MBRB1035/45-E3 [VISHAY]
DIODE 10 A, 35 V, SILICON, RECTIFIER DIODE, TO-263AB, PLASTIC PACKAGE-3, Rectifier Diode;
| 型号： | MBRB1035/45-E3 |
| 厂家： | 
VISHAY |
| 描述： | DIODE 10 A, 35 V, SILICON, RECTIFIER DIODE, TO-263AB, PLASTIC PACKAGE-3, Rectifier Diode |
| 文件： | 总4页 (文件大小：71K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MBR10xx, MBRF10xx & MBRB10xx Series
Vishay Semiconductors
formerly General Semiconductor
Schottky Barrier Rectifier
Reverse Voltage 35 to 60V
Forward Current 10A
ITO-220AC (MBRF10xx)
0.188 (4.77)
0.172 (4.36)
0.405 (10.27)
0.383 (9.72)
0.110 (2.80)
0.100 (2.54)
TO-220AC (MBR10xx)
0.131 (3.39)
0.122 (3.08)
0.140 (3.56)
0.130 (3.30)
DIA.
DIA.
0.415 (10.54) MAX.
0.185 (4.70)
0.175 (4.44)
0.154 (3.91)
0.148 (3.74)
DIA.
0.370 (9.40)
0.360 (9.14)
0.055 (1.39)
0.045 (1.14)
0.676 (17.2)
0.646 (16.4)
0.600 (15.5)
0.580 (14.5)
0.350 (8.89)
0.330 (8.38)
0.113 (2.87)
0.103 (2.62)
PIN
0.145 (3.68)
0.135 (3.43)
1
2
0.603 (15.32)
0.573 (14.55)
0.191 (4.85)
0.171 (4.35)
0.410 (10.41)
0.390 (9.91)
0.350 (8.89)
0.330 (8.38)
0.635 (16.13)
0.625 (15.87)
0.110 (2.80)
0.100 (2.54)
0.560 (14.22)
0.530 (13.46)
0.060 (1.52)
PIN 1
PIN
1
2
1.148 (29.16)
1.118 (28.40)
0.160 (4.06)
0.140 (3.56)
0.110 (2.79)
0.100 (2.54)
PIN 2
0.037 (0.94)
0.027 (0.69)
0.560 (14.22)
0.022 (0.55)
0.014 (0.36)
PIN 1
PIN 2
0.205 (5.20)
0.195 (4.95)
0.530 (13.46)
CASE
0.105 (2.67)
TO-263AB (MBRB10xx)
0.037 (0.94)
0.027 (0.68)
0.095 (2.41)
0.022 (0.56)
0.014 (0.36)
0.190 (4.83)
0.160 (4.06)
0.411 (10.45)
0.380 (9.65)
0.205 (5.20)
0.195 (4.95)
0.055 (1.40)
0.045 (1.14)
0.245 (6.22)
MIN
Mounting Pad Layout TO-263AB
K
0.42
(10.66)
0.055 (1.40)
0.047 (1.19)
0.360 (9.14)
0.320 (8.13)
0.624 (15.85)
0.591 (15.00)
Dimensions in inches
and (millimeters)
0.33
(8.38)
K
1
2
0-0.01 (0-0.254)
0.63
(17.02)
0.110 (2.79)
0.090 (2.29)
0.027 (0.686)
0.037 (0.940)
0.021 (0.53)
0.014 (0.36)
PIN 1
PIN 2
K - HEATSINK
0.105 (2.67)
0.095 (2.41)
0.140 (3.56)
0.110 (2.79)
0.08
0.205 (5.20)
0.195 (4.95)
(2.032)
0.12
(3.05)
0.24
(6.096)
Features
Mechanical Data
• Plastic package has Underwriters Laboratory
Flammability Classifications 94V-0
Case: JEDEC TO-220AC, ITO-220AC & TO-263AB molded
plastic body
• Metal silicon junction, majority carrier conduction
• Low power loss, high efficiency
• Guardring for overvoltage protection
Terminals: Plated leads, solderable per MIL-STD-750,
Method 2026
Polarity: As marked
Mounting Position: Any
Mounting Torque: 10 in-lbs maximum
Weight: 0.08 ounce, 2.24 grams
• For use in low voltage, high frequency inverters, free
wheeling, and polarity protection applications
• High temperature soldering guaranteed:
250°C/10 seconds, 0.25" (6.35mm) from case
Document Number 88669
1-Jul-02
www.vishay.com
1
MBR10xx, MBRF10xx & MBRB10xx Series
Vishay Semiconductors
formerly General Semiconductor
Maximum Ratings (TC = 25°C unless otherwise noted)
Parameter
Symbol
VRRM
VRWM
VDC
MBR1035
MBR1045
MBR1050
MBR1060 Unit
Maximum repetitive peak reverse voltage
Working peak reverse voltage
Maximum DC blocking voltage
35
35
35
45
45
45
50
50
50
60
60
60
V
V
V
A
Maximum average forward rectified current (See Fig. 1)
Peak repetitive forward current at TC = 135°C
(sq. wave, 20 KHz)
IF(AV)
10
20
IFRM
IFSM
IRRM
A
A
A
Peak forward surge current
