MBRF20H200CT-E3/45 [VISHAY]
Dual Common-Cathode High-Voltage Schottky Rectifier; 双共阴极高压肖特基整流器
| 型号： | MBRF20H200CT-E3/45 |
| 厂家： | 
VISHAY |
| 描述： | Dual Common-Cathode High-Voltage Schottky Rectifier |
| 文件： | 总5页 (文件大小：128K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MBR20H200CT, MBRF20H200CT & SB20H200CT-1
Vishay General Semiconductor
Dual Common-Cathode High-Voltage Schottky Rectifier
Low Leakage Current 5.0 µA
FEATURES
TO-220AB
ITO-220AB
• Guarding for overvoltage protection
• Low power loss, high efficiency
• Low forward voltage drop
• High frequency operation
3
3
• Solder dip 260 °C, 40 s
2
2
1
1
MBR20H200CT
MBRF20H200CT
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TO-262AA
TYPICAL APPLICATIONS
For use in high frequency inverters, freewheeling and
polarity protection applications.
3
2
1
SB20H200CT-1
MECHANICAL DATA
PIN 1
PIN 2
CASE
Case: TO-220AB, ITO-220AB, TO-262AA
PIN 3
Epoxy meets UL 94V-0 flammability rating
PRIMARY CHARACTERISTICS
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test
IF(AV)
VRRM
IFSM
VF
2 x 10 A
200 V
290 A
0.75 V
175 °C
Mounting Torque: 10 in-lbs maximum
Polarity: As marked
TJ
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)
C
PARAMETER
SYMBOL
VRRM
MBR20H200CT
UNIT
Maximum repetitive peak reverse voltage
Working peak reverse voltage
Maximum DC blocking voltage
200
200
200
V
V
V
VRWM
VDC
total device
Maximum average forward rectified current
per diode
20
10
IF(AV)
A
A
Peak forward surge current 8.3 ms single half sine-wave superimposed
on rated load per diode
IFSM
290
Peak repetitive reverse current per diode at tp = 2 µs, 1 kHz
IRRM
ERSM
EAS
1.0
20
20
A
Peak non-repetitive reverse surge energy per diode (8/20 µs waveform)
Non-repetitive avalanche energy per diode at 25 °C, IAS = 2.0 A, L = 10 mH
mJ
mJ
Electrostatic discharge capacitor voltage
human body model air discharge: C = 100 pF, R 0 1.5 kΩ
VC
25
kV
Voltage rate of change (rated VR)
dV/dt
TJ, TSTG
VAC
10 000
- 65 to + 175
1500
V/µs
°C
Operating junction and storage temperature range
Isolation voltage (ITO-220AB only) from terminals to heatsink t = 1 minute
V
Document Number: 88786
Revision: 18-Apr-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
MBR20H200CT, MBRF20H200CT & SB20H200CT-1
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise noted)
C
TEST
PARAMETER
SYMBOL
TYP.
MAX.
UNIT
IF = 10 A
IF = 10 A
IF = 20 A
IF = 20 A
TC = 25 °C
0.81
0.65
0.87
0.74
0.88
0.75
0.97
0.85
Maximum instantaneous
TC = 125 °C
TC = 25 °C
TC = 125 °C
VF
V
forward voltage per diode (1)
Maximum reverse current per
diode at working peak reverse
voltage (1)
TJ = 25 °C
TJ = 125 °C
5.0
1.0
µA
mA
IR
Typical junction capacitance
4.0 V, 1 MHz
CJ
250
pF
Note:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
THERMAL CHARACTERISTICS (T = 25 °C unless otherwise noted)
C
PARAMETER
SYMBOL
MBR
MBRF
SB
2.0
UNIT
Typical thermal resistance per diode
RθJC
2.0
4.0
°C/W
ORDERING INFORMATION (Example)
PACKAGE
TO-220AB
ITO-220AB
TO-262AA
PREFERRED P/N
MBR20H200CT-E3/45
MBRF20H200CT-E3/45
SB20H200CT-1E3/45
