MBR40H35CT/45 [VISHAY]
Rectifier Diode, Schottky, 20A, 35V V(RRM),;
| 型号： | MBR40H35CT/45 |
| 厂家： | 
VISHAY |
| 描述： | Rectifier Diode, Schottky, 20A, 35V V(RRM), 二极管 |
| 文件： | 总3页 (文件大小：50K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MBR40H35CT thru MBR40H60CT
New Product
Vishay Semiconductors
formerly General Semiconductor
Dual Schottky Barrier Rectifiers
Reverse Voltage 35V to 60V
Forward Current 40A
Max. Junction Temperature 175°C
Features
• Dual rectifier construction, positive center tap
• Metal silicon junction, majority carrier conduction
• Low power loss, high efficiency
• Guardring for overvoltage protection
• For use in high frequency inverters,
TO-220AB (MBR40HxxCT)
0.398 (10.10)
0.185 (4.70)
0.169 (4.30)
0.382 (8.70)
0.055 (1.40)
0.047 (1.20)
0.150 (3.80)
0.139 (3.54)
free wheeling, and polarity protection applications
0.343 (8.70) Typ.
0.055 (1.40)
0.049 (1.25)
Dia.
0.114 (2.90)
0.106 (2.70)
Mechanical Data
Case: JEDEC TO-220AB molded plastic body
0.154 (3.90)
0.138 (3.50)
0.067
(1.70) Typ.
Terminals: Plated leads, solderable per
MIL-STD-750, Method 2026
High temperature soldering guaranteed:
250°C/10 seconds, 0.25" (6.35mm) from case
Polarity: As marked
Mounting Position: Any
Mounting Torque: 10 in-lbs maximum
Weight: 0.08oz., 2.24g
Epoxy meets UL 94V-0 flammability rating
0.638 (16.20)
0.598 (15.20)
0.634 (16.10)
0.618 (15.70)
0.331 (8.40) Typ.
0.370 (9.40)
0.354 (9.00)
PIN
1
2
3
1.161 (29.48)
1.105 (28.08)
0.118
(3.00) Typ.
0.102 (2.60)
0.087 (2.20)
0.523 (13.28)
PIN 1
PIN 3
PIN 2
CASE
0.507 (12.88)
0.035 (0.90)
0.028 (0.70)
Dimensions in inches
and (millimeters)
0.064 (1.62)
0.056 (1.42)
0.200 (5.08) Typ.
0.024 (0.60)
0.018 (0.45)
0.100
(2.54) Typ.
Maximum Ratings (TC = 25°C unless otherwise noted)
MBR40H MBR40H MBR40H MBR40H
Parameter
Symbol
VRRM
VRWM
VDC
35CT
45CT
50CT
60CT
Unit
V
Maximum repetitive peak reverse voltage
Working peak reverse voltage
35
45
50
60
35
45
50
60
V
Maximum DC blocking voltage
35
45
50
60
V
Maximum average forward rectified current Total device
40
20
IF(AV)
A
A
(see fig. 1)
Per leg
Peak forward surge current
8.3ms single half sine-wave superimposed
on rated load
IFSM
350
320
Per leg
Peak repetitive reverse current per leg at tp = 2µs, 1KHZ
IRRM
1.0
20
A
Peak non-repetitive reverse surge energy
ERSM
mJ
(8/20µs waveform)
Per leg
Per leg
Non-repetitive avalanche energy
at 25°C, IAS = 3.0A, L=5mH
EAS
22.5
mJ
Voltage rate of change (rated VR)
dv/dt
10,000
V/µs
Operating junction and storage temperature range
TJ, TSTG
–65 to +175
°C
Document Number 88920
14-Jul-04
www.vishay.com
1
MBR40H35CT thru MBR40H60CT
Vishay Semiconductors
formerly General Semiconductor
Electrical Characteristics (TC = 25°C unless otherwise noted)
MBR40H MBR40H MBR40H MBR40H
Parameter
Symbol
35CT
40CT
50CT
60CT
Unit
V
Maximum repetitive peak reverse voltage
Working peak reverse voltage
Maximum DC blocking voltage
VRRM
VRWM
VDC
35
45
50
60
35
45
50
60
V
35
45
50
60
V
Maximum instantaneous
forward voltage per leg(1)
at IF = 20A, TJ = 25°C
0.64
0.55
0.76
0.70
0.68
0.60
0.83
0.73
at IF = 20A, TJ = 125°C
at IF = 40A, TJ = 25°C
at IF = 40A, TJ = 125°C
VF
V
Maximum reverse current per leg
at working peak reverse voltage (Note 1) TJ = 125°C
TJ = 25°C
100
15
µA
mA
IR
Typical junction capacitance at 4.0V, 1MHz
CJ
1200
920
pF
Thermal Characteristics (TC = 25°C unless otherwise noted)
Parameter
Symbol
Value
Unit
Typical thermal resistance per leg
R
1.8
OC/W
θJC
Notes:
(1) Pulse test: 300µs pulse width, 1% duty cycle.
Ordering Information
Package
Code
Product
Case
Package Option
Anti-Static tube, 50/tube, 1K/carton
MBR40H35CT - MBR40H60CT
TO-220AB
45
www.vishay.com
2
Document Number 88920
14-Jul-04
MBR40H35CT thru MBR40H60CT
Vishay Semiconductors
formerly General Semiconductor
Ratings and
Characteristic Curves (TA = 25°C unless otherwise noted)
Fig. 1 – Forward Current
Fig. 2 – Maximum Non-Repetitive
Derating Curve
Peak Forward Surge Current Per Leg
50
400
350
300
250
200
150
40
30
20
100
MBR40H35-45CT
MBR40H50-60CT
10
MBR40H35-45CT
MBR40H50-60CT
50
0
0
25
50
75
100
125
150
175
200
1
10
100
100
100
Case Temperature (°C)
Number of Cycles at 60 HZ
Fig. 3 – Typical Instantaneous
Forward Characteristics Per Leg
Fig. 4 – Typical Reverse Leakage
Characteristics Per Leg
100
1,000,000
100,000
10,000
TJ = 175°C
TJ = 125°C
TJ = 175°C
TJ = 125°C
10
1
1,000
100
10
MBR40H35-45CT
MBR40H50-60CT
MBR40H35-45CT
MBR40H50-60CT
TJ = 25°C
TJ = 25°C
1
0.1
0.1
0.1
0.2
0.3
0.4 0.5
0.6
0.7 0.8 0.9
0
20
30
40
50
60
70
80
90
Instantaneous Forward Voltage (V)
Percent of Rated Peak Reverse Voltage (%)
Fig. 5 – Typical Junction Capacitance
Per Leg
Fig. 6 – Typical Transient
Thermal Impedance Per Leg
10
10000
1
1000
MBR40H35-45CT
MBR40H50-60CT
MBR40H35-45CT
MBR40H50-60CT
100
0.1
0.1
0.1
1
10
0.01
1
10
100
t -- Pulse Duration (sec.)
Reverse Voltage (V)
Document Number 88920
14-Jul-04
www.vishay.com
3
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