MBR25H50CT-E3/45 [VISHAY]

DIODE 15 A, 50 V, SILICON, RECTIFIER DIODE, TO-220AB, ROHS COMPLIANT PACKAGE-3, Rectifier Diode;


型号：	MBR25H50CT-E3/45
厂家：	VISHAY
描述：	DIODE 15 A, 50 V, SILICON, RECTIFIER DIODE, TO-220AB, ROHS COMPLIANT PACKAGE-3, Rectifier Diode 局域网功效瞄准线二极管
文件：	总5页 (文件大小：149K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

MBR25HxxCT, MBRF25HxxCT, MBRB25HxxCT

www.vishay.com

Vishay General Semiconductor

Dual Common Cathode Schottky Rectifier

High Barrier Technology for Improved High Temperature Performance

FEATURES

TO-220AB

ITO-220AB

• Power pack

• Guardring for overvoltage protection

• Lower power losses, high efficiency

• Low forward voltage drop

• Low leakage current

• High forward surge capability

• High frequency operation

MBRF25HxxCT

MBR25HxxCT

• Meets MSL level 1, per J-STD-020, LF maximum peak of

245 °C (for TO-263AB package)

PIN 1

PIN 2

PIN 1

PIN 3

PIN 2

CASE

PIN 3

• Solder bath temperature 275 °C maximum, 10 s, per

JESD 22-B106 (for TO-220AB and ITO-220AB package)

TO-263AB

• AEC-Q101 qualified

• Material categorization: For definitions of compliance

please see www.vishay.com/doc?99912

TYPICAL APPLICATIONS

MBRB25HxxCT

For use in low voltage, high frequency rectifier of switching

mode power supplies, freewheeling diodes, DC/DC

converters, or polarity protection application.

PIN 1

PIN 2

HEATSINK

MECHANICAL DATA

PRIMARY CHARACTERISTICS

Case: TO-220AB, ITO-220AB, TO-263AB

I_F(AV)

V_RRM

I_FSM

V_F

2 x 15 A

Molding compound meets UL 94 V-0 flammability rating

Base P/N-E3 - RoHS-compliant, commercial grade

Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified

35 V to 60 V

150 A

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix

0.54 V, 0.60 V

100 μA

I_R

T_Jmax.

Package

175 °C

meets JESD 201 class 2 whisker test

TO-220AB, ITO-220AB, TO-263AB

Common cathode

Polarity: As marked

Diode variations

Mounting Torque: 10 in-lbs maximum

MAXIMUM RATINGS (T_C= 25 °C unless otherwise noted)

PARAMETER

SYMBOL MBR25H35CT MBR25H45CT MBR25H50CT MBR25H60CT UNIT

Maximum repetitive peak reverse voltage

Working peak reverse voltage

Maximum DC blocking voltage

V_RRM

V_RWM

V_DC

total device

per diode

Max. average forward

rectified current (fig. 1)

I_F(AV)

Non-repetitive avalanche energy per diode

E_AS

I_FSM

I_RRM

E_RSM

at 25 °C, I_AS= 4 A, L = 10 mH

Peak forward surge current 8.3 ms single half

sine-wave superimposed on rated load per diode

150

Peak repetitive reverse surge current per diode

at t_p= 2.0 μs, 1 kHz

1.0

0.5

Peak non-repetitive reverse energy

(8/20 μs waveform)

Revision: 12-Jun-13

Document Number: 88789

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

MBR25HxxCT, MBRF25HxxCT, MBRB25HxxCT

www.vishay.com

Vishay General Semiconductor

MAXIMUM RATINGS (T_C= 25 °C unless otherwise noted)

PARAMETER

SYMBOL MBR25H35CT MBR25H45CT MBR25H50CT MBR25H60CT UNIT

Electrostatic discharge capacitor voltage

Human body model: C = 100 pF, R = 1.5 k

V_C

Voltage rate of change (rated V_R)

dV/dt

10 000

V/μs

°C

Operating junction and storage temperature range T_J, T_STG

- 65 to + 175

Isolation voltage (ITO-220AB only)

V_AC

1500

from terminal to heatsink t = 1 min

ELECTRICAL CHARACTERISTICS (T_C= 25 °C unless otherwise noted)

MBR25H35CT

MBR25H45CT

MBR25H50CT

MBR25H60CT

PARAMETER

SYMBOL

TEST CONDITIONS

UNIT

TYP. MAX.

TYP.

MAX.

0.70

T_J= 25 °C

0.50

0.64

0.54

0.74

0.67

100

I_F= 15 A

T_J= 125 °C

T_J= 25 °C

T_J= 125 °C

T_J= 25 °C

T_J= 125 °C

0.56

0.60

0.85

0.72

100

Maximum instantaneous forward

voltage per diode

(1)

V_F

I_F= 30 A

Rated V_R

0.63

0.68

μA

(2)

Maximum reverse current per diode

I_R

6.0

4.0

Notes

(1)

Pulse test: 300 μs pulse width, 1 % duty cycle

Pulse test: Pulse width  40 ms

(2)

THERMAL CHARACTERISTICS (T_C= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

MBR

MBRF

MBRB

UNIT

Thermal resistance, junction to case per diode

R_JC

1.5

4.5

1.5

°C/W

ORDERING INFORMATION (Example)

PACKAGE

TO-220AB

ITO-220AB

TO-263AB

TO-220AB

ITO-220AB

TO-263AB

PREFERRED P/N

UNIT WEIGHT (g)