8.3ms single half sine-wave superimposed
on rated load (JEDEC Method) per leg
150
Peak repetitive reverse current per leg
at tp = 2.0µs, 1KHZ
1.0
0.5
Voltage rate of change (rated VR)
Operating junction temperature range
Storage temperature range
dv/dt
TJ
10,000
V/µs
°C
–65 to +150
TSTG
–65 to +175
°C
4500(1)
3500(2)
1500(3)
RMS Isolation voltage (MBRF type only) from terminals
to heatsink with t = 1.0 second, RH ≤ 30%
VISOL
V
Electrical Characteristics(TC = 25°C unless otherwise noted)
Parameter
Symbol
MBR1035
MBR1045
MBR1050
MBR1060 Unit
Maximum instantaneous forward voltage per leg (4)
at IF = 10A,
at IF = 10A,
at IF = 20A,
at IF = 20A,
TC = 25°C
TC = 125°C
TC = 25°C
TC = 125°C
–
0.80
0.70
0.95
0.85
VF
0.57
0.84
0.72
V
Maximum instantaneous reverse current TC = 25°C
at rated DC blocking voltage (4)
TC = 125°C
0.10
15
mA
IR
Thermal Characteristics(TC = 25°C unless otherwise noted)
Parameter
Symbol
MBR
2.0
MBRF
MBRB
2.0
Unit
Maximum thermal resistance, junction to case
RΘJC
4.0
°C/W
Notes:
(1) Clip mounting (on case), where lead does not overlap heatsink with 0.110” offset
(2) Clip mounting (on case), where leads do overlap heatsink
(3) Screw mounting with 4-40 screw, where washer diameter is ≤ 4.9 mm (0.19”)
(4) Pulse test: 300µs pulse width, 1% duty cycle
Ordering Information
Product
Case
Package Code
Package Option
MBR1035 - MBR1060
MBRF1035 - MBRF1060
TO-220AC
ITO-220AC
45
45
Anti-Static tube, 50/tube, 2K/carton
Anti-Static tube, 50/tube, 2K/carton
31
45
81
13” reel, 800/reel, 4.8K/carton
Anti-Static tube, 50/tube, 2K/carton
Anti-Static 13” reel, 800/reel, 4.8K/carton
MBRB1035 - MBRB1060
TO-263AB
www.vishay.com
2
Document Number 88669
1-Jul-02
MBR10xx, MBRF10xx & MBRB10xx Series
Vishay Semiconductors
formerly General Semiconductor
Ratings and
Characteristic Curves(TA = 25°C unless otherwise noted)
Fig. 1 - Forward Current
Fig. 2 - Maximum Non-Repetitive Peak
Forward Surge Current
Derating Curve
175
150
125
100
12
T = T max.
8.3ms single half sine-wave
(JEDEC method)
J
J
Resistive or Inductive Load
10
8
6
4
75
2
0
MBR1635 - MBR1645
MBR1650 - MBR1660
50
25
0
50
100
150
0.1
1
10
100
Case Temperature (°C)
Number of Cycles at 60 Hz
Fig. 3 - Typical Instantaneous
Forward Characteristics
Fig. 4 - Typical Reverse Characteristics
50
10
20
10
T
= 125°C
J
T = 150°C
J
Pulse Width = 300µs
1% Duty Cycle
1
T
= 75°C
J
1
0.1
0.01
T = 25°C
J
MBR1635 - MBR1645
MBR1650 - MBR1660
T
= 25°C
J
0.1
MBR1635 - MBR1645
MBR1650 - MBR1660
0.01
0.001
0
20
40
60
80
100
0
0.2
0.4
0.6
0.8
1.0
1.2
Instantaneous Forward Voltage (V)
Percent of Rated Peak Reverse Voltage (%)
Fig. 6 - Typical Transient Thermal
Impedance
Fig. 5 - Typical Junction Capacitance
4,000
1,000
100
T = 25°C
J
f = 1.0 MHz
Vsig = 50mVp-p
10.0
1
MBR1635 - MBR1645
MBR1650 - MBR1660
100
0.1
0.1
1
10
100
0.01
0.1
1
10
100
Reverse Voltage (V)
t, Pulse Duration (sec.)
Document Number 88669
1-Jul-02
www.vishay.com
3
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
www.vishay.com
1
相关型号：
MBRB1035/81-E3
DIODE 10 A, 35 V, SILICON, RECTIFIER DIODE, TO-263AB, PLASTIC PACKAGE-3, Rectifier Diode
VISHAY
MBRB1035CT-BP
Rectifier Diode, Schottky, 1 Phase, 2 Element, 5A, 35V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, D2PAK-3
MCC
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