MBR40H50PT-E3/45 [VISHAY]

DIODE 40 A, 50 V, SILICON, RECTIFIER DIODE, TO-247AD, ROHS COMPLIANT, PLASTIC, TO-3P, 3 PIN, Rectifier Diode;
MBR40H50PT-E3/45
型号: MBR40H50PT-E3/45
厂家: VISHAY    VISHAY
描述:

DIODE 40 A, 50 V, SILICON, RECTIFIER DIODE, TO-247AD, ROHS COMPLIANT, PLASTIC, TO-3P, 3 PIN, Rectifier Diode

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文件: 总4页 (文件大小:91K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
New Product  
MBR40H35PT thru MBR40H60PT  
Vishay General Semiconductor  
Dual Common-Cathode Schottky Rectifier  
High Barrier Technology for Improved High Temperature Performance  
FEATURES  
• Guardring for overvoltage protection  
• Lower power losses, high efficiency  
• Low forward voltage drop  
• High forward surge capability  
• High frequency operation  
3
2
• Solder dip 260 °C, 40 s  
1
TO-247AD (TO-3P)  
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
PIN 2  
CASE  
PIN 1  
PIN 3  
TYPICAL APPLICATIONS  
For use in low voltage, high frequency rectifier of  
switching mode power supplies, freewheeling diodes,  
dc-to-dc converters or polarity protection application.  
PRIMARY CHARACTERISTICS  
MECHANICAL DATA  
Case: TO-247AD (TO-3P)  
Epoxy meets UL 94V-0 flammability rating  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD22-B102  
IF(AV)  
40 A  
VRRM  
IFSM  
35 V to 60 V  
400 A  
VF  
0.55 V, 0.60 V  
175 °C  
TJ max.  
E3 suffix for consumer grade, meets JESD 201 class  
1A whisker test  
Polarity: As marked  
Mounting Torque: 10 in-lbs maximum  
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)  
A
PARAMETER  
SYMBOL MBR40H35PT MBR40H45PT MBR40H50PT MBR40H60PT UNIT  
Maximum repetitive peak reverse voltage  
Maximum working peak reverse voltage  
Maximum DC blocking voltage  
VRRM  
VRWM  
VDC  
35  
35  
35  
45  
45  
45  
50  
50  
50  
60  
60  
60  
V
V
V
A
Maximum average forward rectified current (Fig. 1)  
IF(AV)  
40  
80  
Non-repetitive avalanche energy per diode  
at 25 °C, IAS = 4 A, L = 10 mH  
EAS  
mJ  
A
Peak forward surge current, 8.3 ms single half  
sine-wave superimposed on rated load per diode  
IFSM  
400  
Peak repetitive reverse surge current per diode (1)  
IRRM  
2.0  
30  
1.0  
25  
A
Peak non-repetitive reverse energy (8/20 µs waveform)  
ERSM  
mJ  
Electrostatic discharge capacitor voltage human body  
model: C = 100 pF, R = 1.5 kΩ  
VC  
25  
kV  
Voltage rate of change at (rated VR)  
Operating junction temperature range  
Storage temperature range  
dV/dt  
TJ  
10 000  
V/µs  
°C  
- 65 to + 175  
- 65 to + 175  
TSTG  
°C  
Note:  
(1) 2.0 µs pulse width, f = 1.0 kHz  
Document Number: 88794  
Revision: 19-May-08  
For technical questions within your region, please contact one of the following:  
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com  
www.vishay.com  
1
New Product  
MBR40H35PT thru MBR40H60PT  
Vishay General Semiconductor  
ELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise noted)  
C
MBR40H35PT  
MBR40H45PT  
MBR40H50PT  
MBR40H60PT  
PARAMETER  
TEST CONDITIONS  
SYMBOL  
UNIT  
TYP.  
MAX.  
TYP.  
MAX.  
IF = 20 A  
IF = 20 A  
IF = 40 A  
IF = 40 A  
TJ = 25 °C  
TJ = 125 °C  
TJ = 25 °C  
TJ =125 °C  
-
0.63  
0.55  
0.73  
0.66  
-
0.69  
0.60  
0.83  
0.72  
Maximum instantaneous forward voltage  
per diode (1)  
0.49  
-
0.62  
0.56  
-
0.68  
VF  
V
Maximum reverse current at rated VR  
per diode (2)  
TJ = 25 °C  
TJ = 125 °C  
-
150  
25  
-
150  
25  
µA  
mA  
IR  
9.0  
6.0  
Notes:  
(1) Pulse test: 300 µs pulse width, 1 % duty cycle  
(2) Pulse test: Pulse width 40 ms  
THERMAL CHARACTERISTICS (T = 25 °C unless otherwise noted)  
A
PARAMETER  
SYMBOL  
MBR40H35PT  
MBR40H45PT  
MBR40H50PT  
MBR40H60PT UNIT  
Thermal resistance, junction to case  
per diode  
RθJC  
1.2  
°C/W  
ORDERING INFORMATION (Example)  
PACKAGE  
PREFERRED P/N  
UNIT WEIGHT (g)  
PACKAGE CODE  
BASE QUANTITY  
DELIVERY MODE  
TO-247AD  
MBR40H45PT-E3/45  
6.13  
45  
30/tube  
Tube  
RATINGS AND CHARACTERISTICS CURVES  
(T = 25 °C unless otherwise noted)  
A
45  
40  
35  
30  
25  
20  
15  
10  
5
400  
300  
200  
TJ = TJ Max.  
8.3 ms Single Half Sine-Wave  
(JEDEC Method)  
0
100  
1
10  
Number of Cycles at 60 Hz  
100  
0
25  
50  
75  
100  
125  
150  
175  
Case Temperature (°C)  