PACKAGE CODE BASE QUANTITY DELIVERY MODE

MBR25H45CT-E3/45

1.85

1.99

1.35

1.85

1.99

1.35

50/tube

800/reel

50/tube

800/reel

Tube

MBRF25H45CT-E3/45

MBRB25H45CT-E3/45

MBRB25H45CT-E3/81

MBR25H45CTHE3/45 ⁽¹⁾

MBRF25H45CTHE3/45 ⁽¹⁾

MBRB25H45CTHE3/45 ⁽¹⁾

MBRB25H45CTHE3/81 ⁽¹⁾

Tube

Tape and reel

Tube

Tape and reel

Note

(1)

AEC-Q101 qualified

Revision: 12-Jun-13

Document Number: 88789

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

MBR25HxxCT, MBRF25HxxCT, MBRB25HxxCT

www.vishay.com

Vishay General Semiconductor

RATINGS AND CHARACTERISTICS CURVES

(T_A= 25 C unless otherwise noted)

100

MBR, MBRB

T_J= 150 °C

_J= 125 °C

MBRF

0.1

0.01

MBR25H35CT, MBR25H45CT

MBR25H50CT, MBR25H60CT

0.001

0.0001

T_J= 25 °C

100

125

150

175

100

Case Temperature (°C)

Percent of Rated Peak Reverse Voltage (%)

Fig. 1 - Forward Derating Curve (Total)

Fig. 4 - Typical Reverse Characteristics Per Diode

150

125

100

10 000

T_J= T_JMax.

8.3 ms Single Half Sine-Wave

T_J= 25 °C

f = 1.0 MHz

V_sig= 50 mV_p-p

1000

MBR25H35CT, MBR25H45CT

MBR25H50CT, MBR25H60CT

100

0.1

100

Number of Cycles at 60 Hz

Reverse Voltage (V)

Fig. 2 - Maximum Non-Repetitive Peak Forward

Surge Current Per Diode

Fig. 5 - Typical Junction Capacitance Per Diode

100

T_J= 150 °C

T_J= 25 °C

_J= 125 °C

0.1

0.01

MBR25H35CT, MBR25H45CT

MBR25H50CT, MBR25H60CT

0.1

0.01

0.1

0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

t - Pulse Duration (s)

Instantaneous Forward Voltage (V)

Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode

Fig. 6 - Typical Transient Thermal Impedance Per Diode

Revision: 12-Jun-13

Document Number: 88789

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

MBR25HxxCT, MBRF25HxxCT, MBRB25HxxCT

www.vishay.com

Vishay General Semiconductor

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)

TO-220AB

ITO-220AB

0.190 (4.83)

0.170 (4.32)

0.110 (2.79)

0.100 (2.54)

0.404 (10.26)

0.384 (9.75)

0.415 (10.54) MAX.

0.185 (4.70)

0.175 (4.44)

0.055 (1.39)

0.045 (1.14)

0.370 (9.40)

0.360 (9.14)

0.154 (3.91)

0.148 (3.74)

0.076 (1.93) REF.

7° REF.

0.113 (2.87)

0.103 (2.62)

45° REF.

0.140 (3.56) DIA.

0.125 (3.17) DIA.

0.135 (3.43) DIA.

0.122 (3.08) DIA.

0.145 (3.68)

0.135 (3.43)

0.671 (17.04)

0.651 (16.54)

0.600 (15.24)

7° REF.

0.580 (14.73)

0.603 (15.32)

0.573 (14.55)

0.635 (16.13)

0.625 (15.87)

0.350 (8.89)

0.330 (8.38)

0.350 (8.89)

0.330 (8.38)

7° REF.

0.160 (4.06)

0.140 (3.56)

1.148 (29.16)

1.118 (28.40)

0.191 (4.85)

0.171 (4.35)

0.110 (2.79)

0.100 (2.54)

0.560 (14.22)

0.530 (13.46)

0.110 (2.79)

0.100 (2.54)

0.057 (1.45)

0.045 (1.14)

0.057 (1.45)

0.045 (1.14)

0.560 (14.22)

0.530 (13.46)

0.057 (1.45)

0.045 (1.14)

0.105 (2.67)

0.095 (2.41)

0.035 (0.90)

0.028 (0.70)

0.205 (5.20)

0.195 (4.95)

0.035 (0.89)

0.025 (0.64)

0.015 (0.38)

0.105 (2.67)

0.095 (2.41)

0.028 (0.71)

0.020 (0.51)

0.104 (2.65)

0.096 (2.45)

0.022 (0.56)

0.014 (0.36)

0.205 (5.21)

0.195 (4.95)

TO-263AB

Mounting Pad Layout

0.411 (10.45)

0.190 (4.83)

0.160 (4.06)

0.42 (10.66) MIN.

0.380 (9.65)

0.245 (6.22)

MIN.

0.055 (1.40)

0.045 (1.14)

0.33 (8.38) MIN.

0.055 (1.40)

0.047 (1.19)

0.360 (9.14)

0.320 (8.13)

0.624 (15.85)

0.670 (17.02)

0.591 (15.00)

0 to 0.01 (0 to 0.254)

0.110 (2.79)

0.090 (2.29)

0.021 (0.53)

0.014 (0.36)

0.15 (3.81) MIN.

0.037 (0.940)

0.027 (0.686)

0.08 (2.032) MIN.

0.105 (2.67)

0.095 (2.41)

0.140 (3.56)

0.110 (2.79)

0.105 (2.67)

0.095 (2.41)

0.205 (5.20)

0.195 (4.95)

Revision: 12-Jun-13

Document Number: 88789

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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Revision: 13-Jun-16

Document Number: 91000

MBR25H50CT-E3/45 [VISHAY]

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