.46)  
.059 (1.50)  
.300 (7.62)  
.130 (3.30)  
.175 (4.45)  
ISO Method A  
.025 (.64)Typ.  
i178016  
.010 (.25)Typ.  
Document Number 83811  
Rev. 1.2, 15-Mar-04  
www.vishay.com  
3
LH1511BAB/ BABTR/ BT  
Vishay Semiconductors  
VISHAY  
Ozone Depleting Substances Policy Statement  
It is the policy of Vishay Semiconductor GmbH to  
1. Meet all present and future national and international statutory requirements.  
2. Regularly and continuously improve the performance of our products, processes, distribution and  
operatingsystems with respect to their impact on the health and safety of our employees and the public, as  
well as their impact on the environment.  
It is particular concern to control or eliminate releases of those substances into the atmosphere which are  
known as ozone depleting substances (ODSs).  
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs  
and forbid their use within the next ten years. Various national and international initiatives are pressing for an  
earlier ban on these substances.  
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the  
use of ODSs listed in the following documents.  
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments  
respectively  
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental  
Protection Agency (EPA) in the USA  
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.  
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting  
substances and do not contain such substances.  
We reserve the right to make changes to improve technical design  
and may do so without further notice.  
Parameters can vary in different applications. All operating parameters must be validated for each  
customer application by the customer. Should the buyer use Vishay Semiconductors products for any  
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all  
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal  
damage, injury or death associated with such unintended or unauthorized use.  
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany  
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423  
www.vishay.com  
4
Document Number 83811  
Rev. 1.2, 15-Mar-04  

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