M3045S-M3/4W [VISHAY]
DIODE 30 A, 45 V, SILICON, RECTIFIER DIODE, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC PACKAGE-3, Rectifier Diode;
| 型号： | M3045S-M3/4W |
| 厂家： | 
VISHAY |
| 描述： | DIODE 30 A, 45 V, SILICON, RECTIFIER DIODE, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC PACKAGE-3, Rectifier Diode 局域网 功效 瞄准线 二极管 |
| 文件： | 总5页 (文件大小：148K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
M30x5S, MB30x5S, MI30x5S
www.vishay.com
Vishay General Semiconductor
Schottky Barrier Rectifier
FEATURES
TO-220AB
• Power pack
• Guardring for overvoltage protection
• Low power loss, high efficiency
• Low forward voltage drop
• High forward surge capability
• High frequency operation
3
2
• Meets MSL level 1, per J-STD-020, LF maximum peak of
245 °C (for TO-263AB package)
1
M30xxS
PIN 1
PIN 3
PIN 2
CASE
• Solder bath temperature 275 °C maximum, 10 s per
JESD22-B106 (for TO-220AB and TO-262AA package)
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TO-263AB
TO-262AA
K
K
TYPICAL APPLICATIONS
For use in low voltage, high frequency rectifier of switching
mode power supplies, freewheeling diodes, DC/DC
converters, and polarity protection application.
A
3
NC
MB30xxS
2
MECHANICAL DATA
1
MI30xxS
Case: TO-220AB, TO-263AB, and TO-262AA
NC
A
PIN 1
K
PIN 2
K
Molding compound meets UL 94 V-0 flammability ratingꢀ
Base P/N-E3 - RoHS-compliant, commercial grade
HEATSINK
PIN 3
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102ꢀ
E3 suffix meets JESD 201 class 1A whisker test
PRIMARY CHARACTERISTICS
IF(AV)
30 A
Polarity: As marked
VRRM
35 V, 45 V
200 A
Mounting Torque: 10 in-lbs maximum
IFSM
VF at IF = 30 A
TJ max.
0.61 V
ꢀ
150 °C
TO-220AB, TO-263AB,
TO-262AA
Package
Diode variations
Single
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
M(B,I)3035S
M(B,I)3045S
UNIT
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (fig.1)
VRRM
35
45
V
A
IF(AV)
30
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
IFSM
200
A
Peak repetitive reverse current at tp = 2.0 μs, 1 kHz
Voltage rate of change (rated VR)
IRRM
dV/dt
TJ
2.0
10 000
V/μs
°C
- 65 to + 150
- 65 to + 175
Operating junction and storage temperature range
TSTG
Revision: 13-Aug-13
Document Number: 88952
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
M30x5S, MB30x5S, MI30x5S
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
TYP.
0.54
0.65
0.46
0.61
40
MAX.
-
UNIT
IF = 15 A
TJ = 25 °C
IF = 30 A
IF = 15 A
IF = 30 A
0.70
-
(1)
Maximum instantaneous forward voltage
VF
V
TJ = 125 °C
0.66
200
55
TJ = 25 °C
μA
mA
pF
Maximum instantaneous reverse current at DC
blocking voltage
(2)
IR
Rated VR
TJ = 125 °C
26
Typical junction capacitance
CJ
4.0 V, 1 MHz
980
Note
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
Pulse test: Pulse width d 40 ms
(2)
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
M30xxS
MB30xxS
MI30xxS
UNIT
°C/W
Typical thermal resistance
RTJC
2.0
ORDERING INFORMATION (Example)
PACKAGE
TO-220AB
TO-263AB
TO-263AB
TO-263AA
PREFERRED P/N
M3045S-E3/4W
MB3045S-E3/4W
MB3045S-E3/8W
MI3045S-E3/4W
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
50/tube
DELIVERY MODE
Tube
1.878
1.37
4W
4W
8W
4W
50/tube
Tube
1.37
800/reel
Tape and reel
Tube
1.454
50/tube
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
35
30
25
20
15
10
5
300
250
200
150
100
50
M(B,I)30xxS
TJ = TJ Max.
