MMBZ15VDA [VISHAY]
Small Signal Zener Diodes, Dual; 小信号齐纳二极管，双
| 型号： | MMBZ15VDA |
| 厂家： | 
VISHAY |
| 描述： | Small Signal Zener Diodes, Dual |
| 文件： | 总4页 (文件大小：74K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MMBZ...VDA and C Series
VISHAY
Vishay Semiconductors
Small Signal Zener Diodes, Dual
Features
• Dual Silicon Planar Zener Diodes with Common
Cathode or Common Anode configurations.
MMBZ15VDC
MMBZ27VDC
MMBZ15VDA
MMBZ27VDA
• Dual package provides for Bidirectional or sepa-
rate unidirectional configurations.
3
3
• The dual configurations protect two separate lines
with only one device.
• Peak Power: 40 W @1 ms (Bidirectional) .
• Ideal for ESD Protection.
1
2
1
2
Common Cathode
Common Anode
• For bidirectional operation, circuit connected to
pins 1 and 2. For unidirectional operation, circuit
connected to pins 1 and 3 or pins 2 and 3.
18654
Marking:
Mechanical Data
MMBZ15VDC = TC5
MMBZ27VDC = TC7
MMBZ15VDA = TA5
MMBZ27VDA = TA7
Case: SOT-23 Plastic case
Weight: approx. 8.8 mg
Terminals: Solderable per MIL-STD-750, method
2026
Packaging Codes/Options:
GS18/ 10 k per 13 " reel (8 mm tape), 10 k/box
GS08/ 3 k per 7 " reel (8 mm tape), 15 k/box
Absolute Maximum Ratings
T
= 25 °C, unless otherwise specified
amb
Parameter
Test condition
Symbol
Value
Unit
W
1)
4)
P
PK
Peak power dissipation
Power dissipation
40
T
= 25 °C
P
225
1.8
mW
mW/°C
amb
tot
2)
Derate above 25 °C
= 25 °C
on FR-5 Board
Power dissipation
T
P
300
2.4
mW
mW/°C
amb
tot
3)
Derate above 25 °C
on Alumina Substrate
1)
Nonrepetitive current pulse per Figure 2 and derate above T
FR-5 = 1.0 x 0.75 x 0.62 in.
= 25 °C per Figure 3.
amb
2)
3)
4)
Alumina = 0.4 x 0.3 x 0.024 in., 99.5 % alumina.
The MMBZ6V8DC/A is rated at 24 V.
Thermal Characteristics
T
= 25 °C, unless otherwise specified
amb
Parameter
Test condition
Symbol
Value
556
Unit
Thermal resistance junction to ambiant air
Operating and storage temperature range
R
°C/W
thJA
T , T
- 55 to + 150
°C
j
stg
Document Number 85808
Rev. 1.4, 08-Jul-04
www.vishay.com
1
MMBZ...VDA and C Series
Vishay Semiconductors
VISHAY
Electrical Characteristics
Partnumber
Breakdown
Test
Current
Working
Peak
Reverse
Voltage
Max.
Max.
Reverse
Surge
Max. Reverse
Voltage
Max.
Temperature
Coefficient
Max. Forward
Voltage
1)
Reverse
Leakage
Current
Voltage
(Clamping
Voltage)
2)
Current
V
at I
I
V
I
I
at V
V
@ I
F
BR
T
T
RWM
R
PP
V
@ I
BR
F
C
RSM
V
mA
V
nA
A
V
mV/°C
V
mA
min
max
MMBZ15VDA 14.70 15.30
MMBZ27VDA 26.46 27.54
MMBZ15VDC 14.30 15.80
MMBZ27VDC 25.65 28.35
1.0
1.0
1.0
1.0
12.8
22.0
12.8
22.0
100
80
1.9
1.0
1.9
1.0
21.2
38.0
21.2
38.0
16
30
16
30
0.9
1.1
0.9
1.1
200
200
200
200
100
80
Note:
1)
V
measured at pulse test current I at an ambient temperature of 25 °C
T
BR
2)
Surge current waveform per Figure 2 and derate per Figure 3
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
300
Pulse width (tp) is defined
as that point where the
peak current decays to
t
r
250
200
150
100
50
ALUMINA SUBSTRATE
50 % of I
tr ≤ 10 µs
Peak Value - I
RSM
RSM
100
50
I
RSM
2
Half Value -
FR-5 BOARD
tp
0
0
0
100
T, Temperature( °C)
175
1
3
2
t, Time (ms)
4
0
25
50
75
125
150
18656
18655
Figure 1. Steady State Power Derating Curve
Figure 2. Pulse Waveform
www.vishay.com
2
Document Number 85808
Rev. 1.4, 08-Jul-04
MMBZ...VDA and C Series
VISHAY
Vishay Semiconductors
100
75
50
25
0
0
75
200
100 125
175
25
50
-
150
T
A
Ambient Temperature (°C)
18657
Figure 3. Pulse Derating Curve
Package Dimensions in mm (Inches)
0.175 (.007)
0.098 (.005)
0.1 (.004) max.
2.6 (.102)
2.35 (.092)
0.4 (.016)
0.4 (.016)
ISO Method E
3.1 (.122)
Mounting Pad Layout
2.8 (.110)
0.4 (.016)
0.52 (0.020)
3
0.9 (0.035)
2.0 (0.079)
1
2
0.95 (.037)
0.95 (.037)
0.95 (0.037)
0.95 (0.037)
17418
Document Number 85808
Rev. 1.4, 08-Jul-04
www.vishay.com
3
MMBZ...VDA and C Series
Vishay Semiconductors
VISHAY
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
www.vishay.com
4
Document Number 85808
Rev. 1.4, 08-Jul-04
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