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MCT6H_04 [VISHAY]

Optocoupler, Phototransistor Output, Dual Channel; 光电耦合器，光电晶体管输出，双通道
MCT6H_04
型号： MCT6H_04
厂家： VISHAY    VISHAY
描述：

Optocoupler, Phototransistor Output, Dual Channel
光电耦合器，光电晶体管输出，双通道

晶体 光电 晶体管 光电晶体管
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MCT6H / MCT62H  
Vishay Semiconductors  
Optocoupler, Phototransistor Output, Dual Channel  
Features  
8
1
5
4
7
2
6
3
• Current Transfer Ratio (CTR) of typical 100 %  
• Isolation test voltage V  
C
= 5000 V  
RMS  
ISO  
• Low temperature coefficient of CTR  
Pb  
17202_1  
e3  
Pb-free  
• Low coupling capacitance of typical 0.3 pF  
• Wide ambient temperature range  
• Lead-free component  
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
Description  
The MCT6H and MCT62H consist of a phototransis-  
tor optically coupled to a gallium arsenide infrared-  
emitting diode in a 6-lead plastic dual inline package.  
The elements are mounted on one leadframe, provid-  
ing a fixed distance between input and output for high-  
est safety requirements.  
Agency Approvals  
• UL1577, File No. E76222 System Code U, Double  
Protection  
Order Information  
Applications  
Part  
Remarks  
CTR > 50 %, DIP-8  
CTR > 100 %, DIP-8  
Galvanically separated circuits  
Non-interacting switches  
MCT6H  
MCT62H  
For additional information on the available options refer to  
Option Information.  
Absolute Maximum Ratings  
Tamb = 25 °C, unless otherwise specified  
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is  
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute  
Maximum Rating for extended periods of the time can adversely affect reliability.  
Input  
Parameter  
Test condition  
Symbol  
VR  
Value  
6
Unit  
V
Reverse voltage  
Forward current  
IF  
60  
1.5  
mA  
A
Forward surge current  
Power dissipation  
Junction temperature  
tp ≤ 10 µs  
IFSM  
Pdiss  
Tj  
100  
125  
mW  
°C  
Output  
Parameter  
Test condition  
Symbol  
VCEO  
Value  
70  
Unit  
V
Collector emitter voltage  
Emitter collector voltage  
Collector current  
VECO  
IC  
7
V
50  
mA  
mA  
mW  
°C  
Collector peak current  
Power dissipation  
tp/T = 0.5, tp ≤ 10 ms  
ICM  
Pdiss  
Tj  
100  
150  
125  
Junction temperature  
Document Number 83525  
Rev. 1.4, 26-Oct-04  
www.vishay.com  
1
MCT6H / MCT62H  
Vishay Semiconductors  
Coupler  
Parameter  
Test condition  
Symbol  
Value  
5000  
Unit  
1)  
AC isolation test voltage (RMS) t = 1 min  
VRMS  
VISO  
Total power dissipation  
Ptot  
Tamb  
Tstg  
Tsld  
250  
mW  
°C  
Ambient temperature range  
Storage temperature range  
- 40 to + 100  
- 55 to + 125  
260  
°C  
Soldering temperature  
2 mm from case, t ≤ 10 s  
°C  
1) Related to standard climate 23/50 DIN 50014  
Electrical Characteristics  
Tamb = 25 °C, unless otherwise specified  
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering  
evaluation. Typical values are for information only and are not part of the testing requirements.  
Input  
Parameter  
Test condition  
IF = 50 mA  
Symbol  
VF  
Min  
Typ.  
1.25  
Max  
1.6  
Unit  
V
Forward voltage  
Output  
Parameter  
Test condition  
IC = 1 mA  
Symbol  
VCEO  
Min  
70  
Typ.  
Max  
100  
Unit  
V
Collector emitter voltage  
Emitter collector voltage  
Collector dark current  
I
E = 100 µA  
VECO  
ICEO  
7
V
V
CE = 20 V, IF = 0, E = 0  
nA  
Coupler  
Parameter  
Test condition  
Symbol  
Min  
Typ.  