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
50/tube
DELIVERY MODE
2.06
2.20
1.58
45
45
45
Tube
Tube
Tube
50/tube
50/tube
RATINGS AND CHARACTERISTICS CURVES
(T = 25 °C unless otherwise noted)
A
25
350
325
300
275
250
225
200
175
150
125
100
75
MBR, MBRB
20
15
10
5
MBRF
50
25
0
0
1
25
50
75
100
125
150
175
10
100
Case Temperature (°C)
Number of Cycles at 60 Hz
Figure 1. Forward Derating Curve (Total)
Figure 2. Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
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For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88786
Revision: 18-Apr-08
MBR20H200CT, MBRF20H200CT & SB20H200CT-1
Vishay General Semiconductor
100
10
10 000
1000
TJ = 175 °C
TJ = 125 °C
TJ = 75 °C
1
100
TJ = 25 °C
0.1
10
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
0.1
1
10
100
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
Figure 5. Typical Junction Capacitance Per Diode
10 000
100
TJ = 175 °C
1000
TJ = 125 °C
100
10
10
TJ = 75 °C
MBRF
1
1
MBR, MBRB
TJ = 25 °C
0.1
0.01
0.1
0.01
0.1
1
10
100
10
20
30
40
50
60
70
80
90 100
t - Pulse Duration (s)
Percent of Rated Peak Reverse Voltage (%)
Figure 4. Typical Reverse Characteristics Per Diode
Figure 6. Typical Transient Thermal Impedance Per Diode
Document Number: 88786
Revision: 18-Apr-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
MBR20H200CT, MBRF20H200CT & SB20H200CT-1
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-220AB
ITO-220AB
0.193 (4.90)
0.177 (4.50)
0.108 (2.74)
0.092 (2.34)
0.398 (10.10)
0.382 (9.70)
0.185 (4.70)
0.169 (4.30)
0.408 (10.36)
0.392 (9.96)
1.29 (3.28)
1.21 (3.08)
0.150 (3.80)
0.139 (3.54)
DIA.
0.114 (2.90)
0.106 (2.70)
0.055 (1.40)
0.047 (1.20)
DIA.
0.343 (8.70)
TYP.
0.055 (1.40)
0.049 (1.25)
0.138 (3.50)
0.122 (3.10)
0.270 (6.88)
0.255 (6.48)
0.154 (3.90)
0.138 (3.50)
0.067 (1.70)
TYP.
0.638 (16.20)
0.598 (15.20)
0.331 (8.40)
TYP.
0.633 (16.07)
0.601 (15.67)
0.634 (16.10)
0.618 (15.70)
0.370 (9.40)
0.354 (9.00)
0.630 (16.00)
0.614 (15.60)
0.320 (8.12)
0.304 (7.72)
PIN
2
1.161 (29.48)
1.106 (28.08)
0.264 (6.70)
0.248 (6.50)
1
3
PIN
2
0.118 (3.00)
1
3
0.102 (2.60)
TYP.
0.087 (2.20)
0.523 (13.28)
0.507 (12.88)
0.117 (2.96)
0.101 (2.56)
0.035 (0.90)
0.028 (0.70)
0.396 (10.05)
0.372 (9.45)
0.064 (1.62)
0.056 (1.42)
0.100 (2.54)
TYP.
0.024 (0.60)
0.018 (0.45)
0.039 (1.00)
0.024 (0.60)
0.200 (5.08) TYP.
0.058 (1.47) MAX.
0.200 (5.08) TYP.
0.024 (0.60)
0.018 (0.45)
0.100
(2.54) TYP.
TO-262AA
0.185 (4.70)
0.169 (4.30)
0.398 (10.10)
0.382 (9.70)
0.055 (1.40)
0.039 (1.00)
0.055 (1.40)
0.049 (1.25)
K
0.425 (10.80)
0.393 (10.00)
0.370 (9.40)
0.354 (9.00)
PIN
2
0.488 (12.4)
0.472 (12.00)
1
3
0.102 (2.60)
0.087 (2.20)
0.523 (13.28)
0.507 (12.88)
0.405 (10.28)
0.389 (9.88)
0.035 (0.90)
0.028 (0.70)
0.062 (1.57)
0.054 (1.37)
0.024 (0.60)
0.018 (0.45)
0.100
(2.54) TYP.
0.200 (5.08) TYP.
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For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88786
Revision: 18-Apr-08
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
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