M100B/23 [VISHAY]
Rectifier Diode, 1 Element, 1A, 100V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN;型号: | M100B/23 |
厂家: | VISHAY |
描述: | Rectifier Diode, 1 Element, 1A, 100V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN 二极管 |
文件: | 总2页 (文件大小:26K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
M100A thru M100M
Vishay Semiconductors
formerly General Semiconductor
General Purpose Plastic Rectifiers
Reverse Voltage
50 to 1000V
Forward Current 1.0A
Features
• Plastic package has Underwriters Laboratories
Flammability Classification 94V-0
• Construction utilizes void-free molded plastic technique
• Low reverse leakage
DO-204AL (DO-41)
1.0 (25.4)
MIN.
• High surge current capability
• High temperature soldering guaranteed: 250°C/10 seconds,
0.375" (9.5mm) lead length, 5 lbs. (2.3kg) tension
0.107 (2.7)
0.080 (2.0)
DIA.
0.205 (5.2)
0.160 (4.1)
Mechanical Data
Case: JEDEC DO-204AL, molded plastic body
Terminals: Plated axial leads, solderable per
MIL-STD-750, Method 2026
Polarity: Color band denotes cathode end
Mounting Position: Any
Weight: 0.012 oz., 0.3 g
Dimensions in inches
and (millimeters)
1.0 (25.4)
MIN.
Packaging Codes/Options:
1/5K per bulk box, 50k per carton
4/5.5K per 13” reel (52.4mm tape), 22K per carton
23/3K per ammo mag. (52.4mm tape), 27K per carton
0.034 (0.86)
0.028 (0.71)
DIA.
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
Parameter
Symbol M100A M100B M100D M100G M100J M100K M100M Unit
Maximum repetitive peak reverse voltage
Maximum RMS voltage
VRRM
VRMS
VDC
50
35
50
100
70
200
140
200
400
280
400
600
420
600
800 1000
560 700
800 1000
V
V
V
Maximum DC blocking voltage
100
Maximum average forward rectified current
0.375" (9.5mm) lead length at TA = 100°C
IF(AV)
1.0
50
A
A
Peak forward surge current 8.3ms single half sine-wave
superimposed on rated load (JEDEC Method) at TA = 75°C
Maximum full load reverse current full cycle average
0.375" (9.5mm) lead length at TA = 55°C
IR(AV)
100
µA
Typical thermal resistance(1)
RθJA
RθJL
50
25
°C/W
°C
Operating junction and storage temperature range
TJ,TSTG
–50 to +150
Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
Parameter
Symbol M100A M100B M100D M100G M100J M100K M100M Unit
Maximum instantaneous forward voltage at 1.0A
VF
1.0
1.1
V
Maximum DC reverse current TA = 25°C
at rated DC blocking voltage TA = 100°C
1.0
50
IR
µA
Typical reverse recovery time at
IF = 0.5A, IR = 1.0A, Irr = 0.25A
trr
2.0
15
µs
Typical junction capacitance at 4.0V, 1MHz
CJ
pF
Note: (1) Thermal resistance from junction to ambient and from junction to lead at 0.375” (9.5mm) lead length, P.C.B. mounted
Document Number 88659
08-Jul-02
www.vishay.com
1
M100A thru M100M
Vishay Semiconductors
formerly General Semiconductor
Ratings and
Characteristic Curves (TA = 25°C unless otherwise noted)
Fig 2 – Maximum Non-repetitive Peak
Forward Surge Current
Fig 1 – Forward Current Derating Curve
50
40
30
20
10
0
1.2
T
= 75°C
A
8.3ms Single Half Sine-wave
(JEDEC Method)
1.0
60 Hz
Resistive or
Inductive Load
0.8
0.6
0.4
0.2 x 0.2" (5.0 x 5.0mm)
0.2
Copper Pads
0.375" (9.5mm) Lead Length
0
1
0
25
50
75
100
125
150
175
10
100
Number of Cycles at 60Hz
Ambient Temperature, °C
Fig 3 – Typical Instantaneous Forward
Characteristics
Fig 4 – Typical Reverse Characteristics
100
10
1,000
100
10
T
= 150°C
J
T
= 25°C
J
Pulse width = 300µs
1
1% Duty Cycle
1
0.1
0.1
T
= 25°C
J
0.01
0.01
0.6
40
60
80
0.8
1.0
1.2
1.4
1.6
1.8
100
0
20
Percentage of Peak Reverse Voltage (%)
Instantaneous Forward Voltage (V)
Fig. 6 – Typical Transient Thermal
Impedance
Fig 5 – Typical Junction Capacitance
100
10
1
100
10
1
T
= 25¡C
J
f = 1.0 MHz
Vsig = 50mVp-p
0.1
0.01
0.1
1
10
100
0.1
1
10
100
Reverse Voltage (V)
t -- Pulse Duration (sec)
www.vishay.com
2
Document Number 88659
08-Jul-02
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