MBR25H45CTHE3/45 [VISHAY]

Dual Common-Cathode Schottky Rectifier; 双共阴极肖特基整流器
MBR25H45CTHE3/45
型号: MBR25H45CTHE3/45
厂家: VISHAY    VISHAY
描述:

Dual Common-Cathode Schottky Rectifier
双共阴极肖特基整流器

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中文:  中文翻译
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New Product  
MBR(F,B)25H35CT thru MBR(F,B)25H60CT  
Vishay General Semiconductor  
Dual Common-Cathode Schottky Rectifier  
High Barrier Technology for Improved High Temperature Performance  
FEATURES  
TO-220AB  
ITO-220AB  
• Guardring for overvoltage protection  
• Lower power losses, high efficiency  
• Low forward voltage drop  
• Low leakage current  
• High forward surge capability  
• High frequency operation  
3
3
2
2
1
1
MBRF25HxxCT  
MBR25HxxCT  
• Meets MSL level 1, per J-STD-020, LF maximum  
peak of 245 °C (for TO-263AB package)  
• Solder dip 260 °C, 40 s (for TO-220AB and  
ITO-220AB package)  
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
PIN 1  
PIN 2  
PIN 1  
PIN 3  
PIN 2  
CASE  
PIN 3  
TO-263AB  
K
2
TYPICAL APPLICATIONS  
1
For use in low voltage, high frequency rectifier of  
switching mode power supplies, freewheeling diodes,  
dc-to-dc converters or polarity protection application.  
MBRB25HxxCT  
PIN 1  
K
PIN 2  
HEATSINK  
MECHANICAL DATA  
Case: TO-220AB, ITO-220AB, TO-263AB  
Epoxy meets UL 94V-0 flammability rating  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD22-B102  
E3 suffix for consumer grade, meets JESD 201 class  
1A whisker test, HE3 suffix for high reliability grade  
(AEC Q101 qualified), meets JESD 201 class 2  
whisker test  
PRIMARY CHARACTERISTICS  
IF(AV)  
VRRM  
IFSM  
VF  
15 A x 2  
35 V to 60 V  
150 A  
0.54 V, 0.60 V  
100 µA  
IR  
TJ max.  
175 °C  
Polarity: As marked  
Mounting Torque: 10 in-lbs maximum  
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)  
C
PARAMETER  
SYMBOL MBR25H35CT MBR25H45CT MBR25H50CT MBR25H60CT UNIT  
Maximum repetitive peak reverse voltage  
Working peak reverse voltage  
Maximum DC blocking voltage  
VRRM  
VRWM  
VDC  
35  
35  
35  
45  
45  
45  
50  
50  
50  
60  
60  
60  
V
V
V
Max. average forward rectified  
current (Fig. 1)  
total device  
per diode  
30  
15  
IF(AV)  
A
mJ  
A
Non-repetitive avalanche energy per diode at 25 °C,  
AS = 4 A, L = 10 mH  
EAS  
80  
I
Peak forward surge current 8.3 ms single half  
sine-wave superimposed on rated load per diode  
IFSM  
150  
Peak repetitive reverse surge current per diode  
at tp = 2.0 µs, 1 kHz  
IRRM  
1.0  
0.5  
A
Document Number: 88789  
Revision: 19-May-08  
For technical questions within your region, please contact one of the following:  
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com  
www.vishay.com  
1
MBR(F,B)25H35CT thru MBRN(Few,BP)r2o5duHc6t 0CT  
Vishay General Semiconductor  
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)  
C
PARAMETER  
SYMBOL MBR25H35CT MBR25H45CT MBR25H50CT MBR25H60CT UNIT  
Peak non-repetitive reverse energy  
(8/20 µs waveform)  
ERSM  
25  
20  
mJ  
kV  
Electrostatic discharge capacitor voltage  
Human body model: C = 100 pF, R = 1.5 kΩ  
VC  
25  
Voltage rate of change (rated VR)  
Operating junction temperature range  
Storage temperature range  
dV/dt  
TJ  
10 000  
V/µs  
°C  
- 65 to + 175  
- 65 to + 175  
TSTG  
°C  
Isolation voltage (ITO-220AB only)  
from terminal to heatsink t = 1 min  
VAC  
1500  
V
ELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise noted)  
C
MBR25H35CT  
MBR25H45CT  
MBR25H50CT  
MBR25H60CT  
PARAMETER  
TEST CONDITIONS  
SYMBOL  
UNIT  
TYP. MAX.  
