MBR30H150CT-E3/45 [VISHAY]

Dual Common-Cathode High-Voltage Schottky Rectifier; 双共阴极高压肖特基整流器


型号：	MBR30H150CT-E3/45
厂家：	VISHAY
描述：	Dual Common-Cathode High-Voltage Schottky Rectifier 双共阴极高压肖特基整流器高压
文件：	总5页 (文件大小：128K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

MBR30H150CT, MBRF30H150CT & SB30H150CT-1

Vishay General Semiconductor

Dual Common-Cathode High-Voltage Schottky Rectifier

Low Leakage Current 5.0 µA

FEATURES

TO-220AB

ITO-220AB

• Guardring for overvoltage protection

• Low power loss, high efficiency

• Low forward voltage drop

• High frequency operation

• Solder dip 260 °C, 40 s

MBRF30H150CT

MBR30H150CT

TO-262AA

• Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

TYPICAL APPLICATIONS

For use in high frequency inverters, freewheeling and

polarity protection applications.

SB30H150CT-1

MECHANICAL DATA

PIN 1

PIN 2

CASE

Case: TO-220AB, ITO-220AB, TO-262AA

PIN 3

Epoxy meets UL 94V-0 flammability rating

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD22-B102

E3 suffix for consumer grade, meets JESD 201 class

1A whisker test

PRIMARY CHARACTERISTICS

I_F(AV)

V_RRM

I_FSM

V_F

2 x 15 A

150 V

260 A

0.75 V

175 °C

Mounting Torque: 10 in-lbs maximum

Polarity: As marked

T_J

MAXIMUM RATINGS (T = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

V_RRM

MBR30H150CT

UNIT

Maximum repetitive peak reverse voltage

Working peak reverse voltage

Maximum DC blocking voltage

150

V_RWM

V_DC

total device

Maximum average forward rectified current

per diode

I_F(AV)

Peak forward surge current 8.3 ms single half sine-wave superimposed

on rated load per diode

I_FSM

260

Peak repetitive reverse current per diode at t_p= 2 µs, 1 kHz

Peak non-repetitive reverse surge energy per diode (8/20 µs waveform)

Non-repetitive avalanche energy per diode at 25 °C, I_AS= 2.0 A, L = 10 mH

Voltage rate of change (rated V_R)

I_RRM

E_RSM

E_AS

1.0

V/µs

°C

dV/dt

T_J, T_STG

V_AC

10 000

- 65 to + 175

1500

Operating junction and storage temperature range

Isolation voltage (ITO-220AB only) from terminals to heatsink t = 1 min

Document Number: 88865

Revision: 18-Apr-08

For technical questions within your region, please contact one of the following:

PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com

www.vishay.com

MBR30H150CT, MBRF30H150CT & SB30H150CT-1

Vishay General Semiconductor

ELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise noted)

PARAMETER

TEST CONDITIONS

SYMBOL

VALUE

UNIT

I_F= 15 A T_C= 25 °C

0.90

0.75

0.99

0.86

Maximum instantaneous forward

voltage per diode ⁽¹⁾

I_F= 15 A

I_F= 30 A

T_C= 125 °C

T_C= 25 °C

T_C= 125 °C

V_F

Maximum reverse current per diode

at working peak reverse voltage ⁽¹⁾

T_J= 25 °C

T_J= 125 °C

5.0

1.0

µA

I_R

Note:

(1) Pulse test: 300 µs pulse width, 1 % duty cycle

THERMAL CHARACTERISTICS (T = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

MBR

MBRF

MBRB

UNIT

Typical thermal resistance per diode

R_θJC

1.7

4.0

1.7

°C/W

ORDERING INFORMATION (Example)

PACKAGE

TO-220AB

ITO-220AB

TO-262AA

PREFERRED P/N

MBR30H150CT-E3/45

MBRF30H150CT-E3/45

SB30H150CT-1E3/45

UNIT WEIGHT (g)

PACKAGE CODE

BASE QUANTITY

50/tube

DELIVERY MODE

2.06

2.20

1.58

Tube

50/tube

RATINGS AND CHARACTERISTICS CURVES

(T = 25 °C unless otherwise noted)

280

240

200

160

120

T_J= T_JMax.