Max  
0.3  
Unit  
1)  
DC isolation test voltage  
t = 2 s  
5000  
VRMS  
VISO  
1)  
RIO  
1012  
Isolation resistance  
VIO = 1000 V, 40 % relative  
humidity  
Ω
Collector emitter saturation  
voltage  
IF = 10 mA, IC = 1 mA  
VCEsat  
fC  
V
Cut-off frequency  
IF = 10 mA, VCE = 5 V,  
100  
0.3  
kHz  
RL = 100 Ω  
Coupling capacitance  
f = 1 MHz  
Ck  
pF  
1)  
Related to standard climate 23/50 DIN 50014  
Current Transfer Ratio  
Parameter  
Test condition  
Part  
Symbol  
Min  
50  
Typ.  
100  
Max  
Unit  
%
IC/IF  
VCE = 5 V, IF = 5 mA  
MCT6H  
CTR  
CTR  
CTR  
V
V
CE = 5 V, IF = 10 mA  
CE = 5 V, IF = 5 mA  
MCT6H  
60  
120  
200  
%
%
MCT62H  
100  
www.vishay.com  
2
Document Number 83525  
Rev. 1.4, 26-Oct-04  
MCT6H / MCT62H  
Vishay Semiconductors  
Switching Characteristics  
Parameter  
Test condition  
Symbol  
td  
Min  
Typ.  
3.0  
Max  
Unit  
Delay time  
Rise time  
VS = 5 V, IC = 2 mA, RL = 100 Ω  
µs  
(see figure 1)  
V
S = 5 V, IC = 2 mA, RL = 100 Ω  
tr  
tf  
3.0  
4.7  
0.3  
6.0  
5.0  
µs  
µs  
µs  
µs  
µs  
(see figure 1)  
Fall time  
VS = 5 V, IC = 2 mA, RL = 100 Ω  
(see figure 1)  
Storage time  
Turn-on time  
Turn-off time  
V
S = 5 V, IC = 2 mA, RL = 100 Ω  
(see figure 1)  
S = 5 V, IC = 2 mA, RL = 100 Ω  
ts  
V
ton  
toff  
(see figure 1)  
VS = 5 V, IC = 2 mA, RL = 100 Ω  
(see figure 1)  
96 11698  
I
F
0
+ 5 V  
I
F
I
F
t
p
t
0
I
C
adjusted through  
input amplitude  
I
C
= 2 mA;  
100%  
90%  
R
= 50 W  
= 0.01  
G
t
p
T
t
= 50 Ps  
p
10%  
0
Channel I  
Channel II  
Oscilloscope  
t
r
R
C
= 1 MW  
= 20 pF  
L
L
t
t
t
d
t
t
f
s
t
off  
50 W  
100 W  
on  
t
t
t
t
pulse duration  
delay time  
rise time  
t
t
t
storage time  
fall time  
turn-off time  
p
s
d
r
f
95 10804  
(= t + t )  
off  
s
f
(= t + t )  
turn-on time  
on  
d
r
Figure 1. Test circuit, non-saturated operation  
Figure 2. Switching Times  
Typical Characteristics (Tamb = 25 °C unless otherwise specified)  
300  
250  
200  
150  
100  
50  
1000  
100  
10  
Coupled device  
Phototransistor  
IR-diode  
1
0
0.1  
0
40  
80  
120  
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0  
- Forward Voltage ( V )  
96 11700  
T
amb  
– Ambient Temperature(°C )  
96 11862  
V
F
Figure 3. Total Power Dissipation vs. Ambient Temperature  
Figure 4. Forward Current vs. Forward Voltage  
Document Number 83525  
Rev. 1.4, 26-Oct-04  
www.vishay.com  
3
MCT6H / MCT62H  
Vishay Semiconductors  
100.0  
10.0  
1.0  
1.5  
20mA  
I =50mA  
F
V
=5V  
CE  
1.4  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
I =5mA  
F
10mA  
5mA  
2mA  
1mA  
0.1  
–30–20 –10  
0
10 20 30 40 50 60 70 80  
0.1  
1.0  
10.0  
100.0  
96 11927  
T
amb  
– Ambient Temperature(°C )  
96 11930  
V
CE  
– Collector Emitter Voltage ( V )  
Figure 5. Relative Current Transfer Ratio vs. Ambient  
Temperature  
Figure 8. Collector Current vs. Collector Emitter Voltage  
10000  
1000  
100  
10  
1.0  
0.9  
V
I =0  
F
=20V  
CE  
CTR=50%  
0.8  
0.7  
0.6  
20%  
0.5  
0.4  
0.3  
0.2  
10%  
0.1  
1
0.0  
0
10 20 30 40 50 60 70 80 90 100  
1
10  
100  
96 11928  
T
amb  
– Ambient Temperature (°C )  
96 11993  
I
– Collector Current ( mA )  
C
Figure 6. Collector Dark Current vs. Ambient Temperature  
Figure 9. Collector Emitter Saturation Voltage vs. Collector Current  
100.00  
1000  
V
=5V  
CE  
V
=5V  
CE  
10.00  
1.00  
0.10  
0.01  
100  
10  
1
0.1  
1.0  
10.0  
100.0  
0.1  
1.0  
