LVB1560_13 [VISHAY]
Single-Phase Single In-Line Bridge Rectifiers;
| 型号： | LVB1560_13 |
| 厂家： | 
VISHAY |
| 描述： | Single-Phase Single In-Line Bridge Rectifiers |
| 文件： | 总3页 (文件大小：69K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
LVB1560
Vishay General Semiconductor
www.vishay.com
Low VF Single-Phase Single In-Line Bridge Rectifiers
FEATURES
• UL recognition file number E54214, Vol. 1
• Thin single in-Iine package
• Oxide planar chip junction
• Low forward voltage drop
• High surge current capability
• High case dielectric strength of 2500 VRMS
~
~
• Solder dip 275 °C max. 10 s, per JESD 22-B106
Case Style GSIB-5S
~
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
~
TYPICAL APPLICATIONS
General purpose use in AC/DC bridge full wave rectification
for switching power supply, home appliances and
white-goods applications specially for telecom power
supply, high efficiency desktop PC and server SMPS.
PRIMARY CHARACTERISTICS
Package
GSIB-5S
15 A
IF(AV)
MECHANICAL DATA
VRRM
600 V
Case: GSIB-5S
Epoxy meets UL 94 V-0 flammability rating
Base P/N-M3
commercial grade
IFSM
IR
400 A
10 μA
0.73 V
150 °C
In-Line
- halogen-free, RoHS-compliant, and
VF at IF = 7.5 A, TA = 125 °C
TJ max.
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
Diode variations
M3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked on body
Mounting Torque: 10 cm-kg (8.8 in-lbs) maximum
Recommended Torque: 5.7 cm-kg (5 in-lbs)
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
LVB1560
UNIT
Maximum repetitive peak reverse voltage
VRRM
600
V
(1)
T
C = 125 °C
IO
15
Maximum average forward rectified
output current at
A
(2)
TA = 25 °C
IO
3.6
Non-repetiitive peak forward surge current 8.3 ms single
sine-wave, TJ = 25 °C
IFSM
400
A
Rating for fusing (t < 8.3 ms)
TJ = 25 °C
I2t
664
A2s
°C
Operating junction and storage temperature range
TJ, TSTG
- 55 to + 150
Notes
(1)
Unit case mounted on aluminum plate heatsink
Units mounted on PCB without heatsink
(2)
Revision: 26-Jun-13
Document Number: 89392
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
LVB1560
Vishay General Semiconductor
www.vishay.com
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
MAX.
UNIT
TA = 25 °C
0.87
0.73
0.2
0.90
(1)
Instantaneous forward voltage
IF = 7.5 A
VR = 600 V
VF
V
TA = 125 °C
TA = 25 °C
TA = 125 °C
-
10
-
(2)
Reverse current per diode
IR
μA
60
Typical reverse recovery time
Typical junction capacitance
IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A
4.0 V, 1 MHz
trr
1.8
-
-
μs
pF
CJ
260
Notes
(1)
(2)
Pulse test: 300 μs pulse width, 1 % duty cycle
Pulse test: pulse width 40 ms
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
LVB1560
UNIT
(2)
RJA
25
Maximum thermal resistance
°C/W
(1)
RJC
1.0
Notes
(1)
With heatsink
Without heatsink, free air
(2)
EMC SURGE IMMUNITY TEST STANDARD (TA = 25 °C, unless otherwise noted)
STANDARD
TEST TYPE
TEST CONDITIONS
SYMBOL CLASS
VALUE
IEC 61000-4-5 Power supply coupling mode, line to line 1.2/50 μs waveform, R = 2 , TA = 25 °C (1)
VPEAK
-
6 kV maximum
Note
(1)
Immunity to IEC 61000-4-5 peak pulse voltage test, 1.2/50 μs, 2 , 5 times each of positive and negative polarity test
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
LVB1560-M3/45
6.9
45
20
Tube
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
20
5
4
3
2
1
With Heatsink, Sine-Wave, R-Load
15
10
T
Measurement
C
5
0
Without Heatsink
Sine-wave, R-Load,
Free Air, T
A
0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
Temperature (°C)
Ambient Temperature (°C)
Fig. 1 - Derating Curve Output Rectified Current
Fig. 2 - Forward Current Derating Curve
Revision: 26-Jun-13
Document Number: 89392
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
LVB1560
Vishay General Semiconductor
www.vishay.com
28
24
20
16
12
8
1000
100
10
TA = 150 °C
TA = 125 °C
TA = 100 °C
1
0.1
4
TA = 25 °C
0
0.01
0
2
4
6
8
10
12
14
16
10
20
30
40
50
60
70
80
90 100
Average Forward Current ( A )
Percent of Rated Peak Reverse Voltage (%)
Fig. 3 - Forward Power Dissipation
Fig. 5 - Typical Reverse Characteristics Per Diode
100
10
1000
100
10
T
= 25 °C
J
f = 1 MHz
= 50 mV
V
stg
P-P
TA = 150 °C
TA = 125 °C
TA = 100 °C
TA = 25 °C
1
0.1
1
0.1
1
10
100
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
Fig. 4 - Typical Forward Characteristics Per Diode
Fig. 6 - Typical Junction Capacitance Per Diode
PACKAGE OUTLINE DIMENSIONS in millimeters
Case Style GSIB-5S
4.6 0.2
3.6 0.2
30 0.3
+
2.5 0.2
2.7 0.2
2.2 0.2
1
0.1
0.7 0.1
7.5
0.2
7.5
0.2
10 0.2
Revision: 26-Jun-13
Document Number: 89392
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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