TYP.  
MAX.  
IF = 15 A  
TJ = 25 °C  
TJ = 125 °C  
TJ = 25 °C  
TJ = 125 °C  
-
0.64  
-
0.70  
0.60  
0.85  
0.72  
Maximum instantaneous forward voltage IF = 15 A  
0.50  
-
0.63  
0.54  
0.74  
0.67  
0.56  
-
0.68  
VF  
V
per diode (1)  
IF = 30 A  
IF = 30 A  
Maximum reverse current at rated VR  
per diode (2)  
TJ = 25 °C  
TJ = 125 °C  
-
100  
20  
-
100  
20  
µA  
mA  
IR  
6.0  
4.0  
Notes:  
(1) Pulse test: 300 µs pulse width, 1 % duty cycle  
(2) Pulse test: Pulse width 40 ms  
THERMAL CHARACTERISTICS (T = 25 °C unless otherwise noted)  
C
PARAMETER  
SYMBOL  
MBR  
MBRF  
MBRB  
UNIT  
Thermal resistance, junction to case per diode  
RθJC  
1.5  
4.5  
1.5  
°C/W  
ORDERING INFORMATION (Example)  
PACKAGE  
TO-220AB  
ITO-220AB  
TO-263AB  
TO-263AB  
TO-220AB  
ITO-220AB  
TO-263AB  
TO-263AB  
PREFERRED P/N  
UNIT WEIGHT (g)  
PACKAGE CODE  
BASE QUANTITY  
50/tube  
DELIVERY MODE  
Tube  
MBR25H45CT-E3/45  
1.85  
1.99  
1.35  
1.35  
1.85  
1.99  
1.35  
1.35  
45  
45  
45  
81  
45  
45  
45  
81  
MBR25H45CT-E3/45  
50/tube  
Tube  
MBRB25H45CT-E3/45  
MBRB25H45CT-E3/81  
MBR25H45CTHE3/45 (1)  
MBR25H45CTHE3/45 (1)  
MBRB25H45CTHE3/45 (1)  
MBRB25H45CTHE3/81 (1)  
50/tube  
Tube  
800/reel  
50/tube  
Tape and reel  
Tube  
50/tube  
Tube  
50/tube  
Tube  
800/reel  
Tape and reel  
Note:  
(1) Automotive grade AEC Q101 qualified  
www.vishay.com  
2
For technical questions within your region, please contact one of the following:  
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com  
Document Number: 88789  
Revision: 19-May-08  
New Product  
MBR(F,B)25H35CT thru MBR(F,B)25H60CT  
Vishay General Semiconductor  
RATINGS AND CHARACTERISTICS CURVES  
(T = 25 °C unless otherwise noted)  
A
40  
30  
100  
10  
MBR, MBRB  
TJ = 150 °C  
1
T
J = 125 °C  
MBRF  
20  
10  
0
0.1  
0.01  
MBR25H35CT - MBR25H45CT  
MBR25H50CT - MBR25H60CT  
0.001  
0.0001  
TJ = 25 °C  
0
25  
75  
100  
125  
150  
175  
0
20  
40  
60  
80  
100  
50  
Case Temperature (°C)  
Percent of Rated Peak Reverse Voltage (%)  
Figure 1. Forward Derating Curve (Total)  
Figure 4. Typical Reverse Characteristics Per Diode  
150  
125  
100  
75  
10 000  
TJ = 25 °C  
f = 1.0 MHz  
Vsig = 50 mVp-p  
TJ = TJ Max.  
8.3 ms Single Half Sine-Wave  
1000  
50  
25  
MBR25H35CT - MBR25H45CT  
MBR25H50CT - MBR25H60CT  
0
100  
1
10  
100  
0.1  
1
10  
100  
Number of Cycles at 60 Hz  
Reverse Voltage (V)  
Figure 2. Maximum Non-Repetitive Peak Forward  
Surge Current Per Diode  
Figure 5. Typical Junction Capacitance Per Diode  
100  
10  
TJ = 150 °C  
10  
1
TJ = 25 °C  
1
TJ = 125 °C  
0.1  
0.01  
MBR25H35CT - MBR25H45CT  
MBR25H50CT - MBR25H60CT  
0.1  
0.01  
0.1  
1
10  
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0  
Instantaneous Forward Voltage (V)  
t - Pulse Duration (s)  
Figure 3. Typical Instantaneous Forward Characteristics Per Diode  
Figure 6. Typical Transient Thermal Impedance Per Diode  
Document Number: 88789  
Revision: 19-May-08  
For technical questions within your region, please contact one of the following:  
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com  
www.vishay.com  
3
MBR(F,B)25H35CT thru MBRN(Few,BP)r2o5duHc6t 0CT  
Vishay General Semiconductor  
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)  
TO-220AB  
ITO-220AB  
0.190 (4.83)  
0.170 (4.32)  
0.110 (2.79)  
0.100 (2.54)  
0.404 (10.26)  
0.384 (9.75)  
0.415 (10.54) MAX.  
