MBR25H45CT-HE3/45 [VISHAY]

DIODE 15 A, 45 V, SILICON, RECTIFIER DIODE, TO-220AB, ROHS COMPLIANT PACKAGE-3, Rectifier Diode;


型号：	MBR25H45CT-HE3/45
厂家：	VISHAY
描述：	DIODE 15 A, 45 V, SILICON, RECTIFIER DIODE, TO-220AB, ROHS COMPLIANT PACKAGE-3, Rectifier Diode
文件：	总5页 (文件大小：133K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

New Product

MBR(F,B)25H35CT thru MBR(F,B)25H60CT

Vishay General Semiconductor

Dual Common-Cathode Schottky Rectifier

High Barrier Technology for Improved High Temperature Performance

FEATURES

TO-220AB

ITO-220AB

• Guardring for overvoltage protection

• Lower power losses, high efficiency

• Low forward voltage drop

• Low leakage current

• High forward surge capability

• High frequency operation

MBRF25HxxCT

MBR25HxxCT

• Meets MSL level 1, per J-STD-020, LF maximum peak of

245 °C (for TO-263AB package)

PIN 1

PIN 2

PIN 1

PIN 2

CASE

PIN 3

• Solder dip 260 °C, 40

ITO-220AB package)

(for TO-220AB and

TO-263AB

• AEC-Q101 qualified

• Compliant to RoHS directive 2002/95/EC and in

accordance to WEEE 2002/96/EC

TYPICAL APPLICATIONS

MBRB25HxxCT

For use in low voltage, high frequency rectifier of switching

mode power supplies, freewheeling diodes, dc-to-dc

converters or polarity protection application.

PIN 1

PIN 2

HEATSINK

MECHANICAL DATA

Case: TO-220AB, ITO-220AB, TO-263AB

Molding compound meets UL 94 V-0 flammability rating

PRIMARY CHARACTERISTICS

I_F(AV)

2 x 15 A

V_RRM

I_FSM

V_F

35 V to 60 V

150 A

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

E3 suffix for consumer grade, meets JESD 201 class 1A

whisker test, HE3 suffix for high reliability grade (AEC-Q101

qualified), meets JESD 201 class 2 whisker test

0.54 V, 0.60 V

100 μA

I_R

Polarity: As marked

T_Jmax.

175 °C

Mounting Torque: 10 in-lbs maximum

MAXIMUM RATINGS (T_C= 25 °C unless otherwise noted)

PARAMETER

SYMBOL MBR25H35CT MBR25H45CT MBR25H50CT MBR25H60CT UNIT

Maximum repetitive peak reverse voltage

Working peak reverse voltage

Maximum DC blocking voltage

V_RRM

V_RWM

V_DC

total device

per diode

Max. average forward

rectified current (fig. 1)

I_F(AV)

Non-repetitive avalanche energy per diode

at 25 °C, I_AS= 4 A, L = 10 mH

E_AS

I_FSM

I_RRM

E_RSM

Peak forward surge current 8.3 ms single half

sine-wave superimposed on rated load per diode

150

Peak repetitive reverse surge current per diode

at t_p= 2.0 μs, 1 kHz

1.0

0.5

Peak non-repetitive reverse energy

(8/20 μs waveform)

Document Number: 88789

Revision: 18-Mar-10

For technical questions within your region, please contact one of the following:

DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

www.vishay.com

New Product

MBR(F,B)25H35CT thru MBR(F,B)25H60CT

Vishay General Semiconductor

MAXIMUM RATINGS (T_C= 25 °C unless otherwise noted)

PARAMETER

SYMBOL MBR25H35CT MBR25H45CT MBR25H50CT MBR25H60CT UNIT

Electrostatic discharge capacitor voltage

Human body model: C = 100 pF, R = 1.5 kΩ

V_C

Voltage rate of change (rated V_R)

dV/dt

10 000

V/μs

°C

Operating junction and storage temperature range T_J, T_STG

- 65 to + 175

Isolation voltage (ITO-220AB only)

V_AC

1500

from terminal to heatsink t = 1 min

ELECTRICAL CHARACTERISTICS (T_C= 25 °C unless otherwise noted)

MBR25H35CT

MBR25H45CT

MBR25H50CT

MBR25H60CT

PARAMETER

TEST CONDITIONS

SYMBOL

UNIT

TYP. MAX.

0.64

TYP.

MAX.

0.70

T_J= 25 °C

I_F= 15 A

T_J= 125 °C

0.50

0.54

0.74

0.67

100

0.56

0.60

0.85

0.72

100

Maximum instantaneous forward

voltage per diode

(1)

V_F

T_J= 25 °C

I_F= 30 A

T_J= 125 °C

0.63

0.68

T_J= 25 °C

μA

Maximum reverse current at rated V_R

per diode

(2)

I_R

T_J= 125 °C

6.0

4.0

Notes

(1)

Pulse test: 300 μs pulse width, 1 % duty cycle

Pulse test: Pulse width ≤ 40 ms

(2)

THERMAL CHARACTERISTICS (T_C= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

MBR

MBRF

MBRB

UNIT

Thermal resistance, junction to case per diode

R_θJC

1.5

4.5

1.5

°C/W

ORDERING INFORMATION (Example)

PACKAGE

TO-220AB

ITO-220AB

TO-263AB

TO-220AB

ITO-220AB

TO-263AB

PREFERRED P/N

UNIT WEIGHT (g)

