MBR30H10PT [VISHAY]

Dual Common-Cathode High-Voltage Schottky Rectifier; 双共阴极高压肖特基整流器
MBR30H10PT
型号: MBR30H10PT
厂家: VISHAY    VISHAY
描述:

Dual Common-Cathode High-Voltage Schottky Rectifier
双共阴极高压肖特基整流器

高压
文件: 总4页 (文件大小:325K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
MBR30H90PT & MBR30H100PT  
Vishay General Semiconductor  
Dual Common-Cathode High-Voltage Schottky Rectifier  
High Barrier Technology for Improved High Temperature Performance  
FEATURES  
• Guardring for overvoltage protection  
• Lower power losses, high efficiency  
• Low forward voltage drop  
• Low leakage current  
3
• High forward surge capability  
2
1
• High frequency operation  
TO-247AD (TO-3P)  
PIN 2  
• Solder dip 260 °C, 40 s  
PIN 1  
PIN 3  
CASE  
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
TYPICAL APPLICATIONS  
For use in high frequency rectifier of switching mode  
power supplies, freewheeling diodes, dc-to-dc  
converters or polarity protection application.  
PRIMARY CHARACTERISTICS  
IF(AV)  
VRRM  
IFSM  
VF  
15 A x 2  
90 V, 100 V  
265 A  
MECHANICAL DATA  
Case: TO-247AD (TO-3P)  
0.67 V  
Epoxy meets UL 94V-0 flammability rating  
IR  
5.0 µA  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD22-B102  
TJ max.  
175 °C  
E3 suffix for consumer grade, meets JESD 201 class  
1A whisker test  
Polarity: As marked  
Mounting Torque: 10 in-lbs maximum  
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)  
A
PARAMETER  
SYMBOL  
MBR30H90PT  
MBR30H100PT  
UNIT  
Maximum repetitive peak reverse voltage  
Maximum working peak reverse voltage  
Maximum DC blocking voltage  
VRRM  
VRWM  
VDC  
90  
90  
90  
100  
100  
100  
V
V
V
total device  
per diode  
30  
15  
Maximum average forward rectified current  
IF(AV)  
A
Peak forward surge current, 8.3 ms single half sine-wave  
superimposed on rated load per diode  
IFSM  
IRRM  
EAS  
265  
1.0  
7.5  
A
A
Peak repetitive reverse surge current at tp = 2 µs, f = 1 kHz  
per diode  
Non-repetitive avalanche energy (IAS = 0.5 A, L = 60 mH)  
per diode  
mJ  
Voltage rate of change at (rated VR)  
dV/dt  
10 000  
V/µs  
°C  
Operating junction and storage temperature range  
TJ, TSTG  
- 65 to + 175  
Document Number: 88678  
Revision: 25-Mar-08  
For technical questions within your region, please contact one of the following:  
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com  
www.vishay.com  
1
MBR30H90PT & MBR30H100PT  
Vishay General Semiconductor  
ELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise noted)  
A
PARAMETER  
TEST CONDITIONS  
SYMBOL  
MBR30H90PT  
MBR30H100PT  
UNIT  
IF = 15 A  
TJ = 25 °C  
TJ = 125 °C  
TJ = 25 °C  
TJ = 125 °C  
0.82  
0.67  
0.93  
0.80  
Maximum instantaneous forward  
voltage per diode (1)  
IF = 15 A  
IF = 30 A  
IF = 30 A  
VF  
V
Maximum instantaneous reverse  
current at rated DC blocking  
voltage per diode (1)  
TJ = 25 °C  
TJ = 125 °C  
5.0  
6.0  
µA  
mA  
IR  
Note:  
(1) Pulse test: 300 µs pulse width, 1 % duty cycle  
THERMAL CHARACTERISTICS (T = 25 °C unless otherwise noted)  
A
PARAMETER  
SYMBOL  
MBR30H90PT  
MBR30H100PT  
UNIT  
Thermal resistance from junction to case per diode  
RθJC  
1.6  
°C/W  
ORDERING INFORMATION (Example)  
PACKAGE  
PREFERRED P/N  
UNIT WEIGHT (g)  
PACKAGE CODE  
BASE QUANTITY  
DELIVERY MODE  
TO-247AD  
MBR30H100PT-E3/45  
6.13  
45  
30/tube  
Tube  
RATINGS AND CHARACTERISTICS CURVES  
(T = 25 °C unless otherwise noted)  
A
35  
30  
25  
20  
15  
10  
5
100  
TJ = 175 °C  
10  
1
TJ = 150 °C  
TJ = 125 °C  
TJ = 100 °C  
0.1  
TJ = 25 °C  
0
0.01  
0
25  
50  
75  
100  
125  
150  
175  
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0  
Instantaneous Forward Voltage (V)  
Case Temperature (°C)  
Figure 1. Forward Derating Curve  
Figure 2. Typical Instantaneous Forward Characteristics Per Diode  
www.vishay.com  
2
For technical questions within your region, please contact one of the following:  
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com  
Document Number: 88678  
Revision: 25-Mar-08  
MBR30H90PT & MBR30H100PT  
Vishay General Semiconductor  
10 000  
1000  
100  
10  
10 000  
1000  
100  
TJ = 150 °C  
TJ = 125 °C  
TJ = 100 °C  
1
0.1  
TJ = 25 °C  
10  
0.01  
0.1  
1
10  
100  
1000  
20  
40  
60  
80  
100  
Reverse Voltage (V)  
Percent of Rated Peak Reverse Voltage (%)  
Figure 3. Typical Reverse Characteristics Per Diode  
Figure 4. Typical Junction Capacitance Per Diode  
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)  
TO-247AD (TO-3P)  
0.245 (6.2)  
0.225 (5.7)  
0.645 (16.4)  
0.625 (15.9)  
0.203 (5.16)  
0.193 (4.90)  
0.078 (1.98) REF.  
0.323 (8.2)  
0.313 (7.9)  
30°  
10  
0.170  
(4.3)  
10° TYP.  
0.840 (21.3)  
0.820 (20.8)  
Both Sides  
0.142 (3.6)  
0.138 (3.5)  
1
2
3
1° REF.  
Both Sides  
0.086 (2.18)  
0.076 (1.93)  
0.118 (3.0)  
0.108 (2.7)  
0.127 (3.22)  
0.117 (2.97)  
0.160 (4.1)  
0.140 (3.5)  
0.795 (20.2)  
0.775 (19.6)  
0.030 (0.76)  
0.020 (0.51)  
0.225 (5.7)  
0.205 (5.2)  
0.048 (1.22)  
0.044 (1.12)  
PIN 2  
CASE  
PIN 1  
PIN 3  
Document Number: 88678  
Revision: 25-Mar-08  
For technical questions within your region, please contact one of the following:  
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com  
www.vishay.com  
3
Legal Disclaimer Notice  
Vishay  
Disclaimer  
All product specifications and data are subject to change without notice.  
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf  
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein  
or in any other disclosure relating to any product.  
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any  
information provided herein to the maximum extent permitted by law. The product specifications do not expand or  
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed  
therein, which apply to these products.  
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this  
document or by any conduct of Vishay.  
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless  
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such  
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting  
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding  
products designed for such applications.  
Product names and markings noted herein may be trademarks of their respective owners.  
Document Number: 91000  
Revision: 18-Jul-08  
www.vishay.com  
1

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