0.185 (4.70)  
0.175 (4.44)  
0.055 (1.39)  
0.045 (1.14)  
0.076 (1.93) REF.  
0.076 (1.93) REF.  
0.370 (9.40)  
0.360 (9.14)  
0.154 (3.91)  
0.148 (3.74)  
7° REF.  
0.113 (2.87)  
45° REF.  
0.140 (3.56) DIA.  
0.125 (3.17) DIA.  
0.135 (3.43) DIA.  
0.103 (2.62)  
0.122 (3.08) DIA.  
0.145 (3.68)  
0.671 (17.04)  
0.651 (16.54)  
0.600 (15.24)  
7° REF.  
0.135 (3.43)  
0.580 (14.73)  
PIN  
0.603 (15.32)  
0.573 (14.55)  
0.350 (8.89)  
0.330 (8.38)  
0.635 (16.13)  
0.625 (15.87)  
PIN  
0.350 (8.89)  
0.330 (8.38)  
1
2
3
1
2
3
7° REF.  
0.160 (4.06)  
0.140 (3.56)  
1.148 (29.16)  
1.118 (28.40)  
0.191 (4.85)  
0.171 (4.35)  
0.560 (14.22)  
0.530 (13.46)  
0.110 (2.79)  
0.100 (2.54)  
0.110 (2.79)  
0.100 (2.54)  
0.057 (1.45)  
0.045 (1.14)  
0.057 (1.45)  
0.045 (1.14)  
0.560 (14.22)  
0.530 (13.46)  
0.057 (1.45)  
0.045 (1.14)  
0.105 (2.67)  
0.095 (2.41)  
0.035 (0.89)  
0.035 (0.90)  
0.028 (0.70)  
0.205 (5.20)  
0.195 (4.95)  
0.025 (0.64)  
0.015 (0.38)  
0.105 (2.67)  
0.095 (2.41)  
0.028 (0.71)  
0.025 (0.64)  
0.104 (2.65)  
0.096 (2.45)  
0.020 (0.51)  
0.022 (0.56)  
0.014 (0.36)  
0.205 (5.21)  
0.195 (4.95)  
TO-263AB  
0.411 (10.45)  
0.380 (9.65)  
0.245 (6.22)  
MIN.  
0.190 (4.83)  
Mounting Pad Layout  
0.42 (10.66) MIN.  
0.055 (1.40)  
0.045 (1.14)  
0.160 (4.06)  
K
0.055 (1.40)  
0.047 (1.19)  
0.33 (8.38) MIN.  
0.360 (9.14)  
0.320 (8.13)  
0.624 (15.85)  
1
K
2
0.591 (15.00)  
0.670 (17.02)  
0.591 (15.00)  
0 to 0.01 (0 to 0.254)  
0.110 (2.79)  
0.090 (2.29)  
0.021 (0.53)  
0.014 (0.36)  
0.037 (0.940)  
0.15 (3.81) MIN.  
0.027 (0.686)  
0.105 (2.67)  
0.095 (2.41)  
0.08 (2.032) MIN.  
0.140 (3.56)  
0.110 (2.79)  
0.205 (5.20)  
0.195 (4.95)  
0.105 (2.67)  
0.095 (2.41)  
www.vishay.com  
4
For technical questions within your region, please contact one of the following:  
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com  
Document Number: 88789  
Revision: 19-May-08  
Legal Disclaimer Notice  
Vishay  
Disclaimer  
All product specifications and data are subject to change without notice.  
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf  
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein  
or in any other disclosure relating to any product.  
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any  
information provided herein to the maximum extent permitted by law. The product specifications do not expand or  
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed  
therein, which apply to these products.  
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this  
document or by any conduct of Vishay.  
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless  
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such  
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting  
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding  
products designed for such applications.  
Product names and markings noted herein may be trademarks of their respective owners.  
Document Number: 91000  
Revision: 18-Jul-08  
www.vishay.com  
1

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