8.3 ms Single Half Sine-Wave

MBR, MBRB

MBRF

Case Temperature (°C)

Figure 1. Forward Derating Curve (Total)

100

125

150

175

100

Number of Cycles at 60 Hz

Figure 2. Maximum Non-Repetitive Peak Forward Surge

Current Per Diode

www.vishay.com

For technical questions within your region, please contact one of the following:

PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com

Document Number: 88865

Revision: 18-Apr-08

MBR30H150CT, MBRF30H150CT & SB30H150CT-1

Vishay General Semiconductor

100

10 000

T_J= 175 °C

1000

T_J= 125 °C

T_J= 75 °C

100

T_J= 25 °C

0.1

100

0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2

Reverse Voltage (V)

Instantaneous Forward Voltage (V)

Figure 3. Typical Instantaneous Forward Characteristics Per Diode

Figure 5. Typical Junction Capacitance Per Diode

10 000

100

T_J= 175 °C

1000

T_J= 125 °C

100

MBRF

T_J= 75 °C

MBR, MBRB

0.1

T_J= 25 °C

0.01

0.1

0.01

90 100

0.1

100

t - Pulse Duration (s)

Percent of Rated Peak Reverse Voltage (%)

Figure 4. Typical Reverse Characteristics Per Diode

Figure 6. Typical Transient Thermal Impedance Per Diode

Document Number: 88865

Revision: 18-Apr-08

For technical questions within your region, please contact one of the following:

PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com

www.vishay.com

MBR30H150CT, MBRF30H150CT & SB30H150CT-1

Vishay General Semiconductor

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)

TO-220AB

ITO-220AB

0.193 (4.90)

0.177 (4.50)

0.108 (2.74)

0.092 (2.34)

0.398 (10.10)

0.382 (9.70)

0.185 (4.70)

0.169 (4.30)

0.408 (10.36)

0.392 (9.96)

1.29 (3.28)

1.21 (3.08)

0.150 (3.80)

0.139 (3.54)

DIA.

0.114 (2.90)

0.106 (2.70)

0.055 (1.40)

0.047 (1.20)

DIA.

0.343 (8.70)

TYP.

0.055 (1.40)

0.049 (1.25)

0.138 (3.50)

0.122 (3.10)

0.270 (6.88)

0.255 (6.48)

0.154 (3.90)

0.138 (3.50)

0.067 (1.70)

TYP.

0.638 (16.20)

0.598 (15.20)

0.331 (8.40)

TYP.

0.633 (16.07)

0.601 (15.67)

0.634 (16.10)

0.618 (15.70)

0.370 (9.40)

0.354 (9.00)

0.630 (16.00)

0.614 (15.60)

0.320 (8.12)

0.304 (7.72)

1.161 (29.48)

1.106 (28.08)

0.264 (6.70)

0.248 (6.50)

0.118 (3.00)

0.102 (2.60)

TYP.

0.087 (2.20)

0.523 (13.28)

0.507 (12.88)

0.117 (2.96)

0.101 (2.56)

0.035 (0.90)

0.028 (0.70)

0.396 (10.05)

0.372 (9.45)

0.064 (1.62)

0.056 (1.42)

0.100 (2.54)

TYP.

0.024 (0.60)

0.018 (0.45)

0.039 (1.00)

0.024 (0.60)

0.200 (5.08) TYP.

0.058 (1.47) MAX.

0.200 (5.08) TYP.

0.024 (0.60)

0.018 (0.45)

0.100

(2.54) TYP.

TO-262AA

0.185 (4.70)

0.169 (4.30)

0.398 (10.10)

0.382 (9.70)

0.055 (1.40)

0.039 (1.00)

0.055 (1.40)

0.049 (1.25)

0.425 (10.80)

0.393 (10.00)

0.370 (9.40)

0.354 (9.00)

0.488 (12.4)

0.472 (12.00)

0.102 (2.60)

0.087 (2.20)

0.523 (13.28)

0.507 (12.88)

0.405 (10.28)

0.389 (9.88)

0.035 (0.90)

0.028 (0.70)

0.062 (1.57)

0.054 (1.37)

0.024 (0.60)

0.018 (0.45)

0.100

(2.54) TYP.

0.200 (5.08) TYP.

www.vishay.com

For technical questions within your region, please contact one of the following:

PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com

Document Number: 88865

Revision: 18-Apr-08

Legal Disclaimer Notice

Vishay

Disclaimer

All product specifications and data are subject to change without notice.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf

(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein

or in any other disclosure relating to any product.

Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any

information provided herein to the maximum extent permitted by law. The product specifications do not expand or

otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed

therein, which apply to these products.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this

document or by any conduct of Vishay.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless

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Product names and markings noted herein may be trademarks of their respective owners.

Document Number: 91000

Revision: 18-Jul-08

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