8.3 ms Single Half Sine-Wave
M30xxS
0
0
0
25
50
75
100
125
150
1
10
100
Case Temperature (°C)
Number of Cycles at 60 Hz
Fig. 1 - Forward Current Derating Curve
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Revision: 13-Aug-13
Document Number: 88952
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
M30x5S, MB30x5S, MI30x5S
www.vishay.com
Vishay General Semiconductor
100
10
10
Junction to Case
TJ = 150 °C
TJ = 125 °C
1
1
TJ = 25 °C
0.1
0.01
Pulse Width = 300 μs
1 % Duty Cycle
M(I)30xxS
10 100
0.1
0.01
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
Instantaneous Forward Voltage (V)
0.1
1
t - Pulse Duration (s)
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 6 - Typical Transient Thermal Impedance
1000
10
Junction to Case
TJ = 150 °C
100
10
TJ = 125 °C
1
1
0.1
TJ = 25 °C
0.01
0.001
MB30xxS
0.1
0.01
10 20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
0.1
1
10
100
t - Pulse Duration (s)
Fig. 4 - Typical Reverse Characteristics
Fig. 7 - Typical Transient Thermal Impedance
10 000
1000
100
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
0.1
1
10
100
Reverse Voltage (V)
Fig. 5 - Typical Junction Capacitance
ꢀ
Revision: 13-Aug-13
Document Number: 88952
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
M30x5S, MB30x5S, MI30x5S
www.vishay.com
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-220AB
0.415 (10.54) MAX.
0.185 (4.70)
0.175 (4.44)
0.055 (1.39)
0.045 (1.14)
0.370 (9.40)
0.360 (9.14)
0.154 (3.91)
0.148 (3.74)
0.113 (2.87)
0.103 (2.62)
0.145 (3.68)
0.135 (3.43)
0.603 (15.32)
0.573 (14.55)
0.635 (16.13)
0.625 (15.87)
PIN
2
0.350 (8.89)
0.330 (8.38)
1
3
0.160 (4.06)
0.140 (3.56)
1.148 (29.16)
1.118 (28.40)
0.110 (2.79)
0.100 (2.54)
0.057 (1.45)
0.045 (1.14)
0.560 (14.22)
0.530 (13.46)
0.105 (2.67)
0.095 (2.41)
0.035 (0.90)
0.028 (0.70)
0.205 (5.20)
0.195 (4.95)
0.104 (2.65)
0.096 (2.45)
0.022 (0.56)
0.014 (0.36)
TO-262AA
0.185 (4.70)
0.175 (4.44)
0.411 (10.45)
Max.
0.055 (1.40)
0.047 (1.19)
0.250 (6.35)
Min.
30° (Typ)
(REF)
0.055 (1.40)
0.045 (1.14)
K
0.350 (8.89)
0.330 (8.38)
0.401 (10.19)
0.381 (9.68)
0.950 (24.13)
0.920 (23.37)
PIN
0.510 (12.95)
0.470 (11.94)
1
2
3
0.160 (4.06)
0.140 (3.56)
0.110 (2.79)
0.100 (2.54)
0.560 (14.22)
0.530 (13.46)
0.057 (1.45)
0.045 (1.14)
0.035 (0.90)
0.028 (0.70)
0.022 (0.56)
0.014 (0.35)
0.104 (2.65)
0.096 (2.45)
0.205 (5.20)
0.195 (4.95)
TO-263AB
0.411 (10.45)
0.380 (9.65)
0.245 (6.22)
MIN.
0.190 (4.83)
0.160 (4.06)
Mounting Pad Layout
0.055 (1.40)
0.045 (1.14)
0.42 (10.66) MIN.
K
0.055 (1.40)
0.047 (1.19)
0.33 (8.38) MIN.
0.360 (9.14)
0.320 (8.13)
0.624 (15.85)
0.591 (15.00)
NC
K
A
0.670 (17.02)
0 to 0.01 (0 to 0.254)
0.110 (2.79)
0.591 (15.00)
0.090 (2.29)
0.021 (0.53)
0.037 (0.940)
0.027 (0.686)
0.15 (3.81) MIN.
0.014 (0.36)
0.105 (2.67)
0.095 (2.41)
0.08 (2.032) MIN.
0.140 (3.56)
0.110 (2.79)
0.205 (5.20)
0.195 (4.95)
0.105 (2.67)
0.095 (2.41)
Revision: 13-Aug-13
Document Number: 88952
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
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Vishay
Disclaimer
ꢀ
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Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
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including but not limited to the warranty expressed therein.
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© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
Document Number: 91000
1
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