I – Forward Current ( mA )  
F
10.0  
100.0  
96 11929  
I
– Forward Current ( mA )  
96 11994  
F
Figure 7. Collector Current vs. Forward Current  
Figure 10. Current Transfer Ratio vs. Forward Current  
www.vishay.com  
4
Document Number 83525  
Rev. 1.4, 26-Oct-04  
MCT6H / MCT62H  
Vishay Semiconductors  
Figure 11. Turn on / off Time vs. Collector Current  
10  
8
Non saturated operation  
V =5V  
S
Ω
R =100  
L
6
t
on  
4
t
off  
2
0
0
1
2
3
4
5
6
7
8
9
10  
96 11995  
I – Collector Current ( mA )  
C
Package Dimensions in mm  
14784  
Document Number 83525  
Rev. 1.4, 26-Oct-04  
www.vishay.com  
5
MCT6H / MCT62H  
Vishay Semiconductors  
Ozone Depleting Substances Policy Statement  
It is the policy of Vishay Semiconductor GmbH to  
1. Meet all present and future national and international statutory requirements.  
2. Regularly and continuously improve the performance of our products, processes, distribution and  
operatingsystems with respect to their impact on the health and safety of our employees and the public, as  
well as their impact on the environment.  
It is particular concern to control or eliminate releases of those substances into the atmosphere which are  
known as ozone depleting substances (ODSs).  
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs  
and forbid their use within the next ten years. Various national and international initiatives are pressing for an  
earlier ban on these substances.  
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use  
of ODSs listed in the following documents.  
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments  
respectively  
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental  
Protection Agency (EPA) in the USA  
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.  
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting  
substances and do not contain such substances.  
We reserve the right to make changes to improve technical design  
and may do so without further notice.  
Parameters can vary in different applications. All operating parameters must be validated for each  
customer application by the customer. Should the buyer use Vishay Semiconductors products for any  
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all  
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal  
damage, injury or death associated with such unintended or unauthorized use.  
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany  
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423  
www.vishay.com  
6
Document Number 83525  
Rev. 1.4, 26-Oct-04  
Legal Disclaimer Notice  
Vishay  
Notice  
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,  
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.  
Information contained herein is intended to provide a product description only. No license, express or implied, by  
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's  
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express  
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness  
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.  
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.  
Customers using or selling these products for use in such applications do so at their own risk and agree to fully  
indemnify Vishay for any damages resulting from such improper use or sale.  
Document Number: 91000  
Revision: 08-Apr-05  
www.vishay.com  
1

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