Figure 1. Forward Current Derating Curve  
Figure 2. Maximum Non-Repetitive Peak Forward Surge  
Current Per Diode  
www.vishay.com  
2
For technical questions within your region, please contact one of the following:  
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com  
Document Number: 88794  
Revision: 19-May-08  
New Product  
MBR40H35PT thru MBR40H60PT  
Vishay General Semiconductor  
100  
10  
10 000  
1000  
100  
TJ = 25 °C  
f = 1.0 MHz  
Vsig = 50 mVp-p  
TJ = 150 °C  
TJ = 25 °C  
1
TJ = 125 °C  
0.1  
MBR40H35PT - MBR40H45PT  
MBR40H50PT - MBR40H60PT  
0.01  
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9  
Instantaneous Forward Voltage (V)  
0.1  
1
10  
100  
Reverse Voltage (V)  
Figure 3. Typical Instantaneous Forward Characteristics Per Diode  
Figure 5. Typical Junction Capacitance Per Diode  
100  
10  
TJ = 150 °C  
10  
1
0.1  
TJ = 125 °C  
1
MBR40H35PT - MBR40H45PT  
MBR40H50PT - MBR40H60PT  
0.01  
0.001  
0.0001  
TJ = 25 °C  
0.1  
0
20  
40  
60  
80  
100  
0.01  
0.1  
1
10  
Percent of Rated Peak Reverse Voltage (%)  
t - Pulse Duration (s)  
Figure 4. Typical Reverse Characteristics Per Diode  
Figure 6. Typical Transient Thermal Impedance Per Diode  
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)  
TO-247AD (TO-3P)  
0.245 (6.2)  
0.225 (5.7)  
0.645 (16.4)  
0.625 (15.9)  
0.203 (5.16)  
0.193 (4.90)  
0.078 (1.98) REF.  
0.323 (8.2)  
0.313 (7.9)  
30°  
10  
0.170  
(4.3)  
10° TYP.  
0.840 (21.3)  
0.820 (20.8)  
Both Sides  
0.142 (3.6)  
0.138 (3.5)  
1
2
3
1° REF.  
Both Sides  
0.086 (2.18)  
0.076 (1.93)  
0.118 (3.0)  
0.108 (2.7)  
0.127 (3.22)  
0.117 (2.97)  
0.160 (4.1)  
0.140 (3.5)  
0.795 (20.2)  
0.775 (19.6)  
0.030 (0.76)  
0.020 (0.51)  
0.225 (5.7)  
0.205 (5.2)  
0.048 (1.22)  
0.044 (1.12)  
PIN 2  
CASE  
PIN 1  
PIN 3  
Document Number: 88794  
Revision: 19-May-08  
For technical questions within your region, please contact one of the following:  
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com  
www.vishay.com  
3
Legal Disclaimer Notice  
www.vishay.com  
Vishay  
Disclaimer  
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE  
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.  
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,  
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other  
disclosure relating to any product.  
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or  
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all  
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,  
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular  
purpose, non-infringement and merchantability.  
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical  
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements  
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular  
product with the properties described in the product specification is suitable for use in a particular application. Parameters  
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All  
operating parameters, including typical parameters, must be validated for each customer application by the customer’s  
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,  
including but not limited to the warranty expressed therein.  
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining  
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.  
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree  
to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and  
damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay  
or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to  
obtain written terms and conditions regarding products designed for such applications.  
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by  
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.  
Material Category Policy  
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the  
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council  
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment  
(EEE) - recast, unless otherwise specified as non-compliant.  
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that  
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.  
Revision: 12-Mar-12  
Document Number: 91000  
1

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