PACKAGE CODE

BASE QUANTITY

50/tube

DELIVERY MODE

Tube

MBR25H45CT-E3/45

1.85

1.99

1.35

1.85

1.99

1.35

MBRF25H45CT-E3/45

MBRB25H45CT-E3/45

MBRB25H45CT-E3/81

MBR25H45CTHE3/45 ⁽¹⁾

MBRF25H45CTHE3/45 ⁽¹⁾

MBRB25H45CTHE3/45 ⁽¹⁾

MBRB25H45CTHE3/81 ⁽¹⁾

50/tube

Tube

50/tube

Tube

800/reel

Tape and reel

Tube

50/tube

Tube

50/tube

Tube

800/reel

Tape and reel

Note

(1)

AEC-Q101 qualified

www.vishay.com

For technical questions within your region, please contact one of the following:

DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

Document Number: 88789

Revision: 18-Mar-10

New Product

MBR(F,B)25H35CT thru MBR(F,B)25H60CT

Vishay General Semiconductor

RATINGS AND CHARACTERISTICS CURVES

(T_A= 25 °C unless otherwise noted)

100

MBR, MBRB

T_J= 150 °C

_J= 125 °C

MBRF

0.1

0.01

MBR25H35CT, MBR25H45CT

MBR25H50CT, MBR25H60CT

0.001

0.0001

_J= 25 °C

100

125

150

175

100

Case Temperature (°C)

Percent of Rated Peak Reverse Voltage (%)

Fig. 1 - Forward Derating Curve (Total)

Fig. 4 - Typical Reverse Characteristics Per Diode

150

125

100

10 000

T_J= T_JMax.

8.3 ms Single Half Sine-Wave

T_J= 25 °C

f = 1.0 MHz

V_sig= 50 mV_p-p

1000

MBR25H35CT, MBR25H45CT

MBR25H50CT, MBR25H60CT

100

0.1

100

Number of Cycles at 60 Hz

Reverse Voltage (V)

Fig. 2 - Maximum Non-Repetitive Peak Forward

Surge Current Per Diode

Fig. 5 - Typical Junction Capacitance Per Diode

100

T_J= 150 °C

T_J= 25 °C

_J= 125 °C

0.1

0.01

MBR25H35CT, MBR25H45CT

MBR25H50CT, MBR25H60CT

0.1

0.01

0.1

0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

t - Pulse Duration (s)

Instantaneous Forward Voltage (V)

Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode

Fig. 6 - Typical Transient Thermal Impedance Per Diode

Document Number: 88789

Revision: 18-Mar-10

For technical questions within your region, please contact one of the following:

DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

www.vishay.com

New Product

MBR(F,B)25H35CT thru MBR(F,B)25H60CT

Vishay General Semiconductor

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)

TO-220AB

ITO-220AB

0.190 (4.83)

0.170 (4.32)

0.110 (2.79)

0.100 (2.54)

0.404 (10.26)

0.415 (10.54) MAX.

0.384 (9.75)

0.185 (4.70)

0.175 (4.44)

0.055 (1.39)

0.045 (1.14)

0.076 (1.93) REF.

0.370 (9.40)

0.360 (9.14)

0.154 (3.91)

0.148 (3.74)

7° REF.

0.113 (2.87)

0.103 (2.62)

45° REF.

0.140 (3.56) DIA.

0.125 (3.17) DIA.

0.135 (3.43) DIA.

0.122 (3.08) DIA.

0.145 (3.68)

0.135 (3.43)

0.671 (17.04)

0.651 (16.54)

0.600 (15.24)

7° REF.

0.580 (14.73)

0.603 (15.32)

0.573 (14.55)

0.350 (8.89)

0.330 (8.38)

0.635 (16.13)

0.625 (15.87)

0.350 (8.89)

0.330 (8.38)

7° REF.

0.160 (4.06)

0.140 (3.56)

1.148 (29.16)

1.118 (28.40)

0.191 (4.85)

0.171 (4.35)

0.560 (14.22)

0.530 (13.46)

0.110 (2.79)

0.100 (2.54)

0.110 (2.79)

0.100 (2.54)

0.057 (1.45)

0.045 (1.14)

0.057 (1.45)

0.045 (1.14)

0.560 (14.22)

0.530 (13.46)

0.057 (1.45)

0.045 (1.14)

0.105 (2.67)

0.095 (2.41)

0.035 (0.89)

0.025 (0.64)

0.035 (0.90)

0.028 (0.70)

0.205 (5.20)

0.195 (4.95)

0.025 (0.64)

0.015 (0.38)

0.105 (2.67)

0.095 (2.41)

0.028 (0.71)

0.020 (0.51)

0.104 (2.65)

0.096 (2.45)

0.022 (0.56)

0.014 (0.36)

0.205 (5.21)

0.195 (4.95)

TO-263AB

0.411 (10.45)

0.380 (9.65)

0.245 (6.22)

MIN.

0.190 (4.83)

0.160 (4.06)

Mounting Pad Layout

0.055 (1.40)

0.045 (1.14)

0.42 (10.66) MIN.

0.055 (1.40)

0.047 (1.19)

0.33 (8.38) MIN.

0.360 (9.14)

0.320 (8.13)

0.624 (15.85)

0.591 (15.00)

0.670 (17.02)

0.591 (15.00)

0 to 0.01 (0 to 0.254)

0.110 (2.79)

0.090 (2.29)

0.021 (0.53)

0.014 (0.36)

0.037 (0.940)

0.027 (0.686)

0.15 (3.81) MIN.

0.105 (2.67)

0.095 (2.41)

0.08 (2.032) MIN.

0.140 (3.56)

0.110 (2.79)

0.205 (5.20)

0.195 (4.95)

0.105 (2.67)

0.095 (2.41)

www.vishay.com

For technical questions within your region, please contact one of the following:

DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

Document Number: 88789

Revision: 18-Mar-10

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Disclaimer

All product specifications and data are subject to change without notice.

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or in any other disclosure relating to any product.

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otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed

therein, which apply to these products.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this

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The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless

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Document Number: 91000

Revision: 18-